the applied layer being silicon or silicide or SIPOS

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H01L21/2257

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/2257the applied layer being silicon or silicide or SIPOS

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for providing doped silicon using a diffusion barrier layer
- Patent number 12,125,705
- Issue date Oct 22, 2024
- Lam Research Corporation
- Purushottam Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,058,858
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a doped zone of a microelectronic device
- Patent number 11,942,323
- Issue date Mar 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 11,910,608
- Issue date Feb 20, 2024
- Kioxia Corporation
- Shinya Arai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor structure
- Patent number 11,830,762
- Issue date Nov 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Chen-Hao Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal high concentration boron doping of semiconductors
- Patent number 11,705,335
- Issue date Jul 18, 2023
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including polysilicon structures and method of...
- Patent number 11,676,856
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- J. J. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming gate last vertical FET with self-aligned spacers and junctions
- Patent number 11,575,024
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure for semiconductor device
- Patent number 11,575,026
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 11,515,327
- Issue date Nov 29, 2022
- Kioxia Corporation
- Shinya Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with multiple halo implants having epitaxial l...
- Patent number 11,488,871
- Issue date Nov 1, 2022
- Samar K. Saha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal high concentration boron doping of semiconductors
- Patent number 11,328,928
- Issue date May 10, 2022
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having physically unclonable function, method for manufactur...
- Patent number 11,309,262
- Issue date Apr 19, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dong Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Manufacturing method for a semiconductor device including a polysil...
- Patent number 11,295,954
- Issue date Apr 5, 2022
- Mitsubishi Electric Corporation
- Yasushi Takaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive diffuser and manufacturing method of the same
- Patent number 11,264,243
- Issue date Mar 1, 2022
- COORSTEK KK
- Hiroki Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,232,990
- Issue date Jan 25, 2022
- Renesas Electronics Corporation
- Yuta Mizukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic base doping for bipolar junction transistors
- Patent number 11,152,467
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device including polysilicon struct...
- Patent number 11,094,584
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- J. J. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor (JFET) structure and methods to fo...
- Patent number 11,094,834
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming gate last vertical FET with self-aligned spacers and junctions
- Patent number 11,038,042
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory devices
- Patent number 10,998,334
- Issue date May 4, 2021
- Samsung Electronics Co., Ltd.
- Bongyong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 10,985,181
- Issue date Apr 20, 2021
- TOSHIBA MEMORY CORPORATION
- Shinya Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of metal silicide layers on substrates and chamber compo...
- Patent number 10,950,445
- Issue date Mar 16, 2021
- Applied Materials, Inc.
- Prashant Kumar Kulshreshtha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of perfectly symmetric gate-all-around FET on suspended...
- Patent number 10,937,863
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of doping a silicon-containing material and methods of form...
- Patent number 10,937,654
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pillar-shaped semiconductor device and method for producing the same
- Patent number 10,930,761
- Issue date Feb 23, 2021
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport FET devices having a sacrificial doped layer
- Patent number 10,903,339
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain formation technique for fin-like field effect tran...
- Patent number 10,872,970
- Issue date Dec 22, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 10,847,653
- Issue date Nov 24, 2020
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 10,847,632
- Issue date Nov 24, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCTURES AND METHOD OF...
- Publication number 20230298935
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- J. J. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20230187540
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20230187266
- Publication date Jun 15, 2023
- NANYA TECHNOLOGY CORPORATION
- CHEN-HAO LIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE HALO IMPLANTS HAVING EPITAXIAL L...
- Publication number 20230042167
- Publication date Feb 9, 2023
- Samar K. Saha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20220302281
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal High Concentration Boron Doping Of Semiconductors
- Publication number 20220246432
- Publication date Aug 4, 2022
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROVIDING DOPED SILICON
- Publication number 20220165563
- Publication date May 26, 2022
- LAM RESEARCH CORPORATION
- Purushottam KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A DOPED AREA OF A MICROELECTRONIC DEVICE
- Publication number 20220157608
- Publication date May 19, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20220157847
- Publication date May 19, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCTURES AND METHOD OF...
- Publication number 20210351070
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- J. J. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Gate Last Vertical FET With Self-Aligned Spacers and Junctions
- Publication number 20210328045
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR REDUCING IMPURITY IN A FILM
- Publication number 20210272809
- Publication date Sep 2, 2021
- TOKYO ELECTRON LIMITED
- Yoshihisa MATSUBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210249314
- Publication date Aug 12, 2021
- RENESAS ELECTRONICS CORPORATION
- Yuta MIZUKAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR (JFET) STRUCTURE AND METHODS TO FO...
- Publication number 20210091236
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING PHYSICALLY UNCLONABLE FUNCTION, METHOD FOR MANUFACTUR...
- Publication number 20210035925
- Publication date Feb 4, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dong Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DIFFUSER AND MANUFACTURING METHOD OF THE SAME
- Publication number 20210005458
- Publication date Jan 7, 2021
- CoorsTek KK
- Hiroki WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION OF METAL SILICIDE LAYERS ON SUBSTRATES AND CHAMBER COMPO...
- Publication number 20200357643
- Publication date Nov 12, 2020
- Applied Materials, Inc.
- Prashant Kumar KULSHRESHTHA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Forming Gate Last Vertical FET With Self-Aligned Spacers and Junctions
- Publication number 20200287023
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF DOPING A SILICON-CONTAINING MATERIAL, METHODS OF FORMING...
- Publication number 20200243339
- Publication date Jul 30, 2020
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCT...
- Publication number 20200161174
- Publication date May 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- J. J. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE HALO IMPLANTS HAVING EPITAXIAL L...
- Publication number 20200135583
- Publication date Apr 30, 2020
- Samar K. Saha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FET DEVICES HAVING A SACRIFICIAL DOPED LAYER
- Publication number 20200075747
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WELL AND PUNCH THROUGH STOPPER FORMATION USING CONFORMAL DOPING
- Publication number 20200066531
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source and Drain Formation Technique for Fin-Like Field Effect Tran...
- Publication number 20200035812
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL HIGH CONCENTRATION BORON DOPING OF SEMICONDUCTORS
- Publication number 20190385851
- Publication date Dec 19, 2019
- Applied Materials, Inc.
- SRINIVAS GANDIKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE MATERIAL FOR ELECTRONIC DEVICE APPLICATIONS
- Publication number 20190360120
- Publication date Nov 28, 2019
- MICRON TECNOLOGY, INC.
- John Mark Meldrim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS
- Publication number 20190341454
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS
- Publication number 20190341455
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED...
- Publication number 20190341451
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...
- Publication number 20190326408
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS

the applied layer being silicon or silicide or SIPOS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for providing doped silicon using a diffusion barrier layer

Three-dimensional memory devices and methods for forming the same

Method for manufacturing a doped zone of a microelectronic device

Semiconductor device and method for manufacturing same

Method of manufacturing semiconductor structure

Conformal high concentration boron doping of semiconductors

Semiconductor device including polysilicon structures and method of...

Forming gate last vertical FET with self-aligned spacers and junctions

Source/drain structure for semiconductor device

Semiconductor device and method for manufacturing same

Transistor structure with multiple halo implants having epitaxial l...

Conformal high concentration boron doping of semiconductors

Device having physically unclonable function, method for manufactur...

Manufacturing method for a semiconductor device including a polysil...

Conductive diffuser and manufacturing method of the same

Semiconductor device and method of manufacturing the same

Extrinsic base doping for bipolar junction transistors

Method of forming semiconductor device including polysilicon struct...

Junction field effect transistor (JFET) structure and methods to fo...

Forming gate last vertical FET with self-aligned spacers and junctions

Three-dimensional semiconductor memory devices

Semiconductor device and method for manufacturing same

Deposition of metal silicide layers on substrates and chamber compo...

Fabrication of perfectly symmetric gate-all-around FET on suspended...

Methods of doping a silicon-containing material and methods of form...

Pillar-shaped semiconductor device and method for producing the same

Vertical transport FET devices having a sacrificial doped layer

Source and drain formation technique for fin-like field effect tran...

Semiconductor device having metallic source and drain regions

Semiconductor devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCTURES AND METHOD OF...

SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

TRANSISTOR STRUCTURE WITH MULTIPLE HALO IMPLANTS HAVING EPITAXIAL L...

SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE

Conformal High Concentration Boron Doping Of Semiconductors

METHOD FOR PROVIDING DOPED SILICON

METHOD OF MANUFACTURING A DOPED AREA OF A MICROELECTRONIC DEVICE

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCTURES AND METHOD OF...

Forming Gate Last Vertical FET With Self-Aligned Spacers and Junctions

METHOD AND APPARATUS FOR REDUCING IMPURITY IN A FILM

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

JUNCTION FIELD EFFECT TRANSISTOR (JFET) STRUCTURE AND METHODS TO FO...

DEVICE HAVING PHYSICALLY UNCLONABLE FUNCTION, METHOD FOR MANUFACTUR...

DIFFUSER AND MANUFACTURING METHOD OF THE SAME

DEPOSITION OF METAL SILICIDE LAYERS ON SUBSTRATES AND CHAMBER COMPO...

Forming Gate Last Vertical FET With Self-Aligned Spacers and Junctions

METHODS OF DOPING A SILICON-CONTAINING MATERIAL, METHODS OF FORMING...

METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCT...

TRANSISTOR STRUCTURE WITH MULTIPLE HALO IMPLANTS HAVING EPITAXIAL L...

VERTICAL TRANSPORT FET DEVICES HAVING A SACRIFICIAL DOPED LAYER

WELL AND PUNCH THROUGH STOPPER FORMATION USING CONFORMAL DOPING

Source and Drain Formation Technique for Fin-Like Field Effect Tran...

CONFORMAL HIGH CONCENTRATION BORON DOPING OF SEMICONDUCTORS

SOURCE MATERIAL FOR ELECTRONIC DEVICE APPLICATIONS

EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS

EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS

FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED...

METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...