Static bipolar memory cell structures

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/1025Static bipolar memory cell structures

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device
- Patent number 11,610,905
- Issue date Mar 21, 2023
- Kioxia Corporation
- Tomoya Inden
- G11 - INFORMATION STORAGE
Information Patent Grant
Interconnect landing method for RRAM technology
- Patent number 11,094,744
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect landing method for RRAM technology
- Patent number 10,903,274
- Issue date Jan 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect landing method for RRAM technology
- Patent number 10,566,387
- Issue date Feb 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-coupled thyristor SRAM semiconductor structures and methods o...
- Patent number 10,056,389
- Issue date Aug 21, 2018
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Complementary bipolar SRAM
- Patent number 9,929,161
- Issue date Mar 27, 2018
- International Business Machines Corporation
- Tak H. Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-transistor SRAM semiconductor structure and methods of fabrication
- Patent number 9,899,389
- Issue date Feb 20, 2018
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary bipolar SRAM
- Patent number 9,653,149
- Issue date May 16, 2017
- International Business Machines Corporation
- Tak H. Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device, method for manufacturing same, and nonvolatil...
- Patent number 9,653,478
- Issue date May 16, 2017
- Hitachi, Ltd.
- Digh Hisamoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-coupled thyristor SRAM semiconductor structures and methods o...
- Patent number 9,613,968
- Issue date Apr 4, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-transistor SRAM semiconductor structure and methods of fabrication
- Patent number 9,564,441
- Issue date Feb 7, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
SOI lateral bipolar for integrated-injection logic SRAM
- Patent number 9,472,556
- Issue date Oct 18, 2016
- International Business Machines Corporation
- Tak H. Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing same, and nonvolatil...
- Patent number 9,209,171
- Issue date Dec 8, 2015
- Hitachi, Ltd.
- Digh Hisamoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Four-transistor and five-transistor BJT-CMOS asymmetric SRAM cells
- Patent number 8,837,204
- Issue date Sep 16, 2014
- NDEP Technologies Ltd.
- Gil Asa
- G11 - INFORMATION STORAGE
Information Patent Grant
One-transistor static random access memory with integrated vertical...
- Patent number 7,781,797
- Issue date Aug 24, 2010
- International Business Machines Corporation
- Phung T. Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor-based device having dual control ports
- Patent number 7,320,895
- Issue date Jan 22, 2008
- T-RAM Semiconductor, Inc.
- Andrew Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Thyristor-based device having dual control ports
- Patent number 6,965,129
- Issue date Nov 15, 2005
- T-Ram, Inc.
- Andrew Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 6,292,390
- Issue date Sep 18, 2001
- Kabushiki Kaisha Toshiba
- Koji Sakui
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including a bipolar transistor biased to produ...
- Patent number 6,232,822
- Issue date May 15, 2001
- Kabushiki Kaisha Toshiba
- Koji Sakui
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 5,502,327
- Issue date Mar 26, 1996
- Fujitsu Limited
- Motohisa Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a programmable memory cell
- Patent number 5,471,419
- Issue date Nov 28, 1995
- U.S. Philips Corporation
- Lakshmi N. Sankaranarayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar memory cell having capacitors
- Patent number 5,313,090
- Issue date May 17, 1994
- NEC Corporation
- Takenori Morikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SCR type memory apparatus
- Patent number 5,287,303
- Issue date Feb 15, 1994
- Sony Corporation
- Takayuki Mogi
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar memory cell with isolated PNP load
- Patent number 5,276,638
- Issue date Jan 4, 1994
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar cross-coupled memory cells having improved immunity to soft...
- Patent number 5,095,355
- Issue date Mar 10, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Toru Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,016,075
- Issue date May 14, 1991
- NEC Corporation
- Yukio Minato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-ended memory cell array using interleaved bit lines and meth...
- Patent number 4,992,981
- Issue date Feb 12, 1991
- International Business Machines Corporation
- Kurt Ganssloser
- G11 - INFORMATION STORAGE
Information Patent Grant
High performance bipolar differential sense amplifier in a BiCMOS SRAM
- Patent number 4,984,196
- Issue date Jan 8, 1991
- Texas Instruments, Incorporated
- Hiep V. Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for fabricating complementary vertical transistor memory cell
- Patent number 4,981,807
- Issue date Jan 1, 1991
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation resistant bipolar memory
- Patent number 4,958,320
- Issue date Sep 18, 1990
- Hitachi, Ltd.
- Noriyuki Homma
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
INTERCONNECT LANDING METHOD FOR RRAM TECHNOLOGY
- Publication number 20210366988
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20210066325
- Publication date Mar 4, 2021
- KIOXIA Corporation
- Tomoya INDEN
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLEMENTARY BIPOLAR SRAM
- Publication number 20170236824
- Publication date Aug 17, 2017
- International Business Machines Corporation
- Tak H. Ning
- G11 - INFORMATION STORAGE
Information Patent Application
Two-Transistor SRAM Semiconductor Structure and Methods of Fabrication
- Publication number 20170148795
- Publication date May 25, 2017
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cross-Coupled Thyristor SRAM Semiconductor Structures and Methods o...
- Publication number 20160093622
- Publication date Mar 31, 2016
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two-Transistor SRAM Semiconductor Structure and Methods of Fabrication
- Publication number 20160093623
- Publication date Mar 31, 2016
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATIL...
- Publication number 20130341729
- Publication date Dec 26, 2013
- Digh Hisamoto
- G11 - INFORMATION STORAGE
Information Patent Application
FOUR-TRANSISTOR AND FIVE-TRANSISTOR BJT-CMOS ASYMMETRIC SRAM CELLS
- Publication number 20110299327
- Publication date Dec 8, 2011
- NDEP TECHNOLOGIES LTD
- Gil Asa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ONE-TRANSISTOR STATIC RANDOM ACCESS MEMORY WITH INTEGRATED VERTICAL...
- Publication number 20080029781
- Publication date Feb 7, 2008
- International Business Machines Corporation
- Phung T. Nguyen
- H01 - BASIC ELECTRIC ELEMENTS

