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H01L27/11213

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/11213ROM only

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Electronic chip memory
- Patent number 11,164,647
- Issue date Nov 2, 2021
- STMicroelectronics S.A.
- Stephane Denorme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a memory device having multiple metal interco...
- Patent number 11,145,599
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 10,937,811
- Issue date Mar 2, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D SRAM/ROM with several superimposed layers and reconfigurable by...
- Patent number 10,923,191
- Issue date Feb 16, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- David Coriat
- G11 - INFORMATION STORAGE
Information Patent Grant
Bi-sided pattern processor
- Patent number 10,714,172
- Issue date Jul 14, 2020
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for high speed ROM cells
- Patent number 10,658,010
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array structure having multiple bit lines
- Patent number 10,522,462
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 10,325,927
- Issue date Jun 18, 2019
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact three-dimensional memory with semi-conductive address line...
- Patent number 10,304,495
- Issue date May 28, 2019
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact three-dimensional memory with an above-substrate decoding s...
- Patent number 10,304,553
- Issue date May 28, 2019
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having features to prevent reverse engineering
- Patent number 10,037,950
- Issue date Jul 31, 2018
- VERISITI, LLC
- William Eli Thacker
- G05 - CONTROLLING REGULATING
Information Patent Grant
Method to program bitcells of a ROM array
- Patent number 9,966,150
- Issue date May 8, 2018
- Synopsys, Inc.
- Anil Singh Rawat
- G11 - INFORMATION STORAGE
Information Patent Grant
FinFETs suitable for use in a high density SRAM cell
- Patent number 9,825,055
- Issue date Nov 21, 2017
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ROM segmented bitline circuit
- Patent number 9,704,874
- Issue date Jul 11, 2017
- eASIC Corporation
- Ban P. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
Mask read-only memory array, memory device, and fabrication method...
- Patent number 9,559,104
- Issue date Jan 31, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for high speed ROM cells
- Patent number 9,312,265
- Issue date Apr 12, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with a read-only EEPROM-type structure
- Patent number 8,759,898
- Issue date Jun 24, 2014
- STMicroelectronics S.A.
- Pascal Fornara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse engineering resistant read only memory
- Patent number 8,350,308
- Issue date Jan 8, 2013
- NXP B.V.
- Aurelie Humbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating memory including diode
- Patent number 7,704,825
- Issue date Apr 27, 2010
- Sanyo Electric Co., LTD
- Kouichi Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory having reduced memory cell size
- Patent number 7,476,945
- Issue date Jan 13, 2009
- Sanyo Electric Co., LTD
- Kouichi Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon-on-insulator (SOI) read only memory (ROM) array and method...
- Patent number 7,358,120
- Issue date Apr 15, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 7,348,640
- Issue date Mar 25, 2008
- Sanyo Electric Company, Ltd.
- Kouichi Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon-on-insulator (SOI) Read Only Memory (ROM) array and method...
- Patent number 7,227,233
- Issue date Jun 5, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,091,518
- Issue date Aug 15, 2006
- Fujitsu Limited
- Tetsuya Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density memory array
- Patent number 7,042,030
- Issue date May 9, 2006
- Texas Instruments Incorporated
- Suresh Balasuramanian
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance-changing function body, memory element, manufacturing me...
- Patent number 7,030,456
- Issue date Apr 18, 2006
- Sharp Kabushiki Kaisha
- Nobutoshi Arai
- G11 - INFORMATION STORAGE
Information Patent Grant
TRANSFER METHOD, METHOD OF MANUFACTURING THIN FILM DEVICES, METHOD...
- Patent number 6,887,650
- Issue date May 3, 2005
- Seiko Epson Corporation
- Tatsuya Shimoda
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
ROM embedded DRAM with dielectric removal/short
- Patent number 6,852,611
- Issue date Feb 8, 2005
- Micron Technology, Inc.
- Phillip G. Wald
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM embedded DRAM with dielectric removal/short
- Patent number 6,665,207
- Issue date Dec 16, 2003
- Micron Technology, Inc.
- Phillip G. Wald
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with bit lines having reduced cross-talk
- Patent number 6,646,312
- Issue date Nov 11, 2003
- Oki Electric Industry Co., Ltd.
- Hidekazu Kikuchi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20220310537
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20210391356
- Publication date Dec 16, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CHIP MEMORY
- Publication number 20200202966
- Publication date Jun 25, 2020
- STMicroelectronics S.A.
- Stephane Denorme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY STRUCTURE AND METHOD OF FABRICATING THEREOF
- Publication number 20200126905
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM/ROM MEMORY RECONFIGURABLE BY SUBSTRATE POLARIZATION
- Publication number 20200035302
- Publication date Jan 30, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- David CORIAT
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus for High Speed ROM Cells
- Publication number 20190333919
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20190267404
- Publication date Aug 29, 2019
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bi-Sided Pattern Processor
- Publication number 20190180815
- Publication date Jun 13, 2019
- HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY STRUCTURE AND METHOD OF FABRICATING THEREOF
- Publication number 20180337121
- Publication date Nov 22, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROM SEGMENTED BITLINE CIRCUIT
- Publication number 20170170186
- Publication date Jun 15, 2017
- eASIC Corporation
- Ban P. WONG
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Device Having Features to Prevent Reverse Engineering
- Publication number 20170092599
- Publication date Mar 30, 2017
- Verisiti, Inc.
- William Eli Thacker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO PROGRAM BITCELLS OF A ROM ARRAY
- Publication number 20170025185
- Publication date Jan 26, 2017
- Synopsys, Inc.
- Anil Singh Rawat
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MASK READ-ONLY MEMORY ARRAY, MEMORY DEVICE, AND FABRICATION METHOD...
- Publication number 20160293614
- Publication date Oct 6, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHAO ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for High Speed ROM Cells
- Publication number 20160049412
- Publication date Feb 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
FINFETS SUITABLE FOR USE IN A HIGH DENSITY SRAM CELL
- Publication number 20150325597
- Publication date Nov 12, 2015
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Small-Grain Three-Dimensional Memory
- Publication number 20150214277
- Publication date Jul 30, 2015
- HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
- Guobiao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20140299936
- Publication date Oct 9, 2014
- STMicroelectronics, Inc.
- John H. ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR HIGH SPEED ROM CELLS
- Publication number 20140231921
- Publication date Aug 21, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus for High Speed ROM Cells
- Publication number 20130258749
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH A READ-ONLY EEPROM-TYPE STRUCTURE
- Publication number 20110108902
- Publication date May 12, 2011
- STMicroelectronics (Rousset) SAS
- Pascal FORNARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE ENGINEERING RESISTANT READ ONLY MEMORY
- Publication number 20110006352
- Publication date Jan 13, 2011
- NXP B.V.
- Aurelie Humbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory and method of fabricating the same
- Publication number 20080206946
- Publication date Aug 28, 2008
- Sanyo Electric Co., Ltd.
- Kouichi Yamada
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON-ON-INSULATOR (SOI) READ ONLY MEMORY (ROM) ARRAY AND METHOD...
- Publication number 20070128813
- Publication date Jun 7, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) READ ONLY MEMORY (ROM) ARRAY AND METHOD...
- Publication number 20070057323
- Publication date Mar 15, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060049400
- Publication date Mar 9, 2006
- FUJITSU LIMITED
- Tetsuya Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory
- Publication number 20050269646
- Publication date Dec 8, 2005
- SANYO ELECTRIC CO., LTD.
- Kouichi Yamada
- G11 - INFORMATION STORAGE
Information Patent Application
Memory and method of fabricating the same
- Publication number 20050205943
- Publication date Sep 22, 2005
- SANYO ELECTRIC CO., LTD.
- Kouichi Yamada
- G11 - INFORMATION STORAGE
Information Patent Application
High density memory array
- Publication number 20050111250
- Publication date May 26, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Suresh Balasuramanian
- G11 - INFORMATION STORAGE
Information Patent Application
Transfer method, method of manufacturing thin film devices, method...
- Publication number 20050106839
- Publication date May 19, 2005
- SEIKO EPSON CORPORATION
- Tatsuya Shimoda
- G02 - OPTICS
Information Patent Application
Resistance-changing function body, memory element, manufacturing me...
- Publication number 20040183647
- Publication date Sep 23, 2004
- Nobutoshi Arai
- G11 - INFORMATION STORAGE

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic chip memory

Method of fabricating a memory device having multiple metal interco...

Integrated circuit devices and fabrication techniques

3D SRAM/ROM with several superimposed layers and reconfigurable by...

Bi-sided pattern processor

Apparatus for high speed ROM cells

Memory array structure having multiple bit lines

Integrated circuit devices and fabrication techniques

Compact three-dimensional memory with semi-conductive address line...

Compact three-dimensional memory with an above-substrate decoding s...

Semiconductor device having features to prevent reverse engineering

Method to program bitcells of a ROM array

FinFETs suitable for use in a high density SRAM cell

ROM segmented bitline circuit

Mask read-only memory array, memory device, and fabrication method...

Apparatus for high speed ROM cells

Memory with a read-only EEPROM-type structure

Reverse engineering resistant read only memory

Method of fabricating memory including diode

Memory having reduced memory cell size

Silicon-on-insulator (SOI) read only memory (ROM) array and method...

Memory device

Silicon-on-insulator (SOI) Read Only Memory (ROM) array and method...

Semiconductor device

High density memory array

Resistance-changing function body, memory element, manufacturing me...

TRANSFER METHOD, METHOD OF MANUFACTURING THIN FILM DEVICES, METHOD...

ROM embedded DRAM with dielectric removal/short

ROM embedded DRAM with dielectric removal/short

Semiconductor memory device with bit lines having reduced cross-talk

Patents Applicationslast 30 patents

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

ELECTRONIC CHIP MEMORY

MEMORY ARRAY STRUCTURE AND METHOD OF FABRICATING THEREOF

SRAM/ROM MEMORY RECONFIGURABLE BY SUBSTRATE POLARIZATION

Apparatus for High Speed ROM Cells

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

Bi-Sided Pattern Processor

MEMORY ARRAY STRUCTURE AND METHOD OF FABRICATING THEREOF

ROM SEGMENTED BITLINE CIRCUIT

Semiconductor Device Having Features to Prevent Reverse Engineering

METHOD TO PROGRAM BITCELLS OF A ROM ARRAY

MASK READ-ONLY MEMORY ARRAY, MEMORY DEVICE, AND FABRICATION METHOD...

Apparatus for High Speed ROM Cells

FINFETS SUITABLE FOR USE IN A HIGH DENSITY SRAM CELL

Small-Grain Three-Dimensional Memory

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

APPARATUS FOR HIGH SPEED ROM CELLS

Apparatus for High Speed ROM Cells

MEMORY WITH A READ-ONLY EEPROM-TYPE STRUCTURE

REVERSE ENGINEERING RESISTANT READ ONLY MEMORY

Memory and method of fabricating the same

SILICON-ON-INSULATOR (SOI) READ ONLY MEMORY (ROM) ARRAY AND METHOD...

SILICON-ON-INSULATOR (SOI) READ ONLY MEMORY (ROM) ARRAY AND METHOD...

Semiconductor device

Memory

Memory and method of fabricating the same

High density memory array

Transfer method, method of manufacturing thin film devices, method...

Resistance-changing function body, memory element, manufacturing me...