Structure characterized by the electrode material, shape, etc.

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G11C2213/52Structure characterized by the electrode material, shape, etc.

Industries

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Patents Grantslast 30 patents

Information Patent Grant
RRAM process integration scheme and cell structure with reduced mas...
- Patent number 12,232,335
- Issue date Feb 18, 2025
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Top electrode last scheme for memory cell to prevent metal redeposit
- Patent number 12,178,144
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Yen Chou
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 12,082,513
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of stackable embedded eDRAM using a binary alloy based...
- Patent number 11,985,909
- Issue date May 14, 2024
- Intel Corporation
- Elijah Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Socket design for a memory device
- Patent number 11,961,556
- Issue date Apr 16, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Grant
Matrix of elementary switches forming a message, associated reading...
- Patent number 11,887,662
- Issue date Jan 30, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Laurent Grenouillet
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance crosspoint architecture
- Patent number 11,882,774
- Issue date Jan 23, 2024
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Grant
Top electrode last scheme for memory cell to prevent metal redeposit
- Patent number 11,800,818
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Yen Chou
- G11 - INFORMATION STORAGE
Information Patent Grant
Gaussian sampling apparatus and method based on resistive random ac...
- Patent number 11,783,894
- Issue date Oct 10, 2023
- Electronics and Telecommunications Research Institute
- Moon-Seok Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming enhancement in self-selecting memory
- Patent number 11,735,261
- Issue date Aug 22, 2023
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices
- Patent number 11,735,231
- Issue date Aug 22, 2023
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual damascene crossbar array for disabling a defective resistive s...
- Patent number 11,682,471
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Joseph F. Maniscalco
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Set-while-verify circuit and reset-while verify circuit for resisti...
- Patent number 11,646,078
- Issue date May 9, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 11,563,056
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic switching element
- Patent number 11,522,141
- Issue date Dec 6, 2022
- Merck Patent GmbH
- Peer Kirsch
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with resistance change memory element a...
- Patent number 11,482,572
- Issue date Oct 25, 2022
- Kioxia Corporation
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM process integration scheme and cell structure with reduced mas...
- Patent number 11,462,585
- Issue date Oct 4, 2022
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Tapered cell profile and fabrication
- Patent number 11,404,637
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Crested barrier device and synaptic element
- Patent number 11,404,636
- Issue date Aug 2, 2022
- Applied Materials, Inc.
- Milan Pesić
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cells having increased structural stability
- Patent number 11,367,833
- Issue date Jun 21, 2022
- Intel Corporation
- Pavan Kumar Reddy Aella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM devices with reduced forming voltage
- Patent number 11,342,499
- Issue date May 24, 2022
- Intel Corporation
- Timothy E. Glassman
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance change device, manufacturing method for the same, and st...
- Patent number 11,328,769
- Issue date May 10, 2022
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current delivery and spike mitigation in a memory cell array
- Patent number 11,322,546
- Issue date May 3, 2022
- Intel Corporation
- Shafqat Ahmed
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically actuated switch
- Patent number 11,283,012
- Issue date Mar 22, 2022
- Hewlett Packard Enterprise Development LP
- R. Stanley Williams
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching atomic transistor and method for operating same
- Patent number 11,258,009
- Issue date Feb 22, 2022
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device structure including tilted sidewall and method for fa...
- Patent number 11,233,196
- Issue date Jan 25, 2022
- United Microelectronics Corp.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Socket design for a memory device
- Patent number 11,222,695
- Issue date Jan 11, 2022
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory operation method and circuit
- Patent number 11,217,304
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Sheng Chen
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20240347107
- Publication date Oct 17, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20240224825
- Publication date Jul 4, 2024
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...
- Publication number 20240215265
- Publication date Jun 27, 2024
- Seoul National University R&DB Foundation
- Cheol Seong Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURES FOR THREE-TERMINAL MEMORY CELLS
- Publication number 20240194255
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun LOY
- G11 - INFORMATION STORAGE
Information Patent Application
TOP ELECTRODE LAST SCHEME FOR MEMORY CELL TO PREVENT METAL REDEPOSIT
- Publication number 20230380304
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Yen Chou
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM PROCESS INTEGRATION SCHEME AND CELL STRUCTURE WITH REDUCED MAS...
- Publication number 20220406845
- Publication date Dec 22, 2022
- Hefei Reliance Memory Limited
- Zhichao LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAUSSIAN SAMPLING APPARATUS AND METHOD BASED ON RESISTIVE RANDOM AC...
- Publication number 20220366975
- Publication date Nov 17, 2022
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Moon-Seok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS HAVING INCREASED STRUCTURAL STABILITY
- Publication number 20220263019
- Publication date Aug 18, 2022
- Intel Corporation
- Pavan Kumar Reddy Aella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATRIX OF ELEMENTARY SWITCHES FORMING A MESSAGE, ASSOCIATED READING...
- Publication number 20220223206
- Publication date Jul 14, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Laurent GRENOUILLET
- G11 - INFORMATION STORAGE
Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20220208264
- Publication date Jun 30, 2022
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING ENHANCEMENT IN SELF-SELECTING MEMORY
- Publication number 20220172779
- Publication date Jun 2, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20220069216
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES
- Publication number 20220059763
- Publication date Feb 24, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL DAMASCENE CROSSBAR ARRAY FOR DISABLING A DEFECTIVE RESISTIVE S...
- Publication number 20210375389
- Publication date Dec 2, 2021
- International Business Machines Corporation
- Joseph F. Maniscalco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP ELECTRODE LAST SCHEME FOR MEMORY CELL TO PREVENT METAL REDEPOSIT
- Publication number 20210351349
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Yen Chou
- G11 - INFORMATION STORAGE
Information Patent Application
CRESTED BARRIER DEVICE AND SYNAPTIC ELEMENT
- Publication number 20210336134
- Publication date Oct 28, 2021
- Applied Materials, Inc.
- Milan Pesic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY
- Publication number 20210320116
- Publication date Oct 14, 2021
- Samsung Electronics Co., Ltd.
- KYUNG-HWA YUN
- G11 - INFORMATION STORAGE
Information Patent Application
Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...
- Publication number 20210257023
- Publication date Aug 19, 2021
- Silicon Storage Technology, Inc.
- HIEU VAN TRAN
- G11 - INFORMATION STORAGE
Information Patent Application
Tunable Forming Voltage for RRAM Device
- Publication number 20210234094
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Dexin Kong
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY OPERATION METHOD AND CIRCUIT
- Publication number 20210210137
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng CHEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TAPERED MEMORY CELL PROFILES
- Publication number 20210151673
- Publication date May 20, 2021
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20210151675
- Publication date May 20, 2021
- Micron Technology, Inc.
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20210151105
- Publication date May 20, 2021
- Micron Technology, Inc.
- Amitava Majumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED CELL PROFILE AND FABRICATION
- Publication number 20210119123
- Publication date Apr 22, 2021
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME
- Publication number 20210104667
- Publication date Apr 8, 2021
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20210074355
- Publication date Mar 11, 2021
- KIOXIA Corporation
- Takayuki TSUKAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20210050516
- Publication date Feb 18, 2021
- 4D-S, LTD
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20210036220
- Publication date Feb 4, 2021
- 4DS Memory, Limited
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20210036219
- Publication date Feb 4, 2021
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210013263
- Publication date Jan 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- G11 - INFORMATION STORAGE

Structure characterized by the electrode material, shape, etc.

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

RRAM process integration scheme and cell structure with reduced mas...

Top electrode last scheme for memory cell to prevent metal redeposit

Memory cells with asymmetrical electrode interfaces

Fabrication of stackable embedded eDRAM using a binary alloy based...

Socket design for a memory device

Matrix of elementary switches forming a message, associated reading...

Low resistance crosspoint architecture

Top electrode last scheme for memory cell to prevent metal redeposit

Gaussian sampling apparatus and method based on resistive random ac...

Programming enhancement in self-selecting memory

Memory devices

Dual damascene crossbar array for disabling a defective resistive s...

Non-volatile memory

Set-while-verify circuit and reset-while verify circuit for resisti...

Semiconductor memory device including phase change material layers...

Tapered memory cell profiles

Electronic switching element

Semiconductor memory device with resistance change memory element a...

RRAM process integration scheme and cell structure with reduced mas...

Tapered cell profile and fabrication

Crested barrier device and synaptic element

Memory cells having increased structural stability

RRAM devices with reduced forming voltage

Resistance change device, manufacturing method for the same, and st...

Current delivery and spike mitigation in a memory cell array

Electrically actuated switch

Switching atomic transistor and method for operating same

Memory device structure including tilted sidewall and method for fa...

Socket design for a memory device

Memory operation method and circuit

Patents Applicationslast 30 patents

SOCKET DESIGN FOR A MEMORY DEVICE

LOW RESISTANCE CROSSPOINT ARCHITECTURE

TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...

STRUCTURES FOR THREE-TERMINAL MEMORY CELLS

TOP ELECTRODE LAST SCHEME FOR MEMORY CELL TO PREVENT METAL REDEPOSIT

RRAM PROCESS INTEGRATION SCHEME AND CELL STRUCTURE WITH REDUCED MAS...

GAUSSIAN SAMPLING APPARATUS AND METHOD BASED ON RESISTIVE RANDOM AC...

MEMORY CELLS HAVING INCREASED STRUCTURAL STABILITY

MATRIX OF ELEMENTARY SWITCHES FORMING A MESSAGE, ASSOCIATED READING...

SOCKET DESIGN FOR A MEMORY DEVICE

PROGRAMMING ENHANCEMENT IN SELF-SELECTING MEMORY

LOW RESISTANCE CROSSPOINT ARCHITECTURE

MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES

DUAL DAMASCENE CROSSBAR ARRAY FOR DISABLING A DEFECTIVE RESISTIVE S...

TOP ELECTRODE LAST SCHEME FOR MEMORY CELL TO PREVENT METAL REDEPOSIT

CRESTED BARRIER DEVICE AND SYNAPTIC ELEMENT

NON-VOLATILE MEMORY

Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...

Tunable Forming Voltage for RRAM Device

MEMORY OPERATION METHOD AND CIRCUIT

TAPERED MEMORY CELL PROFILES

LOW RESISTANCE CROSSPOINT ARCHITECTURE

SOCKET DESIGN FOR A MEMORY DEVICE

TAPERED CELL PROFILE AND FABRICATION

SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME

SEMICONDUCTOR MEMORY DEVICE

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME