using amphoteric doping

Industry

CPC
H01S5/3081

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/3081using amphoteric doping

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Passivation of VCSEL sidewalls
- Patent number 9,997,892
- Issue date Jun 12, 2018
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of VCSEL sidewalls
- Patent number 8,815,617
- Issue date Aug 26, 2014
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Waveguide device having delta doped active region
- Patent number 8,165,180
- Issue date Apr 24, 2012
- Agere Systems, INC
- Joseph Michael Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface-emitting type device and its manufacturing method
- Patent number 7,521,721
- Issue date Apr 21, 2009
- Seiko Epson Corporation
- Hajime Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ridge-type semiconductor laser element fabrication method
- Patent number 7,072,371
- Issue date Jul 4, 2006
- Rohm Co., Ltd.
- Takashi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ridge-type semiconductor laser element
- Patent number 6,847,668
- Issue date Jan 25, 2005
- Rohm, Co., Ltd.
- Takashi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated resonant tunneling device and fabricating method thereof
- Patent number 5,962,864
- Issue date Oct 5, 1999
- Kabushiki Kaisha Toshiba
- Mark L. Leadbeater
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stepped substrate semiconductor laser for emitting light at slant p...
- Patent number 5,799,027
- Issue date Aug 25, 1998
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and its manufacture utilizing crystal orientat...
- Patent number 5,783,845
- Issue date Jul 21, 1998
- Fujitsu Limited
- Makoto Kondo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing an optical semiconductor device having a carri...
- Patent number 5,728,605
- Issue date Mar 17, 1998
- Canon Kabushiki Kaisha
- Natsuhiko Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gain-coupling distributed feedback semiconductor and method of prod...
- Patent number 5,703,899
- Issue date Dec 30, 1997
- Canon Kabushiki Kaisha
- Natsuhiko Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped substrate semiconductor laser for emitting light at slant p...
- Patent number 5,684,818
- Issue date Nov 4, 1997
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a semiconductor device utilizing crystal orientati...
- Patent number 5,668,048
- Issue date Sep 16, 1997
- Fujitsu Limited
- Makoto Kondo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having diffraction grating
- Patent number 5,663,592
- Issue date Sep 2, 1997
- Canon Kabushiki Kaisha
- Seiichi Miyazawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device featuring group III and IV compounds dop...
- Patent number 5,375,137
- Issue date Dec 20, 1994
- The Furukawa Electric Co., Ltd.
- Yoshiyuki Hirayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser diode deposited on a structured substrate surface
- Patent number 5,280,535
- Issue date Jan 18, 1994
- International Business Machines Corporation
- Fritz Gfeller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 5,271,028
- Issue date Dec 14, 1993
- Sharp Kabushiki Kaisha
- Masafumi Kondo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser apparatus
- Patent number 5,115,443
- Issue date May 19, 1992
- Canon Kabushiki Kaisha
- Seiichi Miyazawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
A stripe-shaped heterojunction laser with unique current confinement
- Patent number 5,010,556
- Issue date Apr 23, 1991
- Omron Tateisi Electronics Co.
- Koichi Imanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser having a lateral p-n junction utilizing incline...
- Patent number 4,932,033
- Issue date Jun 5, 1990
- Canon Kabushiki Kaisha
- Seiichi Miyazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a stripe-shaped heterojunction laser with u...
- Patent number 4,839,307
- Issue date Jun 13, 1989
- Omron Tateisi Electronics Co.
- Koichi Imanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transverse junction stripe laser
- Patent number 4,805,179
- Issue date Feb 14, 1989
- International Business Machines Corporation
- Christoph S. Harder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure semiconductor laser
- Patent number 4,785,457
- Issue date Nov 15, 1988
- Rockwell International Corporation
- Peter M. Asbeck
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WAVEGUIDE DEVICE HAVING DELTA DOPED ACTIVE REGION
- Publication number 20100290497
- Publication date Nov 18, 2010
- Agere Systems Inc.
- Joseph Michael Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF VCSEL SIDEWALLS
- Publication number 20070254393
- Publication date Nov 1, 2007
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface-emitting type device and its manufacturing method
- Publication number 20060211263
- Publication date Sep 21, 2006
- SEIKO EPSON CORPORATION
- Hajime Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser device of III-V group compound and fabrication...
- Publication number 20060134816
- Publication date Jun 22, 2006
- SHARP KABUSHIKI KAISHA
- Hiroyuki Hosoba
- B82 - NANO-TECHNOLOGY
Information Patent Application
Ridge-type semiconductor laser element fabrication method
- Publication number 20050084997
- Publication date Apr 21, 2005
- Rohm Co., Ltd.
- Takashi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser device of III-V group compound and fabrication...
- Publication number 20040037336
- Publication date Feb 26, 2004
- SHARP KABUSHIKI KAISHA
- Hiroyuki Hosoba
- B82 - NANO-TECHNOLOGY
Information Patent Application
Ridge-type semiconductor laser element and fabrication method thereof
- Publication number 20030031223
- Publication date Feb 13, 2003
- Takashi Kimura
- H01 - BASIC ELECTRIC ELEMENTS

using amphoteric doping

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Passivation of VCSEL sidewalls

Passivation of VCSEL sidewalls

Waveguide device having delta doped active region

Surface-emitting type device and its manufacturing method

Ridge-type semiconductor laser element fabrication method

Ridge-type semiconductor laser element

Gated resonant tunneling device and fabricating method thereof

Stepped substrate semiconductor laser for emitting light at slant p...

Semiconductor device and its manufacture utilizing crystal orientat...

Method for producing an optical semiconductor device having a carri...

Gain-coupling distributed feedback semiconductor and method of prod...

Stepped substrate semiconductor laser for emitting light at slant p...

Method of making a semiconductor device utilizing crystal orientati...

Semiconductor device having diffraction grating

Semiconductor laser device featuring group III and IV compounds dop...

Semiconductor laser diode deposited on a structured substrate surface

Semiconductor laser device

Semiconductor laser apparatus

A stripe-shaped heterojunction laser with unique current confinement

Semiconductor laser having a lateral p-n junction utilizing incline...

Method of manufacturing a stripe-shaped heterojunction laser with u...

Transverse junction stripe laser

Heterostructure semiconductor laser

Patents Applicationslast 30 patents

WAVEGUIDE DEVICE HAVING DELTA DOPED ACTIVE REGION

PASSIVATION OF VCSEL SIDEWALLS

Surface-emitting type device and its manufacturing method

Semiconductor laser device of III-V group compound and fabrication...

Ridge-type semiconductor laser element fabrication method

Semiconductor laser device of III-V group compound and fabrication...

Ridge-type semiconductor laser element and fabrication method thereof