Read-write circuits

Industry

CPC
G11C11/416

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/416Read-write circuits

Industries

Patents Grantslast 30 patents

Information Patent Grant
Resistive memory cell and associated cell array structure
- Patent number 12,069,873
- Issue date Aug 20, 2024
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-stage bit line pre-charge
- Patent number 11,749,321
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Cheng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system capable of performing a bit partitioning process and...
- Patent number 11,600,319
- Issue date Mar 7, 2023
- National Cheng Kung University
- Lih-Yih Chiou
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with multiple power supply nodes and switch controller...
- Patent number 11,514,973
- Issue date Nov 29, 2022
- Samsung Electronics Co., Ltd.
- Woojin Rim
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-rewritable code comparators with memristors and serial resistors
- Patent number 11,151,289
- Issue date Oct 19, 2021
- TetraMem Inc.
- Ning Ge
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-stage bit line pre-charge
- Patent number 11,100,964
- Issue date Aug 24, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Cheng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,756,091
- Issue date Aug 25, 2020
- Samsung Electronics Co., Ltd.
- Ji Ung Pak
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit
- Patent number 10,496,569
- Issue date Dec 3, 2019
- Kabushiki Kaisha Toshiba
- Kosuke Tatsumura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,283,509
- Issue date May 7, 2019
- Samsung Electronics Co., Ltd.
- Ji Ung Pak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Write assist thyristor-based SRAM circuits and methods of operation
- Patent number 10,283,185
- Issue date May 7, 2019
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for reducing pre-charge voltage for static random-access...
- Patent number 10,002,661
- Issue date Jun 19, 2018
- International Business Machines Corporation
- Alexander Fritsch
- G11 - INFORMATION STORAGE
Information Patent Grant
Complementary bipolar SRAM
- Patent number 9,929,161
- Issue date Mar 27, 2018
- International Business Machines Corporation
- Tak H. Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of reading six-transistor cross-coupled thyristor-based SRA...
- Patent number 9,741,413
- Issue date Aug 22, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Complementary bipolar SRAM
- Patent number 9,653,149
- Issue date May 16, 2017
- International Business Machines Corporation
- Tak H. Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Six-transistor SRAM semiconductor structures and methods of fabrica...
- Patent number 9,564,198
- Issue date Feb 7, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Six-transistor thyristor SRAM circuits and methods of operation
- Patent number 9,496,020
- Issue date Nov 15, 2016
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-transistor thyristor SRAM circuit and methods of operation
- Patent number 9,460,771
- Issue date Oct 4, 2016
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-coupled thyristor SRAM circuits and methods of operation
- Patent number 9,449,669
- Issue date Sep 20, 2016
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-storing and self-restoring non-volatile static random access m...
- Patent number 9,437,298
- Issue date Sep 6, 2016
- Intel Corporation
- Shigeki Tomishima
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM cell and cell layout method
- Patent number 9,305,633
- Issue date Apr 5, 2016
- STMicroelectronics International N.V.
- Anuj Grover
- G11 - INFORMATION STORAGE
Information Patent Grant
Universal test structures based SRAM on-chip parametric test module...
- Patent number 9,208,899
- Issue date Dec 8, 2015
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for high speed dynamic memory
- Patent number 8,009,459
- Issue date Aug 30, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsu Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Polycrystalline thin film bipolar transistors
- Patent number 8,004,013
- Issue date Aug 23, 2011
- Sandisk 3D LLC
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 7,929,333
- Issue date Apr 19, 2011
- Kabushiki Kaisha Toshiba
- Atsushi Kawasumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Read/write/restore circuit for memory arrays
- Patent number 5,465,230
- Issue date Nov 7, 1995
- International Business Machines Corporation
- Frank A. Montegari
- G11 - INFORMATION STORAGE
Information Patent Grant
Microcalorimeters
- Patent number 5,312,587
- Issue date May 17, 1994
- Microscal Limited
- Charles Templer
- G11 - INFORMATION STORAGE
Information Patent Grant
Balanced bit line pull up circuitry for random access memories
- Patent number 5,297,089
- Issue date Mar 22, 1994
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier circuit implemented by bipolar transistor and impro...
- Patent number 5,245,571
- Issue date Sep 14, 1993
- NEC Corporation
- Hiroyuki Takahashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Static semiconductor memory device using bipolar transistor
- Patent number 5,216,630
- Issue date Jun 1, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Yasunobu Nakase
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit line discharge and sense circuit
- Patent number 5,200,924
- Issue date Apr 6, 1993
- Synergy Semiconductor Corporation
- Thomas S. W. Wong
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Channel Circuit with Trained Neural Network Noise Mixture Estimator
- Publication number 20240170056
- Publication date May 23, 2024
- Western Digital Technologies, Inc.
- Minghai Qin
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Stage Bit Line Pre-Charge
- Publication number 20240029769
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Cheng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY CELL AND ASSOCIATED CELL ARRAY STRUCTURE
- Publication number 20220199622
- Publication date Jun 23, 2022
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Stage Bit Line Pre-Charge
- Publication number 20210383847
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Cheng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
NON-REWRITABLE CODE COMPARATORS WITH MEMRISTORS AND SERIAL RESISTORS
- Publication number 20200110909
- Publication date Apr 9, 2020
- Tetramem Inc.
- Ning Ge
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190189619
- Publication date Jun 20, 2019
- Samsung Electronics Co., Ltd.
- JI UNG PAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20190087365
- Publication date Mar 21, 2019
- KABUSHIKI KAISHA TOSHIBA
- Kosuke TATSUMURA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20180166449
- Publication date Jun 14, 2018
- Samsung Electronics Co., Ltd.
- JI UNG PAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN STRUCTURE FOR REDUCING PRE-CHARGE VOLTAGE FOR STATIC RANDOM-...
- Publication number 20170243633
- Publication date Aug 24, 2017
- International Business Machines Corporation
- Alexander Fritsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPLEMENTARY BIPOLAR SRAM
- Publication number 20170236824
- Publication date Aug 17, 2017
- International Business Machines Corporation
- Tak H. Ning
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLEMENTARY BIPOLAR SRAM
- Publication number 20160343427
- Publication date Nov 24, 2016
- International Business Machines Corporation
- Tak H. Ning
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY
- Publication number 20150098268
- Publication date Apr 9, 2015
- RENESAS ELECTRONICS CORPORATION
- Makoto YABUUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL HAVING BUILT-IN WRITE ASSIST
- Publication number 20150043270
- Publication date Feb 12, 2015
- LSI Corporation
- Sahilpreet Singh
- G11 - INFORMATION STORAGE
Information Patent Application
UNIVERSAL TEST STRUCTURES BASED SRAM ON-CHIP PARAMETRIC TEST MODULE...
- Publication number 20110273946
- Publication date Nov 10, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Circuit and Method for a High Speed Memory Cell
- Publication number 20100165704
- Publication date Jul 1, 2010
- Cheng-Hsu Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20090168500
- Publication date Jul 2, 2009
- Kabushiki Kaisha Toshiba
- Atsushi KAWASUMI
- G11 - INFORMATION STORAGE
Information Patent Application
POLYCRYSTALLINE THIN FILM BIPOLAR TRANSISTORS
- Publication number 20080308903
- Publication date Dec 18, 2008
- SanDisk 3D LLC
- Christopher J. Petti
- G11 - INFORMATION STORAGE

Read-write circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistive memory cell and associated cell array structure

Multi-stage bit line pre-charge

Memory system capable of performing a bit partitioning process and...

Memory array with multiple power supply nodes and switch controller...

Non-rewritable code comparators with memristors and serial resistors

Multi-stage bit line pre-charge

Semiconductor device and method for fabricating the same

Semiconductor integrated circuit

Semiconductor device and method for fabricating the same

Write assist thyristor-based SRAM circuits and methods of operation

Structure for reducing pre-charge voltage for static random-access...

Complementary bipolar SRAM

Methods of reading six-transistor cross-coupled thyristor-based SRA...

Complementary bipolar SRAM

Six-transistor SRAM semiconductor structures and methods of fabrica...

Six-transistor thyristor SRAM circuits and methods of operation

Two-transistor thyristor SRAM circuit and methods of operation

Cross-coupled thyristor SRAM circuits and methods of operation

Self-storing and self-restoring non-volatile static random access m...

SRAM cell and cell layout method

Universal test structures based SRAM on-chip parametric test module...

Circuit for high speed dynamic memory

Polycrystalline thin film bipolar transistors

Semiconductor memory device

Read/write/restore circuit for memory arrays

Microcalorimeters

Balanced bit line pull up circuitry for random access memories

Sense amplifier circuit implemented by bipolar transistor and impro...

Static semiconductor memory device using bipolar transistor

Bit line discharge and sense circuit

Patents Applicationslast 30 patents

Channel Circuit with Trained Neural Network Noise Mixture Estimator

Multi-Stage Bit Line Pre-Charge

RESISTIVE MEMORY CELL AND ASSOCIATED CELL ARRAY STRUCTURE

Multi-Stage Bit Line Pre-Charge

NON-REWRITABLE CODE COMPARATORS WITH MEMRISTORS AND SERIAL RESISTORS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

DESIGN STRUCTURE FOR REDUCING PRE-CHARGE VOLTAGE FOR STATIC RANDOM-...

COMPLEMENTARY BIPOLAR SRAM

COMPLEMENTARY BIPOLAR SRAM

SEMICONDUCTOR MEMORY

MEMORY CELL HAVING BUILT-IN WRITE ASSIST

UNIVERSAL TEST STRUCTURES BASED SRAM ON-CHIP PARAMETRIC TEST MODULE...

Circuit and Method for a High Speed Memory Cell

SEMICONDUCTOR MEMORY DEVICE

POLYCRYSTALLINE THIN FILM BIPOLAR TRANSISTORS