using capacitive charge storage elements

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/565using capacitive charge storage elements

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device
- Patent number 12,200,940
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Drive strength calibration for multi-level signaling
- Patent number 12,148,502
- Issue date Nov 19, 2024
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Grant
Multinary bit cells for memory devices and network applications and...
- Patent number 12,136,457
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Katherine H. Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having variable impedance memory cells and time-to-tr...
- Patent number 12,112,794
- Issue date Oct 8, 2024
- R&D 3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 12,075,635
- Issue date Aug 27, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses, systems, and methods for frequency-dependent signal mo...
- Patent number 12,051,462
- Issue date Jul 30, 2024
- Micron Technology, Inc.
- M. Ataul Karim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having variable impedance memory cells and time-to-tr...
- Patent number 12,014,770
- Issue date Jun 18, 2024
- R&D3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with multiple ferroelectric memory element...
- Patent number 11,996,144
- Issue date May 28, 2024
- Seagate Technology LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric recording medium and ferroelectric storage apparatus
- Patent number 11,990,166
- Issue date May 21, 2024
- Resonac Corporation
- Masaaki Yanagisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including sense amplifier and operation method...
- Patent number 11,984,147
- Issue date May 14, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Takanori Matsuzaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic allocation of a capacitive component in a memory device
- Patent number 11,984,187
- Issue date May 14, 2024
- Micron Technology, Inc.
- Fuad Badrieh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for bidirectionally based electrical information...
- Patent number 11,954,355
- Issue date Apr 9, 2024
- Atlas Power Technologies Inc.
- Mitchell Miller
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device, memory system, and write method
- Patent number 11,915,748
- Issue date Feb 27, 2024
- Kioxia Corporation
- Noboru Shibata
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with multiplexed digit lines
- Patent number 11,900,989
- Issue date Feb 13, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having variable impedance memory cells and time-to-tr...
- Patent number 11,900,990
- Issue date Feb 13, 2024
- R&D3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having electrically floating body transistor,...
- Patent number 11,887,666
- Issue date Jan 30, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field-effect transistor (FeFET) memory
- Patent number 11,881,242
- Issue date Jan 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Mode-dependent heating of a memory device
- Patent number 11,848,044
- Issue date Dec 19, 2023
- Micron Technology, Inc.
- Peter Mayer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-level storage in ferroelectric memory
- Patent number 11,848,042
- Issue date Dec 19, 2023
- Micron Technology, Inc.
- Christopher John Kawamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells and arrays of memory cells
- Patent number 11,810,607
- Issue date Nov 7, 2023
- Micron Technology, Inc.
- Yasushi Matsubara
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having variable impedance memory cells and time-to-tr...
- Patent number 11,783,891
- Issue date Oct 10, 2023
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device based on ferroelectric capacitor
- Patent number 11,769,541
- Issue date Sep 26, 2023
- Tsinghua University
- Xueqing Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Multinary bit cells for memory devices and network applications and...
- Patent number 11,749,341
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Time-based access of a memory cell
- Patent number 11,735,244
- Issue date Aug 22, 2023
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,723,214
- Issue date Aug 8, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric recording medium and ferroelectric storage apparatus
- Patent number 11,705,157
- Issue date Jul 18, 2023
- Resonac Corporation
- Masaaki Yanagisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Drive strength calibration for multi-level signaling
- Patent number 11,688,435
- Issue date Jun 27, 2023
- Micron Technology, Inc.
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Grant
Current separation for memory sensing
- Patent number 11,670,353
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of generating a multi-level signal using a selective level c...
- Patent number 11,651,799
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Junyoung Park
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING
- Publication number 20250046347
- Publication date Feb 6, 2025
- Lodestar Licensing Group LLC
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240381656
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC STORAGE APPARATUS AND MANUFACTURING METHOD OF CONDUCT...
- Publication number 20240282338
- Publication date Aug 22, 2024
- Resonac Corporation
- Masaaki YANAGISAWA
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE
- Publication number 20240257841
- Publication date Aug 1, 2024
- Micron Technology, Inc.
- Fuad Badrieh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Tri-state electrical information storage
- Publication number 20240248638
- Publication date Jul 25, 2024
- Atlas Power Technologies Inc.
- Mitchell Miller
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY ARRAY WITH MULTIPLEXED DIGIT LINES
- Publication number 20240242758
- Publication date Jul 18, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20240203472
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device Having Variable Impedance Memory Cells and Time-To-Tr...
- Publication number 20240127884
- Publication date Apr 18, 2024
- R&D 3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Device Having Electrically Floating Body Transistor,...
- Publication number 20240127889
- Publication date Apr 18, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC NANOPARTICLE CAPACITOR FOR NON-BINARY LOGICS AND METH...
- Publication number 20240121967
- Publication date Apr 11, 2024
- Terra Quantum AG
- Anna Razumnaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20240071453
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING
- Publication number 20230386527
- Publication date Nov 30, 2023
- Micron Technology, Inc.
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Application
MULTINARY BIT CELLS FOR MEMORY DEVICES AND NETWORK APPLICATIONS AND...
- Publication number 20230360698
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Katherine H. CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC RECORDING MEDIUM AND FERROELECTRIC STORAGE APPARATUS
- Publication number 20230282235
- Publication date Sep 7, 2023
- Resonac Corporation
- Masaaki YANAGISAWA
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF GENERATING A MULTI-LEVEL SIGNAL USING A SELECTIVE LEVEL C...
- Publication number 20230253018
- Publication date Aug 10, 2023
- Samsung Electronics Co., Ltd.
- Junyoung PARK
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device Having Variable Impedance Memory Cells and Time-to-Tr...
- Publication number 20230253033
- Publication date Aug 10, 2023
- R&D 3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND WRITE METHOD
- Publication number 20230206998
- Publication date Jun 29, 2023
- KIOXIA Corporation
- Noboru SHIBATA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230140318
- Publication date May 4, 2023
- Samsung Electronics Co., Ltd.
- Hyuncheol KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Device Having Electrically Floating Body Transistor,...
- Publication number 20230128791
- Publication date Apr 27, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE NETWORK HAVING FOUR CONTACTS PER MEMORY CELL
- Publication number 20230108879
- Publication date Apr 6, 2023
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Maximilian LEDERER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20230100181
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
CONTENT ADDRESSABLE MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20230063076
- Publication date Mar 2, 2023
- Seoul National University R&DB Foundation
- Woo Young CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device Having Variable Impedance Memory Cells and Time-To-Tr...
- Publication number 20230059170
- Publication date Feb 23, 2023
- R&D 3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL WITH MULTIPLE FERROELECTRIC MEMORY ELEMENT...
- Publication number 20220399054
- Publication date Dec 15, 2022
- SEAGATE TECHNOLOGY LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES, SYSTEMS, AND METHODS FOR FREQUENCY-DEPENDENT SIGNAL MO...
- Publication number 20220392518
- Publication date Dec 8, 2022
- Micron Technology, Inc.
- M. Ataul Karim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE BASED ON FERROELECTRIC CAPACITOR
- Publication number 20220392508
- Publication date Dec 8, 2022
- TSINGHUA UNIVERSITY
- Xueqing Li
- G11 - INFORMATION STORAGE
Information Patent Application
DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING
- Publication number 20220375518
- Publication date Nov 24, 2022
- Micron Technology, Inc.
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Memory Device and Method
- Publication number 20220367516
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND WRITE METHOD
- Publication number 20220366973
- Publication date Nov 17, 2022
- KIOXIA Corporation
- Noboru SHIBATA
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20220366956
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- H01 - BASIC ELECTRIC ELEMENTS

using capacitive charge storage elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three-dimensional memory device

Drive strength calibration for multi-level signaling

Multinary bit cells for memory devices and network applications and...

Memory device having variable impedance memory cells and time-to-tr...

Semiconductor device and method for manufacturing semiconductor device

Apparatuses, systems, and methods for frequency-dependent signal mo...

Memory device having variable impedance memory cells and time-to-tr...

Non-volatile memory cell with multiple ferroelectric memory element...

Ferroelectric recording medium and ferroelectric storage apparatus

Semiconductor device including sense amplifier and operation method...

Dynamic allocation of a capacitive component in a memory device

Circuit design and layout with high embedded memory density

System and method for bidirectionally based electrical information...

Semiconductor memory device, memory system, and write method

Memory array with multiplexed digit lines

Memory device having variable impedance memory cells and time-to-tr...

Semiconductor device having electrically floating body transistor,...

Ferroelectric field-effect transistor (FeFET) memory

Mode-dependent heating of a memory device

Multi-level storage in ferroelectric memory

Memory cells and arrays of memory cells

Memory device having variable impedance memory cells and time-to-tr...

Memory device based on ferroelectric capacitor

Multinary bit cells for memory devices and network applications and...

Time-based access of a memory cell

Electronic device and method for fabricating the same

Ferroelectric recording medium and ferroelectric storage apparatus

Drive strength calibration for multi-level signaling

Current separation for memory sensing

Method of generating a multi-level signal using a selective level c...

Patents Applicationslast 30 patents

DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING

THREE-DIMENSIONAL MEMORY DEVICES

FERROELECTRIC STORAGE APPARATUS AND MANUFACTURING METHOD OF CONDUCT...

DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE

Tri-state electrical information storage

MEMORY ARRAY WITH MULTIPLEXED DIGIT LINES

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

Memory Device Having Variable Impedance Memory Cells and Time-To-Tr...

Semiconductor Device Having Electrically Floating Body Transistor,...

FERROELECTRIC NANOPARTICLE CAPACITOR FOR NON-BINARY LOGICS AND METH...

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING

MULTINARY BIT CELLS FOR MEMORY DEVICES AND NETWORK APPLICATIONS AND...

FERROELECTRIC RECORDING MEDIUM AND FERROELECTRIC STORAGE APPARATUS

METHOD OF GENERATING A MULTI-LEVEL SIGNAL USING A SELECTIVE LEVEL C...

Memory Device Having Variable Impedance Memory Cells and Time-to-Tr...

SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND WRITE METHOD

SEMICONDUCTOR MEMORY DEVICE

Semiconductor Device Having Electrically Floating Body Transistor,...

RESISTANCE NETWORK HAVING FOUR CONTACTS PER MEMORY CELL

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

CONTENT ADDRESSABLE MEMORY DEVICE AND OPERATING METHOD THEREOF

Memory Device Having Variable Impedance Memory Cells and Time-To-Tr...

NON-VOLATILE MEMORY CELL WITH MULTIPLE FERROELECTRIC MEMORY ELEMENT...

APPARATUSES, SYSTEMS, AND METHODS FOR FREQUENCY-DEPENDENT SIGNAL MO...

MEMORY DEVICE BASED ON FERROELECTRIC CAPACITOR

DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING

Three-Dimensional Memory Device and Method

SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND WRITE METHOD

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY