Single-crystal growth by normal freezing or freezing under temperature gradient

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Patents Grantslast 30 patents

Information Patent Grant
Low etch pit density gallium arsenide crystals with boron dopant
- Patent number 12,276,044
- Issue date Apr 15, 2025
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for growing doped cesium lead halides
- Patent number 12,266,733
- Issue date Apr 1, 2025
- Northwestern University
- Mercouri G. Kanatzidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production apparatus for metal oxide single crystal and production...
- Patent number 12,258,674
- Issue date Mar 25, 2025
- Fujikoshi Machinery Corp.
- Keigo Hoshikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Rare earth halide scintillation material
- Patent number 12,227,685
- Issue date Feb 18, 2025
- Grirem Advanced Materials Co., Ltd.
- Jinqiu Yu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a substrate for an optical element
- Patent number 12,196,986
- Issue date Jan 14, 2025
- Carl Zeiss SMT GmbH
- Andreas Schmehl
- C30 - CRYSTAL GROWTH
Information Patent Grant
Orthogonal-phase BaGa4Se7 compound, orthogonal-phase BaGa4Se7 nonli...
- Patent number 12,189,269
- Issue date Jan 7, 2025
- Tianjin University of Technology
- Hongwei Yu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Device and method for continuous VGF crystal growth through reverse...
- Patent number 12,188,145
- Issue date Jan 7, 2025
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Shujie Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication methods
- Patent number 12,171,148
- Issue date Dec 17, 2024
- Microsoft Technology Licensing, LLC
- Kevin Van Hoogdalem
- B82 - NANO-TECHNOLOGY
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate-triggered directional solidification process for single c...
- Patent number 12,138,683
- Issue date Nov 12, 2024
- Shanghai Jiaotong University
- Long Zeng
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Apparatus, method, and process for directional solidification by li...
- Patent number 12,110,607
- Issue date Oct 8, 2024
- SHANGHAI UNIVERSITY
- Zhongming Ren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide single-crystal body and indium phosphide single-cr...
- Patent number 12,091,773
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Takuya Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 12,084,790
- Issue date Sep 10, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation method of conductive gallium oxide based on deep learni...
- Patent number 12,057,199
- Issue date Aug 6, 2024
- HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Hongji Qi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low etch pit density, low slip line density, and low strain indium...
- Patent number 12,054,851
- Issue date Aug 6, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Grant
Directional solidification method for superalloy single crystal bla...
- Patent number 12,023,729
- Issue date Jul 2, 2024
- Shanghai Jiao Tong University
- Long Zeng
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Semiconductor wafer, radiation detection element, radiation detecto...
- Patent number 12,021,160
- Issue date Jun 25, 2024
- JX Metals Corporation
- Koji Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for manufacturing monocrystalline silicon and cooling method...
- Patent number 12,006,590
- Issue date Jun 11, 2024
- JINKO SOLAR CO., LTD.
- Ziyang Ou
- C30 - CRYSTAL GROWTH
Information Patent Grant
Arcuate seed casting method
- Patent number 12,005,493
- Issue date Jun 11, 2024
- RTX Corporation
- Dilip M. Shah
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Crystal growth doping apparatus and crystal growth doping method
- Patent number 11,982,019
- Issue date May 14, 2024
- GlobalWafers Co., Ltd.
- Yu-Chih Chu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superconductor-semiconductor fabrication
- Patent number 11,974,509
- Issue date Apr 30, 2024
- Microsoft Technology Licensing, LLC
- Peter Krogstrup Jeppesen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanostructured battery active materials and methods of producing same
- Patent number 11,967,707
- Issue date Apr 23, 2024
- OneD Material, Inc.
- Wanqing Cao
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Device and method of manufacturing AIII-BV-crystals and substrate w...
- Patent number 11,965,266
- Issue date Apr 23, 2024
- Freiberger Compound Materials GMBH
- Stefan Eichler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
- Patent number 11,955,251
- Issue date Apr 9, 2024
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Single-crystal growing crucible, single-crystal production method a...
- Patent number 11,946,155
- Issue date Apr 2, 2024
- TDK Corporation
- Katsumi Kawasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nonlinear optical crystal, method for preparing the same and applic...
- Patent number 11,932,965
- Issue date Mar 19, 2024
- Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences
- Jiyong Yao
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Indium phosphide single crystal and indium phosphide single crystal...
- Patent number 11,926,923
- Issue date Mar 12, 2024
- Sumitomo Electric Industries, Ltd.
- Katsushi Hashio
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing polycrystalline silicon ingot using a cruci...
- Patent number 11,913,133
- Issue date Feb 27, 2024
- Lintech Corporation
- Ho Jung You
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a single-crystal turbine blade
- Patent number 11,913,356
- Issue date Feb 27, 2024
- Pratt & Whitney Canada Corp.
- Chao Zhang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing gallium oxide single crystal by casting and semi...
- Patent number 11,898,266
- Issue date Feb 13, 2024
- Hangzhou Garen Semiconductor Co., Ltd.
- Ning Xia
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Two-Dimensional Halide Perovskite Nanowires
- Publication number 20250116030
- Publication date Apr 10, 2025
- Purdue Research Foundation
- Letian DOU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING CREMATION CRYSTALS BY USING CATALYST OBTAINED...
- Publication number 20250100882
- Publication date Mar 27, 2025
- Mi Kyung KO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR AN OPTICAL ELEMENT, AND REFLEC...
- Publication number 20250093557
- Publication date Mar 20, 2025
- Carl Zeiss SMT GMBH
- Andreas SCHMEHL
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20240426025
- Publication date Dec 26, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
P-TYPE ZrCoSb-BASED HALF-HEUSLER SINGLE CRYSTAL ALLOY AND PREPARATI...
- Publication number 20240401225
- Publication date Dec 5, 2024
- Dalian University of Technology
- Huijun KANG
- C30 - CRYSTAL GROWTH
Information Patent Application
GAAS WAFER, GAAS WAFER GROUP, AND METHOD OF PRODUCING GAAS INGOT
- Publication number 20240392475
- Publication date Nov 28, 2024
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Naoya SUNACHI
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20240384436
- Publication date Nov 21, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR SYNTHESIZING AND CONTINUOUSLY GROWING PHOS...
- Publication number 20240352624
- Publication date Oct 24, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Niefeng SUN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING CREMATION CRYSTALS USING CATALYST OBTAINED THR...
- Publication number 20240309539
- Publication date Sep 19, 2024
- Mi Kyung KO
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
NANOSTRUCTURED BATTERY ACTIVE MATERIALS AND METHODS OF PRODUCING SAME
- Publication number 20240290958
- Publication date Aug 29, 2024
- OneD Material, Inc.
- Wanqing CAO
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
NANOSTRUCTURED BATTERY ACTIVE MATERIALS AND METHODS OF PRODUCING SAME
- Publication number 20240282933
- Publication date Aug 22, 2024
- OneD Material, Inc.
- Wanqing CAO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
NANOWIRES NETWORK
- Publication number 20240229290
- Publication date Jul 11, 2024
- Fundación IMDEA Materiales
- Juan José Vilatela García
- C30 - CRYSTAL GROWTH
Information Patent Application
Transferable Networks and Arrays of Nanostructures
- Publication number 20240191396
- Publication date Jun 13, 2024
- UNIVERSITY OF COPENHAGEN
- Joachim Elbeshausen Sestoft
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240175166
- Publication date May 30, 2024
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR CRYSTAL GROWTH USING SOURCE POWDER FROM CRUCIBLE WALL
- Publication number 20240150926
- Publication date May 9, 2024
- Semiconductor Components Industries, LLC
- Radek JESKO
- C30 - CRYSTAL GROWTH
Information Patent Application
Arcuate Seed Casting Method
- Publication number 20240075522
- Publication date Mar 7, 2024
- RTX Corporation
- Dilip M. Shah
- B22 - CASTING POWDER METALLURGY
Information Patent Application
PROCESS FOR MANUFACTURING A MONOCRYSTALLINE CRYSTAL, IN PARTICULAR...
- Publication number 20240060206
- Publication date Feb 22, 2024
- FAMETEC GmbH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD OF HIGH RESISTANCE GALLIUM OXIDE BASED ON DEEP L...
- Publication number 20240020521
- Publication date Jan 18, 2024
- HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Hongji QI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20230416941
- Publication date Dec 28, 2023
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOSTRUCTURED BATTERY ACTIVE MATERIALS AND METHODS OF PRODUCING SAME
- Publication number 20230411602
- Publication date Dec 21, 2023
- OneD Material, Inc.
- Wanqing CAO
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20230407522
- Publication date Dec 21, 2023
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD OF CONDUCTIVE GALLIUM OXIDE BASED ON DEEP LEARNI...
- Publication number 20230399768
- Publication date Dec 14, 2023
- HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Hongji QI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR GROWING DOPED CESIUM LEAD HALIDES
- Publication number 20230378388
- Publication date Nov 23, 2023
- Northwestern University
- Mercouri G. Kanatzidis
- C30 - CRYSTAL GROWTH
Information Patent Application
LASER-BASED AFTERHEATING FOR CRYSTAL GROWTH
- Publication number 20230295832
- Publication date Sep 21, 2023
- SCIDRE SCIENTIFIC INSTRUMENTS DRESDEN GMBH
- Robert SCHOENDUBE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER
- Publication number 20230287596
- Publication date Sep 14, 2023
- Northwestern University
- Mercouri G. Kanatzidis
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SUPERCONDUCTOR-SEMICONDUCTOR FABRICATION
- Publication number 20230247918
- Publication date Aug 3, 2023
- Microsoft Technology Licensing, LLC
- Peter Krogstrup Jeppesen
- B82 - NANO-TECHNOLOGY
Information Patent Application
PRODUCTION APPARATUS FOR METAL OXIDE SINGLE CRYSTAL AND PRODUCTION...
- Publication number 20230235478
- Publication date Jul 27, 2023
- Shinshu University
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW-DIMENSIONAL PEROVSKITE-STRUCTURED METAL HALIDE AND PREPARATION...
- Publication number 20230235219
- Publication date Jul 27, 2023
- SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
- Yuntao WU
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20230212784
- Publication date Jul 6, 2023
- AXT, Inc.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN- AND FLUORINE-DOPED CESIUM AND RUBIDIUM LEAD PEROVSKITE COMP...
- Publication number 20230203372
- Publication date Jun 29, 2023
- Northwestern University
- Wenwen Lin
- G01 - MEASURING TESTING

Single-crystal growth by normal freezing or freezing under temperature gradient

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Patents Grantslast 30 patents

Low etch pit density gallium arsenide crystals with boron dopant

Methods for growing doped cesium lead halides

Production apparatus for metal oxide single crystal and production...

Rare earth halide scintillation material

Method for producing a substrate for an optical element

Orthogonal-phase BaGa4Se7 compound, orthogonal-phase BaGa4Se7 nonli...

Device and method for continuous VGF crystal growth through reverse...

Fabrication methods

SiC wafer and manufacturing method for SiC wafer

Substrate-triggered directional solidification process for single c...

Apparatus, method, and process for directional solidification by li...

Indium phosphide single-crystal body and indium phosphide single-cr...

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Preparation method of conductive gallium oxide based on deep learni...

Low etch pit density, low slip line density, and low strain indium...

Directional solidification method for superalloy single crystal bla...

Semiconductor wafer, radiation detection element, radiation detecto...

Device for manufacturing monocrystalline silicon and cooling method...

Arcuate seed casting method

Crystal growth doping apparatus and crystal growth doping method

Superconductor-semiconductor fabrication

Nanostructured battery active materials and methods of producing same

Device and method of manufacturing AIII-BV-crystals and substrate w...

Crystal and substrate of conductive GaAs, and method for forming th...

Single-crystal growing crucible, single-crystal production method a...

Nonlinear optical crystal, method for preparing the same and applic...

Indium phosphide single crystal and indium phosphide single crystal...

Method of manufacturing polycrystalline silicon ingot using a cruci...

Method of making a single-crystal turbine blade

Method for growing gallium oxide single crystal by casting and semi...

Patents Applicationslast 30 patents

Two-Dimensional Halide Perovskite Nanowires

METHOD FOR PREPARING CREMATION CRYSTALS BY USING CATALYST OBTAINED...

METHOD FOR PRODUCING A SUBSTRATE FOR AN OPTICAL ELEMENT, AND REFLEC...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

P-TYPE ZrCoSb-BASED HALF-HEUSLER SINGLE CRYSTAL ALLOY AND PREPARATI...

GAAS WAFER, GAAS WAFER GROUP, AND METHOD OF PRODUCING GAAS INGOT

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

APPARATUS AND METHOD FOR SYNTHESIZING AND CONTINUOUSLY GROWING PHOS...

METHOD FOR PREPARING CREMATION CRYSTALS USING CATALYST OBTAINED THR...

NANOSTRUCTURED BATTERY ACTIVE MATERIALS AND METHODS OF PRODUCING SAME

NANOSTRUCTURED BATTERY ACTIVE MATERIALS AND METHODS OF PRODUCING SAME

NANOWIRES NETWORK

Transferable Networks and Arrays of Nanostructures

SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR CRYSTAL GROWTH USING SOURCE POWDER FROM CRUCIBLE WALL

Arcuate Seed Casting Method

PROCESS FOR MANUFACTURING A MONOCRYSTALLINE CRYSTAL, IN PARTICULAR...

PREPARATION METHOD OF HIGH RESISTANCE GALLIUM OXIDE BASED ON DEEP L...

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

NANOSTRUCTURED BATTERY ACTIVE MATERIALS AND METHODS OF PRODUCING SAME

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

PREPARATION METHOD OF CONDUCTIVE GALLIUM OXIDE BASED ON DEEP LEARNI...

METHODS FOR GROWING DOPED CESIUM LEAD HALIDES

LASER-BASED AFTERHEATING FOR CRYSTAL GROWTH

METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER

SUPERCONDUCTOR-SEMICONDUCTOR FABRICATION

PRODUCTION APPARATUS FOR METAL OXIDE SINGLE CRYSTAL AND PRODUCTION...

LOW-DIMENSIONAL PEROVSKITE-STRUCTURED METAL HALIDE AND PREPARATION...

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

OXYGEN- AND FLUORINE-DOPED CESIUM AND RUBIDIUM LEAD PEROVSKITE COMP...