Static bipolar memory cell structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device

Interconnect landing method for RRAM technology

Interconnect landing method for RRAM technology

Interconnect landing method for RRAM technology

Cross-coupled thyristor SRAM semiconductor structures and methods o...

Complementary bipolar SRAM

Two-transistor SRAM semiconductor structure and methods of fabrication

Complementary bipolar SRAM

Semiconductor device, method for manufacturing same, and nonvolatil...

Cross-coupled thyristor SRAM semiconductor structures and methods o...

Two-transistor SRAM semiconductor structure and methods of fabrication

SOI lateral bipolar for integrated-injection logic SRAM

Semiconductor device, method for manufacturing same, and nonvolatil...

Four-transistor and five-transistor BJT-CMOS asymmetric SRAM cells

One-transistor static random access memory with integrated vertical...

Thyristor-based device having dual control ports

Thyristor-based device having dual control ports

Semiconductor device

Semiconductor device including a bipolar transistor biased to produ...

Semiconductor device

Semiconductor device having a programmable memory cell

Bipolar memory cell having capacitors

SCR type memory apparatus

Bipolar memory cell with isolated PNP load

Bipolar cross-coupled memory cells having improved immunity to soft...

Semiconductor memory device

Double-ended memory cell array using interleaved bit lines and meth...

High performance bipolar differential sense amplifier in a BiCMOS SRAM

Process for fabricating complementary vertical transistor memory cell

Radiation resistant bipolar memory

Patents Applicationslast 30 patents

INTERCONNECT LANDING METHOD FOR RRAM TECHNOLOGY

SEMICONDUCTOR MEMORY DEVICE

COMPLEMENTARY BIPOLAR SRAM

Two-Transistor SRAM Semiconductor Structure and Methods of Fabrication

Cross-Coupled Thyristor SRAM Semiconductor Structures and Methods o...

Two-Transistor SRAM Semiconductor Structure and Methods of Fabrication

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATIL...

FOUR-TRANSISTOR AND FIVE-TRANSISTOR BJT-CMOS ASYMMETRIC SRAM CELLS

ONE-TRANSISTOR STATIC RANDOM ACCESS MEMORY WITH INTEGRATED VERTICAL...