the storage electrode having multiple wings

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CPC
H01L27/10817

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/10817the storage electrode having multiple wings

Industries

Patents Grantslast 30 patents

Information Patent Grant
4F2 DRAM cell using vertical thin film transistor
- Patent number 11,653,487
- Issue date May 16, 2023
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including storage node electrode including ste...
- Patent number 11,610,891
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Jaehwan Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,538,900
- Issue date Dec 27, 2022
- Winbond Electronics Corp.
- Hiroyuki Takaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies comprising stud-type capacitors
- Patent number 11,417,661
- Issue date Aug 16, 2022
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with lateral protrusion structure
- Patent number 11,374,000
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ru-Liang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,342,333
- Issue date May 24, 2022
- NANYA TECHNOLOGY CORPORATION
- Shing-Yih Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including storage node electrode including ste...
- Patent number 11,322,499
- Issue date May 3, 2022
- Samsung Electronics Co., Ltd.
- Jaehwan Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D dram structure with high mobility channel
- Patent number 11,295,786
- Issue date Apr 5, 2022
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stack capacitor structure and method for forming the same
- Patent number 11,264,389
- Issue date Mar 1, 2022
- NANYA TECHNOLOGY CORPORATION
- Szu-Yao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,245,019
- Issue date Feb 8, 2022
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Woo-Song Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated memory assemblies comprising multiple memory array decks
- Patent number 11,232,828
- Issue date Jan 25, 2022
- Micron Technology, Inc.
- Scott J. Derner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,233,058
- Issue date Jan 25, 2022
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Chang-Hyeon Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies comprising sense-amplifier-circuitry and word...
- Patent number 11,227,861
- Issue date Jan 18, 2022
- Micron Technology, Inc.
- Hiroki Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory employing self-aligned top-gated thin film transistors
- Patent number 11,222,895
- Issue date Jan 11, 2022
- Intel Corporation
- Yih Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming an array of capacitors, methods of forming an ar...
- Patent number 11,201,207
- Issue date Dec 14, 2021
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arrays of capacitors, methods used in forming integrated circuitry,...
- Patent number 11,195,838
- Issue date Dec 7, 2021
- Micron Technology, Inc.
- Scott L. Light
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including work function adjusting layer...
- Patent number 11,189,618
- Issue date Nov 30, 2021
- Samsung Electronics Co., Ltd.
- Namho Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,164,874
- Issue date Nov 2, 2021
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Chang-Hyeon Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including work function adjusting layer...
- Patent number 11,152,365
- Issue date Oct 19, 2021
- Samsung Electronics Co., Ltd.
- Namho Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit device including a lower el...
- Patent number 11,152,369
- Issue date Oct 19, 2021
- Samsung Electronics Co., Ltd.
- Hui-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor capacitor structure
- Patent number 10,985,163
- Issue date Apr 20, 2021
- NANYA TECHNOLOGY CORPORATION
- Chung-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell
- Patent number 10,971,497
- Issue date Apr 6, 2021
- United Microelectronics Corp.
- Hong-Ru Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,964,703
- Issue date Mar 30, 2021
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Chang-Hyeon Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies comprising sense-amplifier-circuitry and word...
- Patent number 10,957,681
- Issue date Mar 23, 2021
- Micron Technology, Inc.
- Hiroki Fujisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated memory assemblies comprising multiple memory array decks
- Patent number 10,943,642
- Issue date Mar 9, 2021
- Micron Technology, Inc.
- Scott J. Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a memory device
- Patent number 10,923,479
- Issue date Feb 16, 2021
- Winbond Electronics Corp.
- Huang-Nan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 10,825,893
- Issue date Nov 3, 2020
- Samsung Electronics Co., Ltd.
- Kyu-ho Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 10,777,560
- Issue date Sep 15, 2020
- Samsung Electronics Co., Ltd.
- Jonghyuk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 10,756,092
- Issue date Aug 25, 2020
- Samsung Electronics Co., Ltd.
- Jonghyuk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an array of capacitors, methods of forming an ar...
- Patent number 10,748,987
- Issue date Aug 18, 2020
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY
- Publication number 20240064965
- Publication date Feb 22, 2024
- NANYA TECHNOLOGY CORPORATION
- Chiang-Lin SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR
- Publication number 20230231004
- Publication date Jul 20, 2023
- Samsung Electronics Co., Ltd.
- Byunghoon NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230200055
- Publication date Jun 22, 2023
- Samsung Electronics Co., Ltd.
- Yonghwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230133977
- Publication date May 4, 2023
- Samsung Electronics Co., Ltd.
- Se-Ho YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING STORAGE NODE ELECTRODE INCLUDING STE...
- Publication number 20220246621
- Publication date Aug 4, 2022
- Samsung Electronics Co., Ltd.
- Jaehwan CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE HAVING BACKEND DOUBLE-WALLED CAPACITORS
- Publication number 20220199760
- Publication date Jun 23, 2022
- Intel Corporation
- Abhishek A. SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MEMORY EMPLOYING SELF-ALIGNED TOP-GATED THIN FILM TRANSISTORS
- Publication number 20220122983
- Publication date Apr 21, 2022
- Intel Corporation
- Yih Wang
- G11 - INFORMATION STORAGE
Information Patent Application
3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL
- Publication number 20220108728
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Chang Seok Kang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220102354
- Publication date Mar 31, 2022
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- CHANG-HYEON NAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Arrays Of Capacitors, Methods Used In Forming Integrated Circuitry,...
- Publication number 20220059536
- Publication date Feb 24, 2022
- Micron Technology, Inc.
- Scott L. Light
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACK CAPACITOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210384196
- Publication date Dec 9, 2021
- NANYA TECHNOLOGY CORPORATION
- Szu-Yao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARCHITECTURE WITH SHARED BITLINE AT BACK-END-OF-LINE
- Publication number 20210305255
- Publication date Sep 30, 2021
- Intel Corporation
- Juan G. ALZATE VINASCO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE...
- Publication number 20210296430
- Publication date Sep 23, 2021
- Micron Technology, Inc.
- Akira Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210217867
- Publication date Jul 15, 2021
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- WOO-SONG AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING STORAGE NODE ELECTRODE INCLUDING STE...
- Publication number 20210202490
- Publication date Jul 1, 2021
- Samsung Electronics Co., Ltd.
- Jaehwan CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Memory Assemblies Comprising Multiple Memory Array Decks
- Publication number 20210183428
- Publication date Jun 17, 2021
- Micron Technology, Inc.
- Scott J. Derner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Comprising Sense-Amplifier-Circuitry and Word...
- Publication number 20210143142
- Publication date May 13, 2021
- Micron Technology, Inc.
- Hiroki Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210098461
- Publication date Apr 1, 2021
- NANYA TECHNOLOGY CORPORATION
- SHING-YIH SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Comprising Sense-Amplifier-Circuitry and Word...
- Publication number 20210066272
- Publication date Mar 4, 2021
- Micron Technology, Inc.
- Hiroki Fujisawa
- G11 - INFORMATION STORAGE
Information Patent Application
Methods Of Forming An Array Of Capacitors, Methods Of Forming An Ar...
- Publication number 20200395437
- Publication date Dec 17, 2020
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A MEMORY DEVICE
- Publication number 20200295010
- Publication date Sep 17, 2020
- WINBOND ELECTRONICS CORP.
- Huang-Nan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL
- Publication number 20200251151
- Publication date Aug 6, 2020
- Applied Materials, Inc.
- Chang Seok Kang
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200243532
- Publication date Jul 30, 2020
- Samsung Electronics Co., Ltd.
- Hui-jung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Memory Assemblies Comprising Multiple Memory Array Decks
- Publication number 20200234754
- Publication date Jul 23, 2020
- Micron Technology, Inc.
- Scott J. Derner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20200227419
- Publication date Jul 16, 2020
- Samsung Electronics Co., Ltd.
- Jonghyuk PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200219882
- Publication date Jul 9, 2020
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- CHANG-HYEON NAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200219883
- Publication date Jul 9, 2020
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- CHANG-HYEON NAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20200212047
- Publication date Jul 2, 2020
- Samsung Electronics Co., Ltd.
- Jonghyuk PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Comprising Stud-Type Capacitors
- Publication number 20200203350
- Publication date Jun 25, 2020
- Micron Technology, Inc.
- GURTEJ S. SANDHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200203349
- Publication date Jun 25, 2020
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- CHANG-HYEON NAM
- H01 - BASIC ELECTRIC ELEMENTS

