the final conductor layer next to the insulator being silicon

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28035the final conductor layer next to the insulator being silicon

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Patents Grantslast 30 patents

Information Patent Grant
Methods of forming circuit-protection devices
- Patent number 12,015,026
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing the same
- Patent number 11,996,458
- Issue date May 28, 2024
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RFSOI semiconductor structures including a nitrogen-doped charge-tr...
- Patent number 11,984,477
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam-filling of metal gates with Si-containing layers
- Patent number 11,948,981
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory with improved fill-in window
- Patent number 11,943,921
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate electrode with multi-layers and el...
- Patent number 11,937,431
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device including a doped gate electrode
- Patent number 11,908,916
- Issue date Feb 20, 2024
- SK HYNIX SYSTEM IC INC.
- Soon Yeol Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, memory device, and method for forming transis...
- Patent number 11,910,610
- Issue date Feb 20, 2024
- Kioxia Corporation
- Tatsuya Hosoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method
- Patent number 11,901,185
- Issue date Feb 13, 2024
- Kabushiki Kaisha Toshiba
- Mitsuo Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with temperature sensing component
- Patent number 11,869,762
- Issue date Jan 9, 2024
- Alpha Power Solutions Limited
- Wai Tien Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor devices
- Patent number 11,800,701
- Issue date Oct 24, 2023
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays
- Patent number RE49715
- Issue date Oct 24, 2023
- Micron Technology, Inc.
- Martin C. Roberts
Information Patent Grant
Method of reducing voids and seams in trench structures by forming...
- Patent number 11,742,208
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Damien Thomas Gilmore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method therefor
- Patent number 11,715,639
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Chun Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1T1R resistive random access memory, and manufacturing method there...
- Patent number 11,706,932
- Issue date Jul 18, 2023
- Shenzhen Goodix Technology Co., Ltd.
- Guofeng Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 11,683,930
- Issue date Jun 20, 2023
- NANYA TECHNOLOGY CORPORATION
- Da-Zen Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including polysilicon structures and method of...
- Patent number 11,676,856
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- J. J. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same including...
- Patent number 11,670,511
- Issue date Jun 6, 2023
- SK Hynix Inc.
- Seon-Haeng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 11,664,375
- Issue date May 30, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device involving the use of stre...
- Patent number 11,610,821
- Issue date Mar 21, 2023
- United Semiconductor (Xiamen) Co., Ltd.
- Rui Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a MOSFET
- Patent number 11,545,561
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode integrated into superjunction power MOSFETs
- Patent number 11,538,933
- Issue date Dec 27, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method of manufacturing the same
- Patent number 11,495,609
- Issue date Nov 8, 2022
- STMicroelectronics (Crolles 2) SAS
- Fausto Piazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory with improved fill-in window
- Patent number 11,488,971
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fluorine in the interface regions betwe...
- Patent number 11,462,625
- Issue date Oct 4, 2022
- Asahi Kasel Microdevices Corporation
- Shuntaro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with asymmetric source and drain regions
- Patent number 11,450,769
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Hsien-Yuan Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with integrated memory devices and MOS devices...
- Patent number 11,444,095
- Issue date Sep 13, 2022
- United Microelectronics Corp.
- Wang Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor devices
- Patent number 11,430,794
- Issue date Aug 30, 2022
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, semiconductor constructions, and methods of forming se...
- Patent number 11,424,256
- Issue date Aug 23, 2022
- Micron Technology, Inc.
- Deepak Thimmegowda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RFSOI semiconductor structures including a nitrogen-doped charge-tr...
- Patent number 11,362,176
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS
- Publication number 20240387647
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20240379828
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Taeyoung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240363362
- Publication date Oct 31, 2024
- United Semiconductor (Xiamen) Co., Ltd.
- Wind Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...
- Publication number 20240304697
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER
- Publication number 20240304696
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING SHIELDED GATE SEMICONDUCTOR DEVICE STRUCTURE,...
- Publication number 20240274683
- Publication date Aug 15, 2024
- WILL SEMICONDUCTOR (SHANGHAI) CO. LTD.
- Shuangshen LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...
- Publication number 20240274659
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING OF AN ELECTRONIC POWER COMPONENT
- Publication number 20240266423
- Publication date Aug 8, 2024
- STMicroelectronics International N.V.
- Benjamin MORILLON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR COMPLEMENTARY MOSFET STRUCTURE TO REDUCE LEAKAGES AND PLANAR...
- Publication number 20240213348
- Publication date Jun 27, 2024
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240170548
- Publication date May 23, 2024
- RENESAS ELECTRONICS CORPORATION
- Hiroya SHIMOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20240055426
- Publication date Feb 15, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION STRUCTURE
- Publication number 20240030339
- Publication date Jan 25, 2024
- Siliconix Incorporated
- AYMAN SHIBIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Seam-Filling of Metal Gates with Si-Containing Layers
- Publication number 20240021680
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING...
- Publication number 20230420258
- Publication date Dec 28, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Damien Thomas Gilmore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABR...
- Publication number 20230360932
- Publication date Nov 9, 2023
- Samsung Electronics Co., Ltd.
- Dohyung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCTURES AND METHOD OF...
- Publication number 20230298935
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- J. J. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230268180
- Publication date Aug 24, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiangyu WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SONOS MEMORY AND METHOD OF MAKING THE SAME
- Publication number 20230269945
- Publication date Aug 24, 2023
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Ning WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for selective etching Si in the presence of silicon nitride,...
- Publication number 20230151274
- Publication date May 18, 2023
- CJ Technology Co., Ltd.
- Tzung Chi Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS
- Publication number 20230045954
- Publication date Feb 16, 2023
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Seam-Filling of Metal Gates With Si-Containing Layers
- Publication number 20230014471
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20220406665
- Publication date Dec 22, 2022
- United Semiconductor (Xiamen) Co., Ltd.
- RUI JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MEMORY WITH IMPROVED FILL-IN WINDOW
- Publication number 20220367498
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20220359533
- Publication date Nov 10, 2022
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...
- Publication number 20220320277
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD
- Publication number 20220301877
- Publication date Sep 22, 2022
- Kabushiki Kaisha Toshiba
- Mitsuo SANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TEMPERATURE SENSING COMPONENT
- Publication number 20220115289
- Publication date Apr 14, 2022
- Alpha Power Solutions Limited
- Wai Tien Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20220115384
- Publication date Apr 14, 2022
- SAMSUNG ELECTRONICS CO,. LTD.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MEMORY DEVICE, AND METHOD FOR FORMING TRANSIS...
- Publication number 20220093628
- Publication date Mar 24, 2022
- KIOXIA Corporation
- Tatsuya HOSODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND ELECTRONIC SYSTEM IN...
- Publication number 20220085047
- Publication date Mar 17, 2022
- Samsung Electronics Co., Ltd.
- Sanghoon LEE
- H01 - BASIC ELECTRIC ELEMENTS

