Silicon carbide

Industry

CPC
Y10S148/148

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/148Silicon carbide

Industries

Patents Grantslast 30 patents

Information Patent Grant
Highly uniform silicon carbide epitaxial layers
- Patent number 6,297,522
- Issue date Oct 2, 2001
- Cree, Inc.
- Olle Claes Erik Kordina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide integrated circuits
- Patent number 6,191,458
- Issue date Feb 20, 2001
- General Electric Company
- Dale Marius Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having capacitive storage therefor
- Patent number 6,140,671
- Issue date Oct 31, 2000
- SamSung Electronics Co., Ltd.
- Sang-in Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of very uniform silicon carbide epitaxial layers
- Patent number 6,063,186
- Issue date May 16, 2000
- Cree, Inc.
- Kenneth George Irvine
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low resistance, stable ohmic contacts to silicon carbide, and metho...
- Patent number 5,980,265
- Issue date Nov 9, 1999
- Advanced Technology Materials, Inc.
- Michael A. Tischler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal and method for growth thereof
- Patent number 5,958,132
- Issue date Sep 28, 1999
- Nippon Steel Corporation
- Jun Takahashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming electrode on diamond for electronic devices
- Patent number 5,869,390
- Issue date Feb 9, 1999
- Kabushiki Kaisha Kobe Seiko Sho
- Kozo Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor memory device having capac...
- Patent number 5,846,859
- Issue date Dec 8, 1998
- SamSung Electronics Co., Ltd.
- Sang-in Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a bipolar semiconductor device having SiC-base...
- Patent number 5,814,546
- Issue date Sep 29, 1998
- ABB Research Ltd.
- Willy Hermansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of obtaining high quality silicon dioxide passivation on sil...
- Patent number 5,776,837
- Issue date Jul 7, 1998
- Cree Research, Inc.
- John W. Palmour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming electrode on diamond for electronic devices
- Patent number 5,770,467
- Issue date Jun 23, 1998
- Kabushiki Kaisha Kobe Seiko Sho
- Kozo Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming SiC-SOI structures
- Patent number 5,759,908
- Issue date Jun 2, 1998
- University of Cincinnati
- Andrew J. Steckl
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film 2H .alpha.-SiC
- Patent number 5,723,880
- Issue date Mar 3, 1998
- Kent State University
- Mark Anthony Stan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining high quality silicon dioxide passivation on sil...
- Patent number 5,629,531
- Issue date May 13, 1997
- Cree Research, Inc.
- John W. Palmour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of obtaining high quality silicon dioxide passivation on sil...
- Patent number 5,612,260
- Issue date Mar 18, 1997
- Cree Research, Inc.
- John W. Palmour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon carbide substrates for high power microwav...
- Patent number 5,611,955
- Issue date Mar 18, 1997
- Northrop Grumman Corp.
- Donovan L. Barrett
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process of making thin film 2H .alpha.-sic by laser ablation
- Patent number 5,529,949
- Issue date Jun 25, 1996
- Kent State University
- Mark A. Stan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxially growing .alpha.-silicon carbide on a-axis .a...
- Patent number 5,501,173
- Issue date Mar 26, 1996
- Westinghouse Electric Corporation
- Albert A. Burk
- C30 - CRYSTAL GROWTH
Information Patent Grant
Platinum and platinum silicide contacts on .beta.-silicon carbide
- Patent number 5,471,072
- Issue date Nov 28, 1995
- The United States of America as represented by the Secretary of the Navy
- Nicolas A. Papanicolaou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a silicon carbide vertical MOSFET and device
- Patent number 5,451,797
- Issue date Sep 19, 1995
- Motorola, Inc.
- Kenneth L. Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sublimation growth of single crystal SiC
- Patent number 5,441,011
- Issue date Aug 15, 1995
- Nippon Steel Corporation
- Jun Takahaski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low resistance, stable ohmic contacts to silcon carbide, and method...
- Patent number 5,442,200
- Issue date Aug 15, 1995
- Advanced Technology Materials, Inc.
- Michael A. Tischler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trenches in monocrystalline silicon carbide
- Patent number 5,436,174
- Issue date Jul 25, 1995
- North Carolina State University
- Bantval J. Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming platinum ohmic contact to p-type silicon carbide
- Patent number 5,409,859
- Issue date Apr 25, 1995
- Cree Research, Inc.
- Robert C. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a silicon carbide vertical MOSFET
- Patent number 5,397,717
- Issue date Mar 14, 1995
- Motorola, Inc.
- Kenneth L. Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of silicon carbide integrated circuits
- Patent number 5,385,855
- Issue date Jan 31, 1995
- General Electric Company
- Dale M. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing silicon carbide MOSFET
- Patent number 5,384,270
- Issue date Jan 24, 1995
- Fuji Electric Co., Ltd.
- Katsunori Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the controlled growth of single-crystal films of silico...
- Patent number 5,363,800
- Issue date Nov 15, 1994
- The United States of America as represented by the United States National Aer...
- David J. Larkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a hetero-junction bi-polar transistor
- Patent number 5,350,699
- Issue date Sep 27, 1994
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field effect transistor
- Patent number 5,338,945
- Issue date Aug 16, 1994
- North Carolina State University at Raleigh
- Bantval J. Baliga
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Highly uniform silicon carbide epitaxial layers

Silicon carbide integrated circuits

Semiconductor memory device having capacitive storage therefor

Growth of very uniform silicon carbide epitaxial layers

Low resistance, stable ohmic contacts to silicon carbide, and metho...

SiC single crystal and method for growth thereof

Method for forming electrode on diamond for electronic devices

Method for manufacturing a semiconductor memory device having capac...

Method for producing a bipolar semiconductor device having SiC-base...

Method of obtaining high quality silicon dioxide passivation on sil...

Method for forming electrode on diamond for electronic devices

Method for forming SiC-SOI structures

Thin film 2H .alpha.-SiC

Method of obtaining high quality silicon dioxide passivation on sil...

Method of obtaining high quality silicon dioxide passivation on sil...

High resistivity silicon carbide substrates for high power microwav...

Process of making thin film 2H .alpha.-sic by laser ablation

Method for epitaxially growing .alpha.-silicon carbide on a-axis .a...

Platinum and platinum silicide contacts on .beta.-silicon carbide

Method of fabricating a silicon carbide vertical MOSFET and device

Sublimation growth of single crystal SiC

Low resistance, stable ohmic contacts to silcon carbide, and method...

Method of forming trenches in monocrystalline silicon carbide

Method of forming platinum ohmic contact to p-type silicon carbide

Method of fabricating a silicon carbide vertical MOSFET

Fabrication of silicon carbide integrated circuits

Method of producing silicon carbide MOSFET

Process for the controlled growth of single-crystal films of silico...

Method of manufacturing a hetero-junction bi-polar transistor

Silicon carbide field effect transistor