silicided or salicided gate conductors

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H01L21/823443

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823443silicided or salicided gate conductors

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including gate electrode for applying tensile...
- Patent number 12,198,987
- Issue date Jan 14, 2025
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structures
- Patent number 12,148,752
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function layers for transistor gate electrodes
- Patent number 12,132,091
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including a MOS trans...
- Patent number 12,033,858
- Issue date Jul 9, 2024
- SK Hynix Inc.
- Young Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,009,429
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,942,475
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,888,064
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for silicidation of semiconductor device, and corresponding...
- Patent number 11,869,772
- Issue date Jan 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Denis Monnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,757,015
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Seunghoon Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 11,658,227
- Issue date May 23, 2023
- United Microelectronics Corp.
- Pei-Lun Jheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming memory devices
- Patent number 11,652,004
- Issue date May 16, 2023
- Winbond Electronics Corp.
- Yi-Tsung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for forming the same
- Patent number 11,588,040
- Issue date Feb 21, 2023
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Xianzhou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contacts including localized metal silicide
- Patent number 11,424,367
- Issue date Aug 23, 2022
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,398,383
- Issue date Jul 26, 2022
- Winbond Electronics Corp.
- Hsin-Huang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,387,233
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse contact and silicide process for three-dimensional semicond...
- Patent number 11,322,401
- Issue date May 3, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse contact and silicide process for three-dimensional logic de...
- Patent number 11,264,274
- Issue date Mar 1, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 11,251,283
- Issue date Feb 15, 2022
- United Microelectronics Corp.
- Pei-Lun Jheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices
- Patent number 11,245,026
- Issue date Feb 8, 2022
- Winbond Electronics Corp.
- Yi-Tsung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function layers for transistor gate electrodes
- Patent number 11,183,574
- Issue date Nov 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,101,177
- Issue date Aug 24, 2021
- Winbond Electronics Corp.
- Che-Jui Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for silicidation of semiconductor device, and corresponding...
- Patent number 11,056,342
- Issue date Jul 6, 2021
- STMicroelectronics (Crolles 2) SAS
- Denis Monnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,916,500
- Issue date Feb 9, 2021
- Renesas Electronics Corporation
- Tomohiko Aika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 10,790,373
- Issue date Sep 29, 2020
- Fuji Electric Co., Ltd.
- Makoto Utsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high-resistance gate
- Patent number 10,699,958
- Issue date Jun 30, 2020
- United Microelectronics Corp.
- Wei-Chang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-self aligned gate contacts formed over the active region of a t...
- Patent number 10,665,692
- Issue date May 26, 2020
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate process and device
- Patent number 10,629,700
- Issue date Apr 21, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Shun Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing multi-voltage devices using high-K-metal-g...
- Patent number 10,535,568
- Issue date Jan 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Han Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with source-drain silicide pullback
- Patent number 10,395,987
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chia Ching Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with an upper surfac...
- Patent number 10,354,996
- Issue date Jul 16, 2019
- Renesas Electronics Corporation
- Satoshi Kura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURES
- Publication number 20240379671
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Layers For Transistor Gate Electrodes
- Publication number 20240363711
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...
- Publication number 20240312784
- Publication date Sep 19, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240290887
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...
- Publication number 20240063062
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kouta ONOGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230420534
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ling CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...
- Publication number 20230245891
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION...
- Publication number 20230058216
- Publication date Feb 23, 2023
- Peking University
- Qianqian Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...
- Publication number 20220415658
- Publication date Dec 29, 2022
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Transistor Structures
- Publication number 20220406662
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220359745
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20220336449
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Chieh SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND CONTACTS INCLUDING LOCALIZED METAL SILICIDE
- Publication number 20220190161
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220140102
- Publication date May 5, 2022
- United Microelectronics Corp.
- Pei-Lun JHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20220115518
- Publication date Apr 14, 2022
- WINBOND ELECTRONICS CORP.
- Yi-Tsung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION LAYERS FOR TRANSISTOR GATE ELECTRODES
- Publication number 20220077296
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20220069101
- Publication date Mar 3, 2022
- Samsung Electronics Co., Ltd.
- Seunghoon CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20210407994
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Chieh SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210398813
- Publication date Dec 23, 2021
- WINBOND ELECTRONICS CORP.
- Hsin-Huang SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210376139
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE...
- Publication number 20210313467
- Publication date Oct 7, 2021
- RENESAS ELECTRONICS CORPORATION
- Hirokazu SAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210305395
- Publication date Sep 30, 2021
- United Microelectronics Corp.
- Pei-Lun JHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SILICIDATION OF SEMICONDUCTOR DEVICE, AND CORRESPONDING...
- Publication number 20210296129
- Publication date Sep 23, 2021
- STMicroelectronics (Crolles 2) SAS
- Denis Monnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210257257
- Publication date Aug 19, 2021
- WINBOND ELECTRONICS CORP.
- Che-Jui HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL LOGIC DE...
- Publication number 20210098306
- Publication date Apr 1, 2021
- TOKYO ELECTRON LIMITED
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Device And Method For Forming The Same
- Publication number 20210028299
- Publication date Jan 28, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Xianzhou LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Layers for Transistor Gate Electrodes
- Publication number 20200373400
- Publication date Nov 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Metal Gate Process and Device
- Publication number 20200251574
- Publication date Aug 6, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Shun Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE...
- Publication number 20200227557
- Publication date Jul 16, 2020
- RENESAS ELECTRONICS CORPORATION
- Hirokazu SAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELF ALIGNED GATE CONTACTS FORMED OVER THE ACTIVE REGION OF A T...
- Publication number 20200135885
- Publication date Apr 30, 2020
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

silicided or salicided gate conductors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including gate electrode for applying tensile...

High voltage transistor structures

Work function layers for transistor gate electrodes

Method for fabricating a semiconductor device including a MOS trans...

Semiconductor device and method

High voltage transistor structure

Semiconductor device and method

Method for silicidation of semiconductor device, and corresponding...

Semiconductor devices

Semiconductor structure and method for manufacturing the same

Methods for forming memory devices

LDMOS device and method for forming the same

Wrap-around contacts including localized metal silicide

Semiconductor structure and method for forming the same

Semiconductor device structure and methods of forming the same

Reverse contact and silicide process for three-dimensional semicond...

Reverse contact and silicide process for three-dimensional logic de...

Semiconductor structure and method for manufacturing the same

Memory devices

Work function layers for transistor gate electrodes

Semiconductor structure and method for forming the same

Method for silicidation of semiconductor device, and corresponding...

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing same

Semiconductor device with high-resistance gate

Non-self aligned gate contacts formed over the active region of a t...

High-K metal gate process and device

Method for manufacturing multi-voltage devices using high-K-metal-g...

Transistor with source-drain silicide pullback

Method of manufacturing a semiconductor device with an upper surfac...

Patents Applicationslast 30 patents

HIGH VOLTAGE TRANSISTOR STRUCTURES

Work Function Layers For Transistor Gate Electrodes

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...

SEMICONDUCTOR DEVICES

FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...

A SELF-ALIGNING PREPARATION METHOD FOR A DRAIN END UNDERLAP REGION...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...

High Voltage Transistor Structures

Semiconductor Device and Method

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

WRAP-AROUND CONTACTS INCLUDING LOCALIZED METAL SILICIDE

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

WORK FUNCTION LAYERS FOR TRANSISTOR GATE ELECTRODES

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Semiconductor Device and Method

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR SILICIDATION OF SEMICONDUCTOR DEVICE, AND CORRESPONDING...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL LOGIC DE...

LDMOS Device And Method For Forming The Same

Work Function Layers for Transistor Gate Electrodes

High-K Metal Gate Process and Device

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE...

NON-SELF ALIGNED GATE CONTACTS FORMED OVER THE ACTIVE REGION OF A T...