the final conductor layer next to the insulator being a composite

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28088the final conductor layer next to the insulator being a composite

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Patents Grantslast 30 patents

Information Patent Grant
Increasing source/drain dopant concentration to reduced resistance
- Patent number 12,369,342
- Issue date Jul 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,362,183
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure passivating species drive-in method and structure fo...
- Patent number 12,354,876
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of formation
- Patent number 12,347,689
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gates of transistors having reduced resistivity
- Patent number 12,347,729
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ching Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Titanium-containing diffusion barrier for CMP removal rate enhancem...
- Patent number 12,342,600
- Issue date Jun 24, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Kang Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structures for field effect transistors
- Patent number 12,336,265
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with metal ion capture layer
- Patent number 12,336,256
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Ting Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having work function metal stack
- Patent number 12,334,349
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,336,260
- Issue date Jun 17, 2025
- Samsung Electronics Co., Ltd.
- Eunae Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,328,930
- Issue date Jun 10, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D isolation of a segmentated 3D nanosheet channel region
- Patent number 12,328,919
- Issue date Jun 10, 2025
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number RE50457
- Issue date Jun 10, 2025
- Sony Group Corporation
- Yasushi Tateshita
Information Patent Grant
Semiconductor devices with metal intercalated high-k capping
- Patent number 12,315,730
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving surface of semiconductor device
- Patent number 12,315,720
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Tang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,308,248
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal gate fin electrode structure by etching bac...
- Patent number 12,310,078
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for semiconductor device having gate spacer pr...
- Patent number 12,308,238
- Issue date May 20, 2025
- Parabellum Strategic Opportunities Fund LLC
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack treatment
- Patent number 12,300,549
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with a composite stress layer and reduced fin buck...
- Patent number 12,302,611
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Jen Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,302,596
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of gate stacks comprising a threshold voltage tuning layer
- Patent number 12,295,163
- Issue date May 6, 2025
- ASM IP Holding B.V.
- Fu Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,294,022
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jui-Fen Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having a work function material gradient
- Patent number 12,283,616
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistors and method of forming same
- Patent number 12,283,613
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FETS with non-shared work function metals
- Patent number 12,278,237
- Issue date Apr 15, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer photo etching mask including organic and inorganic mate...
- Patent number 12,272,553
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with a work-function...
- Patent number 12,272,556
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Shiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,266,711
- Issue date Apr 1, 2025
- SK Hynix Inc.
- Beom-Yong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having two N-type devices and two P-type de...
- Patent number 12,256,568
- Issue date Mar 18, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xiaojie Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE STACK TREATMENT
- Publication number 20250241055
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20250241048
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Fen Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET HAVING A WORK FUNCTION MATERIAL GRADIENT
- Publication number 20250221004
- Publication date Jul 3, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TERMINAL METHODS AND STRUCTURES
- Publication number 20250210356
- Publication date Jun 26, 2025
- Zafrullah JAGOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A WORK-FUNCTION...
- Publication number 20250201564
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Shiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER PHOTO ETCHING MASK INCLUDING ORGANIC AND INORGANIC MATE...
- Publication number 20250201556
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH REDUCED LEAKAGE CURRENT AND METHODS OF F...
- Publication number 20250204014
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20250194225
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yao-Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPRESSIVE STRAIN IN STACKED NANOSHEET FIELD EFFECT TRANSISTOR
- Publication number 20250185303
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED WORK FUNCTION METAL LAYER
- Publication number 20250185357
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsiung HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FISH BONE STRUCTURE AND METHODS OF FORMIN...
- Publication number 20250176224
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures For Semiconductor Devices
- Publication number 20250176250
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS
- Publication number 20250176248
- Publication date May 29, 2025
- ASM IP HOLDING B.V.
- Suvi Haukka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250169140
- Publication date May 22, 2025
- UNITED MICROELECTRONICS CORP.
- Chia-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250169155
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRUCTURES INCLUDING VANADIUM BORIDE AND VANADIU...
- Publication number 20250166995
- Publication date May 22, 2025
- ASM IP HOLDING B.V.
- Petro Deminskyi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20250169171
- Publication date May 22, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMI...
- Publication number 20250159970
- Publication date May 15, 2025
- Samsung Electronics Co., Ltd.
- Juyoun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250142943
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250133777
- Publication date Apr 24, 2025
- NANYA TECHNOLOGY CORPORATION
- Yen-Wei YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FINFET DEVICES WITH A FIN TOP HARDMASK
- Publication number 20250133808
- Publication date Apr 24, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR EL...
- Publication number 20250133807
- Publication date Apr 24, 2025
- Toyoda Gosei Co., Ltd.
- Kota YASUNISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DOPED FIN WELL
- Publication number 20250120146
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING PERFORMANCE OF MOS DEVICE
- Publication number 20250107225
- Publication date Mar 27, 2025
- Shanghai Huali Integrated Circuit Corporation
- Huiyun JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gates and Method of Forming
- Publication number 20250098223
- Publication date Mar 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE DEPOSITION IN STACKING TRANSISTORS AND STRUCTURES RE...
- Publication number 20250095997
- Publication date Mar 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR I/O AND LOGIC SEMICONDUCTOR DEVICES HAVING DIFFERENT WOR...
- Publication number 20250098275
- Publication date Mar 20, 2025
- Intel Corporation
- ROMAN W. OLAC-VAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING A MOLYBDENUM NITRIDE FILM ON A SURFACE OF A...
- Publication number 20250092513
- Publication date Mar 20, 2025
- ASM IP HOLDING B.V.
- Eric Christopher Stevens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250098270
- Publication date Mar 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Che CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS

the final conductor layer next to the insulator being a composite

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Increasing source/drain dopant concentration to reduced resistance

Semiconductor device and method for fabricating the same

Gate structure passivating species drive-in method and structure fo...

Semiconductor device and methods of formation

Metal gates of transistors having reduced resistivity

Titanium-containing diffusion barrier for CMP removal rate enhancem...

Metal gate structures for field effect transistors

Semiconductor structure with metal ion capture layer

Semiconductor device having work function metal stack

Semiconductor device and method of manufacturing the same

Gate structures for semiconductor devices

3D isolation of a segmentated 3D nanosheet channel region

Semiconductor device and semiconductor device manufacturing method

Semiconductor devices with metal intercalated high-k capping

Method for improving surface of semiconductor device

Semiconductor device and method of manufacture

Method of forming metal gate fin electrode structure by etching bac...

Method and structure for semiconductor device having gate spacer pr...

Gate stack treatment

FinFET structure with a composite stress layer and reduced fin buck...

Fin field-effect transistor and method of forming the same

Formation of gate stacks comprising a threshold voltage tuning layer

Semiconductor device and method of manufacturing the same

FinFET having a work function material gradient

Gate structures in transistors and method of forming same

Stacked FETS with non-shared work function metals

Multi-layer photo etching mask including organic and inorganic mate...

Method of manufacturing a semiconductor device with a work-function...

Semiconductor device and method for fabricating the same

Semiconductor structure having two N-type devices and two P-type de...

Patents Applicationslast 30 patents

GATE STACK TREATMENT

METHOD OF FORMING SEMICONDUCTOR DEVICE

FINFET HAVING A WORK FUNCTION MATERIAL GRADIENT

GATE TERMINAL METHODS AND STRUCTURES

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A WORK-FUNCTION...

MULTI-LAYER PHOTO ETCHING MASK INCLUDING ORGANIC AND INORGANIC MATE...

SEMICONDUCTOR DEVICES WITH REDUCED LEAKAGE CURRENT AND METHODS OF F...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

COMPRESSIVE STRAIN IN STACKED NANOSHEET FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE HAVING DOPED WORK FUNCTION METAL LAYER

SEMICONDUCTOR DEVICE WITH FISH BONE STRUCTURE AND METHODS OF FORMIN...

Gate Structures For Semiconductor Devices

TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

METHODS OF FORMING STRUCTURES INCLUDING VANADIUM BORIDE AND VANADIU...

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMI...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR FORMING FINFET DEVICES WITH A FIN TOP HARDMASK

SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR EL...

SEMICONDUCTOR DEVICE HAVING A DOPED FIN WELL

METHOD FOR IMPROVING PERFORMANCE OF MOS DEVICE

Transistor Gates and Method of Forming

GATE ELECTRODE DEPOSITION IN STACKING TRANSISTORS AND STRUCTURES RE...

NON-PLANAR I/O AND LOGIC SEMICONDUCTOR DEVICES HAVING DIFFERENT WOR...

METHODS FOR DEPOSITING A MOLYBDENUM NITRIDE FILM ON A SURFACE OF A...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME