the recessed region having a shape other than rectangular

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/7621the recessed region having a shape other than rectangular

Industries

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing of cavities
- Patent number 11,901,216
- Issue date Feb 13, 2024
- STMicroelectronics (Crolles 2) SAS
- Pascal Gouraud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,710,788
- Issue date Jul 25, 2023
- Samsung Electronics Co., Ltd.
- Kyujin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with partially embedded insulation region a...
- Patent number 11,469,136
- Issue date Oct 11, 2022
- STMicroelectronics S.r.l.
- Simone Dario Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 11,456,354
- Issue date Sep 27, 2022
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with at least a portion of gate electrode encl...
- Patent number 11,195,950
- Issue date Dec 7, 2021
- Samsung Electronics Co., Ltd.
- Kyujin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing of cavities
- Patent number 11,171,034
- Issue date Nov 9, 2021
- STMicroelectronics (Crolles 2) SAS
- Pascal Gouraud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming bulk FinFET with uniform channel h...
- Patent number 11,017,999
- Issue date May 25, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with partially embedded insulation region
- Patent number 10,796,942
- Issue date Oct 6, 2020
- STMicroelectronics S.r.l.
- Simone Dario Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure and manufacturing method thereof for high-volta...
- Patent number 10,770,340
- Issue date Sep 8, 2020
- Hangzhou Silan Integrated Circuit Co., Ltd.
- Yongxiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,741,541
- Issue date Aug 11, 2020
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Footing removal for nitride spacer
- Patent number 10,629,473
- Issue date Apr 21, 2020
- Applied Materials, Inc.
- Jungmin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation structure and methods of manufacturing thereof
- Patent number 10,607,881
- Issue date Mar 31, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ke Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus with channel stop doped devices
- Patent number 10,483,171
- Issue date Nov 19, 2019
- Synopsys, Inc.
- Victor Moroz
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device
- Patent number 10,411,088
- Issue date Sep 10, 2019
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with localized carrier lifetime reduction and...
- Patent number 10,381,259
- Issue date Aug 13, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Alex Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 10,374,035
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 10,312,323
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming alignment marks and structure of same
- Patent number 10,074,612
- Issue date Sep 11, 2018
- Taiwan Semiconductor Manufacturing Company
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET device fabrication
- Patent number 10,032,680
- Issue date Jul 24, 2018
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolated body portion
- Patent number 10,026,829
- Issue date Jul 17, 2018
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 9,972,678
- Issue date May 15, 2018
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus with channel stop doped devices
- Patent number 9,917,018
- Issue date Mar 13, 2018
- Synopsys, Inc.
- Victor Moroz
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Strained FinFET device fabrication
- Patent number 9,917,019
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk finFET with partial dielectric isolation featuring a punch-thr...
- Patent number 9,842,897
- Issue date Dec 12, 2017
- GLOBALFOUNDRIES Inc.
- Murat K. Akarvardar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure and manufacturing method thereof for high-volta...
- Patent number 9,824,913
- Issue date Nov 21, 2017
- Hangzhou Silan Integrated Circuit Co., Ltd.
- Yongxiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET device fabrication
- Patent number 9,805,992
- Issue date Oct 31, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET device fabrication
- Patent number 9,805,991
- Issue date Oct 31, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage and well implantation method for semiconductor de...
- Patent number 9,780,002
- Issue date Oct 3, 2017
- GLOBALFOUNDRIES Inc.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V epitaxial layers
- Patent number 9,748,331
- Issue date Aug 29, 2017
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized carrier lifetime reduction
- Patent number 9,698,044
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alex Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DONOR SUBSTRATE FOR THE TRANSFER OF A THIN LAYER AND ASSOCIATED TRA...
- Publication number 20240030061
- Publication date Jan 25, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Larry Vincent
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk Nanosheet with Dielectric Isolation
- Publication number 20230197781
- Publication date Jun 22, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230126794
- Publication date Apr 27, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Chih-Cheng LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220223464
- Publication date Jul 14, 2022
- RICHTEK TECHNOLOGY CORPORATION
- Kun-Huang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIVERSAL ELECTRICALLY INACTIVE DEVICES FOR INTEGRATED CIRCUIT PACK...
- Publication number 20220165625
- Publication date May 26, 2022
- Intel Corporation
- Xavier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20220093796
- Publication date Mar 24, 2022
- Samsung Electronics Co., Ltd.
- Kyujin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING OF CAVITIES
- Publication number 20220028725
- Publication date Jan 27, 2022
- STMicroelectronics (Crolles 2) SAS
- Pascal GOURAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20210005506
- Publication date Jan 7, 2021
- Samsung Electronics Co., Ltd.
- Kyujin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INSULATION BY OXIDE REGION MADE FROM POROUS SILICON
- Publication number 20200395240
- Publication date Dec 17, 2020
- STMicroelectronics S.r.l.
- Simone Dario MARIANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING OF CAVITIES
- Publication number 20200203211
- Publication date Jun 25, 2020
- STMicroelectronics (Crolles 2) SAS
- Pascal GOURAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Strucure with Partially Embedded Insulation Region
- Publication number 20200058540
- Publication date Feb 20, 2020
- STMicroelectronics S.r.l.
- Simone Dario MARIANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk Nanosheet with Dielectric Isolation
- Publication number 20190312104
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION STRUCTURE AND METHODS OF MANUFACTURING THEREOF
- Publication number 20190109039
- Publication date Apr 11, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ke DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180233556
- Publication date Aug 16, 2018
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus with Channel Stop Doped Devices
- Publication number 20180226301
- Publication date Aug 9, 2018
- Synopsys, Inc.
- VICTOR MOROZ
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20180102408
- Publication date Apr 12, 2018
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20180096985
- Publication date Apr 5, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FOOTING REMOVAL FOR NITRIDE SPACER
- Publication number 20180076083
- Publication date Mar 15, 2018
- Applied Materials, Inc.
- Jungmin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREOF FOR HIGH-VOLTA...
- Publication number 20180033676
- Publication date Feb 1, 2018
- HANGZHOU SILAN INTEGRATED CIRCUIT CO., LTD
- Yongxiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOCALIZED CARRIER LIFETIME REDUCTION AND...
- Publication number 20170271199
- Publication date Sep 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alex KALNITSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Alignment Marks and Structure of Same
- Publication number 20170207176
- Publication date Jul 20, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION
- Publication number 20170162676
- Publication date Jun 8, 2017
- Intel Corporation
- Annalisa CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS
- Publication number 20170062593
- Publication date Mar 2, 2017
- Pushkar Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FINFET DEVICE FABRICATION
- Publication number 20170053838
- Publication date Feb 23, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FINFET WITH PARTIAL DIELECTRIC ISOLATION FEATURING A PUNCH-THR...
- Publication number 20160284802
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES INC.
- Murat K. Akarvardar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FIN ISOLATION REGIONS ON FINFET SEMICONDUCTOR DE...
- Publication number 20160225659
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SILICON OXIDE LAYER HAVING A TOP SURFA...
- Publication number 20160141359
- Publication date May 19, 2016
- UNITED MICROELECTRONICS CORP.
- Ching-Chung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Growing III-V Epitaxial Layers
- Publication number 20160099309
- Publication date Apr 7, 2016
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20160013094
- Publication date Jan 14, 2016
- SK HYNIX INC.
- Kyung Kyu MIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE WITH DISCRETE FIELD O...
- Publication number 20150295069
- Publication date Oct 15, 2015
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Jian Xu
- H01 - BASIC ELECTRIC ELEMENTS

the recessed region having a shape other than rectangular

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing of cavities

Semiconductor device and method of fabricating the same

Semiconductor structure with partially embedded insulation region a...

Bulk nanosheet with dielectric isolation

Semiconductor device with at least a portion of gate electrode encl...

Manufacturing of cavities

Method and structure for forming bulk FinFET with uniform channel h...

Semiconductor structure with partially embedded insulation region

Isolation structure and manufacturing method thereof for high-volta...

Method of manufacturing a semiconductor device

Footing removal for nitride spacer

Device isolation structure and methods of manufacturing thereof

Method and apparatus with channel stop doped devices

Semiconductor device

Semiconductor device with localized carrier lifetime reduction and...

Bulk nanosheet with dielectric isolation

Bulk nanosheet with dielectric isolation

Method for forming alignment marks and structure of same

Strained finFET device fabrication

Semiconductor device with isolated body portion

Semiconductor device and method of forming the same

Method and apparatus with channel stop doped devices

Strained FinFET device fabrication

Bulk finFET with partial dielectric isolation featuring a punch-thr...

Isolation structure and manufacturing method thereof for high-volta...

Strained finFET device fabrication

Strained finFET device fabrication

Threshold voltage and well implantation method for semiconductor de...

Method for growing III-V epitaxial layers

Localized carrier lifetime reduction

Patents Applicationslast 30 patents

DONOR SUBSTRATE FOR THE TRANSFER OF A THIN LAYER AND ASSOCIATED TRA...

Bulk Nanosheet with Dielectric Isolation

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF

UNIVERSAL ELECTRICALLY INACTIVE DEVICES FOR INTEGRATED CIRCUIT PACK...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

MANUFACTURING OF CAVITIES

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

LOCAL INSULATION BY OXIDE REGION MADE FROM POROUS SILICON

MANUFACTURING OF CAVITIES

Semiconductor Strucure with Partially Embedded Insulation Region

Bulk Nanosheet with Dielectric Isolation

DEVICE ISOLATION STRUCTURE AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE

Method and Apparatus with Channel Stop Doped Devices

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Method of Manufacturing a Semiconductor Device

FOOTING REMOVAL FOR NITRIDE SPACER

ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREOF FOR HIGH-VOLTA...

SEMICONDUCTOR DEVICE WITH LOCALIZED CARRIER LIFETIME REDUCTION AND...

Method for Forming Alignment Marks and Structure of Same

SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION

ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS

STRAINED FINFET DEVICE FABRICATION

BULK FINFET WITH PARTIAL DIELECTRIC ISOLATION FEATURING A PUNCH-THR...

METHODS OF FORMING FIN ISOLATION REGIONS ON FINFET SEMICONDUCTOR DE...

SEMICONDUCTOR STRUCTURE WITH SILICON OXIDE LAYER HAVING A TOP SURFA...

Method for Growing III-V Epitaxial Layers

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE WITH DISCRETE FIELD O...