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H01L27/11504

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/11504Top-view layout

Industries

Patents Grantslast 30 patents

Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 11,672,128
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Marcello Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors and memory arrays
- Patent number 11,605,723
- Issue date Mar 14, 2023
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 11,587,938
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded memory devices and methods of making the same
- Patent number 11,538,817
- Issue date Dec 27, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density low voltage multi-element ferroelectric gain memory bi...
- Patent number 11,521,666
- Issue date Dec 6, 2022
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell arrangement and methods thereof
- Patent number 11,508,756
- Issue date Nov 22, 2022
- FERROELECTRIC MEMORY GMBH
- Menno Mennenga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an array of capacitors
- Patent number 11,476,262
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell arrangement and method thereof
- Patent number 11,380,695
- Issue date Jul 5, 2022
- FERROELECTRIC MEMORY GMBH
- Johannes Ocker
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and electronic apparatus
- Patent number 11,374,013
- Issue date Jun 28, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Masanori Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell disturb prevention using a leaker device to reduce excess char...
- Patent number 11,367,730
- Issue date Jun 21, 2022
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,342,344
- Issue date May 24, 2022
- Electronics and Telecommunications Research Institute
- Seungeon Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,335,626
- Issue date May 17, 2022
- Micron Technology, Inc.
- Zhuo Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker-devices into capacitor configuratio...
- Patent number 11,315,939
- Issue date Apr 26, 2022
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
FeRAM decoupling capacitor
- Patent number 11,296,099
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded bonded assembly and method for making the same
- Patent number 11,276,705
- Issue date Mar 15, 2022
- SanDisk Technologies LLC
- Chen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of capacitors, array of memory cells, methods of forming an a...
- Patent number 11,244,952
- Issue date Feb 8, 2022
- Micron Technology, Inc.
- Sameer Chhajed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell having top and bottom electrodes defining recesses
- Patent number 11,183,503
- Issue date Nov 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,171,146
- Issue date Nov 9, 2021
- Micron Technology, Inc.
- Robert B. Goodwin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,127,744
- Issue date Sep 21, 2021
- Micron Technology, Inc.
- Giorgio Servalli
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric tunnel junction memory device with integrated ovonic...
- Patent number 11,121,140
- Issue date Sep 14, 2021
- SanDisk Technologies LLC
- Seung-Yeul Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated assemblies
- Patent number 11,107,724
- Issue date Aug 31, 2021
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a three-dimensional non-volatile memory device
- Patent number 11,107,829
- Issue date Aug 31, 2021
- SK Hynix Inc.
- Eun Mee Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell arrangement and methods thereof
- Patent number 11,101,291
- Issue date Aug 24, 2021
- FERROELECTRIC MEMORY GMBH
- Menno Mennenga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays comprising vertically-alternating tiers of insulative...
- Patent number 11,011,529
- Issue date May 18, 2021
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses and methods including ferroelectric memory and for acce...
- Patent number 10,998,031
- Issue date May 4, 2021
- Micron Technology, Inc.
- Christopher J. Kawamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices having multi-level metallization structures
- Patent number 10,930,648
- Issue date Feb 23, 2021
- Samsung Electronics Co., Ltd.
- Moon Gi Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker-devices into capacitor configuratio...
- Patent number 10,903,218
- Issue date Jan 26, 2021
- Micron Technology, Inc.
- Alessandro Calderoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a memory device
- Patent number 10,886,298
- Issue date Jan 5, 2021
- Chen-Chih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory devices
- Patent number 10,861,862
- Issue date Dec 8, 2020
- WUXI PETABYTE TECHNOLOGIES CO, LTD.
- Zhenyu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having ferroelectric layer and method of manuf...
- Patent number 10,861,878
- Issue date Dec 8, 2020
- SK hynix Inc.
- Hyangkeun Yoo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...
- Publication number 20240114693
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher M. Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230422514
- Publication date Dec 28, 2023
- SK HYNIX INC.
- Min Chul SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE
- Publication number 20230397433
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Fatma Arzum SIMSEK-EGE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Device
- Publication number 20230309317
- Publication date Sep 28, 2023
- Samsung Electronics Co., Ltd.
- Hyuncheol KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230290810
- Publication date Sep 14, 2023
- SAMSUNG ELECTRONICS CO,. LTD.
- JUNGMIN PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAGONAL MEMORY WITH VERTICAL TRANSISTORS AND WRAP-AROUND CONTROL L...
- Publication number 20230200084
- Publication date Jun 22, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D FERROELECTRIC MEMORY CELL ARCHITECTURES
- Publication number 20230200080
- Publication date Jun 22, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NANORIBBON-BASED HYSTERETIC MEMORY
- Publication number 20230180482
- Publication date Jun 8, 2023
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC THREE-DIMENSIONAL MEMORY
- Publication number 20230097641
- Publication date Mar 30, 2023
- Intel Corporation
- Christopher M. NEUMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...
- Publication number 20230097736
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC NONVOLATILE MEMORY DEVICE AND INTEGRATION SCHEMES
- Publication number 20230067884
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- JOHANNES MÜLLER
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20230027308
- Publication date Jan 26, 2023
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
Array of Capacitors, Array of Memory Cells, Methods of Forming an A...
- Publication number 20230013333
- Publication date Jan 19, 2023
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL DISTURB PREVENTION USING A LEAKER DEVICE TO REDUCE EXCESS CHAR...
- Publication number 20220310636
- Publication date Sep 29, 2022
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY CELL
- Publication number 20220310638
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Devices and Methods of Forming Memory Devices
- Publication number 20220285392
- Publication date Sep 8, 2022
- Micron Technology, Inc.
- Giorgio Servalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20220238417
- Publication date Jul 28, 2022
- Micron Technology, Inc.
- Zhuo Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM Decoupling Capacitor
- Publication number 20220231034
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-FERROELECTRIC RANDOM (3D-FRAM) WITH BURIED TRENCH CAPACITORS
- Publication number 20220208778
- Publication date Jun 30, 2022
- Intel Corporation
- Nazila HARATIPOUR
- G11 - INFORMATION STORAGE
Information Patent Application
Methods of Forming Structures Containing Leaker-Devices and Memory...
- Publication number 20220199634
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL ARRANGEMENT AND METHOD THEREOF
- Publication number 20220139936
- Publication date May 5, 2022
- Ferroelectric Memory GmbH
- Johannes OCKER
- G11 - INFORMATION STORAGE
Information Patent Application
Array Of Capacitors, Array Of Memory Cells, Methods Of Forming An A...
- Publication number 20220130845
- Publication date Apr 28, 2022
- Micron Technology, Inc.
- Sameer Chhajed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20220084906
- Publication date Mar 17, 2022
- Micron Technology, Inc.
- Zhuo Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION METHOD FOR MEMORY CELL
- Publication number 20220077165
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Array Of Capacitors, Array Of Memory Cells, Methods Of Forming An A...
- Publication number 20220037342
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors and Memory Arrays
- Publication number 20220037504
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Incorporating Leaker Devices into Capacitor Configuratio...
- Publication number 20220020756
- Publication date Jan 20, 2022
- Micron Technology, Inc.
- Marcello Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRANGEMENT AND METHODS THEREOF
- Publication number 20220020776
- Publication date Jan 20, 2022
- Menno Mennenga
- G11 - INFORMATION STORAGE
Information Patent Application
BONDED MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20210408020
- Publication date Dec 30, 2021
- SANDISK TECHNOLOGIES LLC
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Devices and Methods of Forming Memory Devices
- Publication number 20210391334
- Publication date Dec 16, 2021
- Micron Technology, Inc.
- Giorgio Servalli
- G11 - INFORMATION STORAGE

Top-view layout

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of incorporating leaker devices into capacitor configuratio...

Transistors and memory arrays

Methods of incorporating leaker devices into capacitor configuratio...

Bonded memory devices and methods of making the same

High-density low voltage multi-element ferroelectric gain memory bi...

Memory cell arrangement and methods thereof

Methods of forming an array of capacitors

Memory cell arrangement and method thereof

Semiconductor storage device and electronic apparatus

Cell disturb prevention using a leaker device to reduce excess char...

Memory device and method of manufacturing the same

Integrated assemblies and methods of forming integrated assemblies

Methods of incorporating leaker-devices into capacitor configuratio...

FeRAM decoupling capacitor

Embedded bonded assembly and method for making the same

Array of capacitors, array of memory cells, methods of forming an a...

Memory cell having top and bottom electrodes defining recesses

Memory devices and methods of forming memory devices

Memory devices and methods of forming memory devices

Ferroelectric tunnel junction memory device with integrated ovonic...

Methods of forming integrated assemblies

Method of manufacturing a three-dimensional non-volatile memory device

Memory cell arrangement and methods thereof

Memory arrays comprising vertically-alternating tiers of insulative...

Apparatuses and methods including ferroelectric memory and for acce...

Semiconductor devices having multi-level metallization structures

Methods of incorporating leaker-devices into capacitor configuratio...

Method of forming a memory device

Ferroelectric memory devices

Semiconductor device having ferroelectric layer and method of manuf...

Patents Applicationslast 30 patents

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE

Semiconductor Memory Device

SEMICONDUCTOR DEVICE

DIAGONAL MEMORY WITH VERTICAL TRANSISTORS AND WRAP-AROUND CONTROL L...

3D FERROELECTRIC MEMORY CELL ARCHITECTURES

THREE-DIMENSIONAL NANORIBBON-BASED HYSTERETIC MEMORY

FERROELECTRIC THREE-DIMENSIONAL MEMORY

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...

FERROELECTRIC NONVOLATILE MEMORY DEVICE AND INTEGRATION SCHEMES

Integrated Assemblies and Methods of Forming Integrated Assemblies

Array of Capacitors, Array of Memory Cells, Methods of Forming an A...

CELL DISTURB PREVENTION USING A LEAKER DEVICE TO REDUCE EXCESS CHAR...

FERROELECTRIC MEMORY CELL

Memory Devices and Methods of Forming Memory Devices

Integrated Assemblies and Methods of Forming Integrated Assemblies

FeRAM Decoupling Capacitor

3D-FERROELECTRIC RANDOM (3D-FRAM) WITH BURIED TRENCH CAPACITORS

Methods of Forming Structures Containing Leaker-Devices and Memory...

MEMORY CELL ARRANGEMENT AND METHOD THEREOF

Array Of Capacitors, Array Of Memory Cells, Methods Of Forming An A...

Integrated Assemblies and Methods of Forming Integrated Assemblies

INTEGRATION METHOD FOR MEMORY CELL

Array Of Capacitors, Array Of Memory Cells, Methods Of Forming An A...

Transistors and Memory Arrays

Methods of Incorporating Leaker Devices into Capacitor Configuratio...

MEMORY CELL ARRANGEMENT AND METHODS THEREOF

BONDED MEMORY DEVICES AND METHODS OF MAKING THE SAME

Memory Devices and Methods of Forming Memory Devices