the insulator being formed after the semiconductor body, the semiconductor belonging to the fourth group and not being elemental silicon

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28255the insulator being formed after the semiconductor body, the semiconductor belonging to the fourth group and not being elemental silicon

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
Semiconductor device and manufacturing method thereof
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
Germanium condensation for replacement metal gate devices with sili...
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Information Patent Grant
Low Schottky barrier contact structure for Ge NMOS
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- Issue date May 26, 2020
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Information Patent Grant
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- H01 - BASIC ELECTRIC ELEMENTS

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- Publication number 20190221483
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- GLOBALFOUNDRIES INC.
- George MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS

the insulator being formed after the semiconductor body, the semiconductor belonging to the fourth group and not being elemental silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method thereof

Semiconductor structure

Self-aligned contacts

Ribbon or wire transistor stack with selective dipole threshold vol...

Semiconductor device and manufacturing method thereof

Source or drain structures with high germanium concentration cappin...

Semiconductor structure

Self-aligned contacts

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Self-aligned contacts

Selector transistor with metal replacement gate wordline

Semiconductor structure

Passivation layer for germanium substrate

Semiconductor device and manufacturing method thereof

Semiconductor device having interfacial layer and high κ dielectric...

Device with pure silicon oxide layer on silicon-germanium layer

Structures and methods for equivalent oxide thickness scaling on si...

Si-passivated GE gate stack

Semiconductor device and manufacturing method thereof

Self-aligned contacts

Formation of pure silicon oxide interfacial layer on silicon-german...

Substrate treatment method for semiconductor device fabrication

Semiconductor device having interfacial layer and high K dielectric...

Method of forming a semiconductor device comprising at least one ge...

Multijunction solar cells on bulk GeSi substrate

Germanium condensation for replacement metal gate devices with sili...

Field-effect transistor comprising germanium and manufacturing meth...

Low Schottky barrier contact structure for Ge NMOS

Self-aligned contacts

Patents Applicationslast 30 patents

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

SILICON CARBIDE DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PLASMA PROCESSING METHOD

SEMICONDUCTOR STRUCTURE

SELF-ALIGNED CONTACTS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABR...

SELF-ALIGNED CONTACTS

SEMICONDUCTOR STRUCTURE

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

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FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...

FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...

SEMICONDUCTOR DEVICE HAVING INTERFACIAL LAYER AND HIGH K DIELECTRIC...

SINGLE WORK FUNCTION ENABLEMENT FOR SILICON NANOWIRE DEVICE