using ferroelectric storage elements

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G11C11/5657

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/5657using ferroelectric storage elements

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric storage apparatus and manufacturing method of conduct...
- Patent number 12,322,427
- Issue date Jun 3, 2025
- RESONAC HARD DISK CORPORATION
- Masaaki Yanagisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiferroic memory with piezoelectric layers and related methods
- Patent number 12,274,073
- Issue date Apr 8, 2025
- Eagle Technology, LLC
- Matt Bauer
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable memory device and operating method thereof
- Patent number 12,243,574
- Issue date Mar 4, 2025
- Seoul National University R&DB Foundation
- Woo Young Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device
- Patent number 12,200,940
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Drive strength calibration for multi-level signaling
- Patent number 12,148,502
- Issue date Nov 19, 2024
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with multiple ferroelectric memory element...
- Patent number 11,996,144
- Issue date May 28, 2024
- Seagate Technology LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric recording medium and ferroelectric storage apparatus
- Patent number 11,990,166
- Issue date May 21, 2024
- Resonac Corporation
- Masaaki Yanagisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic allocation of a capacitive component in a memory device
- Patent number 11,984,187
- Issue date May 14, 2024
- Micron Technology, Inc.
- Fuad Badrieh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric field-effect transistor (FeFET) memory
- Patent number 11,881,242
- Issue date Jan 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level storage in ferroelectric memory
- Patent number 11,848,042
- Issue date Dec 19, 2023
- Micron Technology, Inc.
- Christopher John Kawamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells and arrays of memory cells
- Patent number 11,810,607
- Issue date Nov 7, 2023
- Micron Technology, Inc.
- Yasushi Matsubara
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device based on ferroelectric capacitor
- Patent number 11,769,541
- Issue date Sep 26, 2023
- Tsinghua University
- Xueqing Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Time-based access of a memory cell
- Patent number 11,735,244
- Issue date Aug 22, 2023
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,723,214
- Issue date Aug 8, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric recording medium and ferroelectric storage apparatus
- Patent number 11,705,157
- Issue date Jul 18, 2023
- Resonac Corporation
- Masaaki Yanagisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Drive strength calibration for multi-level signaling
- Patent number 11,688,435
- Issue date Jun 27, 2023
- Micron Technology, Inc.
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Grant
Current separation for memory sensing
- Patent number 11,670,353
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,545,202
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a three-dimensional memory
- Patent number 11,532,640
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile multi-level cell memory using a ferroelectric superlat...
- Patent number 11,532,355
- Issue date Dec 20, 2022
- The Regents of the University of California
- Kai Ni
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric material-based three-dimensional flash memory, and ma...
- Patent number 11,515,333
- Issue date Nov 29, 2022
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Yun Heub Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field-effect transistor (FeFET) memory
- Patent number 11,450,370
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level ferroelectric field-effect transistor devices
- Patent number 11,430,510
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Detecting location within a network
- Patent number 11,423,968
- Issue date Aug 23, 2022
- Ivani, LLC
- John Wootton
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques and devices for canceling memory cell variations
- Patent number 11,380,381
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Yasuko Hattori
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge sharing between memory cell plates
- Patent number 11,361,806
- Issue date Jun 14, 2022
- Micron Technology, Inc.
- Eric S. Carman
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including mixed non-volatile memory cell types
- Patent number 11,347,401
- Issue date May 31, 2022
- Micron Technology, Inc.
- Toru Tanzawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device and erase verify operation
- Patent number 11,322,212
- Issue date May 3, 2022
- Kioxia Corporation
- Takashi Maeda
- G11 - INFORMATION STORAGE
Information Patent Grant
Time-based access of a memory cell
- Patent number 11,264,074
- Issue date Mar 1, 2022
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC MEMORY AND DATA READING METHOD AND DATA WRITING METHO...
- Publication number 20250095727
- Publication date Mar 20, 2025
- CXMT CORPORATION
- Xiang LIU
- G11 - INFORMATION STORAGE
Information Patent Application
DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING
- Publication number 20250046347
- Publication date Feb 6, 2025
- Lodestar Licensing Group LLC
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240381656
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC STORAGE APPARATUS AND MANUFACTURING METHOD OF CONDUCT...
- Publication number 20240282338
- Publication date Aug 22, 2024
- Resonac Corporation
- Masaaki YANAGISAWA
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE
- Publication number 20240257841
- Publication date Aug 1, 2024
- Micron Technology, Inc.
- Fuad Badrieh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20240203472
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC NANOPARTICLE CAPACITOR FOR NON-BINARY LOGICS AND METH...
- Publication number 20240121967
- Publication date Apr 11, 2024
- Terra Quantum AG
- Anna Razumnaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20240071453
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING
- Publication number 20230386527
- Publication date Nov 30, 2023
- Micron Technology, Inc.
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC RECORDING MEDIUM AND FERROELECTRIC STORAGE APPARATUS
- Publication number 20230282235
- Publication date Sep 7, 2023
- Resonac Corporation
- Masaaki YANAGISAWA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230140318
- Publication date May 4, 2023
- Samsung Electronics Co., Ltd.
- Hyuncheol KIM
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE NETWORK HAVING FOUR CONTACTS PER MEMORY CELL
- Publication number 20230108879
- Publication date Apr 6, 2023
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Maximilian LEDERER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20230100181
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
CONTENT ADDRESSABLE MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20230063076
- Publication date Mar 2, 2023
- Seoul National University R&DB Foundation
- Woo Young CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL WITH MULTIPLE FERROELECTRIC MEMORY ELEMENT...
- Publication number 20220399054
- Publication date Dec 15, 2022
- SEAGATE TECHNOLOGY LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE BASED ON FERROELECTRIC CAPACITOR
- Publication number 20220392508
- Publication date Dec 8, 2022
- TSINGHUA UNIVERSITY
- Xueqing Li
- G11 - INFORMATION STORAGE
Information Patent Application
DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING
- Publication number 20220375518
- Publication date Nov 24, 2022
- Micron Technology, Inc.
- Peter Mayer
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Memory Device and Method
- Publication number 20220367516
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20220366956
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20220351766
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
TIME-BASED ACCESS OF A MEMORY CELL
- Publication number 20220199139
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL FERROELECTRIC FIELD-EFFECT TRANSISTOR DEVICES
- Publication number 20220189546
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR 1.5 BITS PER CELL CHARGE DISTRIBUTION
- Publication number 20220172764
- Publication date Jun 2, 2022
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MATERIAL-BASED THREE-DIMENSIONAL FLASH MEMORY, AND MA...
- Publication number 20220130863
- Publication date Apr 28, 2022
- IUCF-HYU (Industry University Cooperation Foundation Hanyang University
- Yun Heub SONG
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE
- Publication number 20220130431
- Publication date Apr 28, 2022
- Micron Technology, Inc.
- Fuad Badrieh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20210398580
- Publication date Dec 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
TIME-BASED ACCESS OF A MEMORY CELL
- Publication number 20210383855
- Publication date Dec 9, 2021
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL STORAGE IN FERROELECTRIC MEMORY
- Publication number 20210335409
- Publication date Oct 28, 2021
- Micron Technology, Inc.
- Christopher John Kawamura
- G11 - INFORMATION STORAGE
Information Patent Application
DETECTING LOCATION WITHIN A NETWORK
- Publication number 20210249063
- Publication date Aug 12, 2021
- Ivani, LLC
- John Wootton
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING MIXED NON-VOLATILE MEMORY CELL TYPES
- Publication number 20210216217
- Publication date Jul 15, 2021
- Micron Technology, Inc.
- Toru Tanzawa
- G06 - COMPUTING CALCULATING COUNTING

using ferroelectric storage elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ferroelectric storage apparatus and manufacturing method of conduct...

Multiferroic memory with piezoelectric layers and related methods

Content addressable memory device and operating method thereof

Three-dimensional memory device

Drive strength calibration for multi-level signaling

Non-volatile memory cell with multiple ferroelectric memory element...

Ferroelectric recording medium and ferroelectric storage apparatus

Dynamic allocation of a capacitive component in a memory device

Circuit design and layout with high embedded memory density

Ferroelectric field-effect transistor (FeFET) memory

Multi-level storage in ferroelectric memory

Memory cells and arrays of memory cells

Memory device based on ferroelectric capacitor

Time-based access of a memory cell

Electronic device and method for fabricating the same

Ferroelectric recording medium and ferroelectric storage apparatus

Drive strength calibration for multi-level signaling

Current separation for memory sensing

Circuit design and layout with high embedded memory density

Method for manufacturing a three-dimensional memory

Non-volatile multi-level cell memory using a ferroelectric superlat...

Ferroelectric material-based three-dimensional flash memory, and ma...

Ferroelectric field-effect transistor (FeFET) memory

Multi-level ferroelectric field-effect transistor devices

Detecting location within a network

Techniques and devices for canceling memory cell variations

Charge sharing between memory cell plates

Memory device including mixed non-volatile memory cell types

Semiconductor memory device and erase verify operation

Time-based access of a memory cell

Patents Applicationslast 30 patents

FERROELECTRIC MEMORY AND DATA READING METHOD AND DATA WRITING METHO...

DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING

THREE-DIMENSIONAL MEMORY DEVICES

FERROELECTRIC STORAGE APPARATUS AND MANUFACTURING METHOD OF CONDUCT...

DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

FERROELECTRIC NANOPARTICLE CAPACITOR FOR NON-BINARY LOGICS AND METH...

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING

FERROELECTRIC RECORDING MEDIUM AND FERROELECTRIC STORAGE APPARATUS

SEMICONDUCTOR MEMORY DEVICE

RESISTANCE NETWORK HAVING FOUR CONTACTS PER MEMORY CELL

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

CONTENT ADDRESSABLE MEMORY DEVICE AND OPERATING METHOD THEREOF

NON-VOLATILE MEMORY CELL WITH MULTIPLE FERROELECTRIC MEMORY ELEMENT...

MEMORY DEVICE BASED ON FERROELECTRIC CAPACITOR

DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING

Three-Dimensional Memory Device and Method

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

TIME-BASED ACCESS OF A MEMORY CELL

MULTI-LEVEL FERROELECTRIC FIELD-EFFECT TRANSISTOR DEVICES

SYSTEMS AND METHODS FOR 1.5 BITS PER CELL CHARGE DISTRIBUTION

FERROELECTRIC MATERIAL-BASED THREE-DIMENSIONAL FLASH MEMORY, AND MA...

DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

TIME-BASED ACCESS OF A MEMORY CELL

MULTI-LEVEL STORAGE IN FERROELECTRIC MEMORY

DETECTING LOCATION WITHIN A NETWORK

MEMORY DEVICE INCLUDING MIXED NON-VOLATILE MEMORY CELL TYPES