the applied layer comprising oxides only

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/2255the applied layer comprising oxides only

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,888,024
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 11,855,089
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for near surface work function engineering
- Patent number 11,837,473
- Issue date Dec 5, 2023
- Applied Materials, Inc.
- Taichou Papo Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming an oxide volume within a fin
- Patent number 11,764,104
- Issue date Sep 19, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with buried sige oxide
- Patent number 11,735,650
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 11,631,673
- Issue date Apr 18, 2023
- Tahoe Research, LTD.
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation with segmented deep trench
- Patent number 11,626,317
- Issue date Apr 11, 2023
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping semiconductor materials
- Patent number 11,621,168
- Issue date Apr 4, 2023
- Gyrotron Technology, Inc.
- Vladislav Sklyarevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 11,569,230
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping techniques
- Patent number 11,443,948
- Issue date Sep 13, 2022
- Applied Materials, Inc.
- Wolfgang Aderhold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with channel-strain liner
- Patent number 11,430,890
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,387,148
- Issue date Jul 12, 2022
- United Microelectronics Corp.
- Li-Wei Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bifacial photovoltaic cell
- Patent number 11,387,382
- Issue date Jul 12, 2022
- SolAround Ltd.
- Naftali Paul Eisenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with buried SiGe oxide
- Patent number 11,380,783
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 11,302,527
- Issue date Apr 12, 2022
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-phase source doping method for FinFET structure
- Patent number 11,302,583
- Issue date Apr 12, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistors with enhanced strain and reduced paras...
- Patent number 11,257,934
- Issue date Feb 22, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maskless top source/drain epitaxial growth on vertical transport fi...
- Patent number 11,244,870
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Artificial neural networks (ANN) including a resistive element base...
- Patent number 11,227,996
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Doping through diffusion and epitaxy profile shaping
- Patent number 11,171,003
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Teng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical switching device with self-aligned contact
- Patent number 11,145,763
- Issue date Oct 12, 2021
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,139,369
- Issue date Oct 5, 2021
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusing agent composition and method of manufacturing semiconduct...
- Patent number 11,120,993
- Issue date Sep 14, 2021
- Tokyo Ohka Kogyo Co., Ltd.
- Keisuke Kubo
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semiconductor device having an edge termination region comprising a...
- Patent number 11,094,779
- Issue date Aug 17, 2021
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of bifacial cell fabrication
- Patent number 11,075,316
- Issue date Jul 27, 2021
- SolAround Ltd.
- Naftali Paul Eisenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating artificial neural networks (ANN) based on d...
- Patent number 11,024,803
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fin field-effect transistor
- Patent number 11,004,752
- Issue date May 11, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device doped from a diffused layer
- Patent number 10,964,818
- Issue date Mar 30, 2021
- Semiconductor Manufacturing (Shanghai) International Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 10,964,697
- Issue date Mar 30, 2021
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom channel isolation in nanosheet transistors
- Patent number 10,930,793
- Issue date Feb 23, 2021
- International Business Machines Corporation
- Robin H. Chao
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
FORMING AN OXIDE VOLUME WITHIN A FIN
- Publication number 20230377947
- Publication date Nov 23, 2023
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR NEAR SURFACE WORK FUNCTION ENGINEERING
- Publication number 20230230838
- Publication date Jul 20, 2023
- Applied Materials, Inc.
- Taichou Papo CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20230223406
- Publication date Jul 13, 2023
- Tahoe Research, Ltd.
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20230031720
- Publication date Feb 2, 2023
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for FinFET Device with Buried Sige Oxide
- Publication number 20230010954
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping Techniques
- Publication number 20220375753
- Publication date Nov 24, 2022
- Applied Materials, Inc.
- Wolfgang Aderhold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FINFET DEVICES
- Publication number 20220302113
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR...
- Publication number 20220223420
- Publication date Jul 14, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Mengmeng YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND A SEMICONDUC...
- Publication number 20220223419
- Publication date Jul 14, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Jie Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOLECULAR DOPING
- Publication number 20220216057
- Publication date Jul 7, 2022
- Consiglio Nazionale Delle Ricerche
- Rosaria Anna PUGLISI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20220157847
- Publication date May 19, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION WITH SEGMENTED DEEP TRENCH
- Publication number 20220130717
- Publication date Apr 28, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220077184
- Publication date Mar 10, 2022
- KIOXIA Corporation
- Atsushi FUKUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-PHASE SOURCE DOPING METHOD FOR FINFET STRUCTURE
- Publication number 20210407860
- Publication date Dec 30, 2021
- Shanghai Huali Integrated Circuit Corporation
- Yong LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20210376068
- Publication date Dec 2, 2021
- INFINEON TECHNOLOGIES AG
- Reinhard PLOSS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIFACIAL PHOTOVOLTAIC CELL
- Publication number 20210328090
- Publication date Oct 21, 2021
- SolAround Ltd.
- Naftali Paul Eisenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20210175233
- Publication date Jun 10, 2021
- Intel Corporation
- TAHIR GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuits with Channel-Strain Liner
- Publication number 20210083113
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for FinFET Device with Buried Sige Oxide
- Publication number 20210083079
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FINFET DEVICES
- Publication number 20210020634
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING AN OXIDE VOLUME WITHIN A FIN
- Publication number 20200411365
- Publication date Dec 31, 2020
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20200388487
- Publication date Dec 10, 2020
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSING AGENT COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20200373162
- Publication date Nov 26, 2020
- Tokyo Ohka Kogyo Co., Ltd.
- Keisuke KUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200273758
- Publication date Aug 27, 2020
- UNITED MICROELECTRONICS CORP.
- Li-Wei Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-DIMENSIONAL JUNCTION SEMICONDUCTOR MEMORY DEVICE AND FABRICATION...
- Publication number 20200258902
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- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASKLESS TOP SOURCE/DRAIN EPITAXIAL GROWTH ON VERTICAL TRANSPORT FI...
- Publication number 20200235015
- Publication date Jul 23, 2020
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTORS WITH ENHANCED STRAIN AND REDUCED PARAS...
- Publication number 20200219993
- Publication date Jul 9, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SWITCHING DEVICE WITH SELF-ALIGNED CONTACT
- Publication number 20200220023
- Publication date Jul 9, 2020
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20200212039
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- Intel Corporation
- TAHIR GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20200185218
- Publication date Jun 11, 2020
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS

the applied layer comprising oxides only

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming a semiconductor device

Method and structure for FinFET devices

Methods for near surface work function engineering

Forming an oxide volume within a fin

Structure and method for FinFET device with buried sige oxide

Non-planar semiconductor device having doped sub-fin region and met...

Deep trench isolation with segmented deep trench

Method and system for doping semiconductor materials

Method and structure for FinFET devices

Doping techniques

Integrated circuits with channel-strain liner

Semiconductor device

Bifacial photovoltaic cell

Structure and method for FinFET device with buried SiGe oxide

Methods for forming doped silicon oxide thin films

Solid-phase source doping method for FinFET structure

Fin field-effect transistors with enhanced strain and reduced paras...

Maskless top source/drain epitaxial growth on vertical transport fi...

Artificial neural networks (ANN) including a resistive element base...

Doping through diffusion and epitaxy profile shaping

Vertical switching device with self-aligned contact

Method of forming a semiconductor device

Diffusing agent composition and method of manufacturing semiconduct...

Semiconductor device having an edge termination region comprising a...

Method of bifacial cell fabrication

Methods for fabricating artificial neural networks (ANN) based on d...

Fin field-effect transistor

Semiconductor device doped from a diffused layer

Non-planar semiconductor device having doped sub-fin region and met...

Bottom channel isolation in nanosheet transistors

Patents Applicationslast 30 patents

FORMING AN OXIDE VOLUME WITHIN A FIN

METHODS FOR NEAR SURFACE WORK FUNCTION ENGINEERING

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

Structure and Method for FinFET Device with Buried Sige Oxide

Doping Techniques

METHOD AND STRUCTURE FOR FINFET DEVICES

MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR...

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND A SEMICONDUC...

MOLECULAR DOPING

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

DEEP TRENCH ISOLATION WITH SEGMENTED DEEP TRENCH

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SOLID-PHASE SOURCE DOPING METHOD FOR FINFET STRUCTURE

METHOD OF FORMING A SEMICONDUCTOR DEVICE

BIFACIAL PHOTOVOLTAIC CELL

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

Integrated Circuits with Channel-Strain Liner

Structure and Method for FinFET Device with Buried Sige Oxide

METHOD AND STRUCTURE FOR FINFET DEVICES

FORMING AN OXIDE VOLUME WITHIN A FIN

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

DIFFUSING AGENT COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCT...

SEMICONDUCTOR DEVICE

3-DIMENSIONAL JUNCTION SEMICONDUCTOR MEMORY DEVICE AND FABRICATION...

MASKLESS TOP SOURCE/DRAIN EPITAXIAL GROWTH ON VERTICAL TRANSPORT FI...

FIN FIELD-EFFECT TRANSISTORS WITH ENHANCED STRAIN AND REDUCED PARAS...

VERTICAL SWITCHING DEVICE WITH SELF-ALIGNED CONTACT

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS