the control gate being a doped region

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/11558the control gate being a doped region

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for converting a floating gate non-volatile memory cell to a...
- Patent number 11,665,915
- Issue date May 30, 2023
- STMICROELECTRONICS INTERNATIONAL N.V.
- Fabio De Santis
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory structure and fabrication method thereof
- Patent number 11,659,710
- Issue date May 23, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Liang Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor non-volatile memory devices
- Patent number 11,641,739
- Issue date May 2, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,515,316
- Issue date Nov 29, 2022
- United Microelectronics Corp.
- Tzu-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device capable of improving erase and program efficiency
- Patent number 11,502,096
- Issue date Nov 15, 2022
- eMemory Technology Inc.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-finger gate nonvolatile memory cell
- Patent number 11,495,608
- Issue date Nov 8, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with a graphene channel and methods...
- Patent number 11,476,272
- Issue date Oct 18, 2022
- SanDisk Technologies LLC
- Peter Rabkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially silicided nonvolatile memory devices and integration schemes
- Patent number 11,450,677
- Issue date Sep 20, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid memory structure
- Patent number 11,437,347
- Issue date Sep 6, 2022
- Powerchip Semiconductor Manufacturing Corporation
- Chen-Liang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor devices
- Patent number 11,430,800
- Issue date Aug 30, 2022
- Samsung Electronics Co., Ltd.
- Sunggil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for single gate non-volatile memory device
- Patent number 11,417,670
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Felix Ying-Kit Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating flash memory
- Patent number 11,387,241
- Issue date Jul 12, 2022
- United Microelectronics Corporation
- Ming-Shing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array and methods used in forming a memory array
- Patent number 11,380,699
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Luan C. Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,367,731
- Issue date Jun 21, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hau-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures with liners
- Patent number 11,355,607
- Issue date Jun 7, 2022
- Micron Technology, Inc.
- Christopher J. Larsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-decks memory device including inter-deck switches
- Patent number 11,289,163
- Issue date Mar 29, 2022
- Micron Technology, Inc.
- Benben Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure
- Patent number 11,257,830
- Issue date Feb 22, 2022
- Powerchip Semiconductor Manufacturing Corporation
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of manufacture thereof
- Patent number 11,251,314
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of erasing semiconductor non-volatile memories
- Patent number 11,201,162
- Issue date Dec 14, 2021
- FlashSilicon Incorporation
- Lee Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Bonded three-dimensional memory devices and methods of making the s...
- Patent number 11,195,857
- Issue date Dec 7, 2021
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays and methods used in forming a memory array
- Patent number 11,177,269
- Issue date Nov 16, 2021
- Micron Technology, Inc.
- Bharat Bhushan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device with dual types of zero cost embedded memory
- Patent number 11,177,393
- Issue date Nov 16, 2021
- Jonker LLC
- David Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly non-volatile memory device, method of manufacturing the...
- Patent number 11,127,749
- Issue date Sep 21, 2021
- KEY FOUNDRY CO., LTD.
- Su Jin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays and methods used in forming a memory array
- Patent number 11,075,215
- Issue date Jul 27, 2021
- Micron Technology, Inc.
- Collin Howder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and programing and reading methods thereof
- Patent number 11,011,533
- Issue date May 18, 2021
- Ememory Technology Inc.
- Chia-Jung Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing eye-shaped contact via s...
- Patent number 10,985,176
- Issue date Apr 20, 2021
- SanDisk Technologies LLC
- Takaaki Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly non-volatile memory device, method of manufacturing the...
- Patent number 10,950,614
- Issue date Mar 16, 2021
- KEY FOUNDRY CO., LTD.
- Su Jin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and manufacturing method thereof
- Patent number 10,896,910
- Issue date Jan 19, 2021
- Powerchip Semiconductor Manufacturing Corporation
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming memory device involving ion implantation of the...
- Patent number 10,896,911
- Issue date Jan 19, 2021
- Winbond Electronics Corp.
- Hsu-Chi Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory structure and array
- Patent number 10,892,266
- Issue date Jan 12, 2021
- Ememory Technology Inc.
- Wein-Town Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Asymmetric Single-Channel Floating Gate Memristor
- Publication number 20240049462
- Publication date Feb 8, 2024
- Tower Semiconductor Ltd.
- Evgeny Pikhay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY, FABRICATION AND CONTROL METHODS THEREOF
- Publication number 20240032291
- Publication date Jan 25, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH THREE-DIMENSIONAL GATE COUPLING AND METHODS OF FO...
- Publication number 20230345718
- Publication date Oct 26, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Wei MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT STRUCTURE AND RELATED MULTI-TIME PROGRAMMABLE (MTP) MEMORY...
- Publication number 20230301087
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230225120
- Publication date Jul 13, 2023
- UNITED MICROELECTRONICS CORP.
- Yu-Jen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM) CELL A...
- Publication number 20230128356
- Publication date Apr 27, 2023
- UNITED MICROELECTRONICS CORP.
- Aaron Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SINGLE POLY NON-VOLATILE MEMORY DEVICE AN...
- Publication number 20220384472
- Publication date Dec 1, 2022
- KEY FOUNDRY CO., LTD.
- Su Jin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Single Gate Non-Volatile Memory Device
- Publication number 20220367494
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Felix Ying-Kit Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20220336483
- Publication date Oct 20, 2022
- Samsung Electronics Co., Ltd.
- Sa Hwan HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220320124
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- HAU-YAN LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DECKS MEMORY DEVICE INCLUDING INTER-DECK SWITCHES
- Publication number 20220284959
- Publication date Sep 8, 2022
- Micron Technology, Inc.
- Benben Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array and Methods Used in Forming a Memory Array
- Publication number 20220278120
- Publication date Sep 1, 2022
- Micron Technology, Inc.
- Luan C. Tran
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES WITH LINERS AND RELATED METHODS
- Publication number 20220278214
- Publication date Sep 1, 2022
- Micron Technologiy, Inc.
- Christopher J. Larsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY SILICIDED NONVOLATILE MEMORY DEVICES AND INTEGRATION SCHEMES
- Publication number 20220149057
- Publication date May 12, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- LANXIANG WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220139938
- Publication date May 5, 2022
- UNITED MICROELECTRONICS CORP.
- Tzu-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING FLASH MEMORY
- Publication number 20220093620
- Publication date Mar 24, 2022
- UNITED MICROELECTRONICS CORPORATION
- Ming-Shing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MEMORY STRUCTURE
- Publication number 20220068878
- Publication date Mar 3, 2022
- Powerchip Semiconductor Manufacturing Corporation
- Chen-Liang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CAPABLE OF IMPROVING ERASE AND PROGRAM EFFICIENCY
- Publication number 20220052064
- Publication date Feb 17, 2022
- EMEMORY TECHNOLOGY INC.
- Chia-Jung Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF ERASING SEMICONDUCTOR NON-VOLATILE MEMORIES
- Publication number 20220052065
- Publication date Feb 17, 2022
- FLASHSILICON INCORPORATION
- Lee WANG
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-FINGER GATE NONVOLATILE MEMORY CELL
- Publication number 20220037343
- Publication date Feb 3, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- LANXIANG WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES
- Publication number 20210375895
- Publication date Dec 2, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- YONGSHUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays And Methods Used In Forming A Memory Array
- Publication number 20210151454
- Publication date May 20, 2021
- Micron Technology, Inc.
- Bharat Bhushan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20210118893
- Publication date Apr 22, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Liang HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DECKS MEMORY DEVICE INCLUDING INTER-DECK SWITCHES
- Publication number 20210118508
- Publication date Apr 22, 2021
- Micron Technology, Inc.
- Benben Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20210104632
- Publication date Apr 8, 2021
- Samsung Electronics Co., Ltd.
- Jae Kyeong JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE
- Publication number 20210091099
- Publication date Mar 25, 2021
- Powerchip Semiconductor Manufacturing Corporation
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE POLY NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE...
- Publication number 20210082938
- Publication date Mar 18, 2021
- KEY FOUNDRY CO., LTD.
- Su Jin KIM
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICES
- Publication number 20210020628
- Publication date Jan 21, 2021
- Samsung Electronics Co., Ltd.
- SEUNGHA OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICES
- Publication number 20200411536
- Publication date Dec 31, 2020
- Samsung Electronics Co., Ltd.
- SUNGGIL KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Devices and Methods of Manufacture Thereof
- Publication number 20200395487
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS

the control gate being a doped region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for converting a floating gate non-volatile memory cell to a...

Memory structure and fabrication method thereof

Semiconductor non-volatile memory devices

Semiconductor memory device

Memory device capable of improving erase and program efficiency

Multi-finger gate nonvolatile memory cell

Three-dimensional memory device with a graphene channel and methods...

Partially silicided nonvolatile memory devices and integration schemes

Hybrid memory structure

Vertical semiconductor devices

Structure and method for single gate non-volatile memory device

Method for fabricating flash memory

Memory array and methods used in forming a memory array

Memory device and method of manufacturing the same

Semiconductor device structures with liners

Multi-decks memory device including inter-deck switches

Memory structure

Memory devices and methods of manufacture thereof

Methods of erasing semiconductor non-volatile memories

Bonded three-dimensional memory devices and methods of making the s...

Memory arrays and methods used in forming a memory array

Semiconductor device with dual types of zero cost embedded memory

Single poly non-volatile memory device, method of manufacturing the...

Memory arrays and methods used in forming a memory array

Memory structure and programing and reading methods thereof

Three-dimensional memory device containing eye-shaped contact via s...

Single poly non-volatile memory device, method of manufacturing the...

Memory structure and manufacturing method thereof

Method for forming memory device involving ion implantation of the...

Nonvolatile memory structure and array

Patents Applicationslast 30 patents

Asymmetric Single-Channel Floating Gate Memristor

NON-VOLATILE MEMORY, FABRICATION AND CONTROL METHODS THEREOF

MEMORY CELLS WITH THREE-DIMENSIONAL GATE COUPLING AND METHODS OF FO...

CIRCUIT STRUCTURE AND RELATED MULTI-TIME PROGRAMMABLE (MTP) MEMORY...

SEMICONDUCTOR MEMORY DEVICE

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM) CELL A...

SEMICONDUCTOR DEVICE WITH SINGLE POLY NON-VOLATILE MEMORY DEVICE AN...

Structure and Method for Single Gate Non-Volatile Memory Device

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MULTI-DECKS MEMORY DEVICE INCLUDING INTER-DECK SWITCHES

Memory Array and Methods Used in Forming a Memory Array

SEMICONDUCTOR DEVICES WITH LINERS AND RELATED METHODS

PARTIALLY SILICIDED NONVOLATILE MEMORY DEVICES AND INTEGRATION SCHEMES

SEMICONDUCTOR MEMORY DEVICE

METHOD FOR FABRICATING FLASH MEMORY

HYBRID MEMORY STRUCTURE

MEMORY DEVICE CAPABLE OF IMPROVING ERASE AND PROGRAM EFFICIENCY

METHODS OF ERASING SEMICONDUCTOR NON-VOLATILE MEMORIES

MULTI-FINGER GATE NONVOLATILE MEMORY CELL

SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES

Memory Arrays And Methods Used In Forming A Memory Array

MEMORY STRUCTURE AND FABRICATION METHOD THEREOF

MULTI-DECKS MEMORY DEVICE INCLUDING INTER-DECK SWITCHES

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

MEMORY STRUCTURE

SINGLE POLY NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICES

VERTICAL SEMICONDUCTOR DEVICES

Memory Devices and Methods of Manufacture Thereof