RRAM elements whose operation depends upon chemical change

Industry

CPC
G11C13/0009

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

Current Industry

G11C13/0009RRAM elements whose operation depends upon chemical change

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory device and operation method thereof for performing multiply-...
- Patent number 12,040,015
- Issue date Jul 16, 2024
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Techniques for a multi-step current profile for a phase change memory
- Patent number 11,810,617
- Issue date Nov 7, 2023
- Intel Corporation
- Hemant P. Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 11,742,019
- Issue date Aug 29, 2023
- Kioxia Corporation
- Daisaburo Takashima
- G11 - INFORMATION STORAGE
Information Patent Grant
Bayesian network in memory
- Patent number 11,681,906
- Issue date Jun 20, 2023
- Micron Technology, Inc.
- Dmitry Vengertsev
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive switching memory device based on multi-inputs
- Patent number 11,437,570
- Issue date Sep 6, 2022
- Yonsei University, University—Industry Foundation (UIF)
- Ki Tae Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically actuated switch
- Patent number 11,283,012
- Issue date Mar 22, 2022
- Hewlett Packard Enterprise Development LP
- R. Stanley Williams
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for a multi-step current profile for a phase change memory
- Patent number 11,276,462
- Issue date Mar 15, 2022
- Intel Corporation
- Hemant P. Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrochemical device of variable electrical conductance
- Patent number 11,250,315
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Valeria Bragaglia
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Supercapacitor with electrolyte
- Patent number 11,170,945
- Issue date Nov 9, 2021
- PARIS SCIENCES ET LETTRES—QUARTIER LATIN
- Brigitte Leridon
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,063,214
- Issue date Jul 13, 2021
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Optoelectronic memristor devices including one or more solid electr...
- Patent number 10,910,559
- Issue date Feb 2, 2021
- Massachusetts Institute of Technology
- Thomas Defferriere
- G11 - INFORMATION STORAGE
Information Patent Grant
Paired intercalation cells for drift migration
- Patent number 10,885,979
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Jianshi Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing a memory cell having a porous dielectric and u...
- Patent number 10,833,264
- Issue date Nov 10, 2020
- Forschungszentrum Juelich GmbH
- Alexey Yakushenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells, memory systems, and memory programming methods
- Patent number 10,783,961
- Issue date Sep 22, 2020
- Micron Technology, Inc.
- Wataru Otsuka
- G11 - INFORMATION STORAGE
Information Patent Grant
High speed thin film two terminal resistive memory
- Patent number 10,777,267
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,680,171
- Issue date Jun 9, 2020
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High speed thin film two terminal resistive memory
- Patent number 10,586,591
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device
- Patent number 10,553,791
- Issue date Feb 4, 2020
- Kabushiki Kaisha Toshiba
- Yoshiaki Asao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ionic floating-gate memory device
- Patent number 10,497,866
- Issue date Dec 3, 2019
- National Technology & Engineering Solutions of Sandia, LLC
- Elliot James Fuller
- G11 - INFORMATION STORAGE
Information Patent Grant
TCAM device and operating method thereof
- Patent number 10,482,962
- Issue date Nov 19, 2019
- Samsung Electronics Co., Ltd.
- Cheol Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide memory resistor including semiconductor nanoparticles
- Patent number 10,475,994
- Issue date Nov 12, 2019
- UCL Business plc
- Anthony Joseph Kenyon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled resistive devices
- Patent number 10,460,804
- Issue date Oct 29, 2019
- Massachusetts Institute of Technology
- Uwe Bauer
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Resistance and gate control in decoder circuits for read and write...
- Patent number 10,438,657
- Issue date Oct 8, 2019
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling structural phase transitions and properties of two-dime...
- Patent number 10,403,753
- Issue date Sep 3, 2019
- The Government of the United States of America, as represented by the Secreta...
- Berend T. Jonker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells, memory systems, and memory programming methods
- Patent number 10,395,731
- Issue date Aug 27, 2019
- Micron Technology, Inc.
- Wataru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier modulated cell structures with intrinsic vertical bit line...
- Patent number 10,388,870
- Issue date Aug 20, 2019
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically actuated switch
- Patent number 10,374,155
- Issue date Aug 6, 2019
- Hewlett Packard Enterprise Development LP
- R. Stanley Williams
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Single-readout high-density memristor crossbar
- Patent number 10,340,001
- Issue date Jul 2, 2019
- King Abdullah University of Science and Technology
- Mohammed Affan Zidan
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory cell programmed by metal alloy formation and metho...
- Patent number 10,297,312
- Issue date May 21, 2019
- SanDisk Technologies LLC
- Takuya Futase
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND OPERATION METHOD THEREOF FOR PERFORMING MULTIPLY-...
- Publication number 20230420043
- Publication date Dec 28, 2023
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220284953
- Publication date Sep 8, 2022
- KIOXIA Corporation
- Daisaburo TAKASHIMA
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY
- Publication number 20220165335
- Publication date May 26, 2022
- Intel Corporation
- Hemant P. RAO
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY
- Publication number 20210391005
- Publication date Dec 16, 2021
- Intel Corporation
- Hemant P. RAO
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20210193917
- Publication date Jun 24, 2021
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTROCHEMICAL DEVICE OF VARIABLE ELECTRICAL CONDUCTANCE
- Publication number 20210125043
- Publication date Apr 29, 2021
- International Business Machines Corporation
- Valeria Bragaglia
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PAIRED INTERCALATION CELLS FOR DRIFT MIGRATION
- Publication number 20200327941
- Publication date Oct 15, 2020
- International Business Machines Corporation
- Jianshi Tang
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20200259079
- Publication date Aug 13, 2020
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
OPTOELECTRONIC MEMRISTOR DEVICES
- Publication number 20200028074
- Publication date Jan 23, 2020
- Thomas DEFFERRIERE
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically Actuated Switch
- Publication number 20190363251
- Publication date Nov 28, 2019
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- R. Stanley Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Memory Systems, and Memory Programming Methods
- Publication number 20190311767
- Publication date Oct 10, 2019
- Micron Technology, Inc.
- Wataru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE AND GATE CONTROL IN DECODER CIRCUITS FOR READ AND WRITE...
- Publication number 20190267082
- Publication date Aug 29, 2019
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY
- Publication number 20190214082
- Publication date Jul 11, 2019
- International Business Machines Corporation
- NING Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY
- Publication number 20190214080
- Publication date Jul 11, 2019
- International Business Machines Corporation
- NING Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY
- Publication number 20190214081
- Publication date Jul 11, 2019
- International Business Machines Corporation
- NING Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20190173006
- Publication date Jun 6, 2019
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY CELL PROGRAMMED BY METAL ALLOY FORMATION AND METHO...
- Publication number 20190172532
- Publication date Jun 6, 2019
- SanDisk Technologies LLC
- Takuya FUTASE
- G11 - INFORMATION STORAGE
Information Patent Application
BARRIER MODULATED CELL STRUCTURES WITH INTRINSIC VERTICAL BIT LINE...
- Publication number 20190123276
- Publication date Apr 25, 2019
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PRODUCING AN ACCUMULATOR AND USE OF THE ACCUMULATOR
- Publication number 20190058116
- Publication date Feb 21, 2019
- FORSCHUNGSZENTRUM JUELICH GMBH
- Alexey Yakushenko
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20180254412
- Publication date Sep 6, 2018
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki ASAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20180130946
- Publication date May 10, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VOLTAGE-CONTROLLED RESISTIVE DEVICES
- Publication number 20180108412
- Publication date Apr 19, 2018
- Massachusetts Institute of Technology
- Uwe Bauer
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically Actuated Switch
- Publication number 20170317277
- Publication date Nov 2, 2017
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- R. Stanley Williams
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE-CONTROLLED RESISTIVE DEVICES
- Publication number 20170249990
- Publication date Aug 31, 2017
- Massachusetts Institute of Technology
- Uwe Bauer
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE SWITCHING USING LAYERED DEVICE STRUCTURE
- Publication number 20170179195
- Publication date Jun 22, 2017
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND...
- Publication number 20160268340
- Publication date Sep 15, 2016
- SanDisk Technologies LLC
- Seiji Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE AND STORAGE UNIT
- Publication number 20150318471
- Publication date Nov 5, 2015
- SONY CORPORATION
- Kazuhiro OHBA
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20150261437
- Publication date Sep 17, 2015
- SK HYNIX INC.
- Seung-Hwan LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOW READ CURRENT ARCHITECTURE FOR MEMORY
- Publication number 20140334222
- Publication date Nov 13, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Bruce Lynn Bateman
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE MEMORY RESISTOR INCLUDING SEMICONDUCTOR NANOPARTICLES
- Publication number 20140291602
- Publication date Oct 2, 2014
- UCL BUSINESS PLC
- Anthony Joseph Kenyon
- G11 - INFORMATION STORAGE

RRAM elements whose operation depends upon chemical change

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device and operation method thereof for performing multiply-...

Techniques for a multi-step current profile for a phase change memory

Nonvolatile semiconductor memory device

Bayesian network in memory

Two-terminal reversibly switchable memory device

Resistive switching memory device based on multi-inputs

Electrically actuated switch

Techniques for a multi-step current profile for a phase change memory

Electrochemical device of variable electrical conductance

Supercapacitor with electrolyte

Two-terminal reversibly switchable memory device

Optoelectronic memristor devices including one or more solid electr...

Paired intercalation cells for drift migration

Method for producing a memory cell having a porous dielectric and u...

Memory cells, memory systems, and memory programming methods

High speed thin film two terminal resistive memory

Two-terminal reversibly switchable memory device

High speed thin film two terminal resistive memory

Semiconductor storage device

Ionic floating-gate memory device

TCAM device and operating method thereof

Oxide memory resistor including semiconductor nanoparticles

Voltage-controlled resistive devices

Resistance and gate control in decoder circuits for read and write...

Controlling structural phase transitions and properties of two-dime...

Memory cells, memory systems, and memory programming methods

Barrier modulated cell structures with intrinsic vertical bit line...

Electrically actuated switch

Single-readout high-density memristor crossbar

Resistive memory cell programmed by metal alloy formation and metho...

Patents Applicationslast 30 patents

MEMORY DEVICE AND OPERATION METHOD THEREOF FOR PERFORMING MULTIPLY-...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY

TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

ELECTROCHEMICAL DEVICE OF VARIABLE ELECTRICAL CONDUCTANCE

PAIRED INTERCALATION CELLS FOR DRIFT MIGRATION

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

OPTOELECTRONIC MEMRISTOR DEVICES

Electrically Actuated Switch

Memory Cells, Memory Systems, and Memory Programming Methods

RESISTANCE AND GATE CONTROL IN DECODER CIRCUITS FOR READ AND WRITE...

HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY

HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY

HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

RESISTIVE MEMORY CELL PROGRAMMED BY METAL ALLOY FORMATION AND METHO...

BARRIER MODULATED CELL STRUCTURES WITH INTRINSIC VERTICAL BIT LINE...

METHOD FOR PRODUCING AN ACCUMULATOR AND USE OF THE ACCUMULATOR

SEMICONDUCTOR STORAGE DEVICE

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

VOLTAGE-CONTROLLED RESISTIVE DEVICES

Electrically Actuated Switch

VOLTAGE-CONTROLLED RESISTIVE DEVICES

DEVICE SWITCHING USING LAYERED DEVICE STRUCTURE

METHOD OF OPERATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND...

STORAGE DEVICE AND STORAGE UNIT

ELECTRONIC DEVICE

LOW READ CURRENT ARCHITECTURE FOR MEMORY

OXIDE MEMORY RESISTOR INCLUDING SEMICONDUCTOR NANOPARTICLES