Silicon, silicon germanium, germanium

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H01L21/0245

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0245Silicon, silicon germanium, germanium

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Graded superlattice structure for gate all around devices
- Patent number 12,363,971
- Issue date Jul 15, 2025
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Near-infrared light emitting semiconductor element and method for m...
- Patent number 12,364,058
- Issue date Jul 15, 2025
- The Ritsumeikan Trust
- Shuhei Ichikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,364,059
- Issue date Jul 15, 2025
- ALLOS SEMICONDUCTORS GMBH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin height and STI depth for performance improvement in semiconduct...
- Patent number 12,356,710
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that comprises an HEMT and an HHMT with a back...
- Patent number 12,349,387
- Issue date Jul 1, 2025
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrates for III-nitride epitaxy
- Patent number 12,331,426
- Issue date Jun 17, 2025
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Victor Sizov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated circuit devices and methods of manufacturing the same
- Patent number 12,328,937
- Issue date Jun 10, 2025
- Samsung Electronics Co., Ltd.
- Jaemun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a layer of textured aluminum nitride
- Patent number 12,329,032
- Issue date Jun 10, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Stéphane Cadot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial oxide transistor
- Patent number 12,324,276
- Issue date Jun 3, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline ceramic substrate
- Patent number 12,315,721
- Issue date May 27, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for making semiconductor device with selective etching of su...
- Patent number 12,315,723
- Issue date May 27, 2025
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,317,532
- Issue date May 27, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a radio frequency silicon-on-insulator (RFSOI) wa...
- Patent number 12,315,722
- Issue date May 27, 2025
- ATOMERA INCORPORATED
- Nyles Wynn Cody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) having an indium-containin...
- Patent number 12,308,230
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,308,371
- Issue date May 20, 2025
- NATIONAL TAIWAN UNIVERSITY
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial formation support structures and associated methods
- Patent number 12,300,765
- Issue date May 13, 2025
- Micron Technology, Inc.
- Calvin Wade Sheen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formulations to selectively etch silicon-germanium relative to silicon
- Patent number 12,300,498
- Issue date May 13, 2025
- Entegris, Inc.
- Steven M. Bilodeau
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Group III nitride structures and manufacturing methods thereof
- Patent number 12,293,912
- Issue date May 6, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure for high-electron-mobility transistor and metho...
- Patent number 12,295,162
- Issue date May 6, 2025
- HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Boting Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN substrate wafer and method for manufacturing same
- Patent number 12,288,686
- Issue date Apr 29, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for compound semiconductor device
- Patent number 12,283,922
- Issue date Apr 22, 2025
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,279,444
- Issue date Apr 15, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced electronic device structures using semiconductor structure...
- Patent number 12,272,764
- Issue date Apr 8, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with low threshold voltage
- Patent number 12,272,604
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,272,761
- Issue date Apr 8, 2025
- Azur Space Solar Power GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating thin, crystalline silicon film and thin film...
- Patent number 12,272,550
- Issue date Apr 8, 2025
- Ramesh Kumar Harjivan Kakkad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor including multi-portion nitride region
- Patent number 12,266,698
- Issue date Apr 1, 2025
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,266,687
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate stripping method and epitaxial wafer
- Patent number 12,261,040
- Issue date Mar 25, 2025
- HC Semitek (Zhejiang) Co. Ltd.
- Hongpo Hu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...
- Publication number 20250239447
- Publication date Jul 24, 2025
- ATOMERA INCORPORATED
- JERRY WAYNE JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH GROUP III-N AND SILICO...
- Publication number 20250239448
- Publication date Jul 24, 2025
- ATOMERA INCORPORATED
- JERRY WAYNE JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20250241089
- Publication date Jul 24, 2025
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER
- Publication number 20250226209
- Publication date Jul 10, 2025
- HC SEMITEK (ZHEJIANG) CO., LTD.
- Hongpo HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER HAVING GAN INTERMEDIATE LAYERS FOR FORMING SEMI...
- Publication number 20250226215
- Publication date Jul 10, 2025
- ALLOS Semiconductor GmbH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURE...
- Publication number 20250204091
- Publication date Jun 19, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP 3 NITRIDE SEMICONDUCTOR TEMPLATE USI...
- Publication number 20250203899
- Publication date Jun 19, 2025
- WAVELORD CO., LTD
- Juneo SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR, INCLUDING MULTI-PORTION NITRIDE REGION
- Publication number 20250203983
- Publication date Jun 19, 2025
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SUBSTRATE WAFER FOR BUILDING GROUP III-V...
- Publication number 20250167005
- Publication date May 22, 2025
- Siltronic AG
- Brian MURPHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250169119
- Publication date May 22, 2025
- UNITED MICROELECTRONICS CORP.
- Chi-Hsuan Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250149332
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES
- Publication number 20250149334
- Publication date May 8, 2025
- The Regents of the University of Michigan
- Ping Wang
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
- Publication number 20250149333
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250132152
- Publication date Apr 24, 2025
- QROMIS,INC.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250133771
- Publication date Apr 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Syuan SIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER
- Publication number 20250118552
- Publication date Apr 10, 2025
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFAC...
- Publication number 20250092522
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Jinbum Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR WITH TOP AND BOTTOM CAP LAYERS WITH ETCH STOP
- Publication number 20250098274
- Publication date Mar 20, 2025
- Finwave Semiconductor, Inc.
- Dongfei Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE
- Publication number 20250079188
- Publication date Mar 6, 2025
- Texas State University
- Raju Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE
- Publication number 20250079171
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Tatsuya MIYAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250063786
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20250062120
- Publication date Feb 20, 2025
- Kyocera Corporation
- Takehiro NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...
- Publication number 20250054754
- Publication date Feb 13, 2025
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20250040208
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...
- Publication number 20250040175
- Publication date Jan 30, 2025
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR D...
- Publication number 20250026962
- Publication date Jan 23, 2025
- SOULBRAIN CO., LTD
- Jae-Wan PARK
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20250015143
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429316
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Jhe Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Silicon, silicon germanium, germanium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Graded superlattice structure for gate all around devices

Near-infrared light emitting semiconductor element and method for m...

Nitride semiconductor component and process for its production

Fin height and STI depth for performance improvement in semiconduct...

Semiconductor device that comprises an HEMT and an HHMT with a back...

Substrates for III-nitride epitaxy

Epitaxial wafer, semiconductor device, and method for manufacturing...

Integrated circuit devices and methods of manufacturing the same

Method for manufacturing a layer of textured aluminum nitride

Epitaxial oxide transistor

Polycrystalline ceramic substrate

Method for making semiconductor device with selective etching of su...

Semiconductor device and method for manufacturing the same

Method for making a radio frequency silicon-on-insulator (RFSOI) wa...

High electron mobility transistor (HEMT) having an indium-containin...

Semiconductor device and manufacturing method thereof

Epitaxial formation support structures and associated methods

Formulations to selectively etch silicon-germanium relative to silicon

Group III nitride structures and manufacturing methods thereof

Epitaxial structure for high-electron-mobility transistor and metho...

GaN substrate wafer and method for manufacturing same

Manufacturing method for compound semiconductor device

Semiconductor device and method for manufacturing the same

Advanced electronic device structures using semiconductor structure...

Integrated circuit device with low threshold voltage

Nitride semiconductor component and process for its production

Method of fabricating thin, crystalline silicon film and thin film...

Nitride semiconductor including multi-portion nitride region

Semiconductor device and method

Substrate stripping method and epitaxial wafer

Patents Applicationslast 30 patents

METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...

METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH GROUP III-N AND SILICO...

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER

SEMICONDUCTOR WAFER HAVING GAN INTERMEDIATE LAYERS FOR FORMING SEMI...

ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURE...

METHOD FOR MANUFACTURING GROUP 3 NITRIDE SEMICONDUCTOR TEMPLATE USI...

NITRIDE SEMICONDUCTOR, INCLUDING MULTI-PORTION NITRIDE REGION

METHOD FOR MANUFACTURING A SUBSTRATE WAFER FOR BUILDING GROUP III-V...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER

SEMICONDUCTOR PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFAC...

III-NITRIDE TRANSISTOR WITH TOP AND BOTTOM CAP LAYERS WITH ETCH STOP

INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE

SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR SUBSTRATE

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...

COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR D...

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

SEMICONDUCTOR DEVICE