the insulator being formed after the semiconductor body, the semiconductor being silicon

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28017the insulator being formed after the semiconductor body, the semiconductor being silicon

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,136,652
- Issue date Nov 5, 2024
- Sumitomo Electric Industries, Ltd.
- Taku Horii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate cut structure and method of forming...
- Patent number 12,057,341
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing the same
- Patent number 11,996,458
- Issue date May 28, 2024
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 11,843,040
- Issue date Dec 12, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell layouts for MOS-gated devices for improved forward voltage
- Patent number 11,393,901
- Issue date Jul 19, 2022
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Longitudinal silicon ingot slicing apparatus
- Patent number 11,276,577
- Issue date Mar 15, 2022
- Samuel Messinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing
- Patent number 11,251,278
- Issue date Feb 15, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implant isolated devices and method for forming the same
- Patent number 11,114,486
- Issue date Sep 7, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,043,434
- Issue date Jun 22, 2021
- ABLIC INC.
- Hitomi Sakurai
- G01 - MEASURING TESTING
Information Patent Grant
Gate cut with high selectivity to preserve interlevel dielectric layer
- Patent number 10,957,544
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric memory devices including a backside...
- Patent number 10,923,502
- Issue date Feb 16, 2021
- SanDisk Technologies LLC
- Koji Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,872,964
- Issue date Dec 22, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancements to cell layout and fabrication techniques for MOS-gate...
- Patent number 10,797,131
- Issue date Oct 6, 2020
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device having replacement gat...
- Patent number 10,622,461
- Issue date Apr 14, 2020
- United Microelectronics Corp.
- Pai-Chi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut with high selectivity to preserve interlevel dielectric layer
- Patent number 10,586,706
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing threshold voltage variability in stacked nanosheets
- Patent number 10,580,858
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 10,580,708
- Issue date Mar 3, 2020
- ABLIC Inc.
- Hitomi Sakurai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,553,695
- Issue date Feb 4, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of laser irradiation, laser irradiation apparatus, and metho...
- Patent number 10,488,671
- Issue date Nov 26, 2019
- Semiconductor Energy Laboratory Co., Ltd.
- Koichiro Tanaka
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,411,121
- Issue date Sep 10, 2019
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve reliability of replacement gate device
- Patent number 10,361,281
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of minimizing plasma-induced sidewall damage during low K e...
- Patent number 10,347,498
- Issue date Jul 9, 2019
- L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GE...
- Chih-yu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of integrated circuit
- Patent number 10,304,685
- Issue date May 28, 2019
- United Microelectronics Corp.
- Chao-Sheng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming patterns of a semiconductor device
- Patent number 10,224,213
- Issue date Mar 5, 2019
- Samsung Electronics Co., Ltd.
- Kyungmun Byun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photomask and method for manufacturing semiconductor device using t...
- Patent number 10,222,691
- Issue date Mar 5, 2019
- Samsung Electronics Co., Ltd.
- Yang-Nam Kim
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Preventing threshold voltage variability in stacked nanosheets
- Patent number 10,177,226
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming conductive STI liners for FinFETs
- Patent number 10,164,105
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with capping structure and method of forming t...
- Patent number 10,157,990
- Issue date Dec 18, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,147,798
- Issue date Dec 4, 2018
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement
- Patent number 10,056,459
- Issue date Aug 21, 2018
- Nexperia B.V.
- Thomas Igel-Holtzendorff
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE CUT STRUCTURE AND METHOD OF FORMING...
- Publication number 20240363396
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20240072150
- Publication date Feb 29, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONS AND METHODS FOR MARKING HYDROCARBON COMPOSITIONS WITH...
- Publication number 20230326968
- Publication date Oct 12, 2023
- United Color Manufacturing, Inc.
- Haresh DOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20220278507
- Publication date Sep 1, 2022
- Mitsubishi Electric Corporation
- Tsutomu YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Gate Cut Structure and Method of Forming...
- Publication number 20220238370
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220199778
- Publication date Jun 23, 2022
- Sumitomo Electric Industries, Ltd.
- Taku HORII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL LAYOUTS FOR MOS-GATED DEVICES FOR IMPROVED FORWARD VOLTAGE
- Publication number 20210028279
- Publication date Jan 28, 2021
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONGITUDINAL SILICON INGOT SLICING APPARATUS
- Publication number 20200303199
- Publication date Sep 24, 2020
- Samuel Messinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20200152529
- Publication date May 14, 2020
- ABLIC Inc.
- Hitomi SAKURAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20200152758
- Publication date May 14, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENTS TO CELL LAYOUT AND FABRICATION TECHNIQUES FOR MOS-GATE...
- Publication number 20190312106
- Publication date Oct 10, 2019
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20190067439
- Publication date Feb 28, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF INTEGRATED CIRCUIT
- Publication number 20190051530
- Publication date Feb 14, 2019
- UNITED MICROELECTRONICS CORP.
- Chao-Sheng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING THRESHOLD VOLTAGE VARIABILITY IN STACKED NANOSHEETS
- Publication number 20190006462
- Publication date Jan 3, 2019
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT WITH HIGH SELECTIVITY TO PRESERVE INTERLEVEL DIELECTRIC L...
- Publication number 20180315606
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DE...
- Publication number 20180240721
- Publication date Aug 23, 2018
- ABLIC Inc.
- Hitomi SAKURAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MINIMIZING PLASMA-INDUCED SIDEWALL DAMAGE DURING LOW K E...
- Publication number 20180211845
- Publication date Jul 26, 2018
- L'Air Liquide, Societe Anonyme pour I'Etude et I'Exploitation des procedes Ge...
- Chih-yu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...
- Publication number 20180204926
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE
- Publication number 20180197972
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING STRUCTURE AND METHOD OF FORMING T...
- Publication number 20180166545
- Publication date Jun 14, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ming WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING THRESHOLD VOLTAGE VARIABILITY IN STACKED NANOSHEETS
- Publication number 20180122899
- Publication date May 3, 2018
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20180083115
- Publication date Mar 22, 2018
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20180068845
- Publication date Mar 8, 2018
- RENESAS ELECTRONICS CORPORATION
- Takuya HAGIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS AND SYSTEM FOR FABRICATING SELF-ALIGNED CONTACT U...
- Publication number 20170358585
- Publication date Dec 14, 2017
- GLOBALFOUNDRIES INC.
- Kwanyong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMONLY-BODIED FIELD-EFFECT TRANSISTORS
- Publication number 20170316986
- Publication date Nov 2, 2017
- GLOBALFOUNDRIES INC.
- Chengwen Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING PATTERNS OF A SEMICONDUCTOR DEVICE
- Publication number 20170316950
- Publication date Nov 2, 2017
- Samsung Electronics Co., Ltd.
- Kyungmun BYUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implant Isolated Devices and Method for Forming the Same
- Publication number 20170271386
- Publication date Sep 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING T...
- Publication number 20170236707
- Publication date Aug 17, 2017
- Samsung Electronics Co., Ltd.
- Yang-Nam KIM
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...
- Publication number 20170186845
- Publication date Jun 29, 2017
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20170178897
- Publication date Jun 22, 2017
- RENESAS ELECTRONICS CORPORATION
- Takuya HAGIWARA
- H01 - BASIC ELECTRIC ELEMENTS

the insulator being formed after the semiconductor body, the semiconductor being silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device with gate cut structure and method of forming...

Trench-gate MOS transistor and method for manufacturing the same

MIS contact structure with metal oxide conductor

Cell layouts for MOS-gated devices for improved forward voltage

Longitudinal silicon ingot slicing apparatus

Trench-gate MOS transistor and method for manufacturing

Implant isolated devices and method for forming the same

Method of manufacturing a semiconductor device

Gate cut with high selectivity to preserve interlevel dielectric layer

Three-dimensional ferroelectric memory devices including a backside...

MIS contact structure with metal oxide conductor

Enhancements to cell layout and fabrication techniques for MOS-gate...

Manufacturing method of semiconductor device having replacement gat...

Gate cut with high selectivity to preserve interlevel dielectric layer

Preventing threshold voltage variability in stacked nanosheets

Method of manufacturing a semiconductor device and semiconductor de...

MIS contact structure with metal oxide conductor

Method of laser irradiation, laser irradiation apparatus, and metho...

Method of manufacturing semiconductor device

Method to improve reliability of replacement gate device

Methods of minimizing plasma-induced sidewall damage during low K e...

Manufacturing method of integrated circuit

Method for forming patterns of a semiconductor device

Photomask and method for manufacturing semiconductor device using t...

Preventing threshold voltage variability in stacked nanosheets

Forming conductive STI liners for FinFETs

Semiconductor device with capping structure and method of forming t...

MIS contact structure with metal oxide conductor

Semiconductor arrangement

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH GATE CUT STRUCTURE AND METHOD OF FORMING...

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

COMPOSITIONS AND METHODS FOR MARKING HYDROCARBON COMPOSITIONS WITH...

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

Semiconductor Device with Gate Cut Structure and Method of Forming...

SEMICONDUCTOR DEVICE

CELL LAYOUTS FOR MOS-GATED DEVICES FOR IMPROVED FORWARD VOLTAGE

LONGITUDINAL SILICON INGOT SLICING APPARATUS

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

ENHANCEMENTS TO CELL LAYOUT AND FABRICATION TECHNIQUES FOR MOS-GATE...

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

MANUFACTURING METHOD OF INTEGRATED CIRCUIT

PREVENTING THRESHOLD VOLTAGE VARIABILITY IN STACKED NANOSHEETS

GATE CUT WITH HIGH SELECTIVITY TO PRESERVE INTERLEVEL DIELECTRIC L...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DE...

METHODS OF MINIMIZING PLASMA-INDUCED SIDEWALL DAMAGE DURING LOW K E...

TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...

METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE

SEMICONDUCTOR DEVICE WITH CAPPING STRUCTURE AND METHOD OF FORMING T...

PREVENTING THRESHOLD VOLTAGE VARIABILITY IN STACKED NANOSHEETS

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

METHOD, APPARATUS AND SYSTEM FOR FABRICATING SELF-ALIGNED CONTACT U...

COMMONLY-BODIED FIELD-EFFECT TRANSISTORS

METHOD FOR FORMING PATTERNS OF A SEMICONDUCTOR DEVICE

Implant Isolated Devices and Method for Forming the Same

PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING T...

TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE