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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/26526Recoil-implantation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Conformal transfer doping method for Fin-like field effect transistor
- Patent number 12,249,640
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with improved strain properties
- Patent number 12,237,414
- Issue date Feb 25, 2025
- Taiwan Semicondcutor Manufacturing Co., Ltd.
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device architectures with tensile and compressive strained substrates
- Patent number 12,218,201
- Issue date Feb 4, 2025
- National University of Singapore
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,148
- Issue date Jan 7, 2025
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method for semiconductor device
- Patent number 12,009,268
- Issue date Jun 11, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal transfer doping method for fin-like field effect transistor
- Patent number 11,862,713
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 11,854,782
- Issue date Dec 26, 2023
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,749,559
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method for semiconductor device
- Patent number 11,742,249
- Issue date Aug 29, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,735,424
- Issue date Aug 22, 2023
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,527,432
- Issue date Dec 13, 2022
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of reliefs on the surface of a substrate
- Patent number 11,495,462
- Issue date Nov 8, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Lamia Nouri
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Conformal transfer doping method for fin-like field effect transistor
- Patent number 11,476,352
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method for semiconductor device
- Patent number 11,450,734
- Issue date Sep 20, 2022
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 11,373,869
- Issue date Jun 28, 2022
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,342,186
- Issue date May 24, 2022
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal transfer doping method for fin-like field effect transistor
- Patent number 10,868,151
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 10,832,940
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different gate widths for upper and lower transistors in a stacked...
- Patent number 10,811,322
- Issue date Oct 20, 2020
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabricating method thereof
- Patent number 10,790,392
- Issue date Sep 29, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of reliefs on the surface of a substrate
- Patent number 10,741,398
- Issue date Aug 11, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Lamia Nouri
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method of reducing an impurity concentration in a semiconductor body
- Patent number 10,607,839
- Issue date Mar 31, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 10,510,543
- Issue date Dec 17, 2019
- Fuji Electric Co., Ltd.
- Shinichiro Matsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Accumulation enhanced insulated gate bipolar transistor (AEGT) and...
- Patent number 10,388,726
- Issue date Aug 20, 2019
- Semiconductor Components Industries, LLC
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,319,856
- Issue date Jun 11, 2019
- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal transfer doping method for fin-like field effect transistor
- Patent number 10,276,691
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal-semiconductor junction and manu...
- Patent number 9,911,610
- Issue date Mar 6, 2018
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating semiconductor device
- Patent number 9,871,138
- Issue date Jan 16, 2018
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film-forming composition and ion implantation method
- Patent number 9,214,345
- Issue date Dec 15, 2015
- Nissan Chemical Industries, Ltd.
- Tomoya Ohashi
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Methods of forming doped regions in semiconductor substrates
- Patent number 9,093,367
- Issue date Jul 28, 2015
- Micron Technology, Inc.
- Lequn Jennifer Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES
- Publication number 20250081561
- Publication date Mar 6, 2025
- SOITEC
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD
- Publication number 20240421008
- Publication date Dec 19, 2024
- KIOXIA Corporation
- Shunsuke OKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ENHANCED CARRIER MOBILITY
- Publication number 20240379850
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20240096629
- Publication date Mar 21, 2024
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
- Publication number 20240097010
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN FEATURES WITH IMPROVED STRAIN PROPERTIES
- Publication number 20230387301
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20230369137
- Publication date Nov 16, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230360915
- Publication date Nov 9, 2023
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER
- Publication number 20230063731
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20230040096
- Publication date Feb 9, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION
- Publication number 20220406600
- Publication date Dec 22, 2022
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES
- Publication number 20220399441
- Publication date Dec 15, 2022
- SOITEC
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal Transfer Doping Method for Fin-Like Field Effect Transistor
- Publication number 20220376090
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Features With Improved Strain Properties
- Publication number 20220359752
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20220328313
- Publication date Oct 13, 2022
- Fuji Electric Co., Ltd.
- Yosuke SAKURAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20220319852
- Publication date Oct 6, 2022
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices With Enhanced Carrier Mobility
- Publication number 20220310840
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220277959
- Publication date Sep 1, 2022
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20220216056
- Publication date Jul 7, 2022
- Fuji Electric Co., Ltd.
- Misaki UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20220216055
- Publication date Jul 7, 2022
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220084825
- Publication date Mar 17, 2022
- Mitsubishi Electric Corporation
- Tetsuo TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal Transfer Doping Method for Fin-Like Field Effect Transistor
- Publication number 20210134985
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210082702
- Publication date Mar 18, 2021
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER
- Publication number 20210074577
- Publication date Mar 11, 2021
- GLOBALFOUNDRIES INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20210050215
- Publication date Feb 18, 2021
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20200395215
- Publication date Dec 17, 2020
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF RELIEFS ON THE SURFACE OF A SUBSTRATE
- Publication number 20200335343
- Publication date Oct 22, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Lamia NOURI
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
DIFFERENT GATE WIDTHS FOR UPPER AND LOWER TRANSISTORS IN A STACKED...
- Publication number 20200328120
- Publication date Oct 15, 2020
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal Transfer Doping Method For Fin-Like Field Effect Transistor
- Publication number 20190252527
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190228973
- Publication date Jul 25, 2019
- Toyota Jidosha Kabushiki Kaisha
- Keisuke KIMURA
- H01 - BASIC ELECTRIC ELEMENTS

Recoil-implantation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Conformal transfer doping method for Fin-like field effect transistor

Source/drain features with improved strain properties

Device architectures with tensile and compressive strained substrates

Semiconductor device and manufacturing method thereof

Semiconductor device and fabrication method for semiconductor device

Conformal transfer doping method for fin-like field effect transistor

Semiconductor device and fabrication method

Bulk substrates with a self-aligned buried polycrystalline layer

Semiconductor device and fabrication method for semiconductor device

Semiconductor device and manufacturing method thereof

Bulk substrates with a self-aligned buried polycrystalline layer

Formation of reliefs on the surface of a substrate

Conformal transfer doping method for fin-like field effect transistor

Semiconductor device and fabrication method for semiconductor device

Semiconductor device and fabrication method

Semiconductor device and manufacturing method thereof

Conformal transfer doping method for fin-like field effect transistor

Bulk substrates with a self-aligned buried polycrystalline layer

Different gate widths for upper and lower transistors in a stacked...

Semiconductor structure and fabricating method thereof

Formation of reliefs on the surface of a substrate

Method of reducing an impurity concentration in a semiconductor body

Semiconductor device and method of manufacturing thereof

Accumulation enhanced insulated gate bipolar transistor (AEGT) and...

Semiconductor device

Conformal transfer doping method for fin-like field effect transistor

Semiconductor device having a metal-semiconductor junction and manu...

Semiconductor device and method of fabricating semiconductor device

Film-forming composition and ion implantation method

Methods of forming doped regions in semiconductor substrates

Patents Applicationslast 30 patents

DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES

SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD

SEMICONDUCTOR DEVICES WITH ENHANCED CARRIER MOBILITY

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR

SOURCE/DRAIN FEATURES WITH IMPROVED STRAIN PROPERTIES

SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER

SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION

DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES

Conformal Transfer Doping Method for Fin-Like Field Effect Transistor

Source/Drain Features With Improved Strain Properties

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Semiconductor Devices With Enhanced Carrier Mobility

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Conformal Transfer Doping Method for Fin-Like Field Effect Transistor

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE

FORMATION OF RELIEFS ON THE SURFACE OF A SUBSTRATE

DIFFERENT GATE WIDTHS FOR UPPER AND LOWER TRANSISTORS IN A STACKED...

Conformal Transfer Doping Method For Fin-Like Field Effect Transistor

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME