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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L43/00Devices using galvano-magnetic or similar magnetic effects Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

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H01L43/10Selection of materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,706,999
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,694,714
- Issue date Jul 4, 2023
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack with seed region and method of manufacturing...
- Patent number 11,690,229
- Issue date Jun 27, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic field controlled transistor
- Patent number 11,683,938
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Cezar Bogdan Zota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 11,683,991
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetrical pinned magnets, and method o...
- Patent number 11,678,585
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mingyuan Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing magnetic tunnel junction and magnetic tunne...
- Patent number 11,678,583
- Issue date Jun 13, 2023
- HITACHI HIGH-TECH CORPORATION
- Yu Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a crystalline metal-phosphide hetero-layer b...
- Patent number 11,674,237
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Yannick Baumgartner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,672,182
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device having a ferromagnetic element
- Patent number 11,672,183
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Sang Hwan Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 11,672,181
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huang-Wen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,672,185
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,672,186
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit coupling memory device with top spin orbit coupling elec...
- Patent number 11,665,975
- Issue date May 30, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Reservoir element and neuromorphic element
- Patent number 11,665,976
- Issue date May 30, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic junctions having enhanced tunnel magnetoresistance and uti...
- Patent number 11,665,979
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,659,718
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Embedded MRAM fabrication process for ion beam etching with protect...
- Patent number 11,659,775
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jun-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and manufacturing method of magnetic memory...
- Patent number 11,659,773
- Issue date May 23, 2023
- Kioxia Corporation
- Takao Ochiai
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method for MRAM devices having spacer element
- Patent number 11,659,774
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic multi-layers containing MgO sublayers as perpendicularly m...
- Patent number 11,646,143
- Issue date May 9, 2023
- International Business Machines Corporation
- Aakash Pushp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque-based switching device and method of fabricating...
- Patent number 11,641,782
- Issue date May 2, 2023
- Korea University Research and Business Foundation
- Young Keun Kim
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Interlayer exchange coupled adder
- Patent number 11,641,783
- Issue date May 2, 2023
- Ceremorphic, Inc.
- Venkat Mattela
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin-current magnetization rotational element and spin orbit torque...
- Patent number 11,641,784
- Issue date May 2, 2023
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-plane spin orbit torque magnetoresistive stack/structure and met...
- Patent number 11,637,235
- Issue date Apr 25, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Sumio Ikegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,637,233
- Issue date Apr 25, 2023
- United Microelectronics Corp.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for multilayer structure of magnetic body and...
- Patent number 11,637,234
- Issue date Apr 25, 2023
- Tokyo Institute of Technology
- Nam Hai Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin current magnetization rotational element
- Patent number 11,637,237
- Issue date Apr 25, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Repeating alternating multilayer buffer layer
- Patent number 11,631,797
- Issue date Apr 18, 2023
- Northrop Grumman Systems Corporation
- Thomas F. Ambrose
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LATERAL HETEROSTRUCTURE ISOLATED COUPLED QUANTUM DOTS
- Publication number 20240196754
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Bogdan Cezar Zota
- B82 - NANO-TECHNOLOGY
Information Patent Application
REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...
- Publication number 20240196755
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAY...
- Publication number 20240164219
- Publication date May 16, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHABLE MAGNETIC DEVICE OR DOT FOR DATA STORAGE
- Publication number 20240147869
- Publication date May 2, 2024
- Harry Joseph TRODAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...
- Publication number 20240114803
- Publication date Apr 4, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...
- Publication number 20240112840
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...
- Publication number 20240107892
- Publication date Mar 28, 2024
- Apple Inc.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Device Comprising A Synthetic Antiferromagnetic Co...
- Publication number 20240087785
- Publication date Mar 14, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURE WITH NON-MAGNETIC AMORPHOUS INSE...
- Publication number 20240081155
- Publication date Mar 7, 2024
- HeFeChip Corporation Limited
- Young-suk Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC ARRAY
- Publication number 20240074325
- Publication date Feb 29, 2024
- TDK Corporation
- Shogo YONEMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20240065108
- Publication date Feb 22, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE AND METHOD OF F...
- Publication number 20240032441
- Publication date Jan 25, 2024
- United Microelectronics Corp.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER...
- Publication number 20240027547
- Publication date Jan 25, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Samridh Jaiswal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE
- Publication number 20240023458
- Publication date Jan 18, 2024
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNETORESISTANCE AMPLIF...
- Publication number 20240016065
- Publication date Jan 11, 2024
- Western Digital Technologies, Inc.
- Goran MIHAJLOVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240008369
- Publication date Jan 4, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly Textured 001 BiSb And Materials for Making Same
- Publication number 20240006109
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with G...
- Publication number 20240005973
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES
- Publication number 20230422629
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
BEVELED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY PILLAR STRUCTURE
- Publication number 20230422630
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALL EFFECT DEVICE WITH TRENCH ABOUT A MICRON OR GREATER IN DEPTH
- Publication number 20230413687
- Publication date Dec 21, 2023
- ALLEGRO MICROSYSTEMS, LLC
- Thomas S. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED LAYER FOR ENHANCING TUNNEL MAGNETORESISTANCE WITH PERPENDICULA...
- Publication number 20230413681
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES
- Publication number 20230413684
- Publication date Dec 21, 2023
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20230402078
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, M...
- Publication number 20230397503
- Publication date Dec 7, 2023
- SOLAR APPLIED MATERIALS TECHNOLOGY CORP.
- CHIH-WEN TANG
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
MEMORY DEVICE AND FORMATION METHOD THEREOF
- Publication number 20230397501
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Jui TSOU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECT...
- Publication number 20230389434
- Publication date Nov 30, 2023
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230389440
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-R...
- Publication number 20230389444
- Publication date Nov 30, 2023
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS

Selection of materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of semiconductor device

Low resistance MgO capping layer for perpendicularly magnetized mag...

Magnetoresistance effect element and Heusler alloy

Magnetoresistive stack with seed region and method of manufacturing...

Magnetic field controlled transistor

Semiconductor structure and manufacturing method of the same

Semiconductor device with asymmetrical pinned magnets, and method o...

Method of manufacturing magnetic tunnel junction and magnetic tunne...

Method for fabricating a crystalline metal-phosphide hetero-layer b...

Seed layer for multilayer magnetic materials

Magnetic memory device having a ferromagnetic element

Magnetic random access memory

Magnetic device and magnetic random access memory

Semiconductor device and manufacturing method of semiconductor device

Spin orbit coupling memory device with top spin orbit coupling elec...

Reservoir element and neuromorphic element

Magnetic junctions having enhanced tunnel magnetoresistance and uti...

Magnetic random access memory and manufacturing method thereof

Embedded MRAM fabrication process for ion beam etching with protect...

Magnetic memory device and manufacturing method of magnetic memory...

Structure and method for MRAM devices having spacer element

Magnetic multi-layers containing MgO sublayers as perpendicularly m...

Spin-orbit torque-based switching device and method of fabricating...

Interlayer exchange coupled adder

Spin-current magnetization rotational element and spin orbit torque...

In-plane spin orbit torque magnetoresistive stack/structure and met...

Semiconductor device and method for fabricating the same

Manufacturing method for multilayer structure of magnetic body and...

Spin current magnetization rotational element

Repeating alternating multilayer buffer layer

Patents Applicationslast 30 patents

LATERAL HETEROSTRUCTURE ISOLATED COUPLED QUANTUM DOTS

REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...

FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAY...

SWITCHABLE MAGNETIC DEVICE OR DOT FOR DATA STORAGE

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...

Magnetoresistive Device Comprising A Synthetic Antiferromagnetic Co...

MAGNETIC TUNNEL JUNCTION STRUCTURE WITH NON-MAGNETIC AMORPHOUS INSE...

MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC ARRAY

HIGH DENSITY MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE AND METHOD OF F...

CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER...

SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNETORESISTANCE AMPLIF...

MAGNETORESISTIVE RANDOM ACCESS MEMORY

Highly Textured 001 BiSb And Materials for Making Same

Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with G...

MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES

BEVELED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY PILLAR STRUCTURE

HALL EFFECT DEVICE WITH TRENCH ABOUT A MICRON OR GREATER IN DEPTH

SEED LAYER FOR ENHANCING TUNNEL MAGNETORESISTANCE WITH PERPENDICULA...

VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES

SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY...

FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, M...

MEMORY DEVICE AND FORMATION METHOD THEREOF

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECT...

MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-R...