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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/2256through the applied layer

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Patents Grantslast 30 patents

Information Patent Grant
Method for providing doped silicon using a diffusion barrier layer
- Patent number 12,125,705
- Issue date Oct 22, 2024
- Lam Research Corporation
- Purushottam Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a doped zone of a microelectronic device
- Patent number 11,942,323
- Issue date Mar 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,387,148
- Issue date Jul 12, 2022
- United Microelectronics Corp.
- Li-Wei Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor
- Patent number 11,004,752
- Issue date May 11, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of manufacture
- Patent number 10,978,357
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- I-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming complementary doped semiconductor regions in a s...
- Patent number 10,903,079
- Issue date Jan 26, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and forming method thereof
- Patent number 10,879,354
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chii-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation well doping with solid-state diffusion sources for finFET...
- Patent number 10,854,607
- Issue date Dec 1, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual transport orientation for stacked vertical transport field-eff...
- Patent number 10,833,079
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing differently doped zones in a silicon substrate,...
- Patent number 10,825,945
- Issue date Nov 3, 2020
- Universitat Konstanz
- Sebastian Gloger
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Well and punch through stopper formation using conformal doping
- Patent number 10,804,107
- Issue date Oct 13, 2020
- ELPIS TECHNOLOGIES INC.
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,777,556
- Issue date Sep 15, 2020
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,692,777
- Issue date Jun 23, 2020
- United Microelectronics Corp.
- Li-Wei Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate-induced-drain-leakage current in a transistor by form...
- Patent number 10,665,698
- Issue date May 26, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping with solid-state diffusion sources for finFET architectures
- Patent number 10,643,999
- Issue date May 5, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Well and punch through stopper formation using conformal doping
- Patent number 10,607,838
- Issue date Mar 31, 2020
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for doping semiconductor substrates by means of a co-diffusi...
- Patent number 10,593,552
- Issue date Mar 17, 2020
- Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung E.V.
- Philip Rothhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusing agent composition and method of manufacturing semiconduct...
- Patent number 10,541,138
- Issue date Jan 21, 2020
- Tokyo Ohka Kogyo Co., Ltd.
- Yu Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping with solid-state diffusion sources for finFET architectures
- Patent number 10,340,273
- Issue date Jul 2, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 10,325,818
- Issue date Jun 18, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium fin channel formation
- Patent number 10,319,816
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,312,353
- Issue date Jun 4, 2019
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked vertical NFET and PFET
- Patent number 10,297,513
- Issue date May 21, 2019
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epi semiconductor material on a recessed fin in...
- Patent number 10,290,738
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-blocking IGBT having a reverse-blocking edge termination st...
- Patent number 10,276,708
- Issue date Apr 30, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device comprising a thin s...
- Patent number 10,249,499
- Issue date Apr 2, 2019
- ABB Schweiz AG
- Wolfgang Janisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming FinFET CMOS with dual doped STI re...
- Patent number 10,249,537
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping channels of edge cells to provide uniform programming speed...
- Patent number 10,217,762
- Issue date Feb 26, 2019
- SanDisk Technologies LLC
- Xuehong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,205,005
- Issue date Feb 12, 2019
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductors by diffusion
- Patent number 10,141,189
- Issue date Nov 27, 2018
- ASM IP Holding B.V.
- Harald Profijt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BACK-CONTACT SOLAR CELL, AND PRODUCTION THEREOF
- Publication number 20230335663
- Publication date Oct 19, 2023
- EnPV GmbH
- Erik HOFFMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROVIDING DOPED SILICON
- Publication number 20220165563
- Publication date May 26, 2022
- LAM RESEARCH CORPORATION
- Purushottam KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A DOPED AREA OF A MICROELECTRONIC DEVICE
- Publication number 20220157608
- Publication date May 19, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200273758
- Publication date Aug 27, 2020
- UNITED MICROELECTRONICS CORP.
- Li-Wei Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET...
- Publication number 20200251471
- Publication date Aug 6, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL TRANSPORT ORIENTATION FOR STACKED VERTICAL TRANSPORT FIELD-EFF...
- Publication number 20200212036
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20200176328
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- I-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING GATE-INDUCED-DRAIN-LEAKAGE CURRENT IN A TRANSISTOR BY FORM...
- Publication number 20200127122
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WELL AND PUNCH THROUGH STOPPER FORMATION USING CONFORMAL DOPING
- Publication number 20200066531
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES
- Publication number 20190287973
- Publication date Sep 19, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Complementary Doped Semiconductor Regions in a S...
- Publication number 20190287804
- Publication date Sep 19, 2019
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR
- Publication number 20190259671
- Publication date Aug 22, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190109207
- Publication date Apr 11, 2019
- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190051731
- Publication date Feb 14, 2019
- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSING AGENT COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20190043724
- Publication date Feb 7, 2019
- Tokyo Ohka Kogyo Co., Ltd.
- Yu TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180342426
- Publication date Nov 29, 2018
- UNITED MICROELECTRONICS CORP.
- Li-Wei Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM FIN CHANNEL FORMATION
- Publication number 20180301534
- Publication date Oct 18, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING CHANNELS OF EDGE CELLS TO PROVIDE UNIFORM PROGRAMMING SPEED...
- Publication number 20180294278
- Publication date Oct 11, 2018
- SanDisk Technologies LLC
- Xuehong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A RECESSED FIN IN...
- Publication number 20180294348
- Publication date Oct 11, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WELL AND PUNCH THROUGH STOPPER FORMATION USING CONFORMAL DOPING
- Publication number 20180211838
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOPARTICLE STRUCTURE AND PROCESS FOR MANUFACTURE
- Publication number 20180200785
- Publication date Jul 19, 2018
- International Business Machines Corporation
- Qing Cao
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20180182790
- Publication date Jun 28, 2018
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT INTRODUCTION METHOD AND HEAT TREATMENT METHOD
- Publication number 20180166281
- Publication date Jun 14, 2018
- SCREEN HOLDINGS CO., LTD.
- Kazuhiko Fuse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
- Publication number 20180151670
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chii-Ming WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20180138180
- Publication date May 17, 2018
- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING FINFET CMOS WITH DUAL DOPED STI RE...
- Publication number 20180082904
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Veeraraghavan S. BASKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PUNCHTHROUGH STOP LAYERS FOR FIN-TYPE FIELD-EFFECT TRANSISTORS
- Publication number 20180069005
- Publication date Mar 8, 2018
- GLOBALFOUNDRIES INC.
- Ryan Sporer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse-Blocking IGBT Having a Reverse-Blocking Edge Termination St...
- Publication number 20180033627
- Publication date Feb 1, 2018
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DOPING OF SEMICONDUCTORS
- Publication number 20170365734
- Publication date Dec 21, 2017
- Merck Patent GmbH
- Oliver DOLL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20170301771
- Publication date Oct 19, 2017
- PFC Device Holdings Ltd
- Mei-Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS

through the applied layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for providing doped silicon using a diffusion barrier layer

Method for manufacturing a doped zone of a microelectronic device

Semiconductor device

Fin field-effect transistor

Semiconductor arrangement and method of manufacture

Method for forming complementary doped semiconductor regions in a s...

Semiconductor device and forming method thereof

Isolation well doping with solid-state diffusion sources for finFET...

Dual transport orientation for stacked vertical transport field-eff...

Method of producing differently doped zones in a silicon substrate,...

Well and punch through stopper formation using conformal doping

Semiconductor device and method for fabricating the same

Semiconductor device

Reducing gate-induced-drain-leakage current in a transistor by form...

Doping with solid-state diffusion sources for finFET architectures

Well and punch through stopper formation using conformal doping

Method for doping semiconductor substrates by means of a co-diffusi...

Diffusing agent composition and method of manufacturing semiconduct...

Doping with solid-state diffusion sources for finFET architectures

Semiconductor device and fabrication method thereof

Silicon germanium fin channel formation

Semiconductor device and method for fabricating the same

Stacked vertical NFET and PFET

Methods of forming epi semiconductor material on a recessed fin in...

Reverse-blocking IGBT having a reverse-blocking edge termination st...

Method for manufacturing a semiconductor device comprising a thin s...

Method and structure for forming FinFET CMOS with dual doped STI re...

Doping channels of edge cells to provide uniform programming speed...

Semiconductor device and method for fabricating the same

Methods for forming semiconductors by diffusion

Patents Applicationslast 30 patents

BACK-CONTACT SOLAR CELL, AND PRODUCTION THEREOF

METHOD FOR PROVIDING DOPED SILICON

METHOD OF MANUFACTURING A DOPED AREA OF A MICROELECTRONIC DEVICE

SEMICONDUCTOR DEVICE

ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET...

DUAL TRANSPORT ORIENTATION FOR STACKED VERTICAL TRANSPORT FIELD-EFF...

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

REDUCING GATE-INDUCED-DRAIN-LEAKAGE CURRENT IN A TRANSISTOR BY FORM...

WELL AND PUNCH THROUGH STOPPER FORMATION USING CONFORMAL DOPING

DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES

Method for Forming Complementary Doped Semiconductor Regions in a S...

FIN FIELD-EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

DIFFUSING AGENT COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCT...

SEMICONDUCTOR DEVICE

SILICON GERMANIUM FIN CHANNEL FORMATION

DOPING CHANNELS OF EDGE CELLS TO PROVIDE UNIFORM PROGRAMMING SPEED...

METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A RECESSED FIN IN...

WELL AND PUNCH THROUGH STOPPER FORMATION USING CONFORMAL DOPING

NANOPARTICLE STRUCTURE AND PROCESS FOR MANUFACTURE

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

DOPANT INTRODUCTION METHOD AND HEAT TREATMENT METHOD

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD AND STRUCTURE FOR FORMING FINFET CMOS WITH DUAL DOPED STI RE...

PUNCHTHROUGH STOP LAYERS FOR FIN-TYPE FIELD-EFFECT TRANSISTORS

Reverse-Blocking IGBT Having a Reverse-Blocking Edge Termination St...

LASER DOPING OF SEMICONDUCTORS

TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME