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H01L27/11587

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/11587Top-view layout

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory structure and method of manufacturing the same
- Patent number 11,683,936
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 11,672,126
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device film stacks with texturing layer, and method o...
- Patent number 11,659,714
- Issue date May 23, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array contact structures
- Patent number 11,653,500
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices and methods of manufacturing thereof
- Patent number 11,647,637
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,637,126
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 11,631,698
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device, method of manufacturing the same, and...
- Patent number 11,626,498
- Issue date Apr 11, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric memory device containing lattice-ma...
- Patent number 11,594,553
- Issue date Feb 28, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,587,950
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 11,587,938
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure and device
- Patent number 11,581,336
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Ming Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 11,581,337
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D ferroelectric memory
- Patent number 11,574,929
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure and method for forming the same
- Patent number 11,574,928
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chenchen Jacob Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the semiconductor...
- Patent number 11,563,032
- Issue date Jan 24, 2023
- SK hynix Inc.
- Kun Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional stackable ferroelectric random access memory devi...
- Patent number 11,552,103
- Issue date Jan 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric field effect transistors having enhanced memory windo...
- Patent number 11,545,506
- Issue date Jan 3, 2023
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a three-dimensional memory
- Patent number 11,532,640
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array including dummy regions
- Patent number 11,532,343
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with ferroelectricity
- Patent number 11,532,641
- Issue date Dec 20, 2022
- SK hynix Inc.
- In Ku Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 11,527,552
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,527,553
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell arrangements and methods thereof
- Patent number 11,527,551
- Issue date Dec 13, 2022
- FERROELECTRIC MEMORY GMBH
- Johannes Ocker
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of fabricating the memory device
- Patent number 11,522,046
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Grid structure to reduce domain size in ferroelectric memory device
- Patent number 11,508,752
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell arrangement and methods thereof
- Patent number 11,508,756
- Issue date Nov 22, 2022
- FERROELECTRIC MEMORY GMBH
- Menno Mennenga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antiferroelectric memory devices and methods of making the same
- Patent number 11,502,104
- Issue date Nov 15, 2022
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,495,618
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory devices and structures with multiple memory levels
- Patent number 11,482,541
- Issue date Oct 25, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TCAM WITH HYSTERETIC OXIDE MEMORY CELLS
- Publication number 20240105248
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek Anil Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR, MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE
- Publication number 20240081077
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Tsun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240064994
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064992
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICE AND WAVE COMPUTING DEVICE
- Publication number 20240057341
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben DOORNBOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D LATERAL PATTERNING VIA SELECTIVE DEPOSITION FOR FERROELECTRIC DE...
- Publication number 20240032300
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230413571
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ling LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230403858
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230284453
- Publication date Sep 7, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF THREE-DIMENSIONAL MEMORY ARRAY
- Publication number 20230269946
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- G11 - INFORMATION STORAGE
Information Patent Application
BACK-END ACTIVE DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP
- Publication number 20230269948
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20230262986
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ling LU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF JUNCTIO...
- Publication number 20230262987
- Publication date Aug 17, 2023
- Sunrise Memory Corporation
- Eli Harari
- G11 - INFORMATION STORAGE
Information Patent Application
3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION
- Publication number 20230240078
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230230921
- Publication date Jul 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230225129
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230225131
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230225130
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Chun Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS AND METHODS FOR FORMING THE SAME
- Publication number 20230138939
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gao-Ming WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...
- Publication number 20230109965
- Publication date Apr 13, 2023
- SK HYNIX INC.
- Kun Young LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND...
- Publication number 20230110504
- Publication date Apr 13, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230106816
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME
- Publication number 20230107911
- Publication date Apr 6, 2023
- Samsung Electronics Co., Ltd.
- Dukhyun CHOE
- C01 - INORGANIC CHEMISTRY
Information Patent Application
THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...
- Publication number 20230078883
- Publication date Mar 16, 2023
- Sunrise Memory Corporation
- Wu-Yi Henry Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230083989
- Publication date Mar 16, 2023
- RENESAS ELECTRONICS CORPORATION
- Tatsuyoshi MIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Three-Dimensional Memory Devices
- Publication number 20230076806
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...
- Publication number 20230074522
- Publication date Mar 9, 2023
- SK HYNIX INC.
- In Ku KANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC RANDOM-ACCESS MEMORY (FERAM)
- Publication number 20230062718
- Publication date Mar 2, 2023
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device and Method of Forming Thereof
- Publication number 20230063038
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAPS IN MEMORY ARRAY STRUCTURES
- Publication number 20230067455
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS

Top-view layout

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory structure and method of manufacturing the same

Three-dimensional memory device and manufacturing method thereof

Ferroelectric device film stacks with texturing layer, and method o...

Memory array contact structures

Semiconductor memory devices and methods of manufacturing thereof

Memory device and method of forming the same

Three-dimensional memory device with ferroelectric material

Semiconductor memory device, method of manufacturing the same, and...

Three-dimensional ferroelectric memory device containing lattice-ma...

Memory device and method of forming the same

Methods of incorporating leaker devices into capacitor configuratio...

Semiconductor memory structure and device

Three-dimensional memory device and manufacturing method thereof

3D ferroelectric memory

Semiconductor memory structure and method for forming the same

Semiconductor device and manufacturing method of the semiconductor...

Three-dimensional stackable ferroelectric random access memory devi...

Ferroelectric field effect transistors having enhanced memory windo...

Method for manufacturing a three-dimensional memory

Memory array including dummy regions

Semiconductor device with ferroelectricity

Ferroelectric memory device and method of forming the same

Three-dimensional memory device and method

Memory cell arrangements and methods thereof

Memory device and method of fabricating the memory device

Grid structure to reduce domain size in ferroelectric memory device

Memory cell arrangement and methods thereof

Antiferroelectric memory devices and methods of making the same

Three-dimensional memory device and method

3D memory devices and structures with multiple memory levels

Patents Applicationslast 30 patents

TCAM WITH HYSTERETIC OXIDE MEMORY CELLS

TRANSISTOR, MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE

MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

FERROELECTRIC DEVICE AND WAVE COMPUTING DEVICE

3D LATERAL PATTERNING VIA SELECTIVE DEPOSITION FOR FERROELECTRIC DE...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

STRUCTURE OF THREE-DIMENSIONAL MEMORY ARRAY

BACK-END ACTIVE DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP

FERROELECTRIC MEMORY DEVICE AND METHOD OF MAKING THE SAME

MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF JUNCTIO...

3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND METHOD OF FORMING THE SAME

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

VERTICAL FIELD EFFECT TRANSISTORS AND METHODS FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...

SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND...

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME

THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Methods of Forming Three-Dimensional Memory Devices

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...

THREE-DIMENSIONAL FERROELECTRIC RANDOM-ACCESS MEMORY (FERAM)

Memory Device and Method of Forming Thereof

AIR GAPS IN MEMORY ARRAY STRUCTURES