Reading or sensing circuits or methods

Industry

CPC
G11C13/004

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

Current Industry

G11C13/004Reading or sensing circuits or methods

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Series of parallel sensing operations for multi-level cells
- Patent number 12,272,420
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Qing Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional structure of memories for in-memory computing
- Patent number 12,272,398
- Issue date Apr 8, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Théophile Dubreuil
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming operation method of resistive random access memory
- Patent number 12,272,397
- Issue date Apr 8, 2025
- United Microelectronics Corp.
- Yi Ting Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential programming of two-terminal resistive switching memory...
- Patent number 12,272,399
- Issue date Apr 8, 2025
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier architecture for a non-volatile memory storing code...
- Patent number 12,260,910
- Issue date Mar 25, 2025
- STMicroelectronics S.r.l.
- Fabio Enrico Carlo Disegni
- G11 - INFORMATION STORAGE
Information Patent Grant
Encoding additional states in a three-dimensional crosspoint memory...
- Patent number 12,249,372
- Issue date Mar 11, 2025
- Intel Corporation
- Rouhollah Mousavi Iraei
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjusting operation voltage of cross point memory according to agin...
- Patent number 12,249,369
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hengyuan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell with double active volume
- Patent number 12,250,889
- Issue date Mar 11, 2025
- International Business Machines Corporation
- Timothy Mathew Philip
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and techniques for accessing multiple memory cells concurre...
- Patent number 12,249,370
- Issue date Mar 11, 2025
- Micron Technology, Inc.
- Federico Pio
- G11 - INFORMATION STORAGE
Information Patent Grant
OTS-based dynamic storage structure and operation method thereof
- Patent number 12,249,373
- Issue date Mar 11, 2025
- Huazhong University of Science & Technology
- Hao Tong
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory
- Patent number 12,243,588
- Issue date Mar 4, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Storing bits with cells in a memory device
- Patent number 12,237,020
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including memory cell including variable resistance e...
- Patent number 12,230,322
- Issue date Feb 18, 2025
- Kioxia Corporation
- Ryousuke Takizawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal metastable mixed-conductor memristive devices
- Patent number 12,229,652
- Issue date Feb 18, 2025
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Switching device having bi-directional drive characteristics and me...
- Patent number 12,232,430
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Signal processing apparatus and signal processing method
- Patent number 12,226,216
- Issue date Feb 18, 2025
- Tsinghua University
- Huaqiang Wu
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Device with neural network
- Patent number 12,230,321
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jung-Hoon Chun
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,232,336
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for efficient matrix multiplication
- Patent number 12,223,009
- Issue date Feb 11, 2025
- Rain Neuromorphics Inc.
- Jack David Kendall
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor storage device
- Patent number 12,219,889
- Issue date Feb 4, 2025
- Kioxia Corporation
- Masahiro Takahashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory and operating method thereof
- Patent number 12,217,795
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Fan Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Sequence alignment with memory arrays
- Patent number 12,217,796
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Justin Eno
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Grant
Three dimensional memory and methods of forming the same
- Patent number 12,219,765
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamically boosting read voltage for a memory device
- Patent number 12,205,641
- Issue date Jan 21, 2025
- Micron Technology, Inc.
- Nicola Ciocchini
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device
- Patent number 12,205,644
- Issue date Jan 21, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Overwrite read methods for resistance switching memory devices
- Patent number 12,205,640
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Michael K. Grobis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device
- Patent number 12,205,642
- Issue date Jan 21, 2025
- Kioxia Corporation
- Kunifumi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having physical unclonable function and memory system...
- Patent number 12,205,643
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Jooyong Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance non-volatile memory with a gate insulator film...
- Patent number 12,207,480
- Issue date Jan 21, 2025
- Kioxia Corporation
- Tomoki Chiba
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method for reading memory circuit
- Patent number 12,198,759
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hengyuan Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT INCLUDING A PHYSICALLY UNCLONABLE FUNCTION DEVIC...
- Publication number 20250111876
- Publication date Apr 3, 2025
- STMicroelectronics S.r.l.
- Antonino Conte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE AND METHOD OF CONTROLLING STORAGE DEVICE
- Publication number 20250095733
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Dandan ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
COMPUTING APPARATUS AND ROBUSTNESS PROCESSING METHOD THEREFOR
- Publication number 20250095728
- Publication date Mar 20, 2025
- TSINGHUA UNIVERSITY
- Bin GAO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND INITIALIZING METHOD THEREOF
- Publication number 20250095732
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- KYUDONG PARK
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE
- Publication number 20250095729
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Kazuya MATSUZAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD FOR READING MEMORY CIRCUIT
- Publication number 20250095730
- Publication date Mar 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- G11 - INFORMATION STORAGE
Information Patent Application
CHALCOGENIDE-BASED MEMORY MATERIAL, AND MEMORY DEVICE AND ELECTRONI...
- Publication number 20250098558
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Hajun SUNG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL ARRAY UNIT
- Publication number 20250087267
- Publication date Mar 13, 2025
- Sony Semiconductor Solutions Corporation
- NOBUKAZU MURATA
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE, CORRESPONDING METHOD AND SYSTEM
- Publication number 20250069656
- Publication date Feb 27, 2025
- STMicroelectronics International N.V.
- Maurizio Francesco Perroni
- G11 - INFORMATION STORAGE
Information Patent Application
Repair Method in Phase Change Storage Apparatus, Phase Change Stora...
- Publication number 20250069657
- Publication date Feb 27, 2025
- Huawei Technologies Co., Ltd
- Sa Tu
- G11 - INFORMATION STORAGE
Information Patent Application
BIT-SERIAL INPUT SCHEMES FOR CROSSBAR CIRCUITS
- Publication number 20250069655
- Publication date Feb 27, 2025
- TetraMem Inc.
- Hengfang Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CONTROL CIRCUIT CAPABLE OF GENERATING AN UPDATED REFERENCE C...
- Publication number 20250061944
- Publication date Feb 20, 2025
- UNITED MICROELECTRONICS CORP.
- Chung-Hao Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Assembly for carrying out a discrete Fourier transform
- Publication number 20250054542
- Publication date Feb 13, 2025
- SEMRON GMBH
- Kai-Uwe DEMASIUS
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CELL READ OPERATION TECHNIQUES
- Publication number 20250054543
- Publication date Feb 13, 2025
- Micron Technology, Inc.
- Riccardo Muzzetto
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MEMORY MINI-ARRAY THEREOF WITH I...
- Publication number 20250046372
- Publication date Feb 6, 2025
- UNITED MICROELECTRONICS CORP.
- Shu-Hung Yu
- G11 - INFORMATION STORAGE
Information Patent Application
TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRI...
- Publication number 20250046373
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
Storage Chip, Storage Apparatus, and Electronic Device
- Publication number 20250048653
- Publication date Feb 6, 2025
- Huawei Technologies Co., Ltd
- Xiang Li
- G11 - INFORMATION STORAGE
Information Patent Application
PROCESS FOR COINTEGRATION OF TWO PHASE CHANGE MEMORY (PCM) ARRAYS H...
- Publication number 20250048940
- Publication date Feb 6, 2025
- STMicroelectronics International N.V.
- Andrea REDAELLI
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT OVONIC FRUSTUM MEMORY DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20250040150
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Lei WAN
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20250037766
- Publication date Jan 30, 2025
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACT...
- Publication number 20250029655
- Publication date Jan 23, 2025
- National Tsing Hua University
- Ya-Chin KING
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE CHANGE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APPAR...
- Publication number 20250029654
- Publication date Jan 23, 2025
- Kabushiki Kaisha Toshiba
- Koichi MIZUSHIMA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING VARIABLE SERIAL RESISTIVE ELEMENT HAVING VO...
- Publication number 20250029656
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Yumin KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE FOR IN-MEMORY COMPUTING
- Publication number 20250022508
- Publication date Jan 16, 2025
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FORWARD LOOKING ALGORITHM FOR VERTICAL INTEGRATED CROSS-POINT ARRAY...
- Publication number 20250022507
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
- Publication number 20250024760
- Publication date Jan 16, 2025
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES
- Publication number 20250014641
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250006260
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- ISAO NARITAKE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CIRCUIT
- Publication number 20250006238
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- DAISHI ISOGAI
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTANCE RANGE OPTIMIZATION
- Publication number 20250005431
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Corey Liam Lammie
- G06 - COMPUTING CALCULATING COUNTING

Reading or sensing circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Series of parallel sensing operations for multi-level cells

Three-dimensional structure of memories for in-memory computing

Forming operation method of resistive random access memory

Differential programming of two-terminal resistive switching memory...

Sense amplifier architecture for a non-volatile memory storing code...

Encoding additional states in a three-dimensional crosspoint memory...

Adjusting operation voltage of cross point memory according to agin...

Phase change memory cell with double active volume

Systems and techniques for accessing multiple memory cells concurre...

OTS-based dynamic storage structure and operation method thereof

Semiconductor memory

Storing bits with cells in a memory device

Memory device including memory cell including variable resistance e...

Two-terminal metastable mixed-conductor memristive devices

Switching device having bi-directional drive characteristics and me...

Signal processing apparatus and signal processing method

Device with neural network

Threshold voltage-modulated memory device using variable-capacitanc...

Systems and methods for efficient matrix multiplication

Semiconductor storage device

Memory and operating method thereof

Sequence alignment with memory arrays

Three dimensional memory and methods of forming the same

Dynamically boosting read voltage for a memory device

Nonvolatile memory device

Overwrite read methods for resistance switching memory devices

Memory device

Memory device having physical unclonable function and memory system...

Variable resistance non-volatile memory with a gate insulator film...

Memory circuit and method for reading memory circuit

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT INCLUDING A PHYSICALLY UNCLONABLE FUNCTION DEVIC...

STORAGE DEVICE AND METHOD OF CONTROLLING STORAGE DEVICE

COMPUTING APPARATUS AND ROBUSTNESS PROCESSING METHOD THEREFOR

MEMORY DEVICE AND INITIALIZING METHOD THEREOF

STORAGE DEVICE

MEMORY CIRCUIT AND METHOD FOR READING MEMORY CIRCUIT

CHALCOGENIDE-BASED MEMORY MATERIAL, AND MEMORY DEVICE AND ELECTRONI...

MEMORY CELL ARRAY UNIT

NON-VOLATILE MEMORY DEVICE, CORRESPONDING METHOD AND SYSTEM

Repair Method in Phase Change Storage Apparatus, Phase Change Stora...

BIT-SERIAL INPUT SCHEMES FOR CROSSBAR CIRCUITS

MEMORY CONTROL CIRCUIT CAPABLE OF GENERATING AN UPDATED REFERENCE C...

Assembly for carrying out a discrete Fourier transform

MEMORY CELL READ OPERATION TECHNIQUES

RESISTIVE RANDOM ACCESS MEMORY AND MEMORY MINI-ARRAY THEREOF WITH I...

TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRI...

Storage Chip, Storage Apparatus, and Electronic Device

PROCESS FOR COINTEGRATION OF TWO PHASE CHANGE MEMORY (PCM) ARRAYS H...

CROSS-POINT OVONIC FRUSTUM MEMORY DEVICE AND METHOD OF MAKING THE SAME

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACT...

RESISTANCE CHANGE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APPAR...

MEMORY DEVICE INCLUDING VARIABLE SERIAL RESISTIVE ELEMENT HAVING VO...

MEMORY DEVICE FOR IN-MEMORY COMPUTING

FORWARD LOOKING ALGORITHM FOR VERTICAL INTEGRATED CROSS-POINT ARRAY...

FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES

MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES

SEMICONDUCTOR STORAGE DEVICE

SEMICONDUCTOR CIRCUIT

CONDUCTANCE RANGE OPTIMIZATION