the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28105the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step

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Patents Grantslast 30 patents

Information Patent Grant
Metal gate modulation to improve kink effect
- Patent number 11,532,621
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,508,848
- Issue date Nov 22, 2022
- Semiconductor Manufacturing International (Beijing) Corporation
- Meng Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigation of time dependent dielectric breakdown
- Patent number 11,398,559
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jyun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with asymmetric gate structure and method
- Patent number 11,342,453
- Issue date May 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure
- Patent number 11,145,747
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,145,729
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate modulation to improve kink effect
- Patent number 11,063,044
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate modulation to improve kink effect
- Patent number 10,998,315
- Issue date May 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOFSET and method of fabricating same
- Patent number 10,971,595
- Issue date Apr 6, 2021
- Nexchip Seminconductor Corporation
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MOSFET
- Patent number 10,957,776
- Issue date Mar 23, 2021
- NEXCHIP SEMICONDUCTOR CORPORATION
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cover member for a robot used in a painting process having absorpti...
- Patent number 10,943,985
- Issue date Mar 9, 2021
- TD Industrial Coverings, Inc.
- Mark D'Andreta
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,861,976
- Issue date Dec 8, 2020
- Semiconductor Manufacturing (Beijing) International Corporation
- Meng Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate modulation to improve kink effect
- Patent number 10,741,555
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective polysilicon doping for gate induced drain leakage improve...
- Patent number 10,680,019
- Issue date Jun 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device including nano-wire selecto...
- Patent number 10,680,118
- Issue date Jun 9, 2020
- SK Hynix Inc.
- Dong Yean Oh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Mitigation of time dependent dielectric breakdown
- Patent number 10,658,486
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacutring Co., Ltd.
- Yi-Jyun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,658,478
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor device and method for manufacturing the...
- Patent number 10,629,726
- Issue date Apr 21, 2020
- Vanguard International Semiconductor Corporation
- Chung-Ren Lao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, protection circuit, and method of manufacturing transistor
- Patent number 10,522,357
- Issue date Dec 31, 2019
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Katsuhiko Fukasaku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate modulation to improve kink effect
- Patent number 10,468,410
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and fabrication methods thereof
- Patent number 10,411,118
- Issue date Sep 10, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making silicon carbide semiconductor device
- Patent number 10,366,893
- Issue date Jul 30, 2019
- Fuji Electric Co., Ltd.
- Setsuko Wakimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective polysilicon doping for gate induced drain leakage improve...
- Patent number 10,276,596
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with buried P+ and source contact
- Patent number 10,147,801
- Issue date Dec 4, 2018
- Volterra Semiconductor LLC
- Marco A. Zuniga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device including nano-wire selecto...
- Patent number 10,121,902
- Issue date Nov 6, 2018
- SK Hynix Inc.
- Dong Yean Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with multiple threshold voltages
- Patent number 10,020,230
- Issue date Jul 10, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chin Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits devices with counter-doped conductive gates
- Patent number 9,991,356
- Issue date Jun 5, 2018
- NXP USA, INC.
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a PMOS transistor comprising a dual work fu...
- Patent number 9,985,105
- Issue date May 29, 2018
- Nanya Technology Corporation
- Shin-Yu Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for pre-deposition treatment of a work-function metal layer
- Patent number 9,978,601
- Issue date May 22, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen Tsai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
N-type MOSFET and method for manufacturing the same
- Patent number 9,934,975
- Issue date Apr 3, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR PRE-DEPOSITION TREATMENT OF A WORK-FUNCTION METAL LAYER
- Publication number 20230106314
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen TSAI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MITIGATION OF TIME DEPENDENT DIELECTRIC BREAKDOWN
- Publication number 20220352341
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jyun HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE MODULATION TO IMPROVE KINK EFFECT
- Publication number 20210313325
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210083093
- Publication date Mar 18, 2021
- Semiconductor Manufacturing International (Beijing) Corporation
- Meng ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE MODULATION TO IMPROVE KINK EFFECT
- Publication number 20200321337
- Publication date Oct 8, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE MODULATION TO IMPROVE KINK EFFECT
- Publication number 20200295001
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING MOSFET
- Publication number 20200287016
- Publication date Sep 10, 2020
- Nexchip Semiconductor Corporation
- Geeng-Chuan CHERN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200243658
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF TIME DEPENDENT DIELECTRIC BREAKDOWN
- Publication number 20200243663
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing, Co., Ltd.
- Yi-Jyun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOFSET AND METHOD OF FABRICATING SAME
- Publication number 20200127108
- Publication date Apr 23, 2020
- Nexchip Semiconductor Corporation
- Geeng-Chuan CHERN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200105922
- Publication date Apr 2, 2020
- Semiconductor Manufacturing International (Beijing) Corporation
- Meng ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE MODULATION TO IMPROVE KINK EFFECT
- Publication number 20200013778
- Publication date Jan 9, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE POLYSILICON DOPING FOR GATE INDUCED DRAIN LEAKAGE IMPROVE...
- Publication number 20190237485
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE MODULATION TO IMPROVE KINK EFFECT
- Publication number 20190148375
- Publication date May 16, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20190123175
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yun HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING NANO-WIRE SELECTO...
- Publication number 20190035941
- Publication date Jan 31, 2019
- SK hynix Inc.
- Dong Yean OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF
- Publication number 20180323287
- Publication date Nov 8, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yan LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM FOR PRE-DEPOSITION TREATMENT OF A WORK-FUNCTION METAL LAYER
- Publication number 20180261459
- Publication date Sep 13, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen TSAI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COVER MEMBER FOR A ROBOT USED IN A PAINTING PROCESS HAVING ABSORPT...
- Publication number 20180076298
- Publication date Mar 15, 2018
- TD INDUSTRIAL COVERINGS, INC.
- Mark D'Andreta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING NANO-WIRE SELECTO...
- Publication number 20180061996
- Publication date Mar 1, 2018
- SK HYNIX INC.
- Dong Yean OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR MAKING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20170092500
- Publication date Mar 30, 2017
- Fuji Electric Co., Ltd.
- Setsuko WAKIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH COUNTER-DOPED CONDUCTIVE GATES
- Publication number 20160365422
- Publication date Dec 15, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED CAPACITOR
- Publication number 20160064471
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STACK STRUCTURE AND MANUFACTURING METHOD
- Publication number 20150364563
- Publication date Dec 17, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE
- Publication number 20150206755
- Publication date Jul 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150008537
- Publication date Jan 8, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Gate LDMOS Device
- Publication number 20140374826
- Publication date Dec 25, 2014
- Marco A. Zuniga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs with Multiple Threshold Voltages
- Publication number 20140377944
- Publication date Dec 25, 2014
- Po-Chin Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20140264640
- Publication date Sep 18, 2014
- NANYA Technology Corp.
- Shin-Yu Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATES OF SEMICONDUCTOR DEVICES
- Publication number 20140235047
- Publication date Aug 21, 2014
- Samsung Electronics Co., Ltd.
- JONG-WON LEE
- H01 - BASIC ELECTRIC ELEMENTS

the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Metal gate modulation to improve kink effect

Semiconductor device and method for manufacturing the same

Mitigation of time dependent dielectric breakdown

Field effect transistor with asymmetric gate structure and method

FinFET structure

Semiconductor device

Metal gate modulation to improve kink effect

Metal gate modulation to improve kink effect

MOFSET and method of fabricating same

Method of fabricating MOSFET

Cover member for a robot used in a painting process having absorpti...

Semiconductor device and method for manufacturing the same

Metal gate modulation to improve kink effect

Selective polysilicon doping for gate induced drain leakage improve...

Semiconductor integrated circuit device including nano-wire selecto...

Mitigation of time dependent dielectric breakdown

Semiconductor device

High-voltage semiconductor device and method for manufacturing the...

Transistor, protection circuit, and method of manufacturing transistor

Metal gate modulation to improve kink effect

Semiconductor structures and fabrication methods thereof

Process for making silicon carbide semiconductor device

Selective polysilicon doping for gate induced drain leakage improve...

Transistor with buried P+ and source contact

Semiconductor integrated circuit device including nano-wire selecto...

FinFETs with multiple threshold voltages

Integrated circuits devices with counter-doped conductive gates

Method of manufacturing a PMOS transistor comprising a dual work fu...

Methods for pre-deposition treatment of a work-function metal layer

N-type MOSFET and method for manufacturing the same

Patents Applicationslast 30 patents

METHODS FOR PRE-DEPOSITION TREATMENT OF A WORK-FUNCTION METAL LAYER

MITIGATION OF TIME DEPENDENT DIELECTRIC BREAKDOWN

METAL GATE MODULATION TO IMPROVE KINK EFFECT

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METAL GATE MODULATION TO IMPROVE KINK EFFECT

METAL GATE MODULATION TO IMPROVE KINK EFFECT

METHOD OF FABRICATING MOSFET

SEMICONDUCTOR DEVICE

MITIGATION OF TIME DEPENDENT DIELECTRIC BREAKDOWN

MOFSET AND METHOD OF FABRICATING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METAL GATE MODULATION TO IMPROVE KINK EFFECT

SELECTIVE POLYSILICON DOPING FOR GATE INDUCED DRAIN LEAKAGE IMPROVE...

METAL GATE MODULATION TO IMPROVE KINK EFFECT

FINFET STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING NANO-WIRE SELECTO...

SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF

SYSTEM FOR PRE-DEPOSITION TREATMENT OF A WORK-FUNCTION METAL LAYER

COVER MEMBER FOR A ROBOT USED IN A PAINTING PROCESS HAVING ABSORPT...

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING NANO-WIRE SELECTO...

PROCESS FOR MAKING SILICON CARBIDE SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICES WITH COUNTER-DOPED CONDUCTIVE GATES

EMBEDDED CAPACITOR

METAL GATE STACK STRUCTURE AND MANUFACTURING METHOD

METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE

N-TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME

Vertical Gate LDMOS Device

FinFETs with Multiple Threshold Voltages

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHODS OF FORMING GATES OF SEMICONDUCTOR DEVICES