using ammonia as solvent

Industry

CPC
C30B7/105

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature

Current Industry

C30B7/105using ammonia as solvent

Industries

Patents Grantslast 30 patents

Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...
- Patent number 12,060,653
- Issue date Aug 13, 2024
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ultrapure mineralizer and improved methods for nitride crystal growth
- Patent number 12,024,795
- Issue date Jul 2, 2024
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
- Patent number 11,898,269
- Issue date Feb 13, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Substrate-free 2D tellurene
- Patent number 11,827,515
- Issue date Nov 28, 2023
- Purdue Research Foundation
- Wenzhuo Wu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for reducing lateral growth of GaN crystals in an ammonother...
- Patent number 11,821,108
- Issue date Nov 21, 2023
- Instytut Wysokich Cisnien Polskiej Akademii Nauk
- Karolina Grabianska
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low-dislocation bulk GaN crystal and method of fabricating same
- Patent number 11,767,609
- Issue date Sep 26, 2023
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Group III nitride substrate, method of making, and method of use
- Patent number 11,705,322
- Issue date Jul 18, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
High quality group-III metal nitride seed crystal and method of making
- Patent number 11,661,670
- Issue date May 30, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and manufacture of low-dimensional materials supporting bot...
- Patent number 11,651,957
- Issue date May 16, 2023
- SemiNuclear, Inc.
- Patrick Curran
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,591,715
- Issue date Feb 28, 2023
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composition and method for making picocrystalline artificial borane...
- Patent number 11,521,853
- Issue date Dec 6, 2022
- SemiNuclear, Inc.
- Patrick Curran
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
- Patent number 11,453,956
- Issue date Sep 27, 2022
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
- Patent number 11,404,268
- Issue date Aug 2, 2022
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar or semi-polar GaN wafer
- Patent number 11,236,439
- Issue date Feb 1, 2022
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 11,162,190
- Issue date Nov 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method and system for preparing polycrystalline group III metal nit...
- Patent number 11,047,041
- Issue date Jun 29, 2021
- SLT TECHNOLOGIES, INC.
- Douglas W. Pocius
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,038,024
- Issue date Jun 15, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,031,475
- Issue date Jun 8, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,001,940
- Issue date May 11, 2021
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
- Patent number 10,995,421
- Issue date May 4, 2021
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming a GaN single crystal comprising disposing a nucle...
- Patent number 10,975,492
- Issue date Apr 13, 2021
- SLT TECHNOLOGIES, INC.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Boron nitride and method of producing boron nitride
- Patent number 10,892,094
- Issue date Jan 12, 2021
- Board of Trustees of Northern Illinois University
- Narayan S. Hosmane
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Substrate-free 2D tellurene
- Patent number 10,800,657
- Issue date Oct 13, 2020
- Purdue Research Foundation
- Wenzhuo Wu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for growing GaN crystal and C-plane GaN substrate
- Patent number 10,720,326
- Issue date Jul 21, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
- Patent number 10,655,244
- Issue date May 19, 2020
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal of monovalent cation salt of 3-hydroxyisovaleric acid and p...
- Patent number 10,647,653
- Issue date May 12, 2020
- KYOWA HAKKO BIO CO., LTD.
- Tomoya Yokoi
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
- Patent number 10,648,102
- Issue date May 12, 2020
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method and system for preparing polycrystalline group III metal nit...
- Patent number 10,619,239
- Issue date Apr 14, 2020
- SLT TECHNOLOGIES, INC.
- Douglas W. Pocius
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYST...
- Publication number 20240247406
- Publication date Jul 25, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. CARDWELL
- C30 - CRYSTAL GROWTH
Information Patent Application
ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH
- Publication number 20240240352
- Publication date Jul 18, 2024
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
- Publication number 20240191395
- Publication date Jun 13, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240183074
- Publication date Jun 6, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...
- Publication number 20240158951
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL-BASED THERMAL INSULATION STRUCTURES
- Publication number 20240159348
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...
- Publication number 20240158950
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE P...
- Publication number 20240158949
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240133076
- Publication date Apr 25, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
- Publication number 20230392280
- Publication date Dec 7, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...
- Publication number 20230340695
- Publication date Oct 26, 2023
- SLT TECHNOLOGIES, INC.
- Dirk EHRENTRAUT
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
- Publication number 20230317444
- Publication date Oct 5, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING
- Publication number 20230295839
- Publication date Sep 21, 2023
- SLT TECHNOLOGIES, INC.
- Keiji FUKUTOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20230253461
- Publication date Aug 10, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE WITH OXYGEN GRADIENT, METHOD OF MAKING,...
- Publication number 20230167586
- Publication date Jun 1, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
HEATER FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING...
- Publication number 20230110306
- Publication date Apr 13, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE-FREE 2D TELLURENE
- Publication number 20230002228
- Publication date Jan 5, 2023
- Purdue Research Foundation
- Wenzhuo Wu
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR REDUCING A LATERAL GROWTH OF CRYSTALS
- Publication number 20220411955
- Publication date Dec 29, 2022
- INSTYTUT WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK
- Karolina Grabianska
- C30 - CRYSTAL GROWTH
Information Patent Application
ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH
- Publication number 20220136128
- Publication date May 5, 2022
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GAN CRYSTAL, C-PLANE GAN WAFER, AND METHOD FOR MANUFACTURING B...
- Publication number 20220112624
- Publication date Apr 14, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20220033992
- Publication date Feb 3, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW-DISLOCATION BULK GAN CRYSTAL AND METHOD OF FABRICATING SAME
- Publication number 20210355598
- Publication date Nov 18, 2021
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20210273058
- Publication date Sep 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD...
- Publication number 20210249252
- Publication date Aug 12, 2021
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20210230770
- Publication date Jul 29, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH QUALITY GROUP-III METAL NITRIDE SEED CRYSTAL AND METHOD OF MAKING
- Publication number 20210222317
- Publication date Jul 22, 2021
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and Manufacture of Low-Dimensional Materials Supporting Bot...
- Publication number 20210104403
- Publication date Apr 8, 2021
- SemiNuclear, Inc.
- Patrick Curran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-FREE 2D TELLURENE
- Publication number 20200399124
- Publication date Dec 24, 2020
- Purdue Research Foundation
- Wenzhuo Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20200303187
- Publication date Sep 24, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NIT...
- Publication number 20200283892
- Publication date Sep 10, 2020
- SLT TECHNOLOGIES, INC.
- Douglas W. POCIUS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

using ammonia as solvent

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...

Ultrapure mineralizer and improved methods for nitride crystal growth

Oxygen-doped group III metal nitride and method of manufacture

Substrate-free 2D tellurene

Method for reducing lateral growth of GaN crystals in an ammonother...

Low-dislocation bulk GaN crystal and method of fabricating same

Group III nitride substrate, method of making, and method of use

High quality group-III metal nitride seed crystal and method of making

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Process and manufacture of low-dimensional materials supporting bot...

GaN single crystal and method for manufacturing GaN single crystal

Composition and method for making picocrystalline artificial borane...

Method for growth of a merged crystal by bonding at least a first a...

Method for growing GaN crystal and c-plane GaN substrate

Non-polar or semi-polar GaN wafer

Method for producing nitride crystal and nitride crystal

Method and system for preparing polycrystalline group III metal nit...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN single crystal and method for manufacturing GaN single crystal

Crystal of nitride of group-13 metal on periodic table, and method...

Method of forming a GaN single crystal comprising disposing a nucle...

Boron nitride and method of producing boron nitride

Substrate-free 2D tellurene

Method for growing GaN crystal and C-plane GaN substrate

GaN substrate, method for producing GaN substrate, method for produ...

Crystal of monovalent cation salt of 3-hydroxyisovaleric acid and p...

Oxygen-doped group III metal nitride and method of manufacture

Method and system for preparing polycrystalline group III metal nit...

Patents Applicationslast 30 patents

PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYST...

ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH

GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...

METAL-BASED THERMAL INSULATION STRUCTURES

APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...

STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE P...

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...

LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...

GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE

GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GROUP III NITRIDE SUBSTRATE WITH OXYGEN GRADIENT, METHOD OF MAKING,...

HEATER FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING...

SUBSTRATE-FREE 2D TELLURENE

METHOD FOR REDUCING A LATERAL GROWTH OF CRYSTALS

ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH

BULK GAN CRYSTAL, C-PLANE GAN WAFER, AND METHOD FOR MANUFACTURING B...

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

LOW-DISLOCATION BULK GAN CRYSTAL AND METHOD OF FABRICATING SAME

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD...

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

HIGH QUALITY GROUP-III METAL NITRIDE SEED CRYSTAL AND METHOD OF MAKING

Process and Manufacture of Low-Dimensional Materials Supporting Bot...

SUBSTRATE-FREE 2D TELLURENE

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NIT...