Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

Industry

CPC
G11C2213/55

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/55Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Selector device for two-terminal memory
- Patent number 11,776,626
- Issue date Oct 3, 2023
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 11,043,633
- Issue date Jun 22, 2021
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector device for two-terminal memory
- Patent number 10,964,388
- Issue date Mar 30, 2021
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 10,937,493
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric selectors for memory cells
- Patent number 10,910,436
- Issue date Feb 2, 2021
- Intel Corporation
- Elijah V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,862,028
- Issue date Dec 8, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,847,717
- Issue date Nov 24, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a conductive barrier layer
- Patent number 10,833,262
- Issue date Nov 10, 2020
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having side barriers
- Patent number 10,734,578
- Issue date Aug 4, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having ohmic contacts
- Patent number 10,734,576
- Issue date Aug 4, 2020
- 4D-S, Ltd.
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,734,577
- Issue date Aug 4, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,622,559
- Issue date Apr 14, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide based memory
- Patent number 10,622,061
- Issue date Apr 14, 2020
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
High temperature resistant memristor based on two-dimensional coval...
- Patent number 10,418,550
- Issue date Sep 17, 2019
- Nanjing University
- Feng Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a retention layer
- Patent number 10,381,558
- Issue date Aug 13, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,319,907
- Issue date Jun 11, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 10,158,067
- Issue date Dec 18, 2018
- TOSHIBA MEMORY CORPORATION
- Kazuhiko Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory systems and memory programming methods
- Patent number 10,121,539
- Issue date Nov 6, 2018
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory devices
- Patent number 10,090,462
- Issue date Oct 2, 2018
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short circuit reduction in an electronic component comprising a sta...
- Patent number 9,934,836
- Issue date Apr 3, 2018
- Thin Film Electronics ASA
- Christer Karlsson
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide based memory
- Patent number 9,805,789
- Issue date Oct 31, 2017
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Vacancy-modulated conductive oxide resistive RAM device including a...
- Patent number 9,754,665
- Issue date Sep 5, 2017
- SanDisk Technologies LLC
- Yangyin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional array of re-programmable non-volatile memory elem...
- Patent number 9,721,653
- Issue date Aug 1, 2017
- SanDisk Technologies LLC
- Tianhong Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory systems and memory programming methods
- Patent number 9,633,728
- Issue date Apr 25, 2017
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Nano multilayer film, field effect tube, sensor, random accessory m...
- Patent number 9,559,295
- Issue date Jan 31, 2017
- Institute of Physics, Chinese Academy of Sciences
- Xiu-Feng Han
- G11 - INFORMATION STORAGE
Information Patent Grant
High-reliability high-speed memristor
- Patent number 9,478,738
- Issue date Oct 25, 2016
- Hewlett Packard Enterprise Development LP
- Feng Miao
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory with non-linear current-voltage rela...
- Patent number 9,406,379
- Issue date Aug 2, 2016
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory element and method of manufacturing the same
- Patent number 9,391,274
- Issue date Jul 12, 2016
- Canon Anelva Corporation
- Eun-mi Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and electronic device including the same
- Patent number 9,385,311
- Issue date Jul 5, 2016
- SK Hynix Inc.
- Beom-Yong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making memory element with ion source layer comprised of...
- Patent number 9,356,232
- Issue date May 31, 2016
- Sony Corporation
- Kazuhiro Ohba
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
INFORMATION PROCESSING DEVICE AND METHOD OF DRIVING INFORMATION PRO...
- Publication number 20220407003
- Publication date Dec 22, 2022
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Hisashi SHIMA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELECTOR DEVICE FOR TWO-TERMINAL MEMORY
- Publication number 20210280246
- Publication date Sep 9, 2021
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20210050516
- Publication date Feb 18, 2021
- 4D-S, LTD
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20210036220
- Publication date Feb 4, 2021
- 4DS Memory, Limited
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20210036219
- Publication date Feb 4, 2021
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190326512
- Publication date Oct 24, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR IO...
- Publication number 20190319185
- Publication date Oct 17, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING SIDE BARRIERS
- Publication number 20190319186
- Publication date Oct 17, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING OHMIC CONTACTS
- Publication number 20190288197
- Publication date Sep 19, 2019
- 4D-S, LTD
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288198
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20190288196
- Publication date Sep 19, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288199
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288200
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICE FOR TWO-TERMINAL MEMORY
- Publication number 20190122732
- Publication date Apr 25, 2019
- Crossbar, Inc.
- Sung Hyun JO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20190088715
- Publication date Mar 21, 2019
- Toshiba Memory Corporation
- Kazuhiko YAMAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20190066784
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
High Temperature Resistant Memristor Based on Two-Dimensional Coval...
- Publication number 20180277754
- Publication date Sep 27, 2018
- Nanjing University
- Feng MIAO
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE BASED MEMORY
- Publication number 20180068723
- Publication date Mar 8, 2018
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
VACANCY-MODULATED CONDUCTIVE OXIDE RESISTIVE RAM DEVICE INCLUDING A...
- Publication number 20170221559
- Publication date Aug 3, 2017
- SanDisk Technologies LLC
- Yangyin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...
- Publication number 20170004881
- Publication date Jan 5, 2017
- SanDisk Technologies LLC
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE BASED MEMORY
- Publication number 20140362634
- Publication date Dec 11, 2014
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STO...
- Publication number 20140346433
- Publication date Nov 27, 2014
- Yung-Tin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Nano Multilayer Film, Field Effect Tube, Sensor, Random Accessory M...
- Publication number 20140321199
- Publication date Oct 30, 2014
- INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Xiu-Feng Han
- G11 - INFORMATION STORAGE
Information Patent Application
MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE
- Publication number 20140311790
- Publication date Oct 23, 2014
- Jianhua Yang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
- Publication number 20140301127
- Publication date Oct 9, 2014
- SK HYNIX INC.
- Beom-Yong KIM
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM WITH DUAL MODE OPERATION
- Publication number 20140268998
- Publication date Sep 18, 2014
- Crossbar, Inc.
- Sung Hyun JO
- G11 - INFORMATION STORAGE
Information Patent Application
SHORT CIRCUIT REDUCTION IN AN ELECTRONIC COMPONENT COMPRISING A STA...
- Publication number 20140216791
- Publication date Aug 7, 2014
- Thin Film Electronics ASA
- Christer Karlsson
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Storage System Using Opposite Polarity Programming Sig...
- Publication number 20140198558
- Publication date Jul 17, 2014
- SanDisk 3D LLC
- Jingyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY WITH NON-LINEAR CURRENT-VOLTAGE RELA...
- Publication number 20140185358
- Publication date Jul 3, 2014
- Crossbar, Inc.
- Sung Hyun JO
- G11 - INFORMATION STORAGE

Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Selector device for two-terminal memory

Resistive memory device having a template layer

Selector device for two-terminal memory

Memory systems and memory programming methods

Asymmetric selectors for memory cells

Resistive memory device having a template layer

Resistive memory device having a template layer

Resistive memory device having a conductive barrier layer

Resistive memory device having side barriers

Resistive memory device having ohmic contacts

Resistive memory device having a template layer

Resistive memory device having a template layer

Oxide based memory

High temperature resistant memristor based on two-dimensional coval...

Resistive memory device having a retention layer

Resistive memory device having a template layer

Memory device

Memory systems and memory programming methods

Resistive memory devices

Short circuit reduction in an electronic component comprising a sta...

Oxide based memory

Vacancy-modulated conductive oxide resistive RAM device including a...

Three-dimensional array of re-programmable non-volatile memory elem...

Memory systems and memory programming methods

Nano multilayer film, field effect tube, sensor, random accessory m...

High-reliability high-speed memristor

Resistive random access memory with non-linear current-voltage rela...

Nonvolatile memory element and method of manufacturing the same

Semiconductor device and electronic device including the same

Method of making memory element with ion source layer comprised of...

Patents Applicationslast 30 patents

PIEZOELECTRIC MEMORY

INFORMATION PROCESSING DEVICE AND METHOD OF DRIVING INFORMATION PRO...

SELECTOR DEVICE FOR TWO-TERMINAL MEMORY

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR IO...

RESISTIVE MEMORY DEVICE HAVING SIDE BARRIERS

RESISTIVE MEMORY DEVICE HAVING OHMIC CONTACTS

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

SELECTOR DEVICE FOR TWO-TERMINAL MEMORY

MEMORY DEVICE

Memory Systems and Memory Programming Methods

High Temperature Resistant Memristor Based on Two-Dimensional Coval...

OXIDE BASED MEMORY

VACANCY-MODULATED CONDUCTIVE OXIDE RESISTIVE RAM DEVICE INCLUDING A...

Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...

OXIDE BASED MEMORY

MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STO...

Nano Multilayer Film, Field Effect Tube, Sensor, Random Accessory M...

MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

RRAM WITH DUAL MODE OPERATION

SHORT CIRCUIT REDUCTION IN AN ELECTRONIC COMPONENT COMPRISING A STA...

Non-Volatile Storage System Using Opposite Polarity Programming Sig...

RESISTIVE RANDOM ACCESS MEMORY WITH NON-LINEAR CURRENT-VOLTAGE RELA...