Silicon, silicon germanium, germanium

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H01L21/0245

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0245Silicon, silicon germanium, germanium

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Polycrystalline ceramic substrate and method of manufacture
- Patent number 12,224,173
- Issue date Feb 11, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group IIIA nitride growth system and method
- Patent number 12,211,690
- Issue date Jan 28, 2025
- Robbie J. Jorgenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,930
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tse-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer, optical emission device, method of producing a wafer, and me...
- Patent number 12,205,987
- Issue date Jan 21, 2025
- Technische Universitat Munchen
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator structure for a front side type imager
- Patent number 12,198,975
- Issue date Jan 14, 2025
- Soitec
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of cubic crystalline phase structure on silicon substrates a...
- Patent number 12,183,852
- Issue date Dec 31, 2024
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of performing gap filling including filling trenches between...
- Patent number 12,183,590
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element
- Patent number 12,163,058
- Issue date Dec 10, 2024
- Jae-Wan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride-based semiconductor devices on patterned substrates and...
- Patent number 12,154,864
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying a strain state of at least one semiconductor l...
- Patent number 12,154,786
- Issue date Nov 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,148,713
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element
- Patent number 12,146,076
- Issue date Nov 19, 2024
- Jae-Wan Park
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,142,646
- Issue date Nov 12, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 12,142,639
- Issue date Nov 12, 2024
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,125,938
- Issue date Oct 22, 2024
- Azur Space Solar Power GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and epitaxial oxide device with impact ionization
- Patent number 12,125,946
- Issue date Oct 22, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer structure to improve gan semiconductors
- Patent number 12,119,382
- Issue date Oct 15, 2024
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...
- Publication number 20250054754
- Publication date Feb 13, 2025
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20250040208
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...
- Publication number 20250040175
- Publication date Jan 30, 2025
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR D...
- Publication number 20250026962
- Publication date Jan 23, 2025
- SOULBRAIN CO., LTD
- Jae-Wan PARK
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20250015143
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429316
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Jhe Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY
- Publication number 20240429306
- Publication date Dec 26, 2024
- The Regents of the University of Michigan
- Zetian Mi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...
- Publication number 20240421246
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Saket CHADDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20240420957
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS
- Publication number 20240404824
- Publication date Dec 5, 2024
- AZUR SPACE SOLAR POWER GMBH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395867
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
Ohmic Contact for Semiconductor Structures
- Publication number 20240379360
- Publication date Nov 14, 2024
- Shiva RAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS
- Publication number 20240363420
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS
- Publication number 20240355619
- Publication date Oct 24, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin James LINTHICUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices Including Gate Barrier Layers
- Publication number 20240355880
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-POWER COMPONENT BASED ON III NITRIDE COMPOUND SEMICONDUCTORS,...
- Publication number 20240347629
- Publication date Oct 17, 2024
- Frauhofer-Gesellschaft zur Forderung Der angewandten Forschung e.V.
- Philipp Döring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR
- Publication number 20240347640
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Yi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240339320
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE AND PREPARING METHOD TH...
- Publication number 20240332371
- Publication date Oct 3, 2024
- Dynax Semiconductor, Inc.
- Hui ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURE AND METHOD OF MANUFACTURING SAME
- Publication number 20240332019
- Publication date Oct 3, 2024
- Societe de commercialisation des produits de la recherche appliquee SOCPRA Sc...
- Alexandre HEINTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED TRANSISTOR ACTIVE REGION FOR ENHANCED THERMAL CONDUCTIVITY
- Publication number 20240332355
- Publication date Oct 3, 2024
- Raytheon Company
- Caroline Reilly
- H01 - BASIC ELECTRIC ELEMENTS

Silicon, silicon germanium, germanium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Polycrystalline ceramic substrate and method of manufacture

Engineered substrate structures for power and RF applications

Group IIIA nitride growth system and method

Semiconductor device

Epitaxial oxide materials, structures, and devices

Wafer, optical emission device, method of producing a wafer, and me...

Semiconductor on insulator structure for a front side type imager

Growth of cubic crystalline phase structure on silicon substrates a...

Preparation method for semiconductor structure

Method of performing gap filling including filling trenches between...

Incorporating semiconductors on a polycrystalline diamond substrate

Nitride semiconductor, semiconductor device, and method for manufac...

Crystal growth method and a substrate for a semiconductor device

Semiconductor element

Optimized heteroepitaxial growth of semiconductors

III-nitride-based semiconductor devices on patterned substrates and...

Method for modifying a strain state of at least one semiconductor l...

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Epitaxial oxide materials, structures, and devices

Semiconductor device and method for manufacturing the same

Semiconductor element

Double-channel HEMT device and manufacturing method thereof

Nitride semiconductor, semiconductor device, and method for manufac...

Electronic device with gallium nitride transistors and method of ma...

Nitride semiconductor template, method for manufacturing nitride se...

Method of manufacturing nitride semiconductor light-emitting element

Nitride semiconductor component and process for its production

Method and epitaxial oxide device with impact ionization

Buffer layer structure to improve gan semiconductors

Optimized heteroepitaxial growth of semiconductors

Patents Applicationslast 30 patents

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...

COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR D...

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

SEMICONDUCTOR DEVICE

USER MODEL-BASED DATA LOSS PREVENTION

SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

Ohmic Contact for Semiconductor Structures

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS

SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS

Methods of Forming Semiconductor Devices Including Gate Barrier Layers

HIGH-POWER COMPONENT BASED ON III NITRIDE COMPOUND SEMICONDUCTORS,...

VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR

CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME

EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE AND PREPARING METHOD TH...

SEMICONDUCTOR HETEROSTRUCTURE AND METHOD OF MANUFACTURING SAME

SEGMENTED TRANSISTOR ACTIVE REGION FOR ENHANCED THERMAL CONDUCTIVITY