the layer being positioned within the main fill metal

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/76847the layer being positioned within the main fill metal

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Patents Grantslast 30 patents

Information Patent Grant
Conductive contact having barrier layers with different depths
- Patent number 11,929,328
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having a carbon-containing barrier layer
- Patent number 11,908,697
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an interconnect structure
- Patent number 11,901,226
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kuei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt based interconnects and methods of fabrication thereof
- Patent number 11,862,563
- Issue date Jan 2, 2024
- Tahoe Research, LTD.
- Christopher J. Jezewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a transition metal niobium nitride film on a su...
- Patent number 11,810,788
- Issue date Nov 7, 2023
- ASM IP Holding B.V.
- Jerry Peijun Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Conductive feature formation and structure
- Patent number 11,798,843
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu Shih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio gratings fabricated by electrodeposition
- Patent number 11,798,844
- Issue date Oct 24, 2023
- National Technology & Engineering Solutions of Sandia, LLC
- Christian Lew Arrington
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Partial barrier free vias for cobalt-based interconnects and method...
- Patent number 11,776,910
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Ling Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal structures, devices, and methods
- Patent number 11,769,729
- Issue date Sep 26, 2023
- Intel Corporation
- Daniel J. Zierath
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Contact plugs for semiconductor device
- Patent number 11,756,864
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive interconnects
- Patent number 11,742,282
- Issue date Aug 29, 2023
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,728,211
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance and methods of...
- Patent number 11,728,216
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Chiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits (IC's) with electro-migration (EM)—resistant se...
- Patent number 11,557,536
- Issue date Jan 17, 2023
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure
- Patent number 11,532,511
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Gung-Pei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having a carbon-containing barrier layer
- Patent number 11,527,411
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal gapfill
- Patent number 11,355,391
- Issue date Jun 7, 2022
- Applied Materials, Inc.
- Xi Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt based interconnects and methods of fabrication thereof
- Patent number 11,328,993
- Issue date May 10, 2022
- Intel Corporation
- Christopher J. Jezewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure without barrier layer on bottom surface of via
- Patent number 11,322,391
- Issue date May 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tz-Jun Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,309,212
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure
- Patent number 11,309,213
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Hsiang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode-via structure
- Patent number 11,302,630
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Theodorus E. Standaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid conductor integration in power rail
- Patent number 11,302,638
- Issue date Apr 12, 2022
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,296,026
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin diffusion barrier
- Patent number 11,289,423
- Issue date Mar 29, 2022
- Purdue Research Foundation
- Zhihong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with spacers for self aligned vias
- Patent number 11,264,277
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Pokuan Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper contact plugs with barrier layers
- Patent number 11,251,131
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Lin Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal cap by an exchange reaction
- Patent number 11,251,126
- Issue date Feb 15, 2022
- International Business Machines Corporation
- James J. Kelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance and methods of...
- Patent number 11,239,114
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Chiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate dielectric and inhibitor film over...
- Patent number 11,211,465
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COBALT BASED INTERCONNECTS AND METHODS OF FABRICATION THEREOF
- Publication number 20240145391
- Publication date May 2, 2024
- Tahoe Research, Ltd.
- Christopher J. JEZEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE CONTACT HAVING BARRIER LAYERS WITH DIFFERENT DEPTHS
- Publication number 20240079332
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Yang WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SU...
- Publication number 20240030035
- Publication date Jan 25, 2024
- ASM IP HOLDING B.V.
- Jerry Peijun Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20240021501
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE
- Publication number 20230386916
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Chi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Reduced Contact Resistance and Methods of...
- Publication number 20230377965
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuo-Chiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Feature Formation and Structure
- Publication number 20230369109
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu Shih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial Barrier Free Vias for Cobalt-Based Interconnects and Method...
- Publication number 20230361042
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Tsung-Ling Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230352340
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lin-Yu HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE WITH BURIED INTERCONNECT
- Publication number 20230307296
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Having a Carbon-Containing Barrier Layer
- Publication number 20230107176
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INTERCONNECT STRUCTURES AND METHODS OF FABRICATING THE SAME
- Publication number 20230069716
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Jheng-Hong JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20220277994
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure without Barrier Layer on Bottom Surface of Via
- Publication number 20220262675
- Publication date Aug 18, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Tz-Jun Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20220246464
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lin-Yu HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COBALT BASED INTERCONNECTS AND METHODS OF FABRICATION THEREOF
- Publication number 20220238451
- Publication date Jul 28, 2022
- Intel Corporation
- Christopher J. JEZEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE
- Publication number 20220238373
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Chi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN DIFFUSION BARRIER
- Publication number 20220189882
- Publication date Jun 16, 2022
- Purdue Research Foundation
- Zhihong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SPACERS FOR SELF ALIGNED VIAS
- Publication number 20220181207
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Pokuan Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Reduced Contact Resistance and Methods of...
- Publication number 20220157656
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND HIGH RELIABILITY METALLIZATION MODULE
- Publication number 20220108917
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Roey Shaviv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Interconnects
- Publication number 20220044999
- Publication date Feb 10, 2022
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Having a Carbon-Containing Barrier Layer
- Publication number 20210343535
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE-VIA STRUCTURE
- Publication number 20210320060
- Publication date Oct 14, 2021
- International Business Machines Corporation
- Theodorus E. Standaert
- H01 - BASIC ELECTRIC ELEMENTS
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METHOD FOR FORMING AN INTERCONNECT STRUCTURE
- Publication number 20210313227
- Publication date Oct 7, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Wen-Kuei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial Barrier Free Vias for Cobalt-Based Interconnects and Method...
- Publication number 20210257302
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- Taiwan Semiconductor Manufacturing Co., LTD
- Tsung-Ling Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Feature Formation and Structure
- Publication number 20210225701
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu Shih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CONDUCTOR INTEGRATION IN POWER RAIL
- Publication number 20210217699
- Publication date Jul 15, 2021
- QUALCOMM Incorporated
- John Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH ISOLATIO...
- Publication number 20210202732
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- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Huai CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SPACERS FOR SELF ALIGNED VIAS
- Publication number 20210134672
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Pokuan Ho
- H01 - BASIC ELECTRIC ELEMENTS

the layer being positioned within the main fill metal

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Conductive contact having barrier layers with different depths

Interconnect structure having a carbon-containing barrier layer

Method for forming an interconnect structure

Cobalt based interconnects and methods of fabrication thereof

Methods for forming a transition metal niobium nitride film on a su...

Conductive feature formation and structure

High aspect ratio gratings fabricated by electrodeposition

Partial barrier free vias for cobalt-based interconnects and method...

Metal structures, devices, and methods

Contact plugs for semiconductor device

Conductive interconnects

Semiconductor device structure and methods of forming the same

Semiconductor device with reduced contact resistance and methods of...

Integrated circuits (IC's) with electro-migration (EM)—resistant se...

Method for forming semiconductor structure

Interconnect structure having a carbon-containing barrier layer

Method for forming a metal gapfill

Cobalt based interconnects and methods of fabrication thereof

Interconnect structure without barrier layer on bottom surface of via

Semiconductor device structure and methods of forming the same

Method for manufacturing semiconductor structure

Electrode-via structure

Hybrid conductor integration in power rail

Semiconductor device and manufacturing method thereof

Ultra-thin diffusion barrier

Semiconductor device with spacers for self aligned vias

Copper contact plugs with barrier layers

Replacement metal cap by an exchange reaction

Semiconductor device with reduced contact resistance and methods of...

Semiconductor device having gate dielectric and inhibitor film over...

Patents Applicationslast 30 patents

COBALT BASED INTERCONNECTS AND METHODS OF FABRICATION THEREOF

CONDUCTIVE CONTACT HAVING BARRIER LAYERS WITH DIFFERENT DEPTHS

METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SU...

CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

GATE CONTACT STRUCTURE

Semiconductor Device with Reduced Contact Resistance and Methods of...

Conductive Feature Formation and Structure

Partial Barrier Free Vias for Cobalt-Based Interconnects and Method...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

STACKED DEVICE WITH BURIED INTERCONNECT

Interconnect Structure Having a Carbon-Containing Barrier Layer

METAL INTERCONNECT STRUCTURES AND METHODS OF FABRICATING THE SAME

CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

Interconnect Structure without Barrier Layer on Bottom Surface of Via

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

COBALT BASED INTERCONNECTS AND METHODS OF FABRICATION THEREOF

GATE CONTACT STRUCTURE

ULTRA-THIN DIFFUSION BARRIER

SEMICONDUCTOR DEVICE WITH SPACERS FOR SELF ALIGNED VIAS

Semiconductor Device with Reduced Contact Resistance and Methods of...

LOW RESISTANCE AND HIGH RELIABILITY METALLIZATION MODULE

Conductive Interconnects

Interconnect Structure Having a Carbon-Containing Barrier Layer

ELECTRODE-VIA STRUCTURE

METHOD FOR FORMING AN INTERCONNECT STRUCTURE

Partial Barrier Free Vias for Cobalt-Based Interconnects and Method...

Conductive Feature Formation and Structure

HYBRID CONDUCTOR INTEGRATION IN POWER RAIL

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH ISOLATIO...

SEMICONDUCTOR DEVICE WITH SPACERS FOR SELF ALIGNED VIAS