using ferroelectric elements

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/22using ferroelectric elements

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Read control signal generation for memory
- Patent number 12,367,132
- Issue date Jul 22, 2025
- Micron Technology, Inc.
- Jaeil Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Error correction memory device with fast data access
- Patent number 12,360,848
- Issue date Jul 15, 2025
- Micron Technology, Inc.
- Scott E. Schaefer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multiply operation circuit, multiply and accumulate circuit, and me...
- Patent number 12,360,741
- Issue date Jul 15, 2025
- FERROELECTRIC MEMORY GMBH
- Corrado Villa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and electronic device
- Patent number 12,354,636
- Issue date Jul 8, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 12,356,630
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Chen Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of writing to or erasing multi-bit memory storage device
- Patent number 12,355,026
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Signal development caching in a memory device
- Patent number 12,353,762
- Issue date Jul 8, 2025
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Apparatus and method to improve sensing noise margin in a non-linea...
- Patent number 12,347,476
- Issue date Jul 1, 2025
- Kepler Computing Inc.
- Ahmad Tavakoli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory structures and methods of forming the same
- Patent number 12,349,364
- Issue date Jul 1, 2025
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kian Hui Goh
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuitry borrowing for memory arrays
- Patent number 12,340,832
- Issue date Jun 24, 2025
- Micron Technology, Inc.
- Andrea Martinelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile ferroelectric storage element and devices comprising them
- Patent number 12,342,547
- Issue date Jun 24, 2025
- Tokyo Institute of Technology
- Kuniyuki Kakushima
- G11 - INFORMATION STORAGE
Information Patent Grant
Array of memory cells, methods used in forming an array of memory c...
- Patent number 12,342,533
- Issue date Jun 24, 2025
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory operation bias and power domains
- Patent number 12,334,129
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional ferroelectric random access memory devices and me...
- Patent number 12,336,183
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- TsuChing Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-linear polar material based multi-capacitor high density bit-cell
- Patent number 12,334,127
- Issue date Jun 17, 2025
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-cycle reset mechanism for a chain of majority gates having no...
- Patent number 12,334,923
- Issue date Jun 17, 2025
- Kepler Computing Inc.
- Amrita Mathuriya
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory circuit and reading method thereof
- Patent number 12,334,128
- Issue date Jun 17, 2025
- FERROELECTRIC MEMORY GMBH
- Marko Noack
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell array with increased source bias voltage
- Patent number 12,336,180
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Jun Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Register, flop, and latch designs inlcuding ferroelectric and linea...
- Patent number 12,327,580
- Issue date Jun 10, 2025
- Advanced Micro Devices, Inc.
- Divya Madapusi Srinivas Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded memory IC's with power supply droop circuitry coupled to f...
- Patent number 12,327,581
- Issue date Jun 10, 2025
- Intel Corporation
- Wilfred Gomes
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing word addressable nonvolatile memory...
- Patent number 12,328,120
- Issue date Jun 10, 2025
- Gowin Semiconductor Corporation
- Jinghui Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric storage apparatus and manufacturing method of conduct...
- Patent number 12,322,427
- Issue date Jun 3, 2025
- RESONAC HARD DISK CORPORATION
- Masaaki Yanagisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded ferroelectric memory cell
- Patent number 12,322,429
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Planar capacitors with shared electrode and methods of fabrication
- Patent number 12,324,163
- Issue date Jun 3, 2025
- Kepler Computing Inc.
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory activation timing management
- Patent number 12,307,128
- Issue date May 20, 2025
- Micron Technology, Inc.
- Angelo Visconti
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ferroelectric thin film, electronic element using name, and method...
- Patent number 12,308,063
- Issue date May 20, 2025
- National Institute of Advanced Industrial Science and Technology
- Masato Uehara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random swap injection
- Patent number 12,308,064
- Issue date May 20, 2025
- Kepler Computing Inc.
- Christopher B. Wilkerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory device
- Patent number 12,302,636
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential storage in memory arrays
- Patent number 12,300,298
- Issue date May 13, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Grouping power supplies for a sleep mode
- Patent number 12,298,838
- Issue date May 13, 2025
- Micron Technology, Inc.
- Ki-Jun Nam
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS AND MECHANISM FOR PROCESSING NEURAL NETWORK TASKS USING A...
- Publication number 20250238668
- Publication date Jul 24, 2025
- Google LLC
- Uday Kumar Dasari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS FOR INDEPENDENT MEMORY BANK MAINTENANCE AND MEMORY DEVICES...
- Publication number 20250239292
- Publication date Jul 24, 2025
- Lodestar Licensing Group LLC
- George B. Raad
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME
- Publication number 20250239286
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng KAO
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE MANAGEMENT FOR IMPROVED tRP TIMING FOR FeRAM DEVICES
- Publication number 20250239287
- Publication date Jul 24, 2025
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20250241064
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh LU
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250234555
- Publication date Jul 17, 2025
- SK HYNIX INC.
- Hee Sung KONG
- G11 - INFORMATION STORAGE
Information Patent Application
STORING BITS WITH CELLS IN A MEMORY DEVICE
- Publication number 20250232819
- Publication date Jul 17, 2025
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH BANDWIDTH THREE-DIMENSIONAL SYSTEM-ON-CHIP
- Publication number 20250225095
- Publication date Jul 10, 2025
- Kepler Computing Inc.
- Amrita Mathuriya
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONVERTIBLE MEMORY DEVICE
- Publication number 20250226018
- Publication date Jul 10, 2025
- SK HYNIX INC.
- Gyeong Cheol PARK
- G11 - INFORMATION STORAGE
Information Patent Application
BITLINE SENSING AMPLIFIER AND MEMORY DEVICE INCLUDING THE SAME
- Publication number 20250210072
- Publication date Jun 26, 2025
- Samsung Electronics Co., Ltd.
- MIJI JANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC TUNNEL BARRIER LAYER
- Publication number 20250212492
- Publication date Jun 26, 2025
- SK HYNIX INC.
- Won Tae KOO
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric Memory Device
- Publication number 20250210070
- Publication date Jun 26, 2025
- IMEC vzw
- Amey Mahadev Walke
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY AND IN-MEMORY COMPUTING CIRCUIT
- Publication number 20250191654
- Publication date Jun 12, 2025
- Peking University
- Zongwei WANG
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC GATE STACK WITH TUNNEL DIELECTRIC INSERT FOR NAND APP...
- Publication number 20250194095
- Publication date Jun 12, 2025
- Samsung Electronics Co., Ltd.
- Kijoon KIM
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR MEMORY STRUCTURE
- Publication number 20250185251
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
READ OPERATIONS BASED ON A DYNAMIC REFERENCE
- Publication number 20250182805
- Publication date Jun 5, 2025
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICES AND METHODS OF OPERATING SAME
- Publication number 20250182806
- Publication date Jun 5, 2025
- Samsung Electronics Co., Ltd.
- Juhyung Kim
- G11 - INFORMATION STORAGE
Information Patent Application
CONTENT ADDRESSABLE MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20250182825
- Publication date Jun 5, 2025
- Seoul National University R&DB Foundation
- Woo Young CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20250174259
- Publication date May 29, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Hiromichi GODO
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE
- Publication number 20250173093
- Publication date May 29, 2025
- Micron Technology, Inc.
- Dmitri Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURES FOR WORD LINE MULTIPLEXING IN THREE-DIMENSIONAL MEMORY A...
- Publication number 20250174264
- Publication date May 29, 2025
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- G11 - INFORMATION STORAGE
Information Patent Application
PILLAR CAPACITOR STRUCTURE FOR HIGH DENSITY MEMORY APPLICATIONS
- Publication number 20250169078
- Publication date May 22, 2025
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL-PRECISION ANALOG MEMORY CELL AND ARRAY
- Publication number 20250166686
- Publication date May 22, 2025
- Hefei Reliance Memory Limited
- Zhichao LU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DRIVING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250157519
- Publication date May 15, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING FERROELECTRIC CELL CAPACITOR AND OPERATING...
- Publication number 20250157518
- Publication date May 15, 2025
- Samsung Electronics Co., Ltd.
- Hwayeong Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SECURITY MANAGEMENT OF FERROELECTRIC MEMORY DEVICE
- Publication number 20250148133
- Publication date May 8, 2025
- Micron Technology, Inc.
- Danilo Caraccio
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS
- Publication number 20250142840
- Publication date May 1, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays Comprising Vertically-Alternating Tiers of Insulative...
- Publication number 20250140298
- Publication date May 1, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE COUNTER-PULSE FOR READING STATE-PROGRAMMABLE MEMORY CELLS
- Publication number 20250131954
- Publication date Apr 24, 2025
- Ferroelectric Memory GmbH
- Stefano SIVERO
- G11 - INFORMATION STORAGE
Information Patent Application
STORING MEMORY ARRAY OPERATIONAL INFORMATION IN NON-VOLATILE SUBARRAYS
- Publication number 20250130908
- Publication date Apr 24, 2025
- Micron Technology, Inc.
- Christopher John Kawamura
- G06 - COMPUTING CALCULATING COUNTING

using ferroelectric elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Read control signal generation for memory

Error correction memory device with fast data access

Multiply operation circuit, multiply and accumulate circuit, and me...

Semiconductor device and electronic device

Semiconductor device and method of forming the same

Method of writing to or erasing multi-bit memory storage device

Signal development caching in a memory device

Apparatus and method to improve sensing noise margin in a non-linea...

Memory structures and methods of forming the same

Circuitry borrowing for memory arrays

Non-volatile ferroelectric storage element and devices comprising them

Array of memory cells, methods used in forming an array of memory c...

Ferroelectric memory operation bias and power domains

Three-dimensional ferroelectric random access memory devices and me...

Non-linear polar material based multi-capacitor high density bit-cell

Multi-cycle reset mechanism for a chain of majority gates having no...

Ferroelectric memory circuit and reading method thereof

Memory cell array with increased source bias voltage

Register, flop, and latch designs inlcuding ferroelectric and linea...

Embedded memory IC's with power supply droop circuitry coupled to f...

Method and system for providing word addressable nonvolatile memory...

Ferroelectric storage apparatus and manufacturing method of conduct...

Embedded ferroelectric memory cell

Planar capacitors with shared electrode and methods of fabrication

Memory activation timing management

Ferroelectric thin film, electronic element using name, and method...

Random swap injection

Three-dimensional memory device

Differential storage in memory arrays

Grouping power supplies for a sleep mode

Patents Applicationslast 30 patents

APPARATUS AND MECHANISM FOR PROCESSING NEURAL NETWORK TASKS USING A...

METHODS FOR INDEPENDENT MEMORY BANK MAINTENANCE AND MEMORY DEVICES...

MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

VOLTAGE MANAGEMENT FOR IMPROVED tRP TIMING FOR FeRAM DEVICES

THREE-DIMENSIONAL MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

STORING BITS WITH CELLS IN A MEMORY DEVICE

HIGH BANDWIDTH THREE-DIMENSIONAL SYSTEM-ON-CHIP

CONVERTIBLE MEMORY DEVICE

BITLINE SENSING AMPLIFIER AND MEMORY DEVICE INCLUDING THE SAME

SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC TUNNEL BARRIER LAYER

Ferroelectric Memory Device

MEMORY ARRAY AND IN-MEMORY COMPUTING CIRCUIT

FERROELECTRIC GATE STACK WITH TUNNEL DIELECTRIC INSERT FOR NAND APP...

METHOD FOR FORMING SEMICONDUCTOR MEMORY STRUCTURE

READ OPERATIONS BASED ON A DYNAMIC REFERENCE

NON-VOLATILE MEMORY DEVICES AND METHODS OF OPERATING SAME

CONTENT ADDRESSABLE MEMORY DEVICE AND OPERATING METHOD THEREOF

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

WRITE BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE

STRUCTURES FOR WORD LINE MULTIPLEXING IN THREE-DIMENSIONAL MEMORY A...

PILLAR CAPACITOR STRUCTURE FOR HIGH DENSITY MEMORY APPLICATIONS

DUAL-PRECISION ANALOG MEMORY CELL AND ARRAY

DRIVING METHOD OF SEMICONDUCTOR DEVICE

MEMORY DEVICE INCLUDING FERROELECTRIC CELL CAPACITOR AND OPERATING...

SECURITY MANAGEMENT OF FERROELECTRIC MEMORY DEVICE

SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS

Memory Arrays Comprising Vertically-Alternating Tiers of Insulative...

SENSE COUNTER-PULSE FOR READING STATE-PROGRAMMABLE MEMORY CELLS

STORING MEMORY ARRAY OPERATIONAL INFORMATION IN NON-VOLATILE SUBARRAYS