the components being field-effect transistors with insulated gate

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CPC
H01L27/088

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/088the components being field-effect transistors with insulated gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Device contacts in integrated circuit structures
- Patent number 11,973,121
- Issue date Apr 30, 2024
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current detection circuit and garbage can
- Patent number 11,973,450
- Issue date Apr 30, 2024
- Jiangmen Jinlong High Technology Industrial Co., Ltd.
- Jinsheng Liao
- B65 - CONVEYING PACKING STORING HANDLING THIN OR FILAMENTARY MATERIAL
Information Patent Grant
Direction-dependent stress and/or strain measurement cell for a str...
- Patent number 11,971,316
- Issue date Apr 30, 2024
- Robert Bosch GmbH
- Falk Roewer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,973,077
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits including transistors with different thresho...
- Patent number 11,973,078
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple fin structures on a single substrate
- Patent number 11,973,079
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chao Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nano-sheet transistors with different threshold volt...
- Patent number RE49954
- Issue date Apr 30, 2024
- TESSERA LLC
- Karthik Balakrishnan
Information Patent Grant
Integrated circuit including transistors and a method of manufactur...
- Patent number 11,973,142
- Issue date Apr 30, 2024
- Samsung Electronics Co., Ltd.
- Sangwook Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,972,984
- Issue date Apr 30, 2024
- United Microelectronics Corp.
- Ching-Ling Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET channel on oxide structures and related methods
- Patent number 11,972,981
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,967,649
- Issue date Apr 23, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Toshihiko Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 11,967,531
- Issue date Apr 23, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xiaoguang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 11,967,533
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,967,583
- Issue date Apr 23, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter block for recessed contacts and methods forming same
- Patent number 11,967,622
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising separate different well regions wit...
- Patent number 11,967,644
- Issue date Apr 23, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,961,885
- Issue date Apr 16, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Tetsuo Gocho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing a semiconductor devic...
- Patent number 11,961,865
- Issue date Apr 16, 2024
- Sony Group Corporation
- Hideaki Togashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 11,961,838
- Issue date Apr 16, 2024
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of manufacturing the same
- Patent number 11,961,914
- Issue date Apr 16, 2024
- Samsung Electronics Co., Ltd.
- Seungmin Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with a fin and gate structure and method making...
- Patent number 11,961,900
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling threshold voltages through blocking layers
- Patent number 11,961,732
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device
- Patent number 11,961,842
- Issue date Apr 16, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,961,827
- Issue date Apr 16, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,955,484
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Jung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,955,483
- Issue date Apr 9, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including protruding insulation portions betw...
- Patent number 11,955,517
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20240145467
- Publication date May 2, 2024
- Mitsubishi Electric Corporation
- Toshiaki IWAMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240145543
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING DIELECTRIC ANCHOR VOID
- Publication number 20240145568
- Publication date May 2, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240145573
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Ilgyou Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240145569
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia YEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20240145549
- Publication date May 2, 2024
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE ISOLATED STRAINED GATE-ALL-AROUND FIELD EFFECT TRANSISTOR
- Publication number 20240145468
- Publication date May 2, 2024
- Applied Materials, Inc.
- Shawn THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TIME PROGRAMMABLE DEVICE
- Publication number 20240145469
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...
- Publication number 20240145471
- Publication date May 2, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
- Publication number 20240145485
- Publication date May 2, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Hajime Kimura
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY BLOCK AND MANUFACTURING METHOD THEREOF
- Publication number 20240145003
- Publication date May 2, 2024
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Kaiwei CAO
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR ISOLATION STRUCTURES
- Publication number 20240145546
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING DIPOLE INCORPORATION FOR THRESHOLD VOL...
- Publication number 20240145470
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lung-Kun CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN VERTICAL FIELD EFFECT TRANSISTOR AND SINGLE-FIN VERTICAL...
- Publication number 20240145313
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk YIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATION LAYER BETWEEN A NANOWIRE TRANSISTOR AND A SUBS...
- Publication number 20240145598
- Publication date May 2, 2024
- Intel Corporation
- Bruce E. Beattie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow Trench Isolation Forming Method and Structures Resulting Th...
- Publication number 20240136220
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE REGULATOR CIRCUIT
- Publication number 20240136351
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTO...
- Publication number 20240136354
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- KEUMSEOK PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136430
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- Jongmin SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136426
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- Seungheon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240136254
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- Sangkoo KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240136428
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240128332
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Sang Shin JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL SOURCE/DRAIN FOR METALLIC SOURCE/DRAIN HORIZONTAL GATE...
- Publication number 20240128355
- Publication date Apr 18, 2024
- Applied Materials, Inc.
- Nicolas Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240128375
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS
- Publication number 20240128237
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240128264
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Ji Min Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DE...
- Publication number 20240128376
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20240128165
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20240128265
- Publication date Apr 18, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jian CHEN
- H01 - BASIC ELECTRIC ELEMENTS

the components being field-effect transistors with insulated gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Device contacts in integrated circuit structures

Current detection circuit and garbage can

Direction-dependent stress and/or strain measurement cell for a str...

Semiconductor device and manufacturing method thereof

Apparatus and circuits including transistors with different thresho...

Integration of multiple fin structures on a single substrate

Fabrication of nano-sheet transistors with different threshold volt...

Integrated circuit including transistors and a method of manufactur...

Semiconductor device and method for fabricating the same

FinFET channel on oxide structures and related methods

Semiconductor device

Semiconductor structure and forming method thereof

Semiconductor devices and methods of manufacturing thereof

3D semiconductor device and structure with metal layers

Inter block for recessed contacts and methods forming same

Semiconductor device comprising separate different well regions wit...

Semiconductor device

Semiconductor device, method of manufacturing a semiconductor devic...

Fin end plug structures for advanced integrated circuit structure f...

Integrated circuit devices and methods of manufacturing the same

Integrated circuit with a fin and gate structure and method making...

Controlling threshold voltages through blocking layers

Light-emitting device

3D semiconductor device and structure with metal layers

Semiconductor device and manufacturing method thereof

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Semiconductor device and fabrication method thereof

Semiconductor devices including protruding insulation portions betw...

Manufacturable thin film gallium and nitrogen containing devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

INTEGRATED CIRCUIT STRUCTURES HAVING DIELECTRIC ANCHOR VOID

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

SUBSTRATE ISOLATED STRAINED GATE-ALL-AROUND FIELD EFFECT TRANSISTOR

ONE TIME PROGRAMMABLE DEVICE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

MEMORY BLOCK AND MANUFACTURING METHOD THEREOF

TRANSISTOR ISOLATION STRUCTURES

INTEGRATED CIRCUIT INCLUDING DIPOLE INCORPORATION FOR THRESHOLD VOL...

MULTI-FIN VERTICAL FIELD EFFECT TRANSISTOR AND SINGLE-FIN VERTICAL...

DIELECTRIC ISOLATION LAYER BETWEEN A NANOWIRE TRANSISTOR AND A SUBS...

Shallow Trench Isolation Forming Method and Structures Resulting Th...

VOLTAGE REGULATOR CIRCUIT

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTO...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT DEVICE

Semiconductor Device and Method

SEMICONDUCTOR DEVICES

SACRIFICIAL SOURCE/DRAIN FOR METALLIC SOURCE/DRAIN HORIZONTAL GATE...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS

SEMICONDUCTOR DEVICES

METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DE...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE