Resistive cell, memory material aspects

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

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G11C2213/30Resistive cell, memory material aspects

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Patents Grantslast 30 patents

Information Patent Grant
Program current controller and sense circuit for cross-point memory...
- Patent number 12,002,510
- Issue date Jun 4, 2024
- Micron Technology, Inc.
- Andrea Ghetti
- G11 - INFORMATION STORAGE
Information Patent Grant
Neural network memory
- Patent number 11,922,056
- Issue date Mar 5, 2024
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory management utilzing buffer reset commands
- Patent number 11,853,606
- Issue date Dec 26, 2023
- Micron Technology, Inc.
- Marco Sforzin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thin films printed with chalcogenide glass inks
- Patent number 11,845,870
- Issue date Dec 19, 2023
- Boise State University
- Maria Mitkova
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-level self-selecting memory device
- Patent number 11,769,551
- Issue date Sep 26, 2023
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques to access a self-selecting memory device
- Patent number 11,763,886
- Issue date Sep 19, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Neural network memory
- Patent number 11,487,464
- Issue date Nov 1, 2022
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Material implication operations in memory
- Patent number 11,475,951
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure and method for low programming voltag...
- Patent number 11,430,513
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Soon-Cheon Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for sensing memory cells
- Patent number 11,217,306
- Issue date Jan 4, 2022
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory operation method and circuit
- Patent number 11,217,304
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Sheng Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory management utilizing buffer reset commands
- Patent number 11,157,202
- Issue date Oct 26, 2021
- Micron Technology, Inc.
- Marco Sforzin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Techniques to access a self-selecting memory device
- Patent number 11,152,065
- Issue date Oct 19, 2021
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level cell (MLC) cross-point memory
- Patent number 11,107,523
- Issue date Aug 31, 2021
- Intel Corporation
- Sanjay Rangan
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level self-selecting memory device
- Patent number 11,094,377
- Issue date Aug 17, 2021
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for programming neural memory unit using cell conditioning
- Patent number 11,062,767
- Issue date Jul 13, 2021
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor system including a phase changeable memory device
- Patent number 11,049,558
- Issue date Jun 29, 2021
- SK hynix Inc.
- Yun Seok Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory operation method and circuit
- Patent number 10,971,223
- Issue date Apr 6, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Sheng Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Material implication operations in memory
- Patent number 10,910,052
- Issue date Feb 2, 2021
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for sensing memory cells
- Patent number 10,861,542
- Issue date Dec 8, 2020
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Grant
High speed thin film two terminal resistive memory
- Patent number 10,777,267
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques to access a self-selecting memory device
- Patent number 10,665,298
- Issue date May 26, 2020
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor system including a phase changeable memory device
- Patent number 10,607,697
- Issue date Mar 31, 2020
- SK hynix Inc.
- Yun Seok Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
High speed thin film two terminal resistive memory
- Patent number 10,586,591
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Weight storage using memory device
- Patent number 10,559,353
- Issue date Feb 11, 2020
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-level self-selecting memory device
- Patent number 10,546,632
- Issue date Jan 28, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with programmable non-volatile resistive switch...
- Patent number 10,447,275
- Issue date Oct 15, 2019
- Intel Corporation
- Andy L. Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Apparatuses and methods for sensing memory cells
- Patent number 10,424,372
- Issue date Sep 24, 2019
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Grant
Material implication operations in memory
- Patent number 10,424,376
- Issue date Sep 24, 2019
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming structure and method for integrated circuit memory
- Patent number 10,395,733
- Issue date Aug 27, 2019
- Macronix International Co., Ltd.
- Shang-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE INCLUDING P...
- Publication number 20240371440
- Publication date Nov 7, 2024
- Revol-Ver Inc.
- Sung Lae CHO
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...
- Publication number 20240321355
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Andrea Ghetti
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING SWITCHING MATERIAL AND PHASE CHANGE MATERIAL
- Publication number 20240046986
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Minwoo CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...
- Publication number 20230245701
- Publication date Aug 3, 2023
- Micron Technology, Inc.
- Andrea Ghetti
- G11 - INFORMATION STORAGE
Information Patent Application
NEURAL NETWORK MEMORY
- Publication number 20230058092
- Publication date Feb 23, 2023
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNIQUES TO ACCESS A SELF-SELECTING MEMORY DEVICE
- Publication number 20220115068
- Publication date Apr 14, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL SELF-SELECTING MEMORY DEVICE
- Publication number 20220036946
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY MANAGEMENT UTILZING BUFFER RESET COMMANDS
- Publication number 20220019384
- Publication date Jan 20, 2022
- Micron Technology, Inc.
- Marco Sforzin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY OPERATION METHOD AND CIRCUIT
- Publication number 20210210137
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng CHEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
APPARATUSES AND METHODS FOR SENSING MEMORY CELLS
- Publication number 20210090648
- Publication date Mar 25, 2021
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Application
NEURAL NETWORK MEMORY
- Publication number 20210004174
- Publication date Jan 7, 2021
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNIQUES TO ACCESS A SELF-SELECTING MEMORY DEVICE
- Publication number 20200327940
- Publication date Oct 15, 2020
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY MANAGEMENT UTILZING BUFFER RESET COMMANDS
- Publication number 20200210103
- Publication date Jul 2, 2020
- Micron Technology, Inc.
- Marco Sforzin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR SYSTEM INCLUDING A PHASE CHANGEABLE MEMORY DEVICE
- Publication number 20200185029
- Publication date Jun 11, 2020
- SK HYNIX INC.
- Yun Seok HONG
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL SELF-SELECTING MEMORY DEVICE
- Publication number 20200118621
- Publication date Apr 16, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY OPERATION METHOD AND CIRCUIT
- Publication number 20200105342
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng CHEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WEIGHT STORAGE USING MEMORY DEVICE
- Publication number 20190378566
- Publication date Dec 12, 2019
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
APPARATUSES AND METHODS FOR SENSING MEMORY CELLS
- Publication number 20190333578
- Publication date Oct 31, 2019
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY
- Publication number 20190214082
- Publication date Jul 11, 2019
- International Business Machines Corporation
- NING Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY
- Publication number 20190214080
- Publication date Jul 11, 2019
- International Business Machines Corporation
- NING Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY
- Publication number 20190214081
- Publication date Jul 11, 2019
- International Business Machines Corporation
- NING Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STRUCTURE AND METHOD FOR INTEGRATED CIRCUIT MEMORY
- Publication number 20190198103
- Publication date Jun 27, 2019
- Macronix International Co., Ltd.
- Shang-Chi YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL IMPLICATION OPERATIONS IN MEMORY
- Publication number 20190198105
- Publication date Jun 27, 2019
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL SELF-SELECTING MEMORY DEVICE
- Publication number 20190189203
- Publication date Jun 20, 2019
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH PROGRAMMABLE NON-VOLATILE RESISTIVE SWITCH...
- Publication number 20190020344
- Publication date Jan 17, 2019
- Intel Corporation
- Andy L. Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEM TO DUPLICATE NEUROMORPHIC CORE FUNCTIONALITY
- Publication number 20170364793
- Publication date Dec 21, 2017
- International Business Machines Corporation
- SangBum Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20140299830
- Publication date Oct 9, 2014
- Beom-Yong KIM
- G11 - INFORMATION STORAGE

Resistive cell, memory material aspects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Program current controller and sense circuit for cross-point memory...

Neural network memory

Memory management utilzing buffer reset commands

Thin films printed with chalcogenide glass inks

Multi-level self-selecting memory device

Techniques to access a self-selecting memory device

Neural network memory

Material implication operations in memory

Non-volatile memory structure and method for low programming voltag...

Apparatuses and methods for sensing memory cells

Memory operation method and circuit

Memory management utilizing buffer reset commands

Techniques to access a self-selecting memory device

Multi-level cell (MLC) cross-point memory

Multi-level self-selecting memory device

Techniques for programming neural memory unit using cell conditioning

Semiconductor system including a phase changeable memory device

Phase change memory operation method and circuit

Material implication operations in memory

Apparatuses and methods for sensing memory cells

High speed thin film two terminal resistive memory

Techniques to access a self-selecting memory device

Semiconductor system including a phase changeable memory device

High speed thin film two terminal resistive memory

Weight storage using memory device

Multi-level self-selecting memory device

Integrated circuits with programmable non-volatile resistive switch...

Apparatuses and methods for sensing memory cells

Material implication operations in memory

Forming structure and method for integrated circuit memory

Patents Applicationslast 30 patents

CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE INCLUDING P...

PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...

MEMORY DEVICE INCLUDING SWITCHING MATERIAL AND PHASE CHANGE MATERIAL

PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...

NEURAL NETWORK MEMORY

TECHNIQUES TO ACCESS A SELF-SELECTING MEMORY DEVICE

MULTI-LEVEL SELF-SELECTING MEMORY DEVICE

MEMORY MANAGEMENT UTILZING BUFFER RESET COMMANDS

MEMORY OPERATION METHOD AND CIRCUIT

APPARATUSES AND METHODS FOR SENSING MEMORY CELLS

NEURAL NETWORK MEMORY

TECHNIQUES TO ACCESS A SELF-SELECTING MEMORY DEVICE

MEMORY MANAGEMENT UTILZING BUFFER RESET COMMANDS

SEMICONDUCTOR SYSTEM INCLUDING A PHASE CHANGEABLE MEMORY DEVICE

MULTI-LEVEL SELF-SELECTING MEMORY DEVICE

PHASE CHANGE MEMORY OPERATION METHOD AND CIRCUIT

WEIGHT STORAGE USING MEMORY DEVICE

APPARATUSES AND METHODS FOR SENSING MEMORY CELLS

HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY

HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY

HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY

FORMING STRUCTURE AND METHOD FOR INTEGRATED CIRCUIT MEMORY

MATERIAL IMPLICATION OPERATIONS IN MEMORY

MULTI-LEVEL SELF-SELECTING MEMORY DEVICE

INTEGRATED CIRCUITS WITH PROGRAMMABLE NON-VOLATILE RESISTIVE SWITCH...

SYSTEM TO DUPLICATE NEUROMORPHIC CORE FUNCTIONALITY

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME