Selective epilaxial growth

Industry

CPC
H01L21/2018

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/2018Selective epilaxial growth

Industries

Patents Grantslast 30 patents

Information Patent Grant
Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on In...
- Patent number 11,500,157
- Issue date Nov 15, 2022
- Ciena Corporation
- Charles Baudot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 11,380,542
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having confined source/drain regions with wrap-around so...
- Patent number 11,362,194
- Issue date Jun 14, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a source/drain
- Patent number 11,217,672
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-dimensional nanostructure growth on graphene and devices thereof
- Patent number 10,854,724
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Wei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming epitaxial layer at low temperature
- Patent number 10,796,915
- Issue date Oct 6, 2020
- EUGENE TECHNOLOGY CO., LTD.
- Doo Yeol Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 10,790,142
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 10,770,288
- Issue date Sep 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unmerged epitaxial process for FinFET devices with aggressive fin p...
- Patent number 10,734,499
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT-including pillar-shaped semiconductor device and method for pro...
- Patent number 10,734,391
- Issue date Aug 4, 2020
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN laminate and method of manufacturing the same
- Patent number 10,707,309
- Issue date Jul 7, 2020
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN material and method of manufacturing semiconductor device
- Patent number 10,665,683
- Issue date May 26, 2020
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing pillar-shaped semiconductor device
- Patent number 10,651,181
- Issue date May 12, 2020
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing pillar-shaped semiconductor device
- Patent number 10,651,180
- Issue date May 12, 2020
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple gate length device with self-aligned top junction
- Patent number 10,410,929
- Issue date Sep 10, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unmerged epitaxial process for FinFET devices with aggressive fin p...
- Patent number 10,388,754
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-dimensional nanostructure growth on graphene and devices thereof
- Patent number 10,134,865
- Issue date Nov 20, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Wei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures and related methods for...
- Patent number 10,074,536
- Issue date Sep 11, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated method for wafer outgassing reduction
- Patent number 10,043,667
- Issue date Aug 7, 2018
- Applied Materials, Inc.
- Chun Yan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Unmerged epitaxial process for FinFET devices with aggressive fin p...
- Patent number 10,032,884
- Issue date Jul 24, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doped germanium formation
- Patent number 9,966,438
- Issue date May 8, 2018
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 9,842,849
- Issue date Dec 12, 2017
- TOSHIBA MEMORY CORPORATION
- Hiroyuki Yamasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-dimensional nanostructure growth on graphene and devices thereof
- Patent number 9,711,607
- Issue date Jul 18, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Wei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structures having silicon germanium and silicon channels
- Patent number 9,589,848
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination of defects in long aspect ratio trapping trench structures
- Patent number 9,502,245
- Issue date Nov 22, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth techniques for reducing nanowire dimension and pitch
- Patent number 9,449,820
- Issue date Sep 20, 2016
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried bit line and method for fabricat...
- Patent number 9,431,402
- Issue date Aug 30, 2016
- Hynix Semiconductor Inc.
- Yun-Hyuck Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming NMOS EPI layers
- Patent number 8,999,798
- Issue date Apr 7, 2015
- Applied Materials, Inc.
- Mitchell C. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures and related methods for...
- Patent number 8,878,243
- Issue date Nov 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures and related methods for...
- Patent number 7,777,250
- Issue date Aug 17, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTROL DEVICE AND CONTROL METHOD FOR SINGLE-WAFER PROCESSING EPITA...
- Publication number 20220406599
- Publication date Dec 22, 2022
- SUMCO CORPORATION
- Naoyuki WADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20220328309
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chien CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super-Flexible Transparent Semiconductor Film and Preparation Metho...
- Publication number 20220310384
- Publication date Sep 29, 2022
- Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of S...
- Yukun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Source/Drain
- Publication number 20220123117
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING A PATTERNED D...
- Publication number 20220115265
- Publication date Apr 14, 2022
- Osram Opto Semiconductors GmbH
- Jens Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20200402795
- Publication date Dec 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chien CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING EPITAXIAL LAYER AT LOW TEMPERATURE
- Publication number 20190304785
- Publication date Oct 3, 2019
- EUGENE TECHNOLOGY CO., LTD.
- Doo Yeol RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN LAMINATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190273138
- Publication date Sep 5, 2019
- SCIOCS COMPANY LIMITED
- Hajime FUJIKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN MATERIAL AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190273137
- Publication date Sep 5, 2019
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SGT-INCLUDING PILLAR-SHAPED SEMICONDUCTOR DEVICE AND METHOD FOR PRO...
- Publication number 20190252392
- Publication date Aug 15, 2019
- Unisantis Electronics Singapore PTE Ltd.
- Fujio MASUOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20190164752
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20190164751
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chien CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-DIMENSIONAL NANOSTRUCTURE GROWTH ON GRAPHENE AND DEVICES THEREOF
- Publication number 20190088757
- Publication date Mar 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Wei YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN P...
- Publication number 20180277648
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-DIMENSIONAL NANOSTRUCTURE GROWTH ON GRAPHENE AND DEVICES THEREOF
- Publication number 20170317181
- Publication date Nov 2, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Wei YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED BIT LINE AND METHOD FOR FABRICAT...
- Publication number 20130161710
- Publication date Jun 27, 2013
- Yun-Hyuck Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING NMOS EPI LAYERS
- Publication number 20110175140
- Publication date Jul 21, 2011
- Applied Materials, Inc.
- MITCHELL C. TAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures and Related Methods for...
- Publication number 20100213511
- Publication date Aug 26, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-mismatched semiconductor structures and related methods for...
- Publication number 20080001169
- Publication date Jan 3, 2008
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS

Selective epilaxial growth

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on In...

Selective capping processes and structures formed thereby

Transistor having confined source/drain regions with wrap-around so...

Method of forming a source/drain

One-dimensional nanostructure growth on graphene and devices thereof

Method for forming epitaxial layer at low temperature

Selective capping processes and structures formed thereby

Selective capping processes and structures formed thereby

Unmerged epitaxial process for FinFET devices with aggressive fin p...

SGT-including pillar-shaped semiconductor device and method for pro...

GaN laminate and method of manufacturing the same

GaN material and method of manufacturing semiconductor device

Method for producing pillar-shaped semiconductor device

Method for producing pillar-shaped semiconductor device

Multiple gate length device with self-aligned top junction

Unmerged epitaxial process for FinFET devices with aggressive fin p...

One-dimensional nanostructure growth on graphene and devices thereof

Lattice-mismatched semiconductor structures and related methods for...

Integrated method for wafer outgassing reduction

Unmerged epitaxial process for FinFET devices with aggressive fin p...

Method of doped germanium formation

Semiconductor memory device and method for manufacturing the same

One-dimensional nanostructure growth on graphene and devices thereof

FinFET structures having silicon germanium and silicon channels

Elimination of defects in long aspect ratio trapping trench structures

Epitaxial growth techniques for reducing nanowire dimension and pitch

Semiconductor device having buried bit line and method for fabricat...

Methods for forming NMOS EPI layers

Lattice-mismatched semiconductor structures and related methods for...

Lattice-mismatched semiconductor structures and related methods for...

Patents Applicationslast 30 patents

CONTROL DEVICE AND CONTROL METHOD FOR SINGLE-WAFER PROCESSING EPITA...

Selective Capping Processes and Structures Formed Thereby

Super-Flexible Transparent Semiconductor Film and Preparation Metho...

Method of Forming a Source/Drain

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING A PATTERNED D...

Selective Capping Processes and Structures Formed Thereby

METHOD FOR FORMING EPITAXIAL LAYER AT LOW TEMPERATURE

GaN LAMINATE AND METHOD OF MANUFACTURING THE SAME

GaN MATERIAL AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SGT-INCLUDING PILLAR-SHAPED SEMICONDUCTOR DEVICE AND METHOD FOR PRO...

Selective Capping Processes and Structures Formed Thereby

Selective Capping Processes and Structures Formed Thereby

ONE-DIMENSIONAL NANOSTRUCTURE GROWTH ON GRAPHENE AND DEVICES THEREOF

UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN P...

ONE-DIMENSIONAL NANOSTRUCTURE GROWTH ON GRAPHENE AND DEVICES THEREOF

SEMICONDUCTOR DEVICE HAVING BURIED BIT LINE AND METHOD FOR FABRICAT...

METHODS FOR FORMING NMOS EPI LAYERS

Lattice-Mismatched Semiconductor Structures and Related Methods for...

Lattice-mismatched semiconductor structures and related methods for...