the material containing hafnium

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H01L21/02148

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02148the material containing hafnium

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Selective removal of an etching stop layer for improving overlay sh...
- Patent number 12,211,700
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Hua Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 12,107,015
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device of dielectric layer
- Patent number 12,034,075
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Yun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor Fin cutting process and structures formed thereby
- Patent number 11,990,375
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and its formation method
- Patent number 11,978,624
- Issue date May 7, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jiang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with fin str...
- Patent number 11,688,645
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved overlay shift tolerance
- Patent number 11,664,237
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Hua Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formulation for deposition of silicon doped hafnium oxide as ferroe...
- Patent number 11,631,580
- Issue date Apr 18, 2023
- VERSUM MATERIALS US, LLC
- Xinjian Lei
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Plasma enhanced deposition processes for controlled formation of me...
- Patent number 11,501,965
- Issue date Nov 15, 2022
- ASM IP Holding B.V.
- Lingyun Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin cutting process and structures formed thereby
- Patent number 11,380,593
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,264,473
- Issue date Mar 1, 2022
- Renesas Electronics Corporation
- Toshiya Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,217,605
- Issue date Jan 4, 2022
- Renesas Electronics Corporation
- Shibun Tsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formulation for deposition of silicon doped hafnium oxide as ferroe...
- Patent number 11,193,206
- Issue date Dec 7, 2021
- VERSUM MATERIALS US, LLC
- Xinjian Lei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,133,422
- Issue date Sep 28, 2021
- Renesas Electronics Corporation
- Masao Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing surface roughness
- Patent number 11,118,268
- Issue date Sep 14, 2021
- General Electric Company
- Wusheng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including memory using hafnium and a method of...
- Patent number 11,094,833
- Issue date Aug 17, 2021
- Renesas Electronics Corporation
- Masao Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formulation for deposition of silicon doped hafnium oxide as ferroe...
- Patent number 11,081,337
- Issue date Aug 3, 2021
- VERSUM MATERIALS US, LLC
- Xinjian Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,018,148
- Issue date May 25, 2021
- TOSHIBA MEMORY CORPORATION
- Yuta Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device of dielectric layer
- Patent number 11,018,258
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Yun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 11,011,433
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,068
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of an etching stop layer for improving overlay sh...
- Patent number 10,867,805
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Hua Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor Fin cutting process and structures formed thereby
- Patent number 10,777,466
- Issue date Sep 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a memory and manufacturing method thereof
- Patent number 10,672,916
- Issue date Jun 2, 2020
- Renesas Electronics Corporation
- Masao Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming transistor gates with hafnium oxide layers and...
- Patent number 10,629,496
- Issue date Apr 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface engineering for high capacitance capacitor for liquid cry...
- Patent number 10,381,454
- Issue date Aug 13, 2019
- PATTERSON + SHERIDAN LLP
- Xuena Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of wafer recycling
- Patent number 10,373,818
- Issue date Aug 6, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming dielectric films, new precursors and their use in...
- Patent number 10,217,629
- Issue date Feb 26, 2019
- L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GE...
- Christian Dussarrat
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Doped ferroelectric hafnium oxide film devices
- Patent number 10,153,155
- Issue date Dec 11, 2018
- University of Florida Research Foundation, Incorporated
- Toshikazu Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-modulated Schottky non-volatile memory
- Patent number 10,102,898
- Issue date Oct 16, 2018
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20240363442
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE OF DIELECTRIC LAYER
- Publication number 20240332419
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Yun PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Fin Cutting Process and Structures Formed Thereby
- Publication number 20240282638
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN STRUCTURES
- Publication number 20230282521
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
- Publication number 20230207658
- Publication date Jun 29, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yutong SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20230017648
- Publication date Jan 19, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH FIN STR...
- Publication number 20220406663
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Fin Cutting Process and Structures Formed Thereby
- Publication number 20220328360
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROE...
- Publication number 20220189767
- Publication date Jun 16, 2022
- VERSUM MATERIALS US, LLC
- Xinjian Lei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ITS FORMATION METHOD
- Publication number 20220084818
- Publication date Mar 17, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Jiang CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE OF DIELECTRIC LAYER
- Publication number 20210280710
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Yun PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20210257263
- Publication date Aug 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20210249254
- Publication date Aug 12, 2021
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210111193
- Publication date Apr 15, 2021
- RENESAS ELECTRONICS CORPORATION
- Shibun TSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Fin Cutting Process and Structures Formed Thereby
- Publication number 20200411386
- Publication date Dec 31, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Transistor Gates with Hafnium Oxide Layers and...
- Publication number 20200251390
- Publication date Aug 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20200251599
- Publication date Aug 6, 2020
- RENESAS ELECTRONICS CORPORATION
- Masao INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE OF DIELECTRIC LAYER
- Publication number 20200119184
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Yun PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE INSULATOR FOR A THIN-FILM TRANSISTOR
- Publication number 20200083052
- Publication date Mar 12, 2020
- Applied Materials, Inc.
- Yujia ZHAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
- Publication number 20200027996
- Publication date Jan 23, 2020
- RENESAS ELECTRONICS CORPORATION
- Masao INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Removal of an Etching Stop Layer for Improving Overlay Sh...
- Publication number 20200006083
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien-Hua Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190393317
- Publication date Dec 26, 2019
- RENESAS ELECTRONICS CORPORATION
- Toshiya SAITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF WAFER RECYCLING
- Publication number 20190237321
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE INSULATOR FOR A THIN-FILM TRANSISTOR
- Publication number 20190206691
- Publication date Jul 4, 2019
- Applied Materials, Inc.
- Yujia ZHAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE CUTTING PROCESS AND STRUCTURES FORMED THEREBY
- Publication number 20190164844
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190148562
- Publication date May 16, 2019
- RENESAS ELECTRONICS CORPORATION
- Masao INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantations for Forming Source/Drain Regions of Different Transis...
- Publication number 20190035694
- Publication date Jan 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF ME...
- Publication number 20180350587
- Publication date Dec 6, 2018
- ASM IP HOLDING B.V.
- Lingyun Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroe...
- Publication number 20180269057
- Publication date Sep 20, 2018
- VERSUM MATERIALS US, LLC
- Xinjian Lei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FERROELECTRIC-MODULATED SCHOTTKY NON-VOLATILE MEMORY
- Publication number 20180190338
- Publication date Jul 5, 2018
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS

the material containing hafnium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Selective removal of an etching stop layer for improving overlay sh...

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Device of dielectric layer

Semiconductor Fin cutting process and structures formed thereby

Semiconductor structure and its formation method

Structure and formation method of semiconductor device with fin str...

Semiconductor device having improved overlay shift tolerance

Formulation for deposition of silicon doped hafnium oxide as ferroe...

Plasma enhanced deposition processes for controlled formation of me...

Semiconductor fin cutting process and structures formed thereby

Method for manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

Formulation for deposition of silicon doped hafnium oxide as ferroe...

Method for manufacturing a semiconductor device

Method for reducing surface roughness

Semiconductor device including memory using hafnium and a method of...

Formulation for deposition of silicon doped hafnium oxide as ferroe...

Semiconductor memory device and method for manufacturing same

Device of dielectric layer

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Oxide-nitride-oxide stack having multiple oxynitride layers

Selective removal of an etching stop layer for improving overlay sh...

Semiconductor Fin cutting process and structures formed thereby

Semiconductor device having a memory and manufacturing method thereof

Methods for forming transistor gates with hafnium oxide layers and...

Interface engineering for high capacitance capacitor for liquid cry...

Method of wafer recycling

Method of forming dielectric films, new precursors and their use in...

Doped ferroelectric hafnium oxide film devices

Ferroelectric-modulated Schottky non-volatile memory

Patents Applicationslast 30 patents

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

DEVICE OF DIELECTRIC LAYER

Semiconductor Fin Cutting Process and Structures Formed Thereby

SEMICONDUCTOR DEVICE WITH FIN STRUCTURES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH FIN STR...

Semiconductor Fin Cutting Process and Structures Formed Thereby

FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROE...

SEMICONDUCTOR STRUCTURE AND ITS FORMATION METHOD

DEVICE OF DIELECTRIC LAYER

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor Fin Cutting Process and Structures Formed Thereby

Methods for Forming Transistor Gates with Hafnium Oxide Layers and...

SEMICONDUCTOR DEVICE HAVING A MEMORY AND MANUFACTURING METHOD THEREOF

DEVICE OF DIELECTRIC LAYER

HIGH-K GATE INSULATOR FOR A THIN-FILM TRANSISTOR

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME

Selective Removal of an Etching Stop Layer for Improving Overlay Sh...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF WAFER RECYCLING

HIGH-K GATE INSULATOR FOR A THIN-FILM TRANSISTOR

SEMICONDUCTOR STRUCTURE CUTTING PROCESS AND STRUCTURES FORMED THEREBY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Implantations for Forming Source/Drain Regions of Different Transis...

PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF ME...

Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroe...

FERROELECTRIC-MODULATED SCHOTTKY NON-VOLATILE MEMORY