using diodes, e.g. as threshold elements

Industry

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G11C11/36

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/36using diodes, e.g. as threshold elements

Industries

Patents Grantslast 30 patents

Information Patent Grant
Dynamic random access memory (DRAM) cell, DRAM device and storage m...
- Patent number 10,957,375
- Issue date Mar 23, 2021
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Kei Kang Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Gated diode memory cells
- Patent number 10,797,053
- Issue date Oct 6, 2020
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent multi-state program verify for non-volatile memory
- Patent number 10,643,695
- Issue date May 5, 2020
- SanDisk Technologies LLC
- Hao Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of controlling the same
- Patent number 10,418,101
- Issue date Sep 17, 2019
- TOSHIBA MEMORY CORPORATION
- Takayuki Miyazaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for managing write voltages in a cross-point me...
- Patent number 9,646,671
- Issue date May 9, 2017
- Kilopass Technology, Inc.
- Frank Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with schottky diode
- Patent number 9,496,017
- Issue date Nov 15, 2016
- III Holdings 1, LLC
- Krishnakumar Mani
- G11 - INFORMATION STORAGE
Information Patent Grant
Semi-conductor device with programmable response
- Patent number 9,318,717
- Issue date Apr 19, 2016
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G11 - INFORMATION STORAGE
Information Patent Grant
Electro-mechanical diode non-volatile memory cell for cross-point m...
- Patent number 9,183,916
- Issue date Nov 10, 2015
- The Regents of the University of California
- Tsu-Jae King Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory diodes
- Patent number 9,172,034
- Issue date Oct 27, 2015
- Technion Research and Development Foundation
- Avner Rothschild
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar resistive-switching memory with a single diode per memory cell
- Patent number 9,013,913
- Issue date Apr 21, 2015
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with Schottky diode
- Patent number 8,879,314
- Issue date Nov 4, 2014
- III Holdings 1, LLC
- Krishnakumar Mani
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell operating by increasing order in polycrysta...
- Patent number 8,730,720
- Issue date May 20, 2014
- Sandisk 3D LLC
- Scott Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Grant
Gated diode memory cells
- Patent number 8,675,403
- Issue date Mar 18, 2014
- International Business Machines Corporation
- Wing K. Luk
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device including diode-storage node and cross-p...
- Patent number 8,586,978
- Issue date Nov 19, 2013
- Samsung Electronics Co., Ltd.
- Ki-hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Array operation using a schottky diode as a non-ohmic selection device
- Patent number 8,565,039
- Issue date Oct 22, 2013
- Unity Semiconductor Corporation
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device
- Patent number 8,559,211
- Issue date Oct 15, 2013
- Kabushiki Kaisha Toshiba
- Haruki Toda
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar resistive-switching memory with a single diode per memory cell
- Patent number 8,531,868
- Issue date Sep 10, 2013
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell operating by increasing order in polycrysta...
- Patent number 8,482,973
- Issue date Jul 9, 2013
- Sandisk 3D LLC
- S. Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor nanowire memory device
- Patent number 8,390,066
- Issue date Mar 5, 2013
- Kabushiki Kaisha Toshiba
- Hideyuki Nishizawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bipolar resistive-switching memory with a single diode per memory cell
- Patent number 8,369,131
- Issue date Feb 5, 2013
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Array operation using a schottky diode as a non ohmic selection device
- Patent number 8,254,196
- Issue date Aug 28, 2012
- Unity Semiconductor Corporation
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell operating by increasing order in polycrysta...
- Patent number 8,243,509
- Issue date Aug 14, 2012
- Sandisk 3D LLC
- S. Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge retention structures and techniques for implementing charge...
- Patent number 8,189,364
- Issue date May 29, 2012
- Qs Semiconductor Australia Pty Ltd.
- Sima Dimitrijev
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device
- Patent number 8,102,699
- Issue date Jan 24, 2012
- Kabushiki Kaisha Toshiba
- Haruki Toda
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device containing carbon or nitrogen doped diode
- Patent number 8,102,694
- Issue date Jan 24, 2012
- Sandisk 3D LLC
- S. Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Grant
Biploar resistive-switching memory with a single diode per memory cell
- Patent number 8,072,795
- Issue date Dec 6, 2011
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making nonvolatile memory device containing carbon or nit...
- Patent number 8,072,791
- Issue date Dec 6, 2011
- Sandisk 3D LLC
- S. Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Grant
Array operation using a schottky diode as a non-ohmic isolation device
- Patent number 8,027,215
- Issue date Sep 27, 2011
- Unity Semiconductor Corporation
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Grant
Pin diode device and architecture
- Patent number 7,916,529
- Issue date Mar 29, 2011
- Spansion LLC
- Wai Lo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming a non-volatile memory device
- Patent number 7,911,823
- Issue date Mar 22, 2011
- Kabushiki Kaisha Toshiba
- Takuya Futatsuyama
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
STATEFUL LOGIC-IN-MEMORY USING SILICON DIODES
- Publication number 20240347093
- Publication date Oct 17, 2024
- Korea University Research and Business Foundation
- Sang Sig KIM
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELL, DRAM DEVICE AND STORAGE M...
- Publication number 20200286540
- Publication date Sep 10, 2020
- Changxin Memory Technologies, Inc.
- Kei Kang HUNG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
- Publication number 20190295638
- Publication date Sep 26, 2019
- Toshiba Memory Corporation
- Takayuki MIYAZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH SCHOTTKY DIODE
- Publication number 20140301138
- Publication date Oct 9, 2014
- MagSil Corporation
- Krishnakumar Mani
- G11 - INFORMATION STORAGE
Information Patent Application
Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell
- Publication number 20140247649
- Publication date Sep 4, 2014
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICE
- Publication number 20140014893
- Publication date Jan 16, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Application
Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell
- Publication number 20130314974
- Publication date Nov 28, 2013
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTA...
- Publication number 20130286728
- Publication date Oct 31, 2013
- Scott Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Diodes
- Publication number 20130234098
- Publication date Sep 12, 2013
- Technion Research & Development Foundation Ltd.
- Avner Rothschild
- G11 - INFORMATION STORAGE
Information Patent Application
Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell
- Publication number 20130107607
- Publication date May 2, 2013
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
GATED DIODE MEMORY CELLS
- Publication number 20120300544
- Publication date Nov 29, 2012
- International Business Machines Corporation
- Wing K. Luk
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTA...
- Publication number 20120300533
- Publication date Nov 29, 2012
- S. Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Application
ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICE
- Publication number 20120286232
- Publication date Nov 15, 2012
- UNITY SEMICONDUCTOR CORPORATION
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE
- Publication number 20120099370
- Publication date Apr 26, 2012
- KABUSHIKI KAISHA TOSHIBA
- Haruki TODA
- G11 - INFORMATION STORAGE
Information Patent Application
Producing a perfect P-N junction
- Publication number 20120068269
- Publication date Mar 22, 2012
- Wen Lin
- G11 - INFORMATION STORAGE
Information Patent Application
BIPOLAR RESISTIVE-SWITCHING MEMORY WITH A SINGLE DIODE PER MEMORY CELL
- Publication number 20120044751
- Publication date Feb 23, 2012
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Array Operation Using A Schottky Diode As A Non Ohmic Selection Device
- Publication number 20120020143
- Publication date Jan 26, 2012
- UNITY SEMICONDUCTOR CORPORATION
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20110220876
- Publication date Sep 15, 2011
- Kabushiki Kaisha Toshiba
- Hideyuki Nishizawa
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTA...
- Publication number 20110176352
- Publication date Jul 21, 2011
- S. Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE
- Publication number 20110080778
- Publication date Apr 7, 2011
- KABUSHIKI KAISHA TOSHIBA
- Haruki TODA
- G11 - INFORMATION STORAGE
Information Patent Application
Gated Diode Memory Cells
- Publication number 20110026323
- Publication date Feb 3, 2011
- International Business Machines Corporation
- Wing K. Luk
- G11 - INFORMATION STORAGE
Information Patent Application
PIN DIODE DEVICE AND ARCHITECTURE
- Publication number 20100208517
- Publication date Aug 19, 2010
- SPANSION LLC
- Wai Lo
- G11 - INFORMATION STORAGE
Information Patent Application
Array Operation Using A Schottky Diode As a Non-Ohmic Isolation Device
- Publication number 20100157710
- Publication date Jun 24, 2010
- UNITY SEMICONDUCTOR CORPORATION
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE RETENTION STRUCTURES AND TECHNIQUES FOR IMPLEMENTING CHARGE...
- Publication number 20100149852
- Publication date Jun 17, 2010
- Qs Semiconductor Australia Pty Ltd.
- Sima Dimitrijev
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING DIODE MEMORY CELLS
- Publication number 20090154227
- Publication date Jun 18, 2009
- Qimonda North America Corp.
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory device including diode-storage node and cross-p...
- Publication number 20090116272
- Publication date May 7, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Ki-hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
Gated Diode Nonvolatile Memory Cell Array
- Publication number 20090080254
- Publication date Mar 26, 2009
- Macronix International Co., Ltd.
- Yi Ying Liao
- G11 - INFORMATION STORAGE
Information Patent Application
Enhanced Gated Diode Memory Cells
- Publication number 20090046503
- Publication date Feb 19, 2009
- Wing Kin Luk
- G11 - INFORMATION STORAGE
Information Patent Application
Method of making high forward current diodes for reverse write 3D cell
- Publication number 20080316796
- Publication date Dec 25, 2008
- SANDISK 3D LLC
- S. Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile memory device containing carbon or nitrogen doped diode
- Publication number 20080316808
- Publication date Dec 25, 2008
- SANDISK 3D LLC
- S. Brad Herner
- G11 - INFORMATION STORAGE

using diodes, e.g. as threshold elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Dynamic random access memory (DRAM) cell, DRAM device and storage m...

Gated diode memory cells

Concurrent multi-state program verify for non-volatile memory

Semiconductor memory device and method of controlling the same

Systems and methods for managing write voltages in a cross-point me...

Memory cell with schottky diode

Semi-conductor device with programmable response

Electro-mechanical diode non-volatile memory cell for cross-point m...

Memory diodes

Bipolar resistive-switching memory with a single diode per memory cell

Memory cell with Schottky diode

Nonvolatile memory cell operating by increasing order in polycrysta...

Gated diode memory cells

Non-volatile memory device including diode-storage node and cross-p...

Array operation using a schottky diode as a non-ohmic selection device

Phase change memory device

Bipolar resistive-switching memory with a single diode per memory cell

Nonvolatile memory cell operating by increasing order in polycrysta...

Semiconductor nanowire memory device

Bipolar resistive-switching memory with a single diode per memory cell

Array operation using a schottky diode as a non ohmic selection device

Nonvolatile memory cell operating by increasing order in polycrysta...

Charge retention structures and techniques for implementing charge...

Phase change memory device

Nonvolatile memory device containing carbon or nitrogen doped diode

Biploar resistive-switching memory with a single diode per memory cell

Method of making nonvolatile memory device containing carbon or nit...

Array operation using a schottky diode as a non-ohmic isolation device

Pin diode device and architecture

Method of programming a non-volatile memory device

Patents Applicationslast 30 patents

STATEFUL LOGIC-IN-MEMORY USING SILICON DIODES

DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELL, DRAM DEVICE AND STORAGE M...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME

MEMORY CELL WITH SCHOTTKY DIODE

Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell

ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICE

Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell

NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTA...

Memory Diodes

Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell

GATED DIODE MEMORY CELLS

NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTA...

ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICE

PHASE CHANGE MEMORY DEVICE

Producing a perfect P-N junction

BIPOLAR RESISTIVE-SWITCHING MEMORY WITH A SINGLE DIODE PER MEMORY CELL

Array Operation Using A Schottky Diode As A Non Ohmic Selection Device

SEMICONDUCTOR MEMORY DEVICE

NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTA...

PHASE CHANGE MEMORY DEVICE

Gated Diode Memory Cells

PIN DIODE DEVICE AND ARCHITECTURE

Array Operation Using A Schottky Diode As a Non-Ohmic Isolation Device

CHARGE RETENTION STRUCTURES AND TECHNIQUES FOR IMPLEMENTING CHARGE...

INTEGRATED CIRCUIT INCLUDING DIODE MEMORY CELLS

Non-volatile memory device including diode-storage node and cross-p...

Gated Diode Nonvolatile Memory Cell Array

Enhanced Gated Diode Memory Cells

Method of making high forward current diodes for reverse write 3D cell

Nonvolatile memory device containing carbon or nitrogen doped diode