Stirring of the molten zone

Industry

CPC
C30B13/26

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B13/00Single-crystal growth by zone-melting Refining by zone-melting

Current Industry

C30B13/26Stirring of the molten zone

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a single crystal from semiconductor material b...
- Patent number 11,788,201
- Issue date Oct 17, 2023
- Siltronic AG
- Ludwig Altmannshofer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Systems and methods for continuous-flow laser-induced nucleation
- Patent number 11,414,777
- Issue date Aug 16, 2022
- New York University
- Ryan L. Hartman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a single crystal by crystallizing the single cry...
- Patent number 9,932,691
- Issue date Apr 3, 2018
- Siltronic AG
- Georg Raming
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a single crystal composed of silicon using mol...
- Patent number 8,454,746
- Issue date Jun 4, 2013
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Doped semiconductor wafer of float zone pulled semiconductor materi...
- Patent number 7,025,827
- Issue date Apr 11, 2006
- Siltronic AG
- Rolf Knobel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and device for the production of a single crystal
- Patent number 7,011,704
- Issue date Mar 14, 2006
- Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG
- Ludwig Altmannshofer
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon single crystal produced by crucible-free float zone pulling
- Patent number 6,840,998
- Issue date Jan 11, 2005
- Siltronic AG
- Ludwig Altmannshofer
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus and method for altering the apparent effects of gravity
- Patent number 6,596,076
- Issue date Jul 22, 2003
- Director - General of Agency of Industrial Science and Technology
- Nobuko Wakayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystallogenesis method with magnetic field
- Patent number 6,554,895
- Issue date Apr 29, 2003
- Comissariat a l'Energie Atomique
- Thierry Duffar
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for producing a silicon single crystal by a float-zone me...
- Patent number 5,688,321
- Issue date Nov 18, 1997
- Shin-Etsu Handotai Co., Ltd.
- Masanori Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal by a float-zone method
- Patent number 5,556,461
- Issue date Sep 17, 1996
- Shin-Etsu Handotai Co., Ltd.
- Masanori Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing silicon monocrystalline rod
- Patent number 5,258,092
- Issue date Nov 2, 1993
- Shin-Etsu Handotai Co., Ltd.
- Hirotoshi Yamagishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Contactless heater floating zone refining and crystal growth
- Patent number 5,217,565
- Issue date Jun 8, 1993
- Wisconsin Alumni Research Foundation
- Sindo Kou
- C30 - CRYSTAL GROWTH
Information Patent Grant
Suppression or control of liquid convection in float zones in a zer...
- Patent number 4,615,760
- Issue date Oct 7, 1986
- Robert F. Dressler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing high quality crystals
- Patent number 4,267,154
- Issue date May 12, 1981
- Mueller; Georg
- Georg Mueller
- C30 - CRYSTAL GROWTH
Information Patent Grant
3843331
- Patent number 3,843,331
- Issue date Oct 22, 1974
- C30 - CRYSTAL GROWTH
Information Patent Grant
3678986
- Patent number 3,678,986
- Issue date Jul 25, 1972
- C30 - CRYSTAL GROWTH
Information Patent Grant
3490877
- Patent number 3,490,877
- Issue date Jan 20, 1970
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
3464812
- Patent number 3,464,812
- Issue date Sep 2, 1969
- C30 - CRYSTAL GROWTH
Information Patent Grant
3401021
- Patent number 3,401,021
- Issue date Sep 10, 1968
- C30 - CRYSTAL GROWTH
Information Patent Grant
3363668
- Patent number 3,363,668
- Issue date Jan 16, 1968
- C30 - CRYSTAL GROWTH
Information Patent Grant
3287107
- Patent number 3,287,107
- Issue date Nov 22, 1966
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
3234012
- Patent number 3,234,012
- Issue date Feb 8, 1966
- C30 - CRYSTAL GROWTH
Information Patent Grant
3234009
- Patent number 3,234,009
- Issue date Feb 8, 1966
- C30 - CRYSTAL GROWTH
Information Patent Grant
3216805
- Patent number 3,216,805
- Issue date Nov 9, 1965
- C30 - CRYSTAL GROWTH
Information Patent Grant
3203768
- Patent number 3,203,768
- Issue date Aug 31, 1965
- C30 - CRYSTAL GROWTH
Information Patent Grant
3190732
- Patent number 3,190,732
- Issue date Jun 22, 1965
- C30 - CRYSTAL GROWTH
Information Patent Grant
3189419
- Patent number 3,189,419
- Issue date Jun 15, 1965
- C30 - CRYSTAL GROWTH
Information Patent Grant
3086856
- Patent number 3,086,856
- Issue date Apr 23, 1963
- C30 - CRYSTAL GROWTH
Information Patent Grant
3030194
- Patent number 3,030,194
- Issue date Apr 17, 1962
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR CONTINUOUS-FLOW LASER-INDUCED NUCLEATION
- Publication number 20210025075
- Publication date Jan 28, 2021
- NEW YORK UNIVERSITY
- Ryan L. HARTMAN
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing A Single Crystal Composed Of Silicon Using Mol...
- Publication number 20110185963
- Publication date Aug 4, 2011
- Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL
- Publication number 20100107968
- Publication date May 6, 2010
- TOPSIL SIMICONDUCTOR MATERIALS A/S
- Per Vaabengaard
- C30 - CRYSTAL GROWTH
Information Patent Application
Doped semiconductor wafer of float zone pulled semiconductor materi...
- Publication number 20030192470
- Publication date Oct 16, 2003
- Wacker Siltronic AG
- Rolf Knobel
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and device for the production of a single crystal
- Publication number 20030024468
- Publication date Feb 6, 2003
- WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
- Ludwig Altmannshofer
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal produced by crucible-free float zone pulling
- Publication number 20030024469
- Publication date Feb 6, 2003
- WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
- Ludwig Altmannshofer
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystallogenesis method with magnetic field
- Publication number 20010052315
- Publication date Dec 20, 2001
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Thierry Duffar
- C30 - CRYSTAL GROWTH

Stirring of the molten zone

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a single crystal from semiconductor material b...

Systems and methods for continuous-flow laser-induced nucleation

Method for growing a single crystal by crystallizing the single cry...

Method for producing a single crystal composed of silicon using mol...

Doped semiconductor wafer of float zone pulled semiconductor materi...

Method and device for the production of a single crystal

Silicon single crystal produced by crucible-free float zone pulling

Apparatus and method for altering the apparent effects of gravity

Crystallogenesis method with magnetic field

Apparatus for producing a silicon single crystal by a float-zone me...

Method for producing a silicon single crystal by a float-zone method

Method of growing silicon monocrystalline rod

Contactless heater floating zone refining and crystal growth

Suppression or control of liquid convection in float zones in a zer...

Apparatus for manufacturing high quality crystals

3843331

3678986

3490877

3464812

3401021

3363668

3287107

3234012

3234009

3216805

3203768

3190732

3189419

3086856

3030194

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR CONTINUOUS-FLOW LASER-INDUCED NUCLEATION

Method For Producing A Single Crystal Composed Of Silicon Using Mol...

METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL

Doped semiconductor wafer of float zone pulled semiconductor materi...

Method and device for the production of a single crystal

Silicon single crystal produced by crucible-free float zone pulling

Crystallogenesis method with magnetic field