Through-implantation

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CPC
H01L21/26553

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/26553Through-implantation

Industries

Patents Grantslast 30 patents

Information Patent Grant
Vertical UMOSFET device with high channel mobility and preparation...
- Patent number 12,087,855
- Issue date Sep 10, 2024
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
- Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for implant and anneal for high voltage field effect transis...
- Patent number 12,068,161
- Issue date Aug 20, 2024
- Power Integrations, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating sub-micron contacts to buried well devices
- Patent number 12,040,366
- Issue date Jul 16, 2024
- The Boeing Company
- Kangmu Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor devices using sacrificial capping...
- Patent number 11,784,236
- Issue date Oct 10, 2023
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor laminate, semiconductor device, method of man...
- Patent number 11,600,704
- Issue date Mar 7, 2023
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor substrate
- Patent number 10,868,124
- Issue date Dec 15, 2020
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Hiroko Iguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including implanting i...
- Patent number 10,636,663
- Issue date Apr 28, 2020
- Toyoda Gosei Co., Ltd.
- Takahiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetector having a tunable junction region doping profile confi...
- Patent number 10,546,971
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory with low leakage current and related m...
- Patent number 10,373,832
- Issue date Aug 6, 2019
- Etron Technology, Inc.
- Li-Ping Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 10,366,891
- Issue date Jul 30, 2019
- Fuji Electric Co., Ltd.
- Shinya Takashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and power co...
- Patent number 10,332,966
- Issue date Jun 25, 2019
- Toyoda Gosei Co., Ltd.
- Takahiro Fujii
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method of manufacturing semiconductor device including an n type se...
- Patent number 10,256,323
- Issue date Apr 9, 2019
- Toyoda Gosei Co., Ltd.
- Nariaki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and semiconductor device
- Patent number 10,217,855
- Issue date Feb 26, 2019
- Nuvoton Technology Corporation
- Chih-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device, and semiconductor device
- Patent number 10,153,356
- Issue date Dec 11, 2018
- Toyoda Gosei Co., Ltd.
- Tohru Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices including implanted re...
- Patent number 9,984,881
- Issue date May 29, 2018
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing the same and power c...
- Patent number 9,905,432
- Issue date Feb 27, 2018
- Toyoda Gosei Co., Ltd.
- Takaki Niwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for performing activation of dopants in a GaN-base semicondu...
- Patent number 9,536,741
- Issue date Jan 3, 2017
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Claire Agraffeil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for performing activation of dopants in a GaN-base semicondu...
- Patent number 9,514,962
- Issue date Dec 6, 2016
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Claire Agraffeil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including implanted regions and protective la...
- Patent number 9,318,594
- Issue date Apr 19, 2016
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 9,111,762
- Issue date Aug 18, 2015
- SK Hynix Inc.
- Myoung Sub Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including implanted regions for providing low...
- Patent number 8,823,057
- Issue date Sep 2, 2014
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor, semiconductor wafer, method for producing...
- Patent number 8,779,471
- Issue date Jul 15, 2014
- Sumitomo Chemical Company, Limited
- Masahiko Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,766,276
- Issue date Jul 1, 2014
- Renesas Electronics Corporation
- Masayasu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating transistors including self-aligned gate elec...
- Patent number 8,105,889
- Issue date Jan 31, 2012
- Cree, Inc.
- R. Peter Smith
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of producing field effect transistor
- Patent number 7,998,848
- Issue date Aug 16, 2011
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including implanted regions and protective la...
- Patent number 7,419,892
- Issue date Sep 2, 2008
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce crystal defects particularly in group III-nitride...
- Patent number 7,341,628
- Issue date Mar 11, 2008
- Andreas A. Melas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an article comprising an oxide layer on a GaAs-bas...
- Patent number 6,495,407
- Issue date Dec 17, 2002
- Agere Systems Inc.
- Minghwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal processing of oxide-compound semiconductor structures
- Patent number 5,902,130
- Issue date May 11, 1999
- Motorola, Inc.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making and using a shallow semiconductor junction
- Patent number 5,384,269
- Issue date Jan 24, 1995
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Implanted Regions for Semiconductor Structures with Deep Buried Layers
- Publication number 20240120202
- Publication date Apr 11, 2024
- Wolfspeed, Inc.
- Scott Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240047213
- Publication date Feb 8, 2024
- DENSO CORPORATION
- TAKASHI OKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GAN-BASED POWER DEVICE AND GANBASED POWER...
- Publication number 20230282481
- Publication date Sep 7, 2023
- Korea Atomic Energy Research Institute
- Dong Seok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL AND LOCALIZATION OF POROSITY IN III-NITRIDES AND METHODS OF...
- Publication number 20230052931
- Publication date Feb 16, 2023
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE ENHANCEMENT MODE DEVICE
- Publication number 20220093779
- Publication date Mar 24, 2022
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES
- Publication number 20220028989
- Publication date Jan 27, 2022
- The Boeing Company
- Kangmu Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LAMINATE, SEMICONDUCTOR DEVICE, METHOD OF MAN...
- Publication number 20200219983
- Publication date Jul 9, 2020
- SCIOCS COMPANY LIMITED
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20190181230
- Publication date Jun 13, 2019
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Hiroko IGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190115215
- Publication date Apr 18, 2019
- Fuji Electric Co., Ltd.
- Shinya TAKASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SP...
- Publication number 20170069742
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEM...
- Publication number 20170069745
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING
- Publication number 20170069744
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION
- Publication number 20170069743
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND POWER C...
- Publication number 20160284563
- Publication date Sep 29, 2016
- Toyoda Gosei Co., Ltd.
- Takaki NIWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED RE...
- Publication number 20140329367
- Publication date Nov 6, 2014
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130126893
- Publication date May 23, 2013
- RENESAS ELECTRONICS CORPORATION
- Masayasu TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING...
- Publication number 20120228673
- Publication date Sep 13, 2012
- Sumitomo Chemical Company
- Masahiko HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING TRANSISTORS INCLUDING SELF-ALIGNED GATE ELEC...
- Publication number 20110018040
- Publication date Jan 27, 2011
- R. Peter Smith
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of producing field effect transistor
- Publication number 20090246924
- Publication date Oct 1, 2009
- Yuki NIIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING IMPLANTED REGIONS AND PROTECTIVE LA...
- Publication number 20080290371
- Publication date Nov 27, 2008
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED RE...
- Publication number 20080121895
- Publication date May 29, 2008
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor modified surface by use of pulsed electron b...
- Publication number 20080087984
- Publication date Apr 17, 2008
- Andreas A. Melas
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor devices including implanted regions and protective la...
- Publication number 20070158683
- Publication date Jul 12, 2007
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to reduce crystal defects particularly in group III-nitride...
- Publication number 20050136627
- Publication date Jun 23, 2005
- Andreas A. Melas
- C30 - CRYSTAL GROWTH

Through-implantation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Vertical UMOSFET device with high channel mobility and preparation...

Method for implant and anneal for high voltage field effect transis...

Fabricating sub-micron contacts to buried well devices

Methods for forming semiconductor devices using sacrificial capping...

Nitride semiconductor laminate, semiconductor device, method of man...

Group III nitride semiconductor substrate

Method of manufacturing semiconductor device including implanting i...

Photodetector having a tunable junction region doping profile confi...

Dynamic random access memory with low leakage current and related m...

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device, method of manufacturing the same and power co...

Method of manufacturing semiconductor device including an n type se...

Semiconductor substrate and semiconductor device

Method of manufacturing semiconductor device, and semiconductor device

Methods of fabricating semiconductor devices including implanted re...

Semiconductor device, method for manufacturing the same and power c...

Method for performing activation of dopants in a GaN-base semicondu...

Method for performing activation of dopants in a GaN-base semicondu...

Semiconductor devices including implanted regions and protective la...

Semiconductor device and method for manufacturing the same

Semiconductor devices including implanted regions for providing low...

Field-effect transistor, semiconductor wafer, method for producing...

Semiconductor device and method of manufacturing semiconductor device

Methods of fabricating transistors including self-aligned gate elec...

Method of producing field effect transistor

Semiconductor devices including implanted regions and protective la...

Method to reduce crystal defects particularly in group III-nitride...

Method of making an article comprising an oxide layer on a GaAs-bas...

Thermal processing of oxide-compound semiconductor structures

Methods for making and using a shallow semiconductor junction

Patents Applicationslast 30 patents

Implanted Regions for Semiconductor Structures with Deep Buried Layers

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING GAN-BASED POWER DEVICE AND GANBASED POWER...

CONTROL AND LOCALIZATION OF POROSITY IN III-NITRIDES AND METHODS OF...

GALLIUM NITRIDE ENHANCEMENT MODE DEVICE

FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES

NITRIDE SEMICONDUCTOR LAMINATE, SEMICONDUCTOR DEVICE, METHOD OF MAN...

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SP...

METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEM...

PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING

PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND POWER C...

METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED RE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING...

METHODS OF FABRICATING TRANSISTORS INCLUDING SELF-ALIGNED GATE ELEC...

Method of producing field effect transistor

SEMICONDUCTOR DEVICES INCLUDING IMPLANTED REGIONS AND PROTECTIVE LA...

METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED RE...

Compound semiconductor modified surface by use of pulsed electron b...

Semiconductor devices including implanted regions and protective la...

Method to reduce crystal defects particularly in group III-nitride...