using amorphous/crystalline phase transition storage elements

Industry

CPC
G11C11/5678

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/5678using amorphous/crystalline phase transition storage elements

Industries

Patents Grantslast 30 patents

Information Patent Grant
Phase-change memory cell and method for fabricating the same
- Patent number 11,978,511
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yung-Huei Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for accessing resistive change elements operable as antifuses
- Patent number 11,972,830
- Issue date Apr 30, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Lifetime mixed level non-volatile memory system
- Patent number 11,967,370
- Issue date Apr 23, 2024
- Vervain, LLC
- G. R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Lifetime mixed level non-volatile memory system
- Patent number 11,967,369
- Issue date Apr 23, 2024
- Vervain, LLC
- G. R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal one-time programmable fuses for memory cells
- Patent number 11,948,630
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Lifetime mixed level non-volatile memory system
- Patent number 11,854,612
- Issue date Dec 26, 2023
- Vervain, LLC
- G. R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Lifetime mixed level non-volatile memory system
- Patent number 11,830,546
- Issue date Nov 28, 2023
- Vervain, LLC
- G. R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
PCRAM analog programming by a gradual reset cooling step
- Patent number 11,823,741
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with sidewall and bulk regions in planar structures
- Patent number 11,825,754
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Lorenzo Fratin
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses including multi-level memory cells and methods of opera...
- Patent number 11,798,620
- Issue date Oct 24, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory erase techniques and apparatus
- Patent number 11,790,999
- Issue date Oct 17, 2023
- Crossbar, Inc.
- Jeremy Guy
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level self-selecting memory device
- Patent number 11,769,551
- Issue date Sep 26, 2023
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques to access a self-selecting memory device
- Patent number 11,763,886
- Issue date Sep 19, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of operating resistive memory device to increase read margin
- Patent number 11,727,985
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Kwang-woo Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,727,987
- Issue date Aug 15, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Polarity-written cell architectures for a memory device
- Patent number 11,721,394
- Issue date Aug 8, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-selecting memory cells configured to store more than one bit p...
- Patent number 11,694,747
- Issue date Jul 4, 2023
- Micron Technology, Inc.
- Lingming Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Selection scheme for crosspoint memory
- Patent number 11,626,161
- Issue date Apr 11, 2023
- Intel Corporation
- Davide Mantegazza
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods including memory and operation of same
- Patent number 11,615,844
- Issue date Mar 28, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Neural network memory with an array of variable resistance memory c...
- Patent number 11,587,612
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Read spike mitigation in integrated circuit memory
- Patent number 11,587,614
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Josephine Tiu Hamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,545,202
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device and storage unit with a chalcogen element
- Patent number 11,522,132
- Issue date Dec 6, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuhiro Ohba
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses including multi-level memory cells and methods of opera...
- Patent number 11,482,280
- Issue date Oct 25, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method of memory device
- Patent number 11,475,948
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Jongryul Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses including multi-level memory cells and methods of opera...
- Patent number 11,443,799
- Issue date Sep 13, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Comparing input data to stored data
- Patent number 11,430,511
- Issue date Aug 30, 2022
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for accessing resistive change elements in resistive change...
- Patent number 11,393,508
- Issue date Jul 19, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES
- Publication number 20240147872
- Publication date May 2, 2024
- Micron Technology, Inc.
- Lorenzo Fratin
- G11 - INFORMATION STORAGE
Information Patent Application
LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM
- Publication number 20240120000
- Publication date Apr 11, 2024
- VERVAIN, LLC
- G.R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM
- Publication number 20240071485
- Publication date Feb 29, 2024
- VERVAIN, LLC
- G.R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM
- Publication number 20240013832
- Publication date Jan 11, 2024
- VERVAIN, LLC
- G.R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230377644
- Publication date Nov 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiaoguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING
- Publication number 20230360699
- Publication date Nov 9, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20230343392
- Publication date Oct 26, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Self-Selecting Memory Cells Configured to Store More Than One Bit p...
- Publication number 20230267996
- Publication date Aug 24, 2023
- Micron Technology, Inc.
- Lingming Yang
- G11 - INFORMATION STORAGE
Information Patent Application
SPIKE BASED PROGRAMMING OF A MEMORY CELL TO RESET STATE
- Publication number 20230260573
- Publication date Aug 17, 2023
- Intel Corporation
- Rouhollah Mousavi Iraei
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR STORING INFORMATION IN A CODED MANNER IN NON-VOLATILE ME...
- Publication number 20230223079
- Publication date Jul 13, 2023
- STMicroelectronics S.r.l.
- Alessandro TOMASONI
- G11 - INFORMATION STORAGE
Information Patent Application
Refresh of Neighboring Memory Cells Based on Read Status
- Publication number 20230207003
- Publication date Jun 29, 2023
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON A PHASE CHANGE MATERIAL ARRAY
- Publication number 20230153444
- Publication date May 18, 2023
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TWO-TERMINAL ONE-TIME PROGRAMMABLE FUSES FOR MEMORY CELLS
- Publication number 20230134437
- Publication date May 4, 2023
- Applied Materials, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20230100181
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
Self-Selecting Memory Cells Configured to Store More Than One Bit p...
- Publication number 20220392526
- Publication date Dec 8, 2022
- Micron Technology, Inc.
- Lingming Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES
- Publication number 20220384720
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING MULTI-LEVEL MEMORY CELLS AND METHODS OF OPERA...
- Publication number 20220366974
- Publication date Nov 17, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for Accessing Resistive Change Elements Operable as Antifuses
- Publication number 20220358970
- Publication date Nov 10, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20220351766
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIPLE MEMORY STATES DEVICE AND METHOD OF MAKING SAME
- Publication number 20220343974
- Publication date Oct 27, 2022
- Cyberswarm, Inc.
- Viorel-Georgel DUMITRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR PROGRAMMING MULTI-LEVEL SELF-SELECTING MEMORY CELL
- Publication number 20220262437
- Publication date Aug 18, 2022
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Application
AUTO-REFERENCED MEMORY CELL READ TECHNIQUES
- Publication number 20220208262
- Publication date Jun 30, 2022
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Application
PCRAM ANALOG PROGRAMMING BY A GRADUAL RESET COOLING STEP
- Publication number 20220199159
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20220199160
- Publication date Jun 23, 2022
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
POLARITY-WRITTEN CELL ARCHITECTURES FOR A MEMORY DEVICE
- Publication number 20220122663
- Publication date Apr 21, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES TO ACCESS A SELF-SELECTING MEMORY DEVICE
- Publication number 20220115068
- Publication date Apr 14, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL MEMORY PROGRAMMING AND READOUT
- Publication number 20220113892
- Publication date Apr 14, 2022
- Intel Corporation
- Davide Fugazza
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-LEVEL SELF-SELECTING MEMORY DEVICE
- Publication number 20220036946
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME
- Publication number 20220013173
- Publication date Jan 13, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
WEIGHT STORAGE USING MEMORY DEVICE
- Publication number 20210407587
- Publication date Dec 30, 2021
- Micron Technology, Inc.
- Mattia Boniardi
- G06 - COMPUTING CALCULATING COUNTING

using amorphous/crystalline phase transition storage elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Phase-change memory cell and method for fabricating the same

Methods for accessing resistive change elements operable as antifuses

Lifetime mixed level non-volatile memory system

Lifetime mixed level non-volatile memory system

Circuit design and layout with high embedded memory density

Two-terminal one-time programmable fuses for memory cells

Lifetime mixed level non-volatile memory system

Lifetime mixed level non-volatile memory system

PCRAM analog programming by a gradual reset cooling step

Memory cells with sidewall and bulk regions in planar structures

Apparatuses including multi-level memory cells and methods of opera...

Resistive random access memory erase techniques and apparatus

Multi-level self-selecting memory device

Techniques to access a self-selecting memory device

Method of operating resistive memory device to increase read margin

Semiconductor memory having both volatile and non-volatile function...

Polarity-written cell architectures for a memory device

Self-selecting memory cells configured to store more than one bit p...

Non-volatile memory

Selection scheme for crosspoint memory

Apparatuses and methods including memory and operation of same

Neural network memory with an array of variable resistance memory c...

Read spike mitigation in integrated circuit memory

Circuit design and layout with high embedded memory density

Storage device and storage unit with a chalcogen element

Apparatuses including multi-level memory cells and methods of opera...

Memory device and operating method of memory device

Apparatuses including multi-level memory cells and methods of opera...

Comparing input data to stored data

Methods for accessing resistive change elements in resistive change...

Patents Applicationslast 30 patents

MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES

LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM

LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM

LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

Self-Selecting Memory Cells Configured to Store More Than One Bit p...

SPIKE BASED PROGRAMMING OF A MEMORY CELL TO RESET STATE

METHOD FOR STORING INFORMATION IN A CODED MANNER IN NON-VOLATILE ME...

Refresh of Neighboring Memory Cells Based on Read Status

PHYSICALLY UNCLONABLE FUNCTION BASED ON A PHASE CHANGE MATERIAL ARRAY

TWO-TERMINAL ONE-TIME PROGRAMMABLE FUSES FOR MEMORY CELLS

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

Self-Selecting Memory Cells Configured to Store More Than One Bit p...

MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES

APPARATUSES INCLUDING MULTI-LEVEL MEMORY CELLS AND METHODS OF OPERA...

Methods for Accessing Resistive Change Elements Operable as Antifuses

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

MULTIPLE MEMORY STATES DEVICE AND METHOD OF MAKING SAME

TECHNIQUES FOR PROGRAMMING MULTI-LEVEL SELF-SELECTING MEMORY CELL

AUTO-REFERENCED MEMORY CELL READ TECHNIQUES

PCRAM ANALOG PROGRAMMING BY A GRADUAL RESET COOLING STEP

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

POLARITY-WRITTEN CELL ARCHITECTURES FOR A MEMORY DEVICE

TECHNIQUES TO ACCESS A SELF-SELECTING MEMORY DEVICE

MULTI-LEVEL MEMORY PROGRAMMING AND READOUT

MULTI-LEVEL SELF-SELECTING MEMORY DEVICE

APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME

WEIGHT STORAGE USING MEMORY DEVICE