Separating from substrate

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CPC
Y10S117/915

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes non-coating apparatus therefor

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Y10S117/915Separating from substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Bond and release layer transfer process
- Patent number 10,164,144
- Issue date Dec 25, 2018
- QMAT, INC.
- Francois J. Henley
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bond and release layer transfer process
- Patent number 9,859,458
- Issue date Jan 2, 2018
- QMAT, INC.
- Francois J. Henley
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing layered member and layered member
- Patent number 9,431,570
- Issue date Aug 30, 2016
- Hamamatsu Photonics K.K.
- Tokuaki Nihashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Controlled process and resulting device
- Patent number 9,159,605
- Issue date Oct 13, 2015
- Silicon Genesis Corporation
- Francois J. Henley
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing III-N layers, and III-N layers or III-N substr...
- Patent number 9,115,444
- Issue date Aug 25, 2015
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for making a composite substrate and composite substrate acc...
- Patent number 9,011,598
- Issue date Apr 21, 2015
- Soitec
- Alice Boussagol
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing layered member and layered member
- Patent number 8,888,914
- Issue date Nov 18, 2014
- Hamamatsu Photonics K.K.
- Tokuaki Nihashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
AlGaN substrate and production method thereof
- Patent number 8,882,910
- Issue date Nov 11, 2014
- Toyoda Gosei Co., Ltd.
- Hiroshi Amano
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Controlled process and resulting device
- Patent number 8,835,282
- Issue date Sep 16, 2014
- Silicon Genesis Corporation
- Francois J. Henley
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of cutting single crystals
- Patent number 8,723,288
- Issue date May 13, 2014
- Freiberger Compound Materials GmbH
- Ralf Hammer
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Method of cutting single crystals
- Patent number 8,097,080
- Issue date Jan 17, 2012
- Freiberger Compound Materials GmbH
- Ralf Hammer
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Controlled process and resulting device
- Patent number 8,012,852
- Issue date Sep 6, 2011
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for producing III-N layers, and III-N layers or III-N substr...
- Patent number 7,998,273
- Issue date Aug 16, 2011
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal film fabrication
- Patent number 7,976,629
- Issue date Jul 12, 2011
- Adam Alexander Brailove
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Controlled process and resulting device
- Patent number 7,846,818
- Issue date Dec 7, 2010
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Diamond based substrate for electronic devices
- Patent number 7,842,134
- Issue date Nov 30, 2010
- Andrew John Whitehead
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication of active areas of different natures directly onto an i...
- Patent number 7,820,523
- Issue date Oct 26, 2010
- Commissariat a l'Energie Atomique
- François Andrieu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Bulk single crystal gallium nitride and method of making same
- Patent number 7,794,542
- Issue date Sep 14, 2010
- Cree, Inc.
- Michael A. Tischler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled cleaving process
- Patent number 7,781,305
- Issue date Aug 24, 2010
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Controlled process and resulting device
- Patent number 7,759,217
- Issue date Jul 20, 2010
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for epitaxial growth of a gallium nitride film separated fro...
- Patent number 7,488,385
- Issue date Feb 10, 2009
- Lumilog
- Hacène Lahreche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gallium nitride-based single crystal substrate
- Patent number 7,468,103
- Issue date Dec 23, 2008
- Samsung Electro-Mechanics Co., Ltd.
- Soo Min Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Controlled process and resulting device
- Patent number 7,410,887
- Issue date Aug 12, 2008
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Controlled cleaving process
- Patent number 7,371,660
- Issue date May 13, 2008
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Bulk single crystal gallium nitride and method of making same
- Patent number 7,332,031
- Issue date Feb 19, 2008
- Cree, Inc.
- Michael A. Tischler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for transferring anisotropic crystal film from do...
- Patent number 7,297,209
- Issue date Nov 20, 2007
- Nitto Denko Corporation
- Pavel I. Lazarev
- G02 - OPTICS
Information Patent Grant
Method for fabricating an epitaxial substrate
- Patent number 7,261,777
- Issue date Aug 28, 2007
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a substrate for an epitaxial growth
- Patent number 7,232,488
- Issue date Jun 19, 2007
- S.O.I. Tec Silicon on Insulator Technologies
- Takeshi Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a carrier substrate
- Patent number 7,226,509
- Issue date Jun 5, 2007
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled cleaving process
- Patent number 7,160,790
- Issue date Jan 9, 2007
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
BOND AND RELEASE LAYER TRANSFER PROCESS
- Publication number 20190103507
- Publication date Apr 4, 2019
- QMAT, Inc.
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
BOND AND RELEASE LAYER TRANSFER PROCESS
- Publication number 20180040765
- Publication date Feb 8, 2018
- QMAT, Inc.
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROLLED PROCESS AND RESULTING DEVICE
- Publication number 20140370687
- Publication date Dec 18, 2014
- Francois J. HENLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLED PROCESS AND RESULTING DEVICE
- Publication number 20130143389
- Publication date Jun 6, 2013
- Silicon Genesis Corporation
- FRANCOIS J. HENLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CUTTING SINGLE CRYSTALS
- Publication number 20110318221
- Publication date Dec 29, 2011
- FREIBERGER COMPOUND MATERIALS GMBH
- Ralf HAMMER
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
CONTROLLED PROCESS AND RESULTING DEVICE
- Publication number 20110294306
- Publication date Dec 1, 2011
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTR...
- Publication number 20110018106
- Publication date Jan 27, 2011
- FREIBERGER COMPOUND MATERIALS GmbH
- Ferdinand SCHOLZ
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROLLED PROCESS AND RESULTING DEVICE
- Publication number 20100282323
- Publication date Nov 11, 2010
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
PROCESS FOR PRODUCING LAYERED MEMBER AND LAYERED MEMBER
- Publication number 20100197069
- Publication date Aug 5, 2010
- Hamamatsu Photonics K.K.
- Tokuaki Nihashi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF CUTTING SINGLE CRYSTALS
- Publication number 20090283761
- Publication date Nov 19, 2009
- FREIBERGER COMPOUND MATERIALS GmbH
- Ralf HAMMER
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
AlGaN SUBSTRATE AND PRODUCTION METHOD THEREOF
- Publication number 20090239357
- Publication date Sep 24, 2009
- SHOWA DENKO K.K.
- Hiroshi Amano
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal Film Fabrication
- Publication number 20090170298
- Publication date Jul 2, 2009
- VAXIS TECHNOLOGIES LLC
- Adam Alexander Brailove
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
Controlled process and resulting device
- Publication number 20080286945
- Publication date Nov 20, 2008
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Diamond Based Substrate for Electronic Device
- Publication number 20080206569
- Publication date Aug 28, 2008
- Andrew John Whitehead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled cleaving process
- Publication number 20080182386
- Publication date Jul 31, 2008
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Method for Producing III-N Layers, and III-N Layers or III-N Substr...
- Publication number 20080166522
- Publication date Jul 10, 2008
- FREIBERGER COMPOUND MATERIALS GMBH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
- Publication number 20080127884
- Publication date Jun 5, 2008
- Cree, Inc.
- Michael A. Tischler
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for Producing Layered Member and Layered Member
- Publication number 20070296335
- Publication date Dec 27, 2007
- Tokuaki Nihashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Fabrication of Active Areas of Different Natures Directly Onto an I...
- Publication number 20070246702
- Publication date Oct 25, 2007
- Francois Andrieu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLED PROCESS AND RESULTING DEVICE
- Publication number 20070123013
- Publication date May 31, 2007
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
CONTROLLED PROCESS AND RESULTING DEVICE
- Publication number 20070122995
- Publication date May 31, 2007
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Method for making a composite substrate and composite substrate acc...
- Publication number 20070022940
- Publication date Feb 1, 2007
- Alice Boussagol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AlGaN substrate and production method thereof
- Publication number 20060225643
- Publication date Oct 12, 2006
- Showa Denko K.K.
- Hiroshi Amano
- C30 - CRYSTAL GROWTH
Information Patent Application
Controlled cleaving process
- Publication number 20060141747
- Publication date Jun 29, 2006
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Bulk single crystal gallium nitride and method of making same
- Publication number 20060032432
- Publication date Feb 16, 2006
- Michael A. Tischler
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for epitaxial growth of a gallium nitride film separated fro...
- Publication number 20050217565
- Publication date Oct 6, 2005
- Hacene Lahreche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled cleaving process
- Publication number 20050186758
- Publication date Aug 25, 2005
- Silicon Genesis Corporation
- Francois J. Henley
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Method and device for transferring anisotropic crystal film from do...
- Publication number 20050136345
- Publication date Jun 23, 2005
- Pavel I. Lazarev
- G02 - OPTICS
Information Patent Application
Method of manufacturing gallium nitride-based single crystal substrate
- Publication number 20050072353
- Publication date Apr 7, 2005
- Soo Min Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of fabrication of a substrate for an epitaxial growth
- Publication number 20050066886
- Publication date Mar 31, 2005
- Takeshi Akatsu
- C30 - CRYSTAL GROWTH

Separating from substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bond and release layer transfer process

Bond and release layer transfer process

Process for producing layered member and layered member

Controlled process and resulting device

Method for producing III-N layers, and III-N layers or III-N substr...

Method for making a composite substrate and composite substrate acc...

Process for producing layered member and layered member

AlGaN substrate and production method thereof

Controlled process and resulting device

Method of cutting single crystals

Method of cutting single crystals

Controlled process and resulting device

Method for producing III-N layers, and III-N layers or III-N substr...

Crystal film fabrication

Controlled process and resulting device

Diamond based substrate for electronic devices

Fabrication of active areas of different natures directly onto an i...

Bulk single crystal gallium nitride and method of making same

Controlled cleaving process

Controlled process and resulting device

Method for epitaxial growth of a gallium nitride film separated fro...

Method of manufacturing gallium nitride-based single crystal substrate

Controlled process and resulting device

Controlled cleaving process

Bulk single crystal gallium nitride and method of making same

Method and device for transferring anisotropic crystal film from do...

Method for fabricating an epitaxial substrate

Method of fabrication of a substrate for an epitaxial growth

Method for fabricating a carrier substrate

Controlled cleaving process

Patents Applicationslast 30 patents

BOND AND RELEASE LAYER TRANSFER PROCESS

BOND AND RELEASE LAYER TRANSFER PROCESS

CONTROLLED PROCESS AND RESULTING DEVICE

CONTROLLED PROCESS AND RESULTING DEVICE

METHOD OF CUTTING SINGLE CRYSTALS

CONTROLLED PROCESS AND RESULTING DEVICE

METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTR...

CONTROLLED PROCESS AND RESULTING DEVICE

PROCESS FOR PRODUCING LAYERED MEMBER AND LAYERED MEMBER

METHOD OF CUTTING SINGLE CRYSTALS

AlGaN SUBSTRATE AND PRODUCTION METHOD THEREOF

Crystal Film Fabrication

Controlled process and resulting device

Diamond Based Substrate for Electronic Device

Controlled cleaving process

Method for Producing III-N Layers, and III-N Layers or III-N Substr...

BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME

Process for Producing Layered Member and Layered Member

Fabrication of Active Areas of Different Natures Directly Onto an I...

CONTROLLED PROCESS AND RESULTING DEVICE

CONTROLLED PROCESS AND RESULTING DEVICE

Method for making a composite substrate and composite substrate acc...

AlGaN substrate and production method thereof

Controlled cleaving process

Bulk single crystal gallium nitride and method of making same

Method for epitaxial growth of a gallium nitride film separated fro...

Controlled cleaving process

Method and device for transferring anisotropic crystal film from do...

Method of manufacturing gallium nitride-based single crystal substrate

Method of fabrication of a substrate for an epitaxial growth