Setting crystal orientation

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H01L21/02027

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02027Setting crystal orientation

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Patents Grantslast 30 patents

Information Patent Grant
Method for producing a composite structure comprising a thin monocr...
- Patent number 12,087,631
- Issue date Sep 10, 2024
- Soitec
- Gweltaz Gaudin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamfered silicon carbide substrate and method of chamfering
- Patent number 11,515,140
- Issue date Nov 29, 2022
- SICRYSTAL GMBH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Grant
Shaped silicon ingot using layer transfer
- Patent number 10,683,588
- Issue date Jun 16, 2020
- Silicon Genesis Corporation
- Francois J. Henley
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Manufacturing method of gallium nitride substrate
- Patent number 10,600,645
- Issue date Mar 24, 2020
- Samsung Electronics Co., Ltd.
- Mi Hyun Kim
- B08 - CLEANING
Information Patent Grant
Method and device for slicing a shaped silicon ingot using layer tr...
- Patent number 10,087,551
- Issue date Oct 2, 2018
- SILICON GENESIS CORPORATION
- Francois J. Henley
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Method for manufacturing semiconductor device including a heat trea...
- Patent number 9,831,080
- Issue date Nov 28, 2017
- Sumitomo Electric Industries, Ltd
- Ryosuke Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for slicing a shaped silicon ingot using layer tr...
- Patent number 9,460,908
- Issue date Oct 4, 2016
- SILICON GENESIS CORPORATION
- Francois J. Henley
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Method for manufacturing silicon substrate and silicon substrate
- Patent number 9,390,905
- Issue date Jul 12, 2016
- Shin-Etsu Handotai Co., Ltd.
- Tetsuya Oka
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor light emitting device
- Patent number 9,324,916
- Issue date Apr 26, 2016
- Kabushiki Kaisha Toshiba
- Jumpei Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC wafer fit for integration with power d...
- Patent number 9,279,192
- Issue date Mar 8, 2016
- Dow Corning Corporation
- Darren Hansen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light emitting device
- Patent number 9,178,111
- Issue date Nov 3, 2015
- Kabushiki Kaisha Toshiba
- Jumpei Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for slicing a shaped silicon ingot using layer tr...
- Patent number 8,623,137
- Issue date Jan 7, 2014
- Silicon Genesis Corporation
- Francois J. Henley
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Diamond semiconductor element and process for producing the same
- Patent number 8,487,319
- Issue date Jul 16, 2013
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond semiconductor element and process for producing the same
- Patent number 8,486,816
- Issue date Jul 16, 2013
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Producing a diamond semiconductor by implanting dopant using ion im...
- Patent number 8,328,936
- Issue date Dec 11, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Field effect transistor using diamond and process for producing the...
- Patent number 8,242,511
- Issue date Aug 14, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond semiconductor element and process for producing the same
- Patent number 8,221,548
- Issue date Jul 17, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxially coated silicon wafer with 110 orientation and method fo...
- Patent number 8,133,318
- Issue date Mar 13, 2012
- Siltronic AG
- Erich Daub
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Diamond semiconductor element and process for producing the same
- Patent number 7,973,339
- Issue date Jul 5, 2011
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of producing group 3 nitride substrate wafers and group 3 ni...
- Patent number 7,662,239
- Issue date Feb 16, 2010
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B24 - GRINDING POLISHING
Information Patent Grant
Method of producing III-nitride substrate
- Patent number 7,464,702
- Issue date Dec 16, 2008
- Sumitomo Electric Industries, Ltd.
- Naoki Matsumoto
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Silicon semiconductor substrate and its manufacturing method
- Patent number 7,411,274
- Issue date Aug 12, 2008
- Shin-Etsu Handotai Co., Ltd.
- Hideki Yamanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and manufacturing method thereof
- Patent number 7,291,542
- Issue date Nov 6, 2007
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing III-nitride substrate
- Patent number 7,223,155
- Issue date May 29, 2007
- Sumitomo Electric Industries, Ltd.
- Naoki Matsumoto
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Nonintrusive wafer marking
- Patent number 6,797,585
- Issue date Sep 28, 2004
- LSI Logic Corporation
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for obtaining a wafer in semiconducting material of large di...
- Patent number 6,059,877
- Issue date May 9, 2000
- Commisariat a l'Energie Atomique
- Michel Bruel
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Method for manufacturing completely circular semiconductor wafers
- Patent number 5,927,263
- Issue date Jul 27, 1999
- NEC Corporation
- Satoru Muramatsu
- B44 - DECORATIVE ARTS
Information Patent Grant
Method for manufacturing completely circular semiconductor wafers
- Patent number 5,716,876
- Issue date Feb 10, 1998
- NEC Corporation
- Satoru Muramatsu
- B44 - DECORATIVE ARTS
Information Patent Grant
Polishing apparatus for notch portion of wafer
- Patent number 5,429,544
- Issue date Jul 4, 1995
- Shin-Etsu Handotal Co., Ltd.
- Fumihiko Hasegawa
- B24 - GRINDING POLISHING
Information Patent Grant
Orientation of INP substrate wafers
- Patent number 4,439,268
- Issue date Mar 27, 1984
- Bell Telephone Laboratories, Incorporated
- Larry A. Coldren
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20230078982
- Publication date Mar 16, 2023
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING A HANDLING SUBSTRATE FOR A COMPOSITE STRUCTURE I...
- Publication number 20230005787
- Publication date Jan 5, 2023
- SOITEC
- Young-Pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20190348272
- Publication date Nov 14, 2019
- SiCrystal GmbH
- Bernhard Ecker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHAPED SILICON INGOT USING LAYER TRANSFER
- Publication number 20190017192
- Publication date Jan 17, 2019
- Silicon Genesis Corporation
- Francois J. HENLEY
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20170076934
- Publication date Mar 16, 2017
- Ryosuke Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SIC WAFER FIT FOR INTEGRATION WITH POWER D...
- Publication number 20160032486
- Publication date Feb 4, 2016
- Dow Corning Corporation
- Darren Hansen
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20140167094
- Publication date Jun 19, 2014
- KABUSHIKI KAISHA TOSHIBA
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR SLICING A SHAPED SILICON INGOT USING LAYER TR...
- Publication number 20140106540
- Publication date Apr 17, 2014
- Silicon Genesis Corporation
- Francois J. Henley
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON SUBSTRATE AND SILICON SUBSTRATE
- Publication number 20130316139
- Publication date Nov 28, 2013
- Shin-Etsu Handotai Co., Ltd.
- Tetsuya Oka
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CONVERTING SEMICONDUCTOR LAYERS
- Publication number 20130240892
- Publication date Sep 19, 2013
- EVONIK DEGUSSA GmbH
- Patrik Stenner
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20120034737
- Publication date Feb 9, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20110070694
- Publication date Mar 24, 2011
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20110068352
- Publication date Mar 24, 2011
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20100289030
- Publication date Nov 18, 2010
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxially coated silicon wafer with 110 orientation and method fo...
- Publication number 20090304994
- Publication date Dec 10, 2009
- Siltronic AG
- Erich Daub
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20090261347
- Publication date Oct 22, 2009
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing III-nitride substrate
- Publication number 20080277667
- Publication date Nov 13, 2008
- Sumitomo Electric Industries, Ltd.
- Naoki Matsumoto
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20080217626
- Publication date Sep 11, 2008
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20080134959
- Publication date Jun 12, 2008
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20080134960
- Publication date Jun 12, 2008
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20080032487
- Publication date Feb 7, 2008
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20080032486
- Publication date Feb 7, 2008
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing group 3 nitride substrate wafers and group 3 ni...
- Publication number 20080014756
- Publication date Jan 17, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- B24 - GRINDING POLISHING
Information Patent Application
Method of producing III-nitride substrate
- Publication number 20070105485
- Publication date May 10, 2007
- Sumitomo Electric Industries, Ltd.
- Naoki Matsumoto
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
METHOD OF PRODUCING III-NITRIDE SUBSTRATE
- Publication number 20060249135
- Publication date Nov 9, 2006
- Sumitomo Electric Industries, Ltd.
- Naoki Matsumoto
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
Silicon semiconductor substrate and its manufacturing method
- Publication number 20060131553
- Publication date Jun 22, 2006
- Hideki Yamanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer and manufacturing method thereof
- Publication number 20060006423
- Publication date Jan 12, 2006
- Renesas Technology Corpo.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer and manufacturing method thereof
- Publication number 20040061200
- Publication date Apr 1, 2004
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS

Setting crystal orientation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a composite structure comprising a thin monocr...

Chamfered silicon carbide substrate and method of chamfering

Shaped silicon ingot using layer transfer

Manufacturing method of gallium nitride substrate

Method and device for slicing a shaped silicon ingot using layer tr...

Method for manufacturing semiconductor device including a heat trea...

Method and device for slicing a shaped silicon ingot using layer tr...

Method for manufacturing silicon substrate and silicon substrate

Semiconductor light emitting device

Method for manufacturing SiC wafer fit for integration with power d...

Semiconductor light emitting device

Method and device for slicing a shaped silicon ingot using layer tr...

Diamond semiconductor element and process for producing the same

Diamond semiconductor element and process for producing the same

Producing a diamond semiconductor by implanting dopant using ion im...

Field effect transistor using diamond and process for producing the...

Diamond semiconductor element and process for producing the same

Epitaxially coated silicon wafer with 110 orientation and method fo...

Diamond semiconductor element and process for producing the same

Method of producing group 3 nitride substrate wafers and group 3 ni...

Method of producing III-nitride substrate

Silicon semiconductor substrate and its manufacturing method

Semiconductor wafer and manufacturing method thereof

Method of producing III-nitride substrate

Nonintrusive wafer marking

Method for obtaining a wafer in semiconducting material of large di...

Method for manufacturing completely circular semiconductor wafers

Method for manufacturing completely circular semiconductor wafers

Polishing apparatus for notch portion of wafer

Orientation of INP substrate wafers

Patents Applicationslast 30 patents

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

METHOD FOR FORMING A HANDLING SUBSTRATE FOR A COMPOSITE STRUCTURE I...

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

SHAPED SILICON INGOT USING LAYER TRANSFER

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SIC WAFER FIT FOR INTEGRATION WITH POWER D...

SEMICONDUCTOR LIGHT EMITTING DEVICE

METHOD AND DEVICE FOR SLICING A SHAPED SILICON INGOT USING LAYER TR...

METHOD FOR MANUFACTURING SILICON SUBSTRATE AND SILICON SUBSTRATE

METHOD FOR CONVERTING SEMICONDUCTOR LAYERS

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

Epitaxially coated silicon wafer with 110 orientation and method fo...

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

Method of producing III-nitride substrate

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF

Method of producing group 3 nitride substrate wafers and group 3 ni...

Method of producing III-nitride substrate

METHOD OF PRODUCING III-NITRIDE SUBSTRATE

Silicon semiconductor substrate and its manufacturing method

Semiconductor wafer and manufacturing method thereof

Semiconductor wafer and manufacturing method thereof