Three-dimensional arrangements

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/11514Three-dimensional arrangements

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,706,934
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor deck selection in a memory device
- Patent number 11,659,705
- Issue date May 23, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,653,505
- Issue date May 16, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned etch back for vertical three dimensional (3D) memory
- Patent number 11,641,732
- Issue date May 2, 2023
- Micron Technology, Inc.
- Litao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level ferroelectric memory cell
- Patent number 11,621,269
- Issue date Apr 4, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deck selection layouts in a memory device
- Patent number 11,616,068
- Issue date Mar 28, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistors and memory arrays
- Patent number 11,605,723
- Issue date Mar 14, 2023
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses and methods including ferroelectric memory and for oper...
- Patent number 11,574,668
- Issue date Feb 7, 2023
- Micron Technology, Inc.
- Scott J. Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses, systems, and methods for ferroelectric memory cell ope...
- Patent number 11,545,205
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
3D cross-bar nonvolatile memory
- Patent number 11,532,705
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jean-Pierre Colinge
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High-density low voltage multi-element ferroelectric gain memory bi...
- Patent number 11,521,666
- Issue date Dec 6, 2022
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies comprising ferroelectric transistors and non-...
- Patent number 11,515,331
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated ferroelectric memory cells for memory cell array and methods...
- Patent number 11,515,313
- Issue date Nov 29, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell arrangement and methods thereof
- Patent number 11,508,756
- Issue date Nov 22, 2022
- FERROELECTRIC MEMORY GMBH
- Menno Mennenga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor deck selection in a memory device
- Patent number 11,502,091
- Issue date Nov 15, 2022
- Micron Technology, Inc.
- Daniele Vimercati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density low voltage non-volatile memory with unidirectional pl...
- Patent number 11,482,529
- Issue date Oct 25, 2022
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,482,269
- Issue date Oct 25, 2022
- Kioxia Corporation
- Kunifumi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density low voltage non-volatile memory with unidirectional pl...
- Patent number 11,476,261
- Issue date Oct 18, 2022
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density low voltage non-volatile memory with unidirectional pl...
- Patent number 11,476,260
- Issue date Oct 18, 2022
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies
- Patent number 11,411,118
- Issue date Aug 9, 2022
- Micron Technology, Inc.
- Srinivas Pulugurtha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays comprising vertically-alternating tiers of insulative...
- Patent number 11,411,002
- Issue date Aug 9, 2022
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays
- Patent number 11,404,440
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell arrangement
- Patent number 11,393,832
- Issue date Jul 19, 2022
- FERROELECTRIC MEMORY GMBH
- Menno Mennenga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor deck selection in a memory device
- Patent number 11,393,822
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory
- Patent number 11,387,247
- Issue date Jul 12, 2022
- Kioxia Corporation
- Go Oike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques and devices for canceling memory cell variations
- Patent number 11,380,381
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Yasuko Hattori
- G11 - INFORMATION STORAGE
Information Patent Grant
Plate node configurations and operations for a memory array
- Patent number 11,380,696
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays
- Patent number 11,374,007
- Issue date Jun 28, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses and methods for shielded memory architecture
- Patent number 11,335,644
- Issue date May 17, 2022
- Micron Technology, Inc.
- Ferdinando Bedeschi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory devices with dual dielectric confinement and m...
- Patent number 11,335,790
- Issue date May 17, 2022
- SanDisk Technologies LLC
- Peter Rabkin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...
- Publication number 20240114693
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher M. Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY
- Publication number 20240114696
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY
- Publication number 20240098965
- Publication date Mar 21, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL AND METHODS FOR PROCESSING A MEMORY CAPACITOR
- Publication number 20240032305
- Publication date Jan 25, 2024
- Ferroelectric Memory GmbH
- Alireza KASHIR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE REVEAL FOR LAYERED MULTI-CAPACITOR SINGLE TRANSISTOR MEMOR...
- Publication number 20240008285
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STORAGE ELEMENT SINGLE-TRANSISTOR CROSSPOINT MEMORY SYSTEMS A...
- Publication number 20240008286
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE CAPACITOR MEMORY ARRAYS WITH STACKED ACCESS TRANSISTORS
- Publication number 20240008291
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240008287
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230422514
- Publication date Dec 28, 2023
- SK HYNIX INC.
- Min Chul SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Device
- Publication number 20230309317
- Publication date Sep 28, 2023
- Samsung Electronics Co., Ltd.
- Hyuncheol KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230292531
- Publication date Sep 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230217662
- Publication date Jul 6, 2023
- SK HYNIX INC.
- Byung Woo KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABLE ELECTRODE FOR MEMORY CELLS
- Publication number 20230209834
- Publication date Jun 29, 2023
- Intel Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES TO PERFORM A SENSE OPERATION
- Publication number 20230206978
- Publication date Jun 29, 2023
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...
- Publication number 20230200079
- Publication date Jun 22, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D FERROELECTRIC MEMORY CELL ARCHITECTURES
- Publication number 20230200080
- Publication date Jun 22, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NANORIBBON-BASED HYSTERETIC MEMORY
- Publication number 20230180482
- Publication date Jun 8, 2023
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS IN STAGGERED LAYOUTS
- Publication number 20230133520
- Publication date May 4, 2023
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...
- Publication number 20230134556
- Publication date May 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY STRUCTURE
- Publication number 20230137738
- Publication date May 4, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Shou-Zen Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MANGANESE OR SCANDIUM DOPED FERROELECTRIC DEVICE AND BIT-CELL
- Publication number 20230116235
- Publication date Apr 13, 2023
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Application
THIN FILM TRANSISTOR DECK SELECTION IN A MEMORY DEVICE
- Publication number 20230112259
- Publication date Apr 13, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH NITRIDE-BASED FERROELECTRIC MATERIALS
- Publication number 20230116719
- Publication date Apr 13, 2023
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...
- Publication number 20230101111
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC THREE-DIMENSIONAL MEMORY
- Publication number 20230097641
- Publication date Mar 30, 2023
- Intel Corporation
- Christopher M. NEUMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED FERROELECTRIC MEMORY CELLS FOR MEMORY CELL ARRAY AND METHODS...
- Publication number 20230090306
- Publication date Mar 23, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING PEDESTAL BASED MEMORY DEVICES USING POCKET IN...
- Publication number 20230070073
- Publication date Mar 9, 2023
- Kepler Computing, Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NON-VOLATILE MEMORY, OPERATING METHOD OF THE SAME AND MANUFACTUR...
- Publication number 20230051142
- Publication date Feb 16, 2023
- Korea Advanced Institute of Science and Technology
- Sanghun JEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230048842
- Publication date Feb 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ON-DIE FORMATION OF SINGLE-CRYSTAL SEMICONDUCTOR STRUCTURES
- Publication number 20230042701
- Publication date Feb 9, 2023
- Micron Technology, Inc.
- Jeffery Brandt Hull
- H01 - BASIC ELECTRIC ELEMENTS