the final conductor layer next to the insulator being silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of forming circuit-protection devices

Trench-gate MOS transistor and method for manufacturing the same

RFSOI semiconductor structures including a nitrogen-doped charge-tr...

Seam-filling of metal gates with Si-containing layers

Embedded memory with improved fill-in window

Semiconductor device having gate electrode with multi-layers and el...

High voltage semiconductor device including a doped gate electrode

Semiconductor device, memory device, and method for forming transis...

Etching method

Semiconductor device with temperature sensing component

Method for fabricating semiconductor devices

Memory arrays

Method of reducing voids and seams in trench structures by forming...

Semiconductor device and fabrication method therefor

1T1R resistive random access memory, and manufacturing method there...

Method of fabricating semiconductor device

Semiconductor device including polysilicon structures and method of...

Semiconductor device and method for fabricating the same including...

Minimizing shorting between FinFET epitaxial regions

Method for forming a semiconductor device involving the use of stre...

Methods for manufacturing a MOSFET

Schottky diode integrated into superjunction power MOSFETs

Integrated circuit and method of manufacturing the same

Embedded memory with improved fill-in window

Semiconductor device having fluorine in the interface regions betwe...

Transistor with asymmetric source and drain regions

Semiconductor device with integrated memory devices and MOS devices...

Method for fabricating semiconductor devices

Transistors, semiconductor constructions, and methods of forming se...

RFSOI semiconductor structures including a nitrogen-doped charge-tr...

Patents Applicationslast 30 patents

SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...

SEMICONDUCTOR DEVICE WITH CAPPING LAYER

METHOD FOR PREPARING SHIELDED GATE SEMICONDUCTOR DEVICE STRUCTURE,...

RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...

FORMING OF AN ELECTRONIC POWER COMPONENT

PLANAR COMPLEMENTARY MOSFET STRUCTURE TO REDUCE LEAKAGES AND PLANAR...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

TERMINATION STRUCTURE

Seam-Filling of Metal Gates with Si-Containing Layers

METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING...

METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABR...

SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCTURES AND METHOD OF...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

EMBEDDED SONOS MEMORY AND METHOD OF MAKING THE SAME

Method for selective etching Si in the presence of silicon nitride,...

SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS

Seam-Filling of Metal Gates With Si-Containing Layers

METHOD FOR FORMING A SEMICONDUCTOR DEVICE

EMBEDDED MEMORY WITH IMPROVED FILL-IN WINDOW

METHOD FOR FABRICATING SEMICONDUCTOR DEVICES

RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...

ETCHING METHOD

SEMICONDUCTOR DEVICE WITH TEMPERATURE SENSING COMPONENT

METHOD FOR FABRICATING SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE, MEMORY DEVICE, AND METHOD FOR FORMING TRANSIS...

SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND ELECTRONIC SYSTEM IN...