the storage electrode having multiple wings

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

4F2 DRAM cell using vertical thin film transistor

Semiconductor device including storage node electrode including ste...

Semiconductor device and method of fabricating the same

Integrated assemblies comprising stud-type capacitors

Trench capacitor with lateral protrusion structure

Semiconductor device

Semiconductor device including storage node electrode including ste...

3D dram structure with high mobility channel

Stack capacitor structure and method for forming the same

Semiconductor device and method for fabricating the same

Integrated memory assemblies comprising multiple memory array decks

Semiconductor device and method for fabricating the same

Integrated assemblies comprising sense-amplifier-circuitry and word...

Embedded memory employing self-aligned top-gated thin film transistors

Methods of forming an array of capacitors, methods of forming an ar...

Arrays of capacitors, methods used in forming integrated circuitry,...

Semiconductor memory device including work function adjusting layer...

Semiconductor device and method for fabricating the same

Semiconductor memory device including work function adjusting layer...

Method of forming an integrated circuit device including a lower el...

Semiconductor capacitor structure

Memory cell

Semiconductor device and method for fabricating the same

Integrated assemblies comprising sense-amplifier-circuitry and word...

Integrated memory assemblies comprising multiple memory array decks

Method for fabricating a memory device

Semiconductor devices

Semiconductor device and method of fabricating the same

Method of fabricating semiconductor device

Methods of forming an array of capacitors, methods of forming an ar...

Patents Applicationslast 30 patents

DYNAMIC RANDOM ACCESS MEMORY

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE INCLUDING STORAGE NODE ELECTRODE INCLUDING STE...

INTEGRATED CIRCUIT DEVICE HAVING BACKEND DOUBLE-WALLED CAPACITORS

EMBEDDED MEMORY EMPLOYING SELF-ALIGNED TOP-GATED THIN FILM TRANSISTORS

3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Arrays Of Capacitors, Methods Used In Forming Integrated Circuitry,...

STACK CAPACITOR STRUCTURE AND METHOD FOR FORMING THE SAME

MEMORY ARCHITECTURE WITH SHARED BITLINE AT BACK-END-OF-LINE

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE INCLUDING STORAGE NODE ELECTRODE INCLUDING STE...

Integrated Memory Assemblies Comprising Multiple Memory Array Decks

Integrated Assemblies Comprising Sense-Amplifier-Circuitry and Word...

SEMICONDUCTOR DEVICE

Integrated Assemblies Comprising Sense-Amplifier-Circuitry and Word...

Methods Of Forming An Array Of Capacitors, Methods Of Forming An Ar...

METHOD FOR FABRICATING A MEMORY DEVICE

3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL

INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

Integrated Memory Assemblies Comprising Multiple Memory Array Decks

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Integrated Assemblies Comprising Stud-Type Capacitors

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME