TREA

using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]

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Industry

  • CPC
  • G11C11/5614
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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/5614using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
Industries