trench shape altered by a local oxidation of silicon process step

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H01L21/76235

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76235trench shape altered by a local oxidation of silicon process step

Industries

Patents Grantslast 30 patents

Information Patent Grant
Trench shield isolation layer
- Patent number 11,791,198
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structure and manufacturing method therefor
- Patent number 11,315,824
- Issue date Apr 26, 2022
- CSMC Technologies FAB2 Co., Ltd.
- Shukun Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,302,568
- Issue date Apr 12, 2022
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and fabrication method thereof
- Patent number 11,158,533
- Issue date Oct 26, 2021
- Vanguard International Semiconductor Corporation
- Ching-Yi Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing isolation structure for LDMOS
- Patent number 11,127,840
- Issue date Sep 21, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for semiconductor device with reduced device f...
- Patent number 10,861,737
- Issue date Dec 8, 2020
- Vanguard International Semiconductor Corporation
- Chien-Hsien Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,707,216
- Issue date Jul 7, 2020
- Samsung Electronics Co., Ltd.
- Sungmi Yoon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Shallow trench isolation formation without planarization
- Patent number 10,163,679
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for semiconductor device with reduced device f...
- Patent number 9,978,635
- Issue date May 22, 2018
- Vanguard International Semiconductor Corporation
- Chien-Hsien Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high voltage device fabrication
- Patent number 9,966,265
- Issue date May 8, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Shuai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with shallow trench is...
- Patent number 9,653,343
- Issue date May 16, 2017
- UNITED MOCIROELECTRONICS CORP.
- Kai-Kuen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with shallow trench isolation and manufactu...
- Patent number 9,646,871
- Issue date May 9, 2017
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation in bulk substrate
- Patent number 9,337,260
- Issue date May 10, 2016
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and formation thereof
- Patent number 9,257,559
- Issue date Feb 9, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing defects in shallow trench isolation
- Patent number 9,105,687
- Issue date Aug 11, 2015
- NXP B.V.
- Jerome Dubois
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming shallow trench isolations
- Patent number 8,912,074
- Issue date Dec 16, 2014
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-portion shallow-trench isolation
- Patent number 8,823,132
- Issue date Sep 2, 2014
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locos nitride capping of deep trench polysilicon fill
- Patent number 8,461,661
- Issue date Jun 11, 2013
- Polar Semiconductor, Inc.
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of dielectrically insulating soi-technlogical trenches com...
- Patent number 7,989,308
- Issue date Aug 2, 2011
- X-Fab Semiconductor Foundries AG.
- Ralf Lerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structure having reduced dislocation density
- Patent number 7,915,173
- Issue date Mar 29, 2011
- Macronix International Co., Ltd.
- Pei-Ren Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor body with a trench and sem...
- Patent number 7,888,234
- Issue date Feb 15, 2011
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device with a trench isolatio...
- Patent number 7,808,031
- Issue date Oct 5, 2010
- Renesas Technology Corp.
- Jun Sumino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing a shallow trench isolation
- Patent number 7,781,303
- Issue date Aug 24, 2010
- ProMos Technologies Inc.
- Hai Jun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor including STI and method for manufacturing the same
- Patent number 7,759,214
- Issue date Jul 20, 2010
- Dongbu Electronics Co., Ltd.
- Suh Byoung Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and the semiconducto...
- Patent number 7,745,303
- Issue date Jun 29, 2010
- Elpida Memory Inc.
- Hirohisa Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation layers for semiconductor devices including first and seco...
- Patent number 7,652,345
- Issue date Jan 26, 2010
- Samsung Electronics Co., Ltd.
- Yun-Sung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection in integrated circuits
- Patent number 7,632,737
- Issue date Dec 15, 2009
- Micron Technology, Inc.
- Neal R. Rueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 7,611,962
- Issue date Nov 3, 2009
- Dongbu Electronics Co., Ltd.
- Sung Ho Kwak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,608,518
- Issue date Oct 27, 2009
- Dongbu Hitek Co., Ltd.
- Yong Wook Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form shallow trench isolation with rounded upper corner f...
- Patent number 7,504,339
- Issue date Mar 17, 2009
- Texas Instruments Incorporated
- Zhihao Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED FET SUBSTRATE CONTACT
- Publication number 20240071811
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PRE-CLEANING TREAT...
- Publication number 20230317508
- Publication date Oct 5, 2023
- NANYA TECHNOLOGY CORPORATION
- WEI-CHEN PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230307526
- Publication date Sep 28, 2023
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Huan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230207666
- Publication date Jun 29, 2023
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Huan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20220208601
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20210287932
- Publication date Sep 16, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun Ql
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20200312710
- Publication date Oct 1, 2020
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20200219761
- Publication date Jul 9, 2020
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- JONG-MOO CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20200203216
- Publication date Jun 25, 2020
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- DONGGEUN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF
- Publication number 20200144101
- Publication date May 7, 2020
- Vanguard International Semiconductor Corporation
- Ching-Yi HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING ISOLATION STRUCTURE FOR LDMOS
- Publication number 20200006529
- Publication date Jan 2, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190296025
- Publication date Sep 26, 2019
- Samsung Electronics Co., Ltd.
- Sungmi YOON
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SHALLOW TRENCH ISOLATION FORMATION WITHOUT PLANARIZATION
- Publication number 20180350659
- Publication date Dec 6, 2018
- GLOBALFOUNDRIES INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE WITH REDUCED DEVICE F...
- Publication number 20180247859
- Publication date Aug 30, 2018
- Vanguard International Semiconductor Corporation
- Chien-Hsien Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20160027684
- Publication date Jan 28, 2016
- Taiwan Semiconductor Manufacturing company Ltd.
- CHE-CHENG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE WITH REDUCED DEVICE F...
- Publication number 20150279987
- Publication date Oct 1, 2015
- Vanguard International Semiconductor Corporation
- Chien-Hsien Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMATION THEREOF
- Publication number 20150200300
- Publication date Jul 16, 2015
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING STI STRUCTURE AND METHOD FOR FORMING...
- Publication number 20150041948
- Publication date Feb 12, 2015
- Semiconductor Manufacturing International (Beijing) Corporation
- XIANYONG PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION
- Publication number 20140332920
- Publication date Nov 13, 2014
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SHALLOW TRENCH ISOLATIONS
- Publication number 20140322891
- Publication date Oct 30, 2014
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two-Portion Shallow-Trench Isolation
- Publication number 20140191358
- Publication date Jul 10, 2014
- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming silicon oxide film, storage medium, and plasma p...
- Publication number 20110017586
- Publication date Jan 27, 2011
- TOKYO ELECTRON LIMITED
- Hideo Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCOS NITRIDE CAPPING OF DEEP TRENCH POLYSILICON FILL
- Publication number 20100252905
- Publication date Oct 7, 2010
- Polar Semiconductor, Inc.
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SILICON OXIDE FILM, CONTROL PROGRAM THEREOF, R...
- Publication number 20090239352
- Publication date Sep 24, 2009
- TOKYO ELECTRON LIMITED
- Junichi Kitagawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20090065890
- Publication date Mar 12, 2009
- Yong-Keon Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING A SHALLOW TRENCH ISOLATION
- Publication number 20080293213
- Publication date Nov 27, 2008
- ProMOS Technologies Inc.
- Neng Hui Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor body with a trench and sem...
- Publication number 20080290445
- Publication date Nov 27, 2008
- austriamicrosystems AG Schloss Premstatten
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING A SHALLOW TRENCH ISOLATION
- Publication number 20080286936
- Publication date Nov 20, 2008
- ProMOS Technologies Inc.
- Hai Jun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Creation of Dielectrically Insulating Soi-Technlogical Trenches Com...
- Publication number 20080265364
- Publication date Oct 30, 2008
- X-FAB SEMICONDUCTOR FOUNDRIES AG
- Ralf Lerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI LINER MODIFICATION METHOD
- Publication number 20080157266
- Publication date Jul 3, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS

trench shape altered by a local oxidation of silicon process step

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Trench shield isolation layer

Trench isolation structure and manufacturing method therefor

Trench shield isolation layer

Semiconductor structures and fabrication method thereof

Method for manufacturing isolation structure for LDMOS

Method and apparatus for semiconductor device with reduced device f...

Semiconductor device and method for manufacturing the same

Shallow trench isolation formation without planarization

Method and apparatus for semiconductor device with reduced device f...

Method of high voltage device fabrication

Method of manufacturing semiconductor device with shallow trench is...

Semiconductor structure with shallow trench isolation and manufactu...

Shallow trench isolation in bulk substrate

Semiconductor device and formation thereof

Method for reducing defects in shallow trench isolation

Method of forming shallow trench isolations

Two-portion shallow-trench isolation

Locos nitride capping of deep trench polysilicon fill

Creation of dielectrically insulating soi-technlogical trenches com...

Shallow trench isolation structure having reduced dislocation density

Method for manufacturing a semiconductor body with a trench and sem...

Method of fabricating a semiconductor device with a trench isolatio...

Method for preparing a shallow trench isolation

Semiconductor including STI and method for manufacturing the same

Method of manufacturing a semiconductor device and the semiconducto...

Isolation layers for semiconductor devices including first and seco...

Protection in integrated circuits

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

Method to form shallow trench isolation with rounded upper corner f...

Patents Applicationslast 30 patents

STACKED FET SUBSTRATE CONTACT

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PRE-CLEANING TREAT...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRENCH SHIELD ISOLATION LAYER

TRENCH ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREFOR

TRENCH SHIELD ISOLATION LAYER

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF

METHOD FOR MANUFACTURING ISOLATION STRUCTURE FOR LDMOS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SHALLOW TRENCH ISOLATION FORMATION WITHOUT PLANARIZATION

METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE WITH REDUCED DEVICE F...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE WITH REDUCED DEVICE F...

SEMICONDUCTOR DEVICE AND FORMATION THEREOF

SEMICONDUCTOR DEVICE INCLUDING STI STRUCTURE AND METHOD FOR FORMING...

SHALLOW TRENCH ISOLATION

METHOD OF FORMING SHALLOW TRENCH ISOLATIONS

Two-Portion Shallow-Trench Isolation

Method for forming silicon oxide film, storage medium, and plasma p...

LOCOS NITRIDE CAPPING OF DEEP TRENCH POLYSILICON FILL

METHOD FOR PRODUCING SILICON OXIDE FILM, CONTROL PROGRAM THEREOF, R...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD FOR PREPARING A SHALLOW TRENCH ISOLATION

Method for manufacturing a semiconductor body with a trench and sem...

METHOD FOR PREPARING A SHALLOW TRENCH ISOLATION

Creation of Dielectrically Insulating Soi-Technlogical Trenches Com...

STI LINER MODIFICATION METHOD