the insulator being formed after the semiconductor body, the semiconductor belonging to the fourth group and not being elemental silicon

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28255the insulator being formed after the semiconductor body, the semiconductor belonging to the fourth group and not being elemental silicon

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
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- Issue date Oct 8, 2024
- Hsien-Wen Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with high germanium concentration cappin...
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- Issue date Jul 2, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
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- Issue date Mar 5, 2024
- Mediatek Inc.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
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- Issue date Jan 30, 2024
- Intel Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
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- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
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- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsien-Wen Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
- Patent number 11,600,524
- Issue date Mar 7, 2023
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector transistor with metal replacement gate wordline
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- Issue date Sep 13, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Dafna Beery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,404,587
- Issue date Aug 2, 2022
- Mediatek Inc.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for germanium substrate
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- Issue date Mar 8, 2022
- Intel Corporation
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
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- Issue date Feb 8, 2022
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having interfacial layer and high κ dielectric...
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- Issue date Feb 1, 2022
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with pure silicon oxide layer on silicon-germanium layer
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- Issue date Jan 4, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for equivalent oxide thickness scaling on si...
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- Issue date Oct 19, 2021
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Information Patent Grant
Si-passivated GE gate stack
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- Issue date Jul 27, 2021
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
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- Issue date Feb 23, 2021
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- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of pure silicon oxide interfacial layer on silicon-german...
- Patent number 10,916,432
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate treatment method for semiconductor device fabrication
- Patent number 10,763,115
- Issue date Sep 1, 2020
- NXP USA, INC.
- Rama I. Hegde
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device having interfacial layer and high K dielectric...
- Patent number 10,714,575
- Issue date Jul 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Sheng Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device comprising at least one ge...
- Patent number 10,714,595
- Issue date Jul 14, 2020
- Imec VZW
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multijunction solar cells on bulk GeSi substrate
- Patent number 10,707,366
- Issue date Jul 7, 2020
- SolAero Technologies Corp.
- John Hart
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Information Patent Grant
Germanium condensation for replacement metal gate devices with sili...
- Patent number 10,686,076
- Issue date Jun 16, 2020
- International Business Machines Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor comprising germanium and manufacturing meth...
- Patent number 10,680,108
- Issue date Jun 9, 2020
- Imec VZW
- Hiroaki Arimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low Schottky barrier contact structure for Ge NMOS
- Patent number 10,665,688
- Issue date May 26, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
- Patent number 10,629,483
- Issue date Apr 21, 2020
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 10,629,735
- Issue date Apr 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
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- Issue date Apr 21, 2020
- United Microelectronics Corp.
- Shih-Hung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having improved Ge channel interfacial layer
- Patent number 10,615,268
- Issue date Apr 7, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating oxides/semiconductor interfaces
- Patent number 10,615,028
- Issue date Apr 7, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Georgios Vellianitis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387684
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- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Wen WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING METHOD
- Publication number 20240194489
- Publication date Jun 13, 2024
- Hitachi High-Tech Corporation
- Yusuke Nakatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240170580
- Publication date May 23, 2024
- MEDIATEK INC.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACTS
- Publication number 20240030067
- Publication date Jan 25, 2024
- Intel Corporation
- Mark T. BOHR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240021698
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Wen WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230369487
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABR...
- Publication number 20230360932
- Publication date Nov 9, 2023
- Samsung Electronics Co., Ltd.
- Dohyung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACTS
- Publication number 20230154793
- Publication date May 18, 2023
- Intel Corporation
- Mark T. BOHR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220336680
- Publication date Oct 20, 2022
- MEDIATEK INC.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20220199620
- Publication date Jun 23, 2022
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220157965
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Wen WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220037505
- Publication date Feb 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Wen WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONCENTRATION CAPPIN...
- Publication number 20210407851
- Publication date Dec 30, 2021
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR TRANSISTOR WITH METAL REPLACEMENT GATE WORDLINE
- Publication number 20210391386
- Publication date Dec 16, 2021
- SPIN (assignment for benefit of creditors), LLC
- Dafna Beery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210343866
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20210135016
- Publication date May 6, 2021
- MEDIATEK INC.
- Cheng-Tien WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACTS
- Publication number 20210134673
- Publication date May 6, 2021
- Intel Corporation
- Mark T. BOHR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING INTERFACIAL LAYER AND HIGH K DIELECTRIC...
- Publication number 20200350415
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- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Sheng CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACTS
- Publication number 20200251387
- Publication date Aug 6, 2020
- Intel Corporation
- Mark T. BOHR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20200203148
- Publication date Jun 25, 2020
- Samsung Electronics Co., Ltd.
- Hui-Jung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Si-Passivated GE Gate Stack
- Publication number 20200203168
- Publication date Jun 25, 2020
- IMEC vzw
- Hiroaki Arimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR GERMANIUM SUBSTRATE
- Publication number 20200168462
- Publication date May 28, 2020
- Patricio E. ROMERO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200098917
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...
- Publication number 20200020539
- Publication date Jan 16, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
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FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...
- Publication number 20190371611
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING INTERFACIAL LAYER AND HIGH K DIELECTRIC...
- Publication number 20190267458
- Publication date Aug 29, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Sheng CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE WORK FUNCTION ENABLEMENT FOR SILICON NANOWIRE DEVICE
- Publication number 20190221483
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- George MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROGENATION AND NITRIDIZATION PROCESSES FOR MODIFYING EFFECTIVE O...
- Publication number 20190172716
- Publication date Jun 6, 2019
- Applied Materials, Inc.
- Houda GRAOUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190140068
- Publication date May 9, 2019
- UNITED MICROELECTRONICS CORP.
- Shih-Hung Tsai
- H01 - BASIC ELECTRIC ELEMENTS

the insulator being formed after the semiconductor body, the semiconductor belonging to the fourth group and not being elemental silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method thereof

Source or drain structures with high germanium concentration cappin...

Semiconductor structure

Self-aligned contacts

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Self-aligned contacts

Selector transistor with metal replacement gate wordline

Semiconductor structure

Passivation layer for germanium substrate

Semiconductor device and manufacturing method thereof

Semiconductor device having interfacial layer and high κ dielectric...

Device with pure silicon oxide layer on silicon-germanium layer

Structures and methods for equivalent oxide thickness scaling on si...

Si-passivated GE gate stack

Semiconductor device and manufacturing method thereof

Self-aligned contacts

Formation of pure silicon oxide interfacial layer on silicon-german...

Substrate treatment method for semiconductor device fabrication

Semiconductor device having interfacial layer and high K dielectric...

Method of forming a semiconductor device comprising at least one ge...

Multijunction solar cells on bulk GeSi substrate

Germanium condensation for replacement metal gate devices with sili...

Field-effect transistor comprising germanium and manufacturing meth...

Low Schottky barrier contact structure for Ge NMOS

Self-aligned contacts

Reacted conductive gate electrodes and methods of making the same

Semiconductor device and method for fabricating the same

FinFET having improved Ge channel interfacial layer

Method for fabricating oxides/semiconductor interfaces

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PLASMA PROCESSING METHOD

SEMICONDUCTOR STRUCTURE

SELF-ALIGNED CONTACTS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABR...

SELF-ALIGNED CONTACTS

SEMICONDUCTOR STRUCTURE

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONCENTRATION CAPPIN...

SELECTOR TRANSISTOR WITH METAL REPLACEMENT GATE WORDLINE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE

SELF-ALIGNED CONTACTS

SEMICONDUCTOR DEVICE HAVING INTERFACIAL LAYER AND HIGH K DIELECTRIC...

SELF-ALIGNED CONTACTS

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Si-Passivated GE Gate Stack

PASSIVATION LAYER FOR GERMANIUM SUBSTRATE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...

FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...

SEMICONDUCTOR DEVICE HAVING INTERFACIAL LAYER AND HIGH K DIELECTRIC...

SINGLE WORK FUNCTION ENABLEMENT FOR SILICON NANOWIRE DEVICE

HYDROGENATION AND NITRIDIZATION PROCESSES FOR MODIFYING EFFECTIVE O...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME