Reading and writing aspects of erasable programmable read-only memories

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2216/00Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups

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G11C2216/12Reading and writing aspects of erasable programmable read-only memories

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Patents Grantslast 30 patents

Information Patent Grant
Read sample offset bit determination in a memory sub-system
- Patent number 11,733,928
- Issue date Aug 22, 2023
- Micron Technology, Inc.
- Michael Sheperek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Read sample offset bit determination using most probably decoder lo...
- Patent number 11,288,009
- Issue date Mar 29, 2022
- Micron Technology, Inc.
- Michael Sheperek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-bit-per-cell three-dimensional resistive random-access memory...
- Patent number 11,170,863
- Issue date Nov 9, 2021
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Double-biased three-dimensional one-time-programmable memory
- Patent number 10,706,945
- Issue date Jul 7, 2020
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Solid state storage device and read table management method thereof
- Patent number 10,629,269
- Issue date Apr 21, 2020
- SOLID STATE STORAGE TECHNOLOGY CORPORATION
- Shih-Jia Zeng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional one-time-programmable memory with a dummy word line
- Patent number 10,580,507
- Issue date Mar 3, 2020
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional one-time-programmable memory comprising dummy bit...
- Patent number 10,573,399
- Issue date Feb 25, 2020
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit-per-cell three-dimensional one-time-programmable memory
- Patent number 10,102,917
- Issue date Oct 16, 2018
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
READ SAMPLE OFFSET BIT DETERMINATION IN A MEMORY SUB-SYSTEM
- Publication number 20220214837
- Publication date Jul 7, 2022
- Micron Technology, Inc.
- Michael Sheperek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Multi-Bit-Per-Cell Three-Dimensional Resistive Random-Access Memory...
- Publication number 20200350030
- Publication date Nov 5, 2020
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
SOLID STATE STORAGE DEVICE AND READ TABLE MANAGEMENT METHOD THEREOF
- Publication number 20200035307
- Publication date Jan 30, 2020
- LITE-ON ELECTRONICS (GUANGZHOU) LIMITED
- Shih-Jia ZENG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Three-Dimensional One-Time-Programmable Memory With A Dummy Word Line
- Publication number 20180366206
- Publication date Dec 20, 2018
- CHENGDU HAICUN IP TECHNOLOGY LLC
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Double-Biased Three-Dimensional One-Time-Programmable Memory
- Publication number 20180366207
- Publication date Dec 20, 2018
- ChengDu SanWei IP Technology LLC
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional One-Time-Programmable Memory Comprising Dummy Bit...
- Publication number 20180342307
- Publication date Nov 29, 2018
- HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Bit-Per-Cell Three-Dimensional One-Time-Programmable Memory
- Publication number 20170301405
- Publication date Oct 19, 2017
- CHENGDU HAICUN IP TECHNOLOGY LLC
- Guobiao ZHANG
- G11 - INFORMATION STORAGE

Reading and writing aspects of erasable programmable read-only memories

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Read sample offset bit determination in a memory sub-system

Read sample offset bit determination using most probably decoder lo...

Multi-bit-per-cell three-dimensional resistive random-access memory...

Double-biased three-dimensional one-time-programmable memory

Solid state storage device and read table management method thereof

Three-dimensional one-time-programmable memory with a dummy word line

Three-dimensional one-time-programmable memory comprising dummy bit...

Multi-bit-per-cell three-dimensional one-time-programmable memory

Patents Applicationslast 30 patents

READ SAMPLE OFFSET BIT DETERMINATION IN A MEMORY SUB-SYSTEM

Multi-Bit-Per-Cell Three-Dimensional Resistive Random-Access Memory...

SOLID STATE STORAGE DEVICE AND READ TABLE MANAGEMENT METHOD THEREOF

Three-Dimensional One-Time-Programmable Memory With A Dummy Word Line

Double-Biased Three-Dimensional One-Time-Programmable Memory

Three-Dimensional One-Time-Programmable Memory Comprising Dummy Bit...

Multi-Bit-Per-Cell Three-Dimensional One-Time-Programmable Memory