Stabilisation or shape controlling of the molten zone

Industry

CPC
C30B13/30

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B13/00Single-crystal growth by zone-melting Refining by zone-melting

Current Industry

C30B13/30Stabilisation or shape controlling of the molten zone

Industries

Patents Grantslast 30 patents

Information Patent Grant
Field-editing technology for quantum materials synthesis using a ma...
- Patent number 11,873,573
- Issue date Jan 16, 2024
- The Regents of the University of Colorado, a Body Corporate
- Gang Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for purifying a thallium compound using a carbon powder
- Patent number 11,725,303
- Issue date Aug 15, 2023
- Northwestern University
- Mercouri G. Kanatzidis
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Crystal fiber manufacturing method
- Patent number 11,447,888
- Issue date Sep 20, 2022
- Nippon Telegraph and Telephone Corporation
- Shigeo Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling fiber growth in a laser heated pedestal grow...
- Patent number 11,352,712
- Issue date Jun 7, 2022
- Energy, United States Department of
- Michael P. Buric
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline silicon rod, processing method for polycrystalline...
- Patent number 11,167,994
- Issue date Nov 9, 2021
- Shin-Etsu Chemical Co., Ltd.
- Shuichi Miyao
- G01 - MEASURING TESTING
Information Patent Grant
Method for purifying an inorganic material using a tube having a be...
- Patent number 11,060,206
- Issue date Jul 13, 2021
- Northwestern University
- Mercouri G. Kanatzidis
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Single crystal production apparatus and single crystal production m...
- Patent number 11,028,497
- Issue date Jun 8, 2021
- Shin Akutsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of solidification in laser powder bed fusion additive manuf...
- Patent number 11,020,955
- Issue date Jun 1, 2021
- General Electric Company
- William Thomas Carter
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Method and apparatus for pulling a single crystal by the FZ method
- Patent number 11,021,808
- Issue date Jun 1, 2021
- Siltronic AG
- Thomas Schroeck
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling a single crystal by the FZ method comprising red...
- Patent number 10,988,856
- Issue date Apr 27, 2021
- Siltronic AG
- Thomas Schroeck
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal production apparatus and single crystal producing me...
- Patent number 10,975,493
- Issue date Apr 13, 2021
- Shin Akutsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling a single crystal by the FZ method comprising dyn...
- Patent number 10,907,271
- Issue date Feb 2, 2021
- Siltronic AG
- Thomas Schroeck
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline silicon rod, processing method for polycrystalline...
- Patent number 10,800,659
- Issue date Oct 13, 2020
- Shin-Etsu Chemical Co., Ltd.
- Shuichi Miyao
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
GA2O3-based single crystal substrate, and production method therefor
- Patent number 10,633,761
- Issue date Apr 28, 2020
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of solidification in laser powder bed fusion additive manuf...
- Patent number 10,532,556
- Issue date Jan 14, 2020
- General Electric Company
- William Thomas Carter
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Ga2O3-based single crystal substrate, and production method therefor
- Patent number 10,161,058
- Issue date Dec 25, 2018
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Auxiliary heating device for zone melting furnace and heat preserva...
- Patent number 10,138,573
- Issue date Nov 27, 2018
- ZHEJIANG JINGSHENG M & E CO., LTD
- Linjian Fu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for producing a monocrystal by crystallizing said monocrysta...
- Patent number 9,932,690
- Issue date Apr 3, 2018
- Siltronic AG
- Georg Raming
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and process for producing a crystal of semiconductor mate...
- Patent number 9,828,693
- Issue date Nov 28, 2017
- Siltronic AG
- Georg Brenninger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a Ti:sapphire crystal fiber by laser-heated...
- Patent number 9,444,216
- Issue date Sep 13, 2016
- NATIONAL TAIWAN UNIVERSITY
- Kuang-Yu Hsu
- G02 - OPTICS
Information Patent Grant
Method and apparatus for producing a single crystal
- Patent number 9,422,634
- Issue date Aug 23, 2016
- Siltronic AG
- Georg Raming
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Ti: sapphire crystal fiber, manufacturing method thereof, and wide...
- Patent number 9,153,933
- Issue date Oct 6, 2015
- NATIONAL TAIWAN UNIVERSITY
- Kuang-Yu Hsu
- G02 - OPTICS
Information Patent Grant
Apparatus and method for crystallization of silicon
- Patent number 8,721,789
- Issue date May 13, 2014
- ABB AB
- Jan-Erik Eriksson
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Ti: sapphire crystal fiber, manufacturing method thereof, and wide...
- Patent number 8,625,948
- Issue date Jan 7, 2014
- NATIONAL TAIWAN UNIVERSITY
- Kuang-Yu Hsu
- G02 - OPTICS
Information Patent Grant
Method for producing a single crystal composed of silicon using mol...
- Patent number 8,454,746
- Issue date Jun 4, 2013
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a monocrystalline Si wafer having an approxima...
- Patent number 8,337,615
- Issue date Dec 25, 2012
- PV Silicon Forschungs und Produktions GmbH
- Nikolai Abrosimov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process and apparatus for producing a single crystal of semiconduct...
- Patent number 8,221,550
- Issue date Jul 17, 2012
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process and apparatus for producing a single crystal of semiconduct...
