the molten zone not extending over the whole cross-section

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CPC
C30B13/06

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B13/00Single-crystal growth by zone-melting Refining by zone-melting

Current Industry

C30B13/06the molten zone not extending over the whole cross-section

Industries

Patents Grantslast 30 patents

Information Patent Grant
Additively manufactured single-crystal metallic components, and met...
- Patent number 11,865,641
- Issue date Jan 9, 2024
- HRL Laboratories, LLC
- John H. Martin
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Method for purifying a thallium compound using a carbon powder
- Patent number 11,725,303
- Issue date Aug 15, 2023
- Northwestern University
- Mercouri G. Kanatzidis
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Crystallization of two-dimensional structures comprising multiple t...
- Patent number 11,621,163
- Issue date Apr 4, 2023
- The Regents of the University of California
- Nobuhiko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for purifying an inorganic material using a tube having a be...
- Patent number 11,060,206
- Issue date Jul 13, 2021
- Northwestern University
- Mercouri G. Kanatzidis
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Control of solidification in laser powder bed fusion additive manuf...
- Patent number 11,020,955
- Issue date Jun 1, 2021
- General Electric Company
- William Thomas Carter
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Control of solidification in laser powder bed fusion additive manuf...
- Patent number 10,532,556
- Issue date Jan 14, 2020
- General Electric Company
- William Thomas Carter
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Additive manufacturing system utilizing an epitaxy process and meth...
- Patent number 10,012,088
- Issue date Jul 3, 2018
- United Technologies Corporation
- Thomas N. Slavens
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Solid state formation of sapphire using a localized energy source
- Patent number 5,427,051
- Issue date Jun 27, 1995
- General Electric Company
- Randolph E. Maxwell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for recrystallization of thin strip material
- Patent number 4,934,446
- Issue date Jun 19, 1990
- Olin Corporation
- Joseph Winter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral epitaxial growth by seeded solidification
- Patent number 4,670,088
- Issue date Jun 2, 1987
- Massachusetts Institute of Technology
- Bor-Yeu Tsaur
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for reducing temperature variations across a semiconductor w...
- Patent number 4,560,420
- Issue date Dec 24, 1985
- AT&T Technologies, Inc.
- Herbert A. Lord
- C30 - CRYSTAL GROWTH
Information Patent Grant
Anode and cathode connections for the practice of electromigration
- Patent number 4,549,912
- Issue date Oct 29, 1985
- General Electric Company
- Thomas R. Anthony
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for restructuring thin strip semi-conductor material
- Patent number 4,410,392
- Issue date Oct 18, 1983
- Olin Corporation
- Joseph Winter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making anode and cathode connections for electromigration
- Patent number 4,381,598
- Issue date May 3, 1983
- General Electric Company
- Thomas R. Anthony
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral epitaxial growth by seeded solidification
- Patent number 4,371,421
- Issue date Feb 1, 1983
- Massachusetts Institute of Technology
- John C. C. Fan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for recrystallization of thin strip material
- Patent number 4,356,861
- Issue date Nov 2, 1982
- Olin Corporation
- Joseph Winter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Photo-induced temperature gradient zone melting
- Patent number 4,257,824
- Issue date Mar 24, 1981
- Bell Telephone Laboratories, Incorporated
- Kenneth A. Jackson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Spontaneous growth of large crystal semiconductor material by contr...
- Patent number 4,199,397
- Issue date Apr 22, 1980
- Motorola, Inc.
- Richard W. Gurtler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth-orientation of crystals by raster scanning electron beam
- Patent number 4,187,126
- Issue date Feb 5, 1980
- Conoco, Inc.
- Fred J. Radd
- C30 - CRYSTAL GROWTH
Information Patent Grant
Migration of fine liquid wires by thermal gradient zone melting thr...
- Patent number 4,160,679
- Issue date Jul 10, 1979
- General Electric Company
- Douglas E. Houston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Droplet migration doping using reactive carriers and dopants
- Patent number 4,159,215
- Issue date Jun 26, 1979
- General Electric Company
- Mike F. Chang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Straight, uniform thermalmigration of fine lines
- Patent number 4,159,213
- Issue date Jun 26, 1979
- General Electric Company
- Douglas E. Houston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deep diode devices
- Patent number 4,157,564
- Issue date Jun 5, 1979
- General Electric Company
- Thomas R. Anthony
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing large-size, self-supporting plates of silicon
- Patent number 4,131,659
- Issue date Dec 26, 1978
- Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Bernhard Authier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing phosophorous-doped silicon monocrystals havin...
- Patent number 4,126,509
- Issue date Nov 21, 1978
- Siemens Aktiengesellschaft
- Wolfgang Keller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing large-size substrate-based semiconductor mate...
- Patent number 4,113,532
- Issue date Sep 12, 1978
- Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Bernhard Authier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device manufacture
- Patent number 4,108,685
- Issue date Aug 22, 1978
- General Electric Company
- Mike F. Chang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heating apparatus for temperature gradient zone melting
- Patent number 4,041,278
- Issue date Aug 9, 1977
- General Electric Company
- John K. Boah
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device manufacture
- Patent number 4,040,868
- Issue date Aug 9, 1977
- General Electric Company
- Mike F. Chang
- C30 - CRYSTAL GROWTH
Information Patent Grant
High aspect ratio P-N junctions by the thermal gradient zone meltin...
- Patent number 4,030,116
- Issue date Jun 14, 1977
- General Electric Company
- Samuel M. Blumenfeld
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
ADDITIVELY MANUFACTURED SINGLE-CRYSTAL METALLIC COMPONENTS, AND MET...
- Publication number 20230364714
- Publication date Nov 16, 2023
- HRL LABORATORIES, LLC
- John H. MARTIN
- B22 - CASTING POWDER METALLURGY
Information Patent Application
METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER
- Publication number 20230287596
- Publication date Sep 14, 2023
- Northwestern University
- Mercouri G. Kanatzidis
- C01 - INORGANIC CHEMISTRY
Information Patent Application
CRYSTALLIZATION OF TWO-DIMENSIONAL STRUCTURES COMPRISING MULTIPLE T...
- Publication number 20220316086
- Publication date Oct 6, 2022
- The Regents of the University of California
- Nobuhiko Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PURIFYING AN INORGANIC MATERIAL USING A TUBE HAVING A BE...
- Publication number 20220033993
- Publication date Feb 3, 2022
- Northwestern University
- Mercouri G. Kanatzidis
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROL OF SOLIDIFICATION IN LASER POWDER BED FUSION ADDITIVE MANUF...
- Publication number 20200180297
- Publication date Jun 11, 2020
- GENERAL ELECTRIC COMPANY
- William Thomas CARTER
- B22 - CASTING POWDER METALLURGY
Information Patent Application
METHODS FOR THE SYNTHESIS, PURIFICATION AND CRYSTAL GROWTH OF INORG...
- Publication number 20190177878
- Publication date Jun 13, 2019
- Northwestern University
- Mercouri G. Kanatzidis
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD FOR SINGLE CRYSTAL GROWTH WITH ADDITIVE MANUFACTU...
- Publication number 20170145586
- Publication date May 25, 2017
- Hobart Brothers Company
- Zhigang Xiao
- C30 - CRYSTAL GROWTH
Information Patent Application
AN ADDITIVE MANUFACTURING SYSTEM UTILIZING AN EPITAXY PROCESS AND M...
- Publication number 20160326880
- Publication date Nov 10, 2016
- United Technologies Corporation
- Thomas N. Slavens
- C30 - CRYSTAL GROWTH

the molten zone not extending over the whole cross-section

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Additively manufactured single-crystal metallic components, and met...

Method for purifying a thallium compound using a carbon powder

Crystallization of two-dimensional structures comprising multiple t...

Method for purifying an inorganic material using a tube having a be...

Control of solidification in laser powder bed fusion additive manuf...

Control of solidification in laser powder bed fusion additive manuf...

Additive manufacturing system utilizing an epitaxy process and meth...

Solid state formation of sapphire using a localized energy source

Apparatus for recrystallization of thin strip material

Lateral epitaxial growth by seeded solidification

Method for reducing temperature variations across a semiconductor w...

Anode and cathode connections for the practice of electromigration

Process for restructuring thin strip semi-conductor material

Method of making anode and cathode connections for electromigration

Lateral epitaxial growth by seeded solidification

Process for recrystallization of thin strip material

Photo-induced temperature gradient zone melting

Spontaneous growth of large crystal semiconductor material by contr...

Growth-orientation of crystals by raster scanning electron beam

Migration of fine liquid wires by thermal gradient zone melting thr...

Droplet migration doping using reactive carriers and dopants

Straight, uniform thermalmigration of fine lines

Deep diode devices

Process for producing large-size, self-supporting plates of silicon

Process for producing phosophorous-doped silicon monocrystals havin...

Process for producing large-size substrate-based semiconductor mate...

Semiconductor device manufacture

Heating apparatus for temperature gradient zone melting

Semiconductor device manufacture

High aspect ratio P-N junctions by the thermal gradient zone meltin...

Patents Applicationslast 30 patents

ADDITIVELY MANUFACTURED SINGLE-CRYSTAL METALLIC COMPONENTS, AND MET...

METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER

CRYSTALLIZATION OF TWO-DIMENSIONAL STRUCTURES COMPRISING MULTIPLE T...

METHOD FOR PURIFYING AN INORGANIC MATERIAL USING A TUBE HAVING A BE...

CONTROL OF SOLIDIFICATION IN LASER POWDER BED FUSION ADDITIVE MANUF...

METHODS FOR THE SYNTHESIS, PURIFICATION AND CRYSTAL GROWTH OF INORG...

SYSTEM AND METHOD FOR SINGLE CRYSTAL GROWTH WITH ADDITIVE MANUFACTU...

AN ADDITIVE MANUFACTURING SYSTEM UTILIZING AN EPITAXY PROCESS AND M...