using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]

Industry

CPC
G11C11/5614

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/5614using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory device and programming method thereof
- Patent number 12,205,639
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jeremy Guy
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state programming of memory cells
- Patent number 11,989,228
- Issue date May 21, 2024
- Micron Technology, Inc.
- Jeremy M. Hirst
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods for accessing resistive change elements operable as antifuses
- Patent number 11,972,830
- Issue date Apr 30, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Difference merging for map portions
- Patent number 11,914,642
- Issue date Feb 27, 2024
- GM CRUISE HOLDINGS LLC
- Rohan Agrawal
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device
- Patent number 11,659,719
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Kilho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal non-volatile memory cell for decoupled read and write...
- Patent number 11,568,927
- Issue date Jan 31, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,545,202
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,444,125
- Issue date Sep 13, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for accessing resistive change elements in resistive change...
- Patent number 11,393,508
- Issue date Jul 19, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Formation of structurally robust nanoscale Ag-based conductive stru...
- Patent number 11,387,409
- Issue date Jul 12, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching atomic transistor and method for operating same
- Patent number 11,258,009
- Issue date Feb 22, 2022
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,121,175
- Issue date Sep 14, 2021
- Samsung Electronics Co., Ltd.
- Kilho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching resistor and method of making such a device
- Patent number 11,004,506
- Issue date May 11, 2021
- UCL BUSINESS LTD
- Anthony Kenyon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching atomic transistor and method for operating same
- Patent number 10,923,656
- Issue date Feb 16, 2021
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory write and read assistance using negative differential resist...
- Patent number 10,832,752
- Issue date Nov 10, 2020
- The Regents of the University of California
- Puneet Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device
- Patent number 10,803,932
- Issue date Oct 13, 2020
- TOSHIBA MEMORY CORPORATION
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory sense amplifiers and memory verification methods
- Patent number 10,748,613
- Issue date Aug 18, 2020
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for matrix-vector multiplications
- Patent number 10,678,885
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Manuel Le Gallo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistance change memory device
- Patent number 10,490,271
- Issue date Nov 26, 2019
- TOSHIBA MEMORY CORPORATION
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Formation of structurally robust nanoscale Ag-based conductive stru...
- Patent number 10,483,462
- Issue date Nov 19, 2019
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming for electronic memories
- Patent number 10,366,752
- Issue date Jul 30, 2019
- Technion Research and Development Foundation Ltd.
- Misbah Ramadan
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance element and memory device
- Patent number 10,312,440
- Issue date Jun 4, 2019
- Toshiba Mitsubishi Corporation
- Hiromichi Kuriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device for matrix-vector multiplications
- Patent number 10,311,126
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Manuel Le Gallo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Devices and methods for accessing resistive change elements in resi...
- Patent number 10,290,327
- Issue date May 14, 2019
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory sense amplifiers and memory verification methods
- Patent number 10,147,487
- Issue date Dec 4, 2018
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance-change memory operating with read pulses of opposite pol...
- Patent number 9,928,908
- Issue date Mar 27, 2018
- TOSHIBA MEMORY CORPORATION
- Reika Ichihara
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristor access transistor controlled non-volatile memory programm...
- Patent number 9,805,770
- Issue date Oct 31, 2017
- Hewlett Packard Enterprise Development LP
- Emmanuelle J. Merced Grafals
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell verification circuits, memory cell sense circuits and m...
- Patent number 9,799,398
- Issue date Oct 24, 2017
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhanced MLC programming
- Patent number 9,786,369
- Issue date Oct 10, 2017
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MULTI-STATE PROGRAMMING OF MEMORY CELLS
- Publication number 20240312534
- Publication date Sep 19, 2024
- Micron Technology, Inc.
- Jeremy M. Hirst
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20240203472
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20230100181
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for Accessing Resistive Change Elements Operable as Antifuses
- Publication number 20220358970
- Publication date Nov 10, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20220351766
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE...
- Publication number 20220319588
- Publication date Oct 6, 2022
- International Business Machines Corporation
- John Rozen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES
- Publication number 20210399055
- Publication date Dec 23, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun LOY
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210351233
- Publication date Nov 11, 2021
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210104575
- Publication date Apr 8, 2021
- Samsung Electronics Co., Ltd.
- Kilho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME
- Publication number 20210104667
- Publication date Apr 8, 2021
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE
- Publication number 20200303001
- Publication date Sep 24, 2020
- Toshiba Memory Corporation
- Ryu OGIWARA
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE INTEGRATED CIRCUIT AND CONTROL DEVICE
- Publication number 20200251496
- Publication date Aug 6, 2020
- NEC Corporation
- Makoto MIYAMURA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
A Switching Resistor And Method Of Making Such A Device
- Publication number 20200043550
- Publication date Feb 6, 2020
- Anthony Kenyon
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for Accessing Resistive Change Elements in Resistive Change...
- Publication number 20190272855
- Publication date Sep 5, 2019
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WRITE AND READ ASSISTANCE USING NEGATIVE DIFFERENTIAL RESIST...
- Publication number 20190198079
- Publication date Jun 27, 2019
- The Regents of the University of California
- Puneet GUPTA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE FOR MATRIX-VECTOR MULTIPLICATIONS
- Publication number 20190188242
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Manuel Le Gallo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICES AND METHODS FOR ACCESSING RESISTIVE CHANGE ELEMENTS IN RESI...
- Publication number 20190115054
- Publication date Apr 18, 2019
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20190088318
- Publication date Mar 21, 2019
- Toshiba Memory Corporation
- Tetsu MOROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Sense Amplifiers and Memory Verification Methods
- Publication number 20190066783
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Sense Amplifiers and Memory Verification Methods
- Publication number 20180047446
- Publication date Feb 15, 2018
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20160225441
- Publication date Aug 4, 2016
- KABUSHIKI KAISHA TOSHIBA
- Haruki Toda
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile SRAM With Multiple Storage States
- Publication number 20160172024
- Publication date Jun 16, 2016
- EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Yanjun MA
- G11 - INFORMATION STORAGE
Information Patent Application
Method for Operating a Conductive Bridging Memory Device
- Publication number 20160155502
- Publication date Jun 2, 2016
- IMEC vzw
- Ludovic Goux
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20150213886
- Publication date Jul 30, 2015
- KABUSHIKI KAISHA TOSHIBA
- Haruki Toda
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY CELLS
- Publication number 20150003144
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Evangelos S Eleftheriou
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT AND MEMORY DEVICE
- Publication number 20140376301
- Publication date Dec 25, 2014
- Tetsuya Mizuguchi
- G11 - INFORMATION STORAGE
Information Patent Application
Management of Variable Resistance Data Storage Device
- Publication number 20140241033
- Publication date Aug 28, 2014
- SEAGATE TECHNOLOGY LLC
- Mark Allen Gaertner
- G11 - INFORMATION STORAGE
Information Patent Application
PERMUTATIONAL MEMORY CELLS
- Publication number 20140233293
- Publication date Aug 21, 2014
- Micron Technology, Inc.
- Scott E. Sills
- G11 - INFORMATION STORAGE
Information Patent Application
APPLYING A BIAS SIGNAL TO MEMORY CELLS TO REVERSE A RESISTANCE SHIF...
- Publication number 20140219001
- Publication date Aug 7, 2014
- SEAGATE TECHNOLOGY LLC
- Ara Patapoutian
- G11 - INFORMATION STORAGE
Information Patent Application
Temperature Based Logic Profile for Variable Resistance Memory Cells
- Publication number 20140219003
- Publication date Aug 7, 2014
- SEAGATE TECHNOLOGY LLC
- David Scott Ebsen
- G11 - INFORMATION STORAGE

using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device and programming method thereof

Multi-state programming of memory cells

Methods for accessing resistive change elements operable as antifuses

Circuit design and layout with high embedded memory density

Difference merging for map portions

Semiconductor device

Two-terminal non-volatile memory cell for decoupled read and write...

Circuit design and layout with high embedded memory density

Memory devices and methods of forming memory devices

Methods for accessing resistive change elements in resistive change...

Formation of structurally robust nanoscale Ag-based conductive stru...

Switching atomic transistor and method for operating same

Semiconductor device

Switching resistor and method of making such a device

Switching atomic transistor and method for operating same

Memory write and read assistance using negative differential resist...

Storage device

Memory sense amplifiers and memory verification methods

Memory device for matrix-vector multiplications

Resistance change memory device

Formation of structurally robust nanoscale Ag-based conductive stru...

Programming for electronic memories

Variable resistance element and memory device

Memory device for matrix-vector multiplications

Devices and methods for accessing resistive change elements in resi...

Memory sense amplifiers and memory verification methods

Resistance-change memory operating with read pulses of opposite pol...

Memristor access transistor controlled non-volatile memory programm...

Memory cell verification circuits, memory cell sense circuits and m...

Enhanced MLC programming

Patents Applicationslast 30 patents

MULTI-STATE PROGRAMMING OF MEMORY CELLS

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

Methods for Accessing Resistive Change Elements Operable as Antifuses

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE...

MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME

STORAGE DEVICE

PROGRAMMABLE INTEGRATED CIRCUIT AND CONTROL DEVICE

A Switching Resistor And Method Of Making Such A Device

Methods for Accessing Resistive Change Elements in Resistive Change...

MEMORY WRITE AND READ ASSISTANCE USING NEGATIVE DIFFERENTIAL RESIST...

MEMORY DEVICE FOR MATRIX-VECTOR MULTIPLICATIONS

DEVICES AND METHODS FOR ACCESSING RESISTIVE CHANGE ELEMENTS IN RESI...

MEMORY DEVICE

Memory Sense Amplifiers and Memory Verification Methods

Memory Sense Amplifiers and Memory Verification Methods

MEMORY SYSTEM

Non-Volatile SRAM With Multiple Storage States

Method for Operating a Conductive Bridging Memory Device

MEMORY SYSTEM

RESISTIVE RANDOM-ACCESS MEMORY CELLS

MEMORY ELEMENT AND MEMORY DEVICE

Management of Variable Resistance Data Storage Device

PERMUTATIONAL MEMORY CELLS

APPLYING A BIAS SIGNAL TO MEMORY CELLS TO REVERSE A RESISTANCE SHIF...

Temperature Based Logic Profile for Variable Resistance Memory Cells