- Patent number 7,655,089
- Issue date Feb 2, 2010
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for crystallizing amorphous silicon into polysilicon and mas...
- Patent number 7,579,123
- Issue date Aug 25, 2009
- Industrial Technology Research Institute
- Fang-Tsun Chu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Refining and analysis of material using horizontal cold-crucible in...
- Patent number 6,210,478
- Issue date Apr 3, 2001
- General Electric Company
- Bernard Patrick Bewlay
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Field-Editing Technology For Quantum Materials Synthesis Using A Ma...
- Publication number 20230045854
- Publication date Feb 16, 2023
- The Regents of the University of Colorado, a Body Corporate
- Gang Cao
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal Fiber Manufacturing Method
- Publication number 20210198802
- Publication date Jul 1, 2021
- Nippon Telegraph and Telephone Corporation
- Shigeo Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE SILICON ROD, PROCESSING METHOD FOR POLYCRYSTALLINE...
- Publication number 20200399132
- Publication date Dec 24, 2020
- Shin-Etsu Chemical Co., Ltd.
- Shuichi Miyao
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROL OF SOLIDIFICATION IN LASER POWDER BED FUSION ADDITIVE MANUF...
- Publication number 20200180297
- Publication date Jun 11, 2020
- GENERAL ELECTRIC COMPANY
- William Thomas CARTER
- B22 - CASTING POWDER METALLURGY
Information Patent Application
METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD
- Publication number 20200149183
- Publication date May 14, 2020
- Siltronic AG
- Thomas SCHROECK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD
- Publication number 20200141025
- Publication date May 7, 2020
- Siltronic AG
- Thomas SCHROECK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD
- Publication number 20190352795
- Publication date Nov 21, 2019
- Siltronic AG
- Thomas SCHROECK
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION M...
- Publication number 20190177874
- Publication date Jun 13, 2019
- Shin AKUTSU
- C30 - CRYSTAL GROWTH
Information Patent Application
GA2O3-BASED SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR
- Publication number 20190062942
- Publication date Feb 28, 2019
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCING ME...
- Publication number 20180274124
- Publication date Sep 27, 2018
- Shin AKUTSU
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE SILICON ROD, PROCESSING METHOD FOR POLYCRYSTALLINE...
- Publication number 20170341943
- Publication date Nov 30, 2017
- Shin-Etsu Chemical Co., Ltd.
- Shuichi Miyao
- C30 - CRYSTAL GROWTH
Information Patent Application
AUXILIARY HEATING DEVICE FOR ZONE MELTING FURNACE AND HEAT PRESERVA...
- Publication number 20160053401
- Publication date Feb 25, 2016
- ZHEJIANG JINGSHENG M & E CO., LTD
- Linjian FU
- C30 - CRYSTAL GROWTH
Information Patent Application
Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR
- Publication number 20160017512
- Publication date Jan 21, 2016
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING A COMPONENT OF SINGLE CRYSTAL OR DIRECTIONALLY SOLIDI...
- Publication number 20140305368
- Publication date Oct 16, 2014
- Siemens Aktiengesellschaft
- Anthony Davis
- C30 - CRYSTAL GROWTH
Information Patent Application
Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...
- Publication number 20140072010
- Publication date Mar 13, 2014
- National Taiwan University
- KUANG-YU HSU
- C30 - CRYSTAL GROWTH
Information Patent Application
Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...
- Publication number 20140060420
- Publication date Mar 6, 2014
- National Taiwan University
- KUANG-YU HSU
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Apparatus For Producing A Single Crystal
- Publication number 20130160698
- Publication date Jun 27, 2013
- Siltronic AG
- Georg Raming
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus And Method For Crystallization Of Silicon
- Publication number 20130104601
- Publication date May 2, 2013
- Jan-Erik Eriksson
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR CRYSTALLIZATION OF SILICON
- Publication number 20120167629
- Publication date Jul 5, 2012
- Jan-Erik Eriksson
- C30 - CRYSTAL GROWTH
Information Patent Application
Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...
- Publication number 20120051082
- Publication date Mar 1, 2012
- Kuang-Yu HSU
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing A Single Crystal Composed Of Silicon Using Mol...
- Publication number 20110185963
- Publication date Aug 4, 2011
- Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and Apparatus for Producing a Single Crystal of Semiconduct...
- Publication number 20100158783
- Publication date Jun 24, 2010
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCT...
- Publication number 20090084669
- Publication date Apr 2, 2009
- Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A MONOCRYSTALLINE SI WAFER HAVING AN APPROXIMA...
- Publication number 20090068407
- Publication date Mar 12, 2009
- PV Silicon Forschungs-und Produktions AG
- Nikolai Abrosimov
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CRYSTALLIZING AMORPHOUS SILICON INTO POLYSILICON AND MAS...
- Publication number 20070196743
- Publication date Aug 23, 2007
- Industrial Technology Research Institute
- Fang-Tsun Chu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Compound semiconductor single crystal and production process thereof
- Publication number 20070068446
- Publication date Mar 29, 2007
- Fumio Matsumoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and apparatus for producing a single crystal of semiconduct...
- Publication number 20030145781
- Publication date Aug 7, 2003
- Wacker Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH

Stabilisation or shape controlling of the molten zone

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Field-editing technology for quantum materials synthesis using a ma...

Method for purifying a thallium compound using a carbon powder

Crystal fiber manufacturing method

Method for controlling fiber growth in a laser heated pedestal grow...

Polycrystalline silicon rod, processing method for polycrystalline...

Method for purifying an inorganic material using a tube having a be...

Single crystal production apparatus and single crystal production m...

Control of solidification in laser powder bed fusion additive manuf...

Method and apparatus for pulling a single crystal by the FZ method

Method for pulling a single crystal by the FZ method comprising red...

Single crystal production apparatus and single crystal producing me...

Method for pulling a single crystal by the FZ method comprising dyn...

Polycrystalline silicon rod, processing method for polycrystalline...

GA2O3-based single crystal substrate, and production method therefor

Control of solidification in laser powder bed fusion additive manuf...

Ga2O3-based single crystal substrate, and production method therefor

Auxiliary heating device for zone melting furnace and heat preserva...

Device for producing a monocrystal by crystallizing said monocrysta...

Apparatus and process for producing a crystal of semiconductor mate...

Method of manufacturing a Ti:sapphire crystal fiber by laser-heated...

Method and apparatus for producing a single crystal

Ti: sapphire crystal fiber, manufacturing method thereof, and wide...

Apparatus and method for crystallization of silicon

Ti: sapphire crystal fiber, manufacturing method thereof, and wide...

Method for producing a single crystal composed of silicon using mol...

Method for producing a monocrystalline Si wafer having an approxima...

Process and apparatus for producing a single crystal of semiconduct...

Process and apparatus for producing a single crystal of semiconduct...

Method for crystallizing amorphous silicon into polysilicon and mas...

Refining and analysis of material using horizontal cold-crucible in...

Patents Applicationslast 30 patents

Field-Editing Technology For Quantum Materials Synthesis Using A Ma...

Crystal Fiber Manufacturing Method

POLYCRYSTALLINE SILICON ROD, PROCESSING METHOD FOR POLYCRYSTALLINE...

CONTROL OF SOLIDIFICATION IN LASER POWDER BED FUSION ADDITIVE MANUF...

METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD

METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD

METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD

SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION M...

GA2O3-BASED SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR

SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCING ME...

POLYCRYSTALLINE SILICON ROD, PROCESSING METHOD FOR POLYCRYSTALLINE...

AUXILIARY HEATING DEVICE FOR ZONE MELTING FURNACE AND HEAT PRESERVA...

Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR

MANUFACTURING A COMPONENT OF SINGLE CRYSTAL OR DIRECTIONALLY SOLIDI...

Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...

Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...

Method and Apparatus For Producing A Single Crystal

Apparatus And Method For Crystallization Of Silicon

APPARATUS AND METHOD FOR CRYSTALLIZATION OF SILICON

Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...

Method For Producing A Single Crystal Composed Of Silicon Using Mol...

Process and Apparatus for Producing a Single Crystal of Semiconduct...

PROCESS AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCT...

METHOD FOR PRODUCING A MONOCRYSTALLINE SI WAFER HAVING AN APPROXIMA...

METHOD FOR CRYSTALLIZING AMORPHOUS SILICON INTO POLYSILICON AND MAS...

Compound semiconductor single crystal and production process thereof

Process and apparatus for producing a single crystal of semiconduct...