Three-dimensional arrangements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Cross-point memory array and related fabrication techniques

Thin film transistor deck selection in a memory device

Cross-point memory array and related fabrication techniques

Self-aligned etch back for vertical three dimensional (3D) memory

Multi-level ferroelectric memory cell

Deck selection layouts in a memory device

Transistors and memory arrays

Apparatuses and methods including ferroelectric memory and for oper...

Apparatuses, systems, and methods for ferroelectric memory cell ope...

3D cross-bar nonvolatile memory

High-density low voltage multi-element ferroelectric gain memory bi...

Integrated assemblies comprising ferroelectric transistors and non-...

Gated ferroelectric memory cells for memory cell array and methods...

Memory cell arrangement and methods thereof

Thin film transistor deck selection in a memory device

High-density low voltage non-volatile memory with unidirectional pl...

Semiconductor memory device

High-density low voltage non-volatile memory with unidirectional pl...

High-density low voltage non-volatile memory with unidirectional pl...

Integrated assemblies

Memory arrays comprising vertically-alternating tiers of insulative...

Memory arrays

Memory cell arrangement

Thin film transistor deck selection in a memory device

Semiconductor memory

Techniques and devices for canceling memory cell variations

Plate node configurations and operations for a memory array

Memory arrays

Apparatuses and methods for shielded memory architecture

Ferroelectric memory devices with dual dielectric confinement and m...

Patents Applicationslast 30 patents

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

MEMORY CELL AND METHODS FOR PROCESSING A MEMORY CAPACITOR

BACKSIDE REVEAL FOR LAYERED MULTI-CAPACITOR SINGLE TRANSISTOR MEMOR...

MULTI-STORAGE ELEMENT SINGLE-TRANSISTOR CROSSPOINT MEMORY SYSTEMS A...

PROGRAMMABLE CAPACITOR MEMORY ARRAYS WITH STACKED ACCESS TRANSISTORS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Semiconductor Memory Device

MEMORY DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

RELIABLE ELECTRODE FOR MEMORY CELLS

TECHNIQUES TO PERFORM A SENSE OPERATION

FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...

3D FERROELECTRIC MEMORY CELL ARCHITECTURES

THREE-DIMENSIONAL NANORIBBON-BASED HYSTERETIC MEMORY

MEMORY DEVICES HAVING VERTICAL TRANSISTORS IN STAGGERED LAYOUTS

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...

FERROELECTRIC MEMORY STRUCTURE

MANGANESE OR SCANDIUM DOPED FERROELECTRIC DEVICE AND BIT-CELL

THIN FILM TRANSISTOR DECK SELECTION IN A MEMORY DEVICE

MEMORY DEVICES WITH NITRIDE-BASED FERROELECTRIC MATERIALS

THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...

FERROELECTRIC THREE-DIMENSIONAL MEMORY

GATED FERROELECTRIC MEMORY CELLS FOR MEMORY CELL ARRAY AND METHODS...

METHOD OF FABRICATING PEDESTAL BASED MEMORY DEVICES USING POCKET IN...

3D NON-VOLATILE MEMORY, OPERATING METHOD OF THE SAME AND MANUFACTUR...

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

ON-DIE FORMATION OF SINGLE-CRYSTAL SEMICONDUCTOR STRUCTURES