Reading or sensing circuits or methods

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/2273Reading or sensing circuits or methods

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Negative capacitance for ferroelectric capacitive memory cell
- Patent number 12,266,393
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
MFMFET, MFMFET array, and the operating method thereof
- Patent number 12,260,891
- Issue date Mar 25, 2025
- NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Tuo-Hung Hou
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with access device and memory capacitor structures
- Patent number 12,254,914
- Issue date Mar 18, 2025
- FERROELECTRIC MEMORY GMBH
- Johannes Ocker
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit structure and method for forming and operating t...
- Patent number 12,254,915
- Issue date Mar 18, 2025
- Macronix International Co., Ltd.
- Dai-Ying Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and its operating method
- Patent number 12,250,823
- Issue date Mar 11, 2025
- Industry-University Cooperation Foundation Hanyang University Erica Campus
- Younghyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory
- Patent number 12,243,588
- Issue date Mar 4, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Quasi-volatile memory with reference bit line structure
- Patent number 12,245,429
- Issue date Mar 4, 2025
- SUNRISE MEMORY CORPORATION
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell biasing techniques during a read operation
- Patent number 12,237,002
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Andrea Locatelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual-precision analog memory cell and array
- Patent number 12,230,309
- Issue date Feb 18, 2025
- Hefei Reliance Memory Limited
- Zhichao Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 12,223,994
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for reading and writing memory cells in three-dimensional FeRAM
- Patent number 12,211,537
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Qiang Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlled heating of a memory device
- Patent number 12,210,774
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Peter Mayer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Capacitive synaptic component and method for controlling same
- Patent number 12,205,637
- Issue date Jan 21, 2025
- SEMRON GMBH
- Kai-Uwe Demasius
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Security management of ferroelectric memory device
- Patent number 12,197,631
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Danilo Caraccio
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Threshold voltage-programmable field effect transistor-based memory...
- Patent number 12,190,930
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, memory controller, and methods thereof
- Patent number 12,190,932
- Issue date Jan 7, 2025
- FERROELECTRIC MEMORY GMBH
- Tony Schenk
- G11 - INFORMATION STORAGE
Information Patent Grant
Write broadcast operations associated with a memory device
- Patent number 12,189,988
- Issue date Jan 7, 2025
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Read operations based on a dynamic reference
- Patent number 12,183,380
- Issue date Dec 31, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit partitioning for a memory device
- Patent number 12,182,432
- Issue date Dec 31, 2024
- Micron Technology, Inc.
- Andrea Martinelli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Self-adjusting reference current for a memory
- Patent number 12,183,381
- Issue date Dec 31, 2024
- FERROELECTRIC MEMORY GMBH
- Georgi Kuzmanov
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,166,123
- Issue date Dec 10, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Storing memory array operational information in non-volatile subarrays
- Patent number 12,158,826
- Issue date Dec 3, 2024
- Micron Technology, Inc.
- Christopher John Kawamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory string array of thin-film ferroelectric tr...
- Patent number 12,160,996
- Issue date Dec 3, 2024
- SUNRISE MEMORY CORPORATION
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Grant
Drive strength calibration for multi-level signaling
- Patent number 12,148,502
- Issue date Nov 19, 2024
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Grant
PMOS threshold compensation sense amplifier for FeRAM devices
- Patent number 12,142,311
- Issue date Nov 12, 2024
- Micron Technology, Inc.
- Tong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory accessing with auto-precharge
- Patent number 12,136,448
- Issue date Nov 5, 2024
- Micron Technology, Inc.
- Shivam Swami
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with multiplexed select lines and two transistor memor...
- Patent number 12,131,766
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with content addressable memory units
- Patent number 12,131,780
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
System on chip (SOC) with processor and integrated ferroelectric me...
- Patent number 12,125,513
- Issue date Oct 22, 2024
- Seagate Technology LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Grant
Neural network operation device
- Patent number 12,124,945
- Issue date Oct 22, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...
- Publication number 20250113493
- Publication date Apr 3, 2025
- Sunrise Memory Corporation
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
Efficient Memory Operation Using a Destructive Read Memory Array
- Publication number 20250110655
- Publication date Apr 3, 2025
- ADVANCED MICRO DEVICES, INC.
- Jagadish B. Kotra
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095692
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Takafumi MASUDA
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY AND DATA READING METHOD AND DATA WRITING METHO...
- Publication number 20250095727
- Publication date Mar 20, 2025
- CXMT CORPORATION
- Xiang LIU
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING AND OPERATING T...
- Publication number 20250078893
- Publication date Mar 6, 2025
- Macronix International Co., Ltd.
- Dai-Ying LEE
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY, CONTROL APPARATUS THEREOF, METHOD FOR INCREAS...
- Publication number 20250069634
- Publication date Feb 27, 2025
- Huawei Technologies Co., Ltd
- Wanliang TAN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES INCLUDING FERROELECTRIC CELL CAPACITORS AND OPERATIN...
- Publication number 20250054532
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Hwayeong Lee
- G11 - INFORMATION STORAGE
Information Patent Application
IMPRINT RECOVERY FOR MEMORY CELLS
- Publication number 20250054560
- Publication date Feb 13, 2025
- Micron Technology, Inc.
- Jonathan D. Harms
- G11 - INFORMATION STORAGE
Information Patent Application
PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES
- Publication number 20250054531
- Publication date Feb 13, 2025
- Micron Technology, Inc.
- Tong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING
- Publication number 20250046347
- Publication date Feb 6, 2025
- Lodestar Licensing Group LLC
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE READING CIRCUIT, MEMORY, AND ELECTRONIC DEVICE
- Publication number 20250037749
- Publication date Jan 30, 2025
- Huawei Technologies Co., Ltd
- Shihui YIN
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM ON CHIP (SOC) WITH PROCESSOR AND INTEGRATED FERROELECTRIC ME...
- Publication number 20250029646
- Publication date Jan 23, 2025
- SEAGATE TECHNOLOGY LLC
- Jon D. TRANTHAM
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...
- Publication number 20250022500
- Publication date Jan 16, 2025
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY REFERENCE GENERATION
- Publication number 20250014625
- Publication date Jan 9, 2025
- Wuxi Smart Memories Technologies Co., Ltd.
- Feng PAN
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY CELL ACCESS
- Publication number 20250014623
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY WRITING METHOD AND ASSOCIATED DEVICES
- Publication number 20250014626
- Publication date Jan 9, 2025
- Wuxi Smart Memories Technologies Co., Ltd.
- Feng PAN
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY LOCAL SENSE AMPLIFICATION
- Publication number 20250014622
- Publication date Jan 9, 2025
- Wuxi Smart MemoriesTechnologies Co., Ltd.
- Feng PAN
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH MULTI...
- Publication number 20250014621
- Publication date Jan 9, 2025
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY REFERENCE GENERATION
- Publication number 20250014624
- Publication date Jan 9, 2025
- Wuxi Smart MemoriesTechnologies Co., Ltd.
- Feng PAN
- G11 - INFORMATION STORAGE
Information Patent Application
DEPLETION MODE FERROELECTRIC TRANSISTORS
- Publication number 20250006239
- Publication date Jan 2, 2025
- Iu-Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Application
DETECTING LOCATION WITHIN A NETWORK
- Publication number 20240430642
- Publication date Dec 26, 2024
- Ivani, LLC
- John Wootton
- G01 - MEASURING TESTING
Information Patent Application
APPARATUSES, SYSTEMS, AND METHODS FOR CONFIGURABLE MEMORY
- Publication number 20240428839
- Publication date Dec 26, 2024
- Micron Technology, Inc.
- Angelo VISCONTI
- G11 - INFORMATION STORAGE
Information Patent Application
UNBALANCED PROGRAMMED DATA STATES IN MEMORY
- Publication number 20240412768
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Christophe Laurent
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240407174
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE
Information Patent Application
INDUCTIVE ENERGY HARVESTING AND SIGNAL DEVELOPMENT FOR A MEMORY DEVICE
- Publication number 20240404567
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G11 - INFORMATION STORAGE
Information Patent Application
IMPRINT RECOVERY MANAGEMENT FOR MEMORY SYSTEMS
- Publication number 20240403158
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Sukneet Singh Basuta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS
- Publication number 20240395302
- Publication date Nov 28, 2024
- Micron Technology, Inc.
- Albert Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY WITH COMPENSATED WORD LINE ACCESS DELAY
- Publication number 20240395303
- Publication date Nov 28, 2024
- Micron Technology, Inc.
- Si Hong Kim
- G11 - INFORMATION STORAGE
Information Patent Application
ADJUSTING A SENSING VOLTAGE IN MEMORY
- Publication number 20240386933
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH CONTENT ADDRESSABLE MEMORY UNITS
- Publication number 20240386957
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. Chiang
- G11 - INFORMATION STORAGE

Reading or sensing circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Negative capacitance for ferroelectric capacitive memory cell

MFMFET, MFMFET array, and the operating method thereof

Memory cell with access device and memory capacitor structures

Integrated circuit structure and method for forming and operating t...

Non-volatile memory device and its operating method

Semiconductor memory

Quasi-volatile memory with reference bit line structure

Memory cell biasing techniques during a read operation

Dual-precision analog memory cell and array

Memory arrays, ferroelectric transistors, and methods of reading an...

Method for reading and writing memory cells in three-dimensional FeRAM

Controlled heating of a memory device

Capacitive synaptic component and method for controlling same

Security management of ferroelectric memory device

Threshold voltage-programmable field effect transistor-based memory...

Memory device, memory controller, and methods thereof

Write broadcast operations associated with a memory device

Read operations based on a dynamic reference

Circuit partitioning for a memory device

Self-adjusting reference current for a memory

Semiconductor device

Storing memory array operational information in non-volatile subarrays

Three-dimensional memory string array of thin-film ferroelectric tr...

Drive strength calibration for multi-level signaling

PMOS threshold compensation sense amplifier for FeRAM devices

Memory accessing with auto-precharge

Memory array with multiplexed select lines and two transistor memor...

Memory device with content addressable memory units

System on chip (SOC) with processor and integrated ferroelectric me...

Neural network operation device

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...

Efficient Memory Operation Using a Destructive Read Memory Array

SEMICONDUCTOR MEMORY DEVICE

FERROELECTRIC MEMORY AND DATA READING METHOD AND DATA WRITING METHO...

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING AND OPERATING T...

FERROELECTRIC MEMORY, CONTROL APPARATUS THEREOF, METHOD FOR INCREAS...

MEMORY DEVICES INCLUDING FERROELECTRIC CELL CAPACITORS AND OPERATIN...

IMPRINT RECOVERY FOR MEMORY CELLS

PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES

DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING

BIT LINE READING CIRCUIT, MEMORY, AND ELECTRONIC DEVICE

SYSTEM ON CHIP (SOC) WITH PROCESSOR AND INTEGRATED FERROELECTRIC ME...

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...

FERROELECTRIC MEMORY REFERENCE GENERATION

FERROELECTRIC MEMORY CELL ACCESS

FERROELECTRIC MEMORY WRITING METHOD AND ASSOCIATED DEVICES

FERROELECTRIC MEMORY LOCAL SENSE AMPLIFICATION

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH MULTI...

FERROELECTRIC MEMORY REFERENCE GENERATION

DEPLETION MODE FERROELECTRIC TRANSISTORS

DETECTING LOCATION WITHIN A NETWORK

APPARATUSES, SYSTEMS, AND METHODS FOR CONFIGURABLE MEMORY

UNBALANCED PROGRAMMED DATA STATES IN MEMORY

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...

INDUCTIVE ENERGY HARVESTING AND SIGNAL DEVELOPMENT FOR A MEMORY DEVICE

IMPRINT RECOVERY MANAGEMENT FOR MEMORY SYSTEMS

FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS

MEMORY ARRAY WITH COMPENSATED WORD LINE ACCESS DELAY

ADJUSTING A SENSING VOLTAGE IN MEMORY

MEMORY DEVICE WITH CONTENT ADDRESSABLE MEMORY UNITS