the heating element being in contact with, or immersed in, the molten zone

Industry

CPC
C30B13/18

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B13/00Single-crystal growth by zone-melting Refining by zone-melting

Current Industry

C30B13/18the heating element being in contact with, or immersed in, the molten zone

Industries

Patents Grantslast 30 patents

Information Patent Grant
Device for producing a mono-crystalline sheet of semiconductor mate...
- Patent number 10,066,312
- Issue date Sep 4, 2018
- International Business Machines Corporation
- Mikael T. Bjoerk
- C30 - CRYSTAL GROWTH
Information Patent Grant
Zone melting furnace thermal field with dual power heating function...
- Patent number 9,797,062
- Issue date Oct 24, 2017
- ZHEJIANG JINGSHENG M & E CO., LTD
- Jianwei Cao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Producing a mono-crystalline sheet of semiconductor material
- Patent number 9,487,884
- Issue date Nov 8, 2016
- International Business Machines Corporation
- Mikael T. Bjoerk
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for crystal ribbon growth
- Patent number 5,229,083
- Issue date Jul 20, 1993
- Carl E. Bleil
- C30 - CRYSTAL GROWTH
Information Patent Grant
Edge-defined contact heater apparatus and method for floating zone...
- Patent number 5,114,528
- Issue date May 19, 1992
- Wisconsin Alumni Research Foundation
- Sindo Kou
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of crystal ribbon growth
- Patent number 5,055,157
- Issue date Oct 8, 1991
- Carl E. Bleil
- C30 - CRYSTAL GROWTH
Information Patent Grant
Resistor for the treatment of materials
- Patent number 4,906,821
- Issue date Mar 6, 1990
- Commissariat a l'Energie Atomique
- Bernard Bechevet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for tensioning a thin plate
- Patent number 4,608,234
- Issue date Aug 26, 1986
- Commissariat a l'Energie Atomique
- Jean-Jacques Aubert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a pipe-shaped single crystal
- Patent number 4,323,418
- Issue date Apr 6, 1982
- Hitachi, Ltd.
- Toshio Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing ferrite single crystals
- Patent number 4,305,777
- Issue date Dec 15, 1981
- Hitachi, Ltd.
- Toshio Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Corrugated interface zone refiner
- Patent number 4,255,390
- Issue date Mar 10, 1981
- E. I. Du Pont de Nemours and Company
- Philip J. Rennolds
- C30 - CRYSTAL GROWTH
Information Patent Grant
Corrugated interface zone refiner
- Patent number 4,196,042
- Issue date Apr 1, 1980
- E. I. Du Pont de Nemours and Company
- Philip J. Rennolds
- C30 - CRYSTAL GROWTH
Information Patent Grant
Zone melting process
- Patent number 3,960,511
- Issue date Jun 1, 1976
- Preussag Aktiengesellschaft
- Wilhelm H. Kuhlmann-Schafer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Zone melting process
- Patent number 3,935,058
- Issue date Jan 27, 1976
- Preussag Aktiengesellschaft
- Wilhelm H. Kuhlmann-Schafer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing crystals
- Patent number 3,933,572
- Issue date Jan 20, 1976
- The United States of America as represented by the Secretary of the Air Force
- Joseph R. O'Connor
- C30 - CRYSTAL GROWTH
Information Patent Grant
3877880
- Patent number 3,877,880
- Issue date Apr 15, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3505032
- Patent number 3,505,032
- Issue date Apr 7, 1970
- C30 - CRYSTAL GROWTH
Information Patent Grant
3410666
- Patent number 3,410,666
- Issue date Nov 12, 1968
- C30 - CRYSTAL GROWTH
Information Patent Grant
3238024
- Patent number 3,238,024
- Issue date Mar 1, 1966
- C30 - CRYSTAL GROWTH
Information Patent Grant
3172734
- Patent number 3,172,734
- Issue date Mar 9, 1965
- C30 - CRYSTAL GROWTH
Information Patent Grant
2992903
- Patent number 2,992,903
- Issue date Jul 18, 1961
- C30 - CRYSTAL GROWTH
Information Patent Grant
2937216
- Patent number 2,937,216
- Issue date May 17, 1960
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
ZONE MELTING FURNACE THERMAL FIELD WITH DUAL POWER HEATING FUNCTION...
- Publication number 20160115619
- Publication date Apr 28, 2016
- ZHEJIANG JINGSHENG M & E CO., LTD
- Jianwei CAO
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCING A MONO-CRYSTALLINE SHEET
- Publication number 20130058827
- Publication date Mar 7, 2013
- International Business Machines Corporation
- Mikael T. Bjoerk
- C30 - CRYSTAL GROWTH

the heating element being in contact with, or immersed in, the molten zone

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Device for producing a mono-crystalline sheet of semiconductor mate...

Zone melting furnace thermal field with dual power heating function...

Producing a mono-crystalline sheet of semiconductor material

Method and apparatus for crystal ribbon growth

Edge-defined contact heater apparatus and method for floating zone...

Method of crystal ribbon growth

Resistor for the treatment of materials

Device for tensioning a thin plate

Method for growing a pipe-shaped single crystal

Method of producing ferrite single crystals

Corrugated interface zone refiner

Corrugated interface zone refiner

Zone melting process

Zone melting process

Method for growing crystals

3877880

3505032

3410666

3238024

3172734

2992903

2937216

Patents Applicationslast 30 patents

ZONE MELTING FURNACE THERMAL FIELD WITH DUAL POWER HEATING FUNCTION...

PRODUCING A MONO-CRYSTALLINE